JP2011097053A - インダクタンスを低減した電力モジュール組立体 - Google Patents

インダクタンスを低減した電力モジュール組立体 Download PDF

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JP2011097053A
JP2011097053A JP2010236945A JP2010236945A JP2011097053A JP 2011097053 A JP2011097053 A JP 2011097053A JP 2010236945 A JP2010236945 A JP 2010236945A JP 2010236945 A JP2010236945 A JP 2010236945A JP 2011097053 A JP2011097053 A JP 2011097053A
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positive
power semiconductor
output
lead
electrically coupled
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JP2011097053A5 (enExample
Inventor
Richard Alfred Beaupre
リチャード・アルフレッド・ビュープレ
Eladio C Delgado
エラディオ・クレメンテ・デルガド
Ljubisa Dragoljub Stevanovic
リュビサ・ドラゴリュブ・ステヴァノヴィック
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General Electric Co
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General Electric Co
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)
JP2010236945A 2009-10-30 2010-10-22 インダクタンスを低減した電力モジュール組立体 Pending JP2011097053A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/609,400 US8076696B2 (en) 2009-10-30 2009-10-30 Power module assembly with reduced inductance

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Publication Number Publication Date
JP2011097053A true JP2011097053A (ja) 2011-05-12
JP2011097053A5 JP2011097053A5 (enExample) 2012-11-15

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US (1) US8076696B2 (enExample)
EP (1) EP2317551B1 (enExample)
JP (1) JP2011097053A (enExample)
CN (1) CN102110680B (enExample)
BR (1) BRPI1004830B1 (enExample)
CA (1) CA2719179C (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015026724A (ja) * 2013-07-26 2015-02-05 住友電気工業株式会社 半導体モジュール
WO2015121900A1 (ja) * 2014-02-11 2015-08-20 三菱電機株式会社 電力用半導体モジュール
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
JP2017037892A (ja) * 2015-08-07 2017-02-16 富士電機株式会社 半導体装置
CN109417051A (zh) * 2016-04-12 2019-03-01 通用电气公司 具有鲁棒性的低电感功率模块封装
JP2019220719A (ja) * 2019-09-24 2019-12-26 ローム株式会社 半導体装置
JP2020501353A (ja) * 2016-11-25 2020-01-16 アーベーベー・シュバイツ・アーゲー パワー半導体モジュール
US10892218B2 (en) 2015-02-26 2021-01-12 Rohm Co., Ltd. Semiconductor device
JP2021132234A (ja) * 2017-01-13 2021-09-09 クリー ファイエットヴィル インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP2022526411A (ja) * 2019-04-05 2022-05-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP2022091899A (ja) * 2019-09-24 2022-06-21 ローム株式会社 半導体装置
JPWO2022176675A1 (enExample) * 2021-02-16 2022-08-25
JPWO2022209381A1 (enExample) * 2021-04-01 2022-10-06
US11848622B2 (en) 2020-10-08 2023-12-19 Kabushiki Kaisha Toshiba Electronic device and power converter

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803001B2 (en) 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
US8675379B2 (en) 2011-08-08 2014-03-18 General Electric Company Power converting apparatus having improved electro-thermal characteristics
US8487416B2 (en) 2011-09-28 2013-07-16 General Electric Company Coaxial power module
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US8847384B2 (en) 2012-10-15 2014-09-30 Toyota Motor Engineering & Manufacturing North America, Inc. Power modules and power module arrays having a modular design
KR101890752B1 (ko) * 2012-11-01 2018-08-22 삼성전자 주식회사 균일한 병렬 스위치 특성을 갖는 파워모듈용 기판 및 이를 포함하는 파워모듈
US9391055B2 (en) 2012-12-05 2016-07-12 Lockheed Martin Corporation Power module having stacked substrates arranged to provide tightly-coupled source and return current paths
KR102034717B1 (ko) 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
DE102013104522B3 (de) * 2013-05-03 2014-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Subeinheiten und Anordnung hiermit
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
DE102014110617B4 (de) * 2014-07-28 2023-05-04 Infineon Technologies Ag Leistungshalbleitermodulsystem mit hoher Isolationsfestigkeit und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung mit einer hohen Isolationsfestigkeit
DE102014111421A1 (de) * 2014-08-11 2016-02-11 Woodward Kempen Gmbh Niederinduktive Schaltungsanordnung eines Umrichters
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
CN107112898B (zh) 2014-11-18 2019-06-21 通用电气全球采购有限责任公司 母线和功率电子装置及制造引线端连接器的方法
JP6288301B2 (ja) * 2014-11-28 2018-03-14 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US9985550B2 (en) 2014-12-23 2018-05-29 General Electric Company Systems and methods for reducing loop inductance
CN107210290B (zh) * 2015-02-13 2019-07-30 株式会社日产Arc 半桥式功率半导体模块及其制造方法
CN106340513B (zh) * 2015-07-09 2019-03-15 台达电子工业股份有限公司 一种集成控制电路的功率模块
CN105810653B (zh) * 2016-05-03 2018-09-28 扬州国扬电子有限公司 一种设有可共用电极大臂的功率模块
CN105789192B (zh) * 2016-05-03 2018-11-30 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN105957860B (zh) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 一种设有绝缘隔板的功率模块
US10347608B2 (en) 2016-05-27 2019-07-09 General Electric Company Power module
CN107546214B (zh) * 2016-06-23 2020-02-07 台达电子工业股份有限公司 功率模块封装结构
DE102016216207A1 (de) 2016-08-29 2018-03-01 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Sensors
US10021802B2 (en) * 2016-09-19 2018-07-10 General Electric Company Electronic module assembly having low loop inductance
DE102016218207A1 (de) * 2016-09-22 2018-03-22 Robert Bosch Gmbh Elektronische Baugruppe, insbesondere eine elektronische Leistungsbaugruppe für Hybridfahrzeuge oder Elektrofahrzeuge
IT201700033230A1 (it) * 2017-03-27 2018-09-27 S M E S P A Modulo di potenza per un convertitore di grandezze elettriche
DE112018002452B4 (de) * 2017-05-12 2023-03-02 Mitsubishi Electric Corporation Halbleitermodul und Leistungswandler
JP7119399B2 (ja) * 2018-02-06 2022-08-17 株式会社デンソー 半導体装置
CN109860160B (zh) * 2018-12-25 2020-10-09 扬州国扬电子有限公司 一种结构紧凑且寄生电感低的功率模块
CN111162051B (zh) * 2019-12-23 2021-08-03 湖南国芯半导体科技有限公司 功率端子、功率模块封装结构及封装方法
EP4495989A1 (de) * 2023-07-21 2025-01-22 Siemens Aktiengesellschaft Halbleiteