CN102110680B - 具有降低电感的功率模块组件 - Google Patents
具有降低电感的功率模块组件 Download PDFInfo
- Publication number
- CN102110680B CN102110680B CN201010538460.1A CN201010538460A CN102110680B CN 102110680 B CN102110680 B CN 102110680B CN 201010538460 A CN201010538460 A CN 201010538460A CN 102110680 B CN102110680 B CN 102110680B
- Authority
- CN
- China
- Prior art keywords
- terminal
- electrically
- power semiconductor
- power
- backing plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
Landscapes
- Inverter Devices (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/609,400 US8076696B2 (en) | 2009-10-30 | 2009-10-30 | Power module assembly with reduced inductance |
| US12/609400 | 2009-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102110680A CN102110680A (zh) | 2011-06-29 |
| CN102110680B true CN102110680B (zh) | 2019-08-06 |
Family
ID=43533445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010538460.1A Active CN102110680B (zh) | 2009-10-30 | 2010-10-29 | 具有降低电感的功率模块组件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8076696B2 (https=) |
| EP (1) | EP2317551B1 (https=) |
| JP (1) | JP2011097053A (https=) |
| CN (1) | CN102110680B (https=) |
| BR (1) | BRPI1004830B1 (https=) |
| CA (1) | CA2719179C (https=) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8803001B2 (en) | 2011-06-21 | 2014-08-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Bonding area design for transient liquid phase bonding process |
| US8675379B2 (en) | 2011-08-08 | 2014-03-18 | General Electric Company | Power converting apparatus having improved electro-thermal characteristics |
| US8487416B2 (en) | 2011-09-28 | 2013-07-16 | General Electric Company | Coaxial power module |
| US10058951B2 (en) | 2012-04-17 | 2018-08-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Alloy formation control of transient liquid phase bonding |
| US9044822B2 (en) | 2012-04-17 | 2015-06-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Transient liquid phase bonding process for double sided power modules |
| US8847384B2 (en) | 2012-10-15 | 2014-09-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power modules and power module arrays having a modular design |
| KR101890752B1 (ko) * | 2012-11-01 | 2018-08-22 | 삼성전자 주식회사 | 균일한 병렬 스위치 특성을 갖는 파워모듈용 기판 및 이를 포함하는 파워모듈 |
| US9391055B2 (en) | 2012-12-05 | 2016-07-12 | Lockheed Martin Corporation | Power module having stacked substrates arranged to provide tightly-coupled source and return current paths |
| KR102034717B1 (ko) | 2013-02-07 | 2019-10-21 | 삼성전자주식회사 | 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈 |
| DE102013104522B3 (de) * | 2013-05-03 | 2014-06-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Subeinheiten und Anordnung hiermit |
| JP6255771B2 (ja) * | 2013-07-26 | 2018-01-10 | 住友電気工業株式会社 | 半導体モジュール |
| CN106030796B (zh) * | 2014-02-11 | 2018-07-06 | 三菱电机株式会社 | 功率用半导体模块 |
| JP6331543B2 (ja) * | 2014-03-24 | 2018-05-30 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
| WO2015176985A1 (en) * | 2014-05-20 | 2015-11-26 | Abb Technology Ag | Semiconductor power module with low stray inductance |
| DE102014110617B4 (de) * | 2014-07-28 | 2023-05-04 | Infineon Technologies Ag | Leistungshalbleitermodulsystem mit hoher Isolationsfestigkeit und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung mit einer hohen Isolationsfestigkeit |
| DE102014111421A1 (de) * | 2014-08-11 | 2016-02-11 | Woodward Kempen Gmbh | Niederinduktive Schaltungsanordnung eines Umrichters |
| JP6166701B2 (ja) * | 2014-08-22 | 2017-07-19 | 株式会社東芝 | 半導体装置 |
| CN107112898B (zh) | 2014-11-18 | 2019-06-21 | 通用电气全球采购有限责任公司 | 母线和功率电子装置及制造引线端连接器的方法 |
