JP2011097053A - インダクタンスを低減した電力モジュール組立体 - Google Patents

インダクタンスを低減した電力モジュール組立体 Download PDF

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Publication number
JP2011097053A
JP2011097053A JP2010236945A JP2010236945A JP2011097053A JP 2011097053 A JP2011097053 A JP 2011097053A JP 2010236945 A JP2010236945 A JP 2010236945A JP 2010236945 A JP2010236945 A JP 2010236945A JP 2011097053 A JP2011097053 A JP 2011097053A
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Japan
Prior art keywords
positive
power semiconductor
output
lead
electrically coupled
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Pending
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JP2010236945A
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Japanese (ja)
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JP2011097053A5 (https=
Inventor
Richard Alfred Beaupre
リチャード・アルフレッド・ビュープレ
Eladio C Delgado
エラディオ・クレメンテ・デルガド
Ljubisa Dragoljub Stevanovic
リュビサ・ドラゴリュブ・ステヴァノヴィック
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General Electric Co
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General Electric Co
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Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2011097053A publication Critical patent/JP2011097053A/ja
Publication of JP2011097053A5 publication Critical patent/JP2011097053A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Inverter Devices (AREA)
  • Rectifiers (AREA)
JP2010236945A 2009-10-30 2010-10-22 インダクタンスを低減した電力モジュール組立体 Pending JP2011097053A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/609,400 US8076696B2 (en) 2009-10-30 2009-10-30 Power module assembly with reduced inductance

Publications (2)

Publication Number Publication Date
JP2011097053A true JP2011097053A (ja) 2011-05-12
JP2011097053A5 JP2011097053A5 (https=) 2012-11-15

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JP2010236945A Pending JP2011097053A (ja) 2009-10-30 2010-10-22 インダクタンスを低減した電力モジュール組立体

Country Status (6)

Country Link
US (1) US8076696B2 (https=)
EP (1) EP2317551B1 (https=)
JP (1) JP2011097053A (https=)
CN (1) CN102110680B (https=)
BR (1) BRPI1004830B1 (https=)
CA (1) CA2719179C (https=)

Cited By (14)

* Cited by examiner, † Cited by third party
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JP2015026724A (ja) * 2013-07-26 2015-02-05 住友電気工業株式会社 半導体モジュール
WO2015121900A1 (ja) * 2014-02-11 2015-08-20 三菱電機株式会社 電力用半導体モジュール
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
JP2017037892A (ja) * 2015-08-07 2017-02-16 富士電機株式会社 半導体装置
CN109417051A (zh) * 2016-04-12 2019-03-01 通用电气公司 具有鲁棒性的低电感功率模块封装
JP2019220719A (ja) * 2019-09-24 2019-12-26 ローム株式会社 半導体装置
JP2020501353A (ja) * 2016-11-25 2020-01-16 アーベーベー・シュバイツ・アーゲー パワー半導体モジュール
US10892218B2 (en) 2015-02-26 2021-01-12 Rohm Co., Ltd. Semiconductor device
JP2021132234A (ja) * 2017-01-13 2021-09-09 クリー ファイエットヴィル インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP2022526411A (ja) * 2019-04-05 2022-05-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP2022091899A (ja) * 2019-09-24 2022-06-21 ローム株式会社 半導体装置
JPWO2022176675A1 (https=) * 2021-02-16 2022-08-25
JPWO2022209381A1 (https=) * 2021-04-01 2022-10-06
US11848622B2 (en) 2020-10-08 2023-12-19 Kabushiki Kaisha Toshiba Electronic device and power converter

