JP5184724B2 - イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法 - Google Patents

イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法 Download PDF

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Publication number
JP5184724B2
JP5184724B2 JP2000553992A JP2000553992A JP5184724B2 JP 5184724 B2 JP5184724 B2 JP 5184724B2 JP 2000553992 A JP2000553992 A JP 2000553992A JP 2000553992 A JP2000553992 A JP 2000553992A JP 5184724 B2 JP5184724 B2 JP 5184724B2
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silicon carbide
implanting
pair
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JP2002518828A (ja
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スヴォロフ，アレクサンダー・ヴイ
パーマー，ジョン・ダブリュー
シング，ランビル
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000553992A 1998-06-08 1999-06-07 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法 Expired - Lifetime JP5184724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/093,207 1998-06-08
US09/093,207 US6107142A (en) 1998-06-08 1998-06-08 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
PCT/US1999/012714 WO1999065073A1 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions

Related Child Applications (1)

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JP2011006255A Division JP5295274B2 (ja) 1998-06-08 2011-01-14 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法

Publications (2)

Publication Number Publication Date
JP2002518828A JP2002518828A (ja) 2002-06-25
JP5184724B2 true JP5184724B2 (ja) 2013-04-17

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JP2000553992A Expired - Lifetime JP5184724B2 (ja) 1998-06-08 1999-06-07 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法
JP2011006255A Expired - Lifetime JP5295274B2 (ja) 1998-06-08 2011-01-14 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法

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US (1) US6107142A (enExample)
EP (2) EP1086491A1 (enExample)
JP (2) JP5184724B2 (enExample)
KR (1) KR100596061B1 (enExample)
CN (1) CN1155066C (enExample)
AU (1) AU4550399A (enExample)
CA (1) CA2333579C (enExample)
WO (1) WO1999065073A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651280B2 (en) 2018-03-02 2020-05-12 Kabushiki Kaisha Toshiba Silicon carbide semiconductor device

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US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
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JP4442698B2 (ja) * 2007-07-25 2010-03-31 三菱電機株式会社 炭化珪素半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
EP1701377A2 (en) 2006-09-13
KR100596061B1 (ko) 2006-07-03
CA2333579A1 (en) 1999-12-16
KR20010052492A (ko) 2001-06-25
JP2011097093A (ja) 2011-05-12
CA2333579C (en) 2009-09-08
JP5295274B2 (ja) 2013-09-18
JP2002518828A (ja) 2002-06-25
US6107142A (en) 2000-08-22
EP1086491A1 (en) 2001-03-28
WO1999065073A1 (en) 1999-12-16
EP1701377A3 (en) 2008-08-06
AU4550399A (en) 1999-12-30
CN1155066C (zh) 2004-06-23
CN1304551A (zh) 2001-07-18

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