| US10756057B2 (en) * | 2014-11-28 | 2020-08-25 | Nissan Motor Co., Ltd. | Half-bridge power semiconductor module and method of manufacturing same |
| US9985550B2 (en) | 2014-12-23 | 2018-05-29 | General Electric Company | Systems and methods for reducing loop inductance |
| JP6603676B2 (ja) * | 2015-02-13 | 2019-11-06 | 株式会社日産アーク | ハーフブリッジパワー半導体モジュール及びその製造方法 |
| JP6594000B2 (ja) | 2015-02-26 | 2019-10-23 | ローム株式会社 | 半導体装置 |
| CN106340513B (zh) * | 2015-07-09 | 2019-03-15 | 台达电子工业股份有限公司 | 一种集成控制电路的功率模块 |
| JP6488940B2 (ja) * | 2015-08-07 | 2019-03-27 | 富士電機株式会社 | 半導体装置 |
| US9972569B2 (en) * | 2016-04-12 | 2018-05-15 | General Electric Company | Robust low inductance power module package |
| CN105957860B (zh) * | 2016-05-03 | 2018-07-20 | 扬州国扬电子有限公司 | 一种设有绝缘隔板的功率模块 |
| CN105789192B (zh) * | 2016-05-03 | 2018-11-30 | 扬州国扬电子有限公司 | 一种设有电极大臂的功率模块 |
| CN105810653B (zh) * | 2016-05-03 | 2018-09-28 | 扬州国扬电子有限公司 | 一种设有可共用电极大臂的功率模块 |
| US10347608B2 (en) | 2016-05-27 | 2019-07-09 | General Electric Company | Power module |
| CN107546214B (zh) * | 2016-06-23 | 2020-02-07 | 台达电子工业股份有限公司 | 功率模块封装结构 |
| DE102016216207A1 (de) | 2016-08-29 | 2018-03-01 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Sensors |
| US10021802B2 (en) | 2016-09-19 | 2018-07-10 | General Electric Company | Electronic module assembly having low loop inductance |
| DE102016218207A1 (de) * | 2016-09-22 | 2018-03-22 | Robert Bosch Gmbh | Elektronische Baugruppe, insbesondere eine elektronische Leistungsbaugruppe für Hybridfahrzeuge oder Elektrofahrzeuge |
| JP7210446B2 (ja) * | 2016-11-25 | 2023-01-23 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | パワー半導体モジュール |
| US10212838B2 (en) * | 2017-01-13 | 2019-02-19 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
| IT201700033230A1 (it) * | 2017-03-27 | 2018-09-27 | S M E S P A | Modulo di potenza per un convertitore di grandezze elettriche |
| WO2018207406A1 (ja) * | 2017-05-12 | 2018-11-15 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
| JP7119399B2 (ja) * | 2018-02-06 | 2022-08-17 | 株式会社デンソー | 半導体装置 |
| CN109860160B (zh) * | 2018-12-25 | 2020-10-09 | 扬州国扬电子有限公司 | 一种结构紧凑且寄生电感低的功率模块 |
| DE102019204889A1 (de) * | 2019-04-05 | 2020-10-08 | Robert Bosch Gmbh | Elektronische Schaltungseinheit |
| JP7050732B2 (ja) * | 2019-09-24 | 2022-04-08 | ローム株式会社 | 半導体装置 |
| JP7240541B2 (ja) * | 2019-09-24 | 2023-03-15 | ローム株式会社 | 半導体装置 |
| CN111162051B (zh) * | 2019-12-23 | 2021-08-03 | 湖南国芯半导体科技有限公司 | 功率端子、功率模块封装结构及封装方法 |
| EP3945572A1 (de) * | 2020-07-30 | 2022-02-02 | Siemens Aktiengesellschaft | Leistungshalbleitermodul und herstellungsverfahren für ein leistungshalbleitermodul |
| JP7542390B2 (ja) | 2020-10-08 | 2024-08-30 | 株式会社東芝 | 電気機器及び電力変換装置 |
| WO2022176675A1 (ja) * | 2021-02-16 | 2022-08-25 | 住友電気工業株式会社 | 半導体装置 |
| WO2022209381A1 (ja) * | 2021-04-01 | 2022-10-06 | 住友電気工業株式会社 | 半導体装置 |
| EP4495989A1 (de) * | 2023-07-21 | 2025-01-22 | Siemens Aktiengesellschaft | Halbleiteranordnung mit einem halbleiterelement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347158A (en) * | 1992-08-19 | 1994-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device having a particular terminal arrangement |
| US7227259B2 (en) * | 2002-08-16 | 2007-06-05 | Semikron Elektronik Gmbh & Co. Kg | Low-inductance circuit arrangement for power semiconductor modules |
| US7256489B2 (en) * | 2003-11-04 | 2007-08-14 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus |
| US7291928B2 (en) * | 2002-08-30 | 2007-11-06 | Mitsubishi Denki Kabushiki Kaisha | Electric power semiconductor device |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609528A1 (en) | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Low inductance semiconductor package |