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KR102034717B1 (ko) 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
DE102013104522B3 (de) * 2013-05-03 2014-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Subeinheiten und Anordnung hiermit
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
DE102014110617B4 (de) * 2014-07-28 2023-05-04 Infineon Technologies Ag Leistungshalbleitermodulsystem mit hoher Isolationsfestigkeit und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung mit einer hohen Isolationsfestigkeit
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JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
CN107112898B (zh) 2014-11-18 2019-06-21 通用电气全球采购有限责任公司 母线和功率电子装置及制造引线端连接器的方法
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US9985550B2 (en) 2014-12-23 2018-05-29 General Electric Company Systems and methods for reducing loop inductance
JP6603676B2 (ja) * 2015-02-13 2019-11-06 株式会社日産アーク ハーフブリッジパワー半導体モジュール及びその製造方法
CN106340513B (zh) * 2015-07-09 2019-03-15 台达电子工业股份有限公司 一种集成控制电路的功率模块
CN105957860B (zh) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 一种设有绝缘隔板的功率模块
CN105789192B (zh) * 2016-05-03 2018-11-30 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN105810653B (zh) * 2016-05-03 2018-09-28 扬州国扬电子有限公司 一种设有可共用电极大臂的功率模块
US10347608B2 (en) 2016-05-27 2019-07-09 General Electric Company Power module
CN107546214B (zh) * 2016-06-23 2020-02-07 台达电子工业股份有限公司 功率模块封装结构
DE102016216207A1 (de) 2016-08-29 2018-03-01 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Sensors
US10021802B2 (en) 2016-09-19 2018-07-10 General Electric Company Electronic module assembly having low loop inductance
DE102016218207A1 (de) * 2016-09-22 2018-03-22 Robert Bosch Gmbh Elektronische Baugruppe, insbesondere eine elektronische Leistungsbaugruppe für Hybridfahrzeuge oder Elektrofahrzeuge
IT201700033230A1 (it) * 2017-03-27 2018-09-27 S M E S P A Modulo di potenza per un convertitore di grandezze elettriche
WO2018207406A1 (ja) * 2017-05-12 2018-11-15 三菱電機株式会社 半導体モジュールおよび電力変換装置
JP7119399B2 (ja) * 2018-02-06 2022-08-17 株式会社デンソー 半導体装置
CN109860160B (zh) * 2018-12-25 2020-10-09 扬州国扬电子有限公司 一种结构紧凑且寄生电感低的功率模块
CN111162051B (zh) * 2019-12-23 2021-08-03 湖南国芯半导体科技有限公司 功率端子、功率模块封装结构及封装方法
EP3945572A1 (de) * 2020-07-30 2022-02-02 Siemens Aktiengesellschaft Leistungshalbleitermodul und herstellungsverfahren für ein leistungshalbleitermodul
EP4495989A1 (de) * 2023-07-21 2025-01-22 Siemens Aktiengesellschaft Halbleiteranordnung mit einem halbleiterelement

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Cited By (21)

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Publication number Priority date Publication date Assignee Title
JP2015026724A (ja) * 2013-07-26 2015-02-05 住友電気工業株式会社 半導体モジュール
WO2015121900A1 (ja) * 2014-02-11 2015-08-20 三菱電機株式会社 電力用半導体モジュール
JPWO2015121900A1 (ja) * 2014-02-11 2017-03-30 三菱電機株式会社 電力用半導体モジュール
US9941255B2 (en) 2014-02-11 2018-04-10 Mitsubishi Electric Corporation Power semiconductor module
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US10892218B2 (en) 2015-02-26 2021-01-12 Rohm Co., Ltd. Semiconductor device
JP2017037892A (ja) * 2015-08-07 2017-02-16 富士電機株式会社 半導体装置
CN109417051A (zh) * 2016-04-12 2019-03-01 通用电气公司 具有鲁棒性的低电感功率模块封装
JP7210446B2 (ja) 2016-11-25 2023-01-23 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト パワー半導体モジュール
JP2020501353A (ja) * 2016-11-25 2020-01-16 アーベーベー・シュバイツ・アーゲー パワー半導体モジュール
JP2021132234A (ja) * 2017-01-13 2021-09-09 クリー ファイエットヴィル インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP7297815B2 (ja) 2017-01-13 2023-06-26 ウルフスピード インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP2022526411A (ja) * 2019-04-05 2022-05-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP7240526B2 (ja) 2019-04-05 2023-03-15 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP7050732B2 (ja) 2019-09-24 2022-04-08 ローム株式会社 半導体装置
JP2022091899A (ja) * 2019-09-24 2022-06-21 ローム株式会社 半導体装置
JP2019220719A (ja) * 2019-09-24 2019-12-26 ローム株式会社 半導体装置
JP7240541B2 (ja) 2019-09-24 2023-03-15 ローム株式会社 半導体装置
US11848622B2 (en) 2020-10-08 2023-12-19 Kabushiki Kaisha Toshiba Electronic device and power converter
JPWO2022176675A1 (https=) * 2021-02-16 2022-08-25
JPWO2022209381A1 (https=) * 2021-04-01 2022-10-06

Also Published As

Publication number Publication date
CN102110680B (zh) 2019-08-06
CA2719179C (en) 2013-08-13
EP2317551A1 (en) 2011-05-04
CN102110680A (zh) 2011-06-29
EP2317551B1 (en) 2020-04-29
BRPI1004830B1 (pt) 2020-02-27
US8076696B2 (en) 2011-12-13
CA2719179A1 (en) 2011-04-30
BRPI1004830A2 (pt) 2013-02-19
US20110101515A1 (en) 2011-05-05

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