| US5629839A (en) | 1995-09-12 | 1997-05-13 | Allen-Bradley Company, Inc. | Module interconnect adapter for reduced parasitic inductance |
| EP0884781A3 (en) * | 1997-06-12 | 1999-06-30 | Hitachi, Ltd. | Power semiconductor module |
| US6028498A (en) | 1997-09-05 | 2000-02-22 | Hewlett-Packard Company | Low inductance interconnect having a comb-like resilient structure |
| JP3695260B2 (ja) | 1999-11-04 | 2005-09-14 | 株式会社日立製作所 | 半導体モジュール |
| US7012810B2 (en) | 2000-09-20 | 2006-03-14 | Ballard Power Systems Corporation | Leadframe-based module DC bus design to reduce module inductance |
| EP1289014B1 (en) * | 2001-04-02 | 2013-06-19 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device |
| US7187568B2 (en) | 2002-01-16 | 2007-03-06 | Rockwell Automation Technologies, Inc. | Power converter having improved terminal structure |
| DE10227658B4 (de) * | 2002-06-20 | 2012-03-08 | Curamik Electronics Gmbh | Metall-Keramik-Substrat für elektrische Schaltkreise -oder Module, Verfahren zum Herstellen eines solchen Substrates sowie Modul mit einem solchen Substrat |
| US7002249B2 (en) | 2002-11-12 | 2006-02-21 | Primarion, Inc. | Microelectronic component with reduced parasitic inductance and method of fabricating |
| CN101165860B (zh) * | 2003-08-22 | 2010-04-07 | 关西电力株式会社 | 半导体装置及制造方法、使用该半导体装置的电力变换装置 |
| JP2006179856A (ja) * | 2004-11-25 | 2006-07-06 | Fuji Electric Holdings Co Ltd | 絶縁基板および半導体装置 |
| US20060290689A1 (en) | 2005-06-24 | 2006-12-28 | William Grant | Semiconductor half-bridge module with low inductance |
| JP2007042796A (ja) * | 2005-08-02 | 2007-02-15 | Toshiba Corp | 電力用半導体素子及びインバータ装置 |
| JP4603956B2 (ja) * | 2005-08-26 | 2010-12-22 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
| JP4916745B2 (ja) * | 2006-03-28 | 2012-04-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4760585B2 (ja) * | 2006-07-18 | 2011-08-31 | 三菱電機株式会社 | 電力用半導体装置 |
| JP5168866B2 (ja) * | 2006-09-28 | 2013-03-27 | 三菱電機株式会社 | パワー半導体モジュール |
| JP4803068B2 (ja) * | 2007-02-22 | 2011-10-26 | トヨタ自動車株式会社 | 半導体モジュール |
| US7732917B2 (en) * | 2007-10-02 | 2010-06-08 | Rohm Co., Ltd. | Power module |
-
2009
- 2009-10-30 US US12/609,400 patent/US8076696B2/en active Active
-
2010
- 2010-10-19 BR BRPI1004830-8A patent/BRPI1004830B1/pt not_active IP Right Cessation
- 2010-10-22 JP JP2010236945A patent/JP2011097053A/ja active Pending
- 2010-10-27 EP EP10188999.6A patent/EP2317551B1/en active Active
- 2010-10-28 CA CA2719179A patent/CA2719179C/en not_active Expired - Fee Related
- 2010-10-29 CN CN201010538460.1A patent/CN102110680B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347158A (en) * | 1992-08-19 | 1994-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device having a particular terminal arrangement |
| US7227259B2 (en) * | 2002-08-16 | 2007-06-05 | Semikron Elektronik Gmbh & Co. Kg | Low-inductance circuit arrangement for power semiconductor modules |
| US7291928B2 (en) * | 2002-08-30 | 2007-11-06 | Mitsubishi Denki Kabushiki Kaisha | Electric power semiconductor device |
| US7256489B2 (en) * | 2003-11-04 | 2007-08-14 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011097053A (ja) | 2011-05-12 |
| CA2719179C (en) | 2013-08-13 |
| EP2317551A1 (en) | 2011-05-04 |
| CN102110680A (zh) | 2011-06-29 |
| EP2317551B1 (en) | 2020-04-29 |
| BRPI1004830B1 (pt) | 2020-02-27 |
| US8076696B2 (en) | 2011-12-13 |
| CA2719179A1 (en) | 2011-04-30 |
| BRPI1004830A2 (pt) | 2013-02-19 |
| US20110101515A1 (en) | 2011-05-05 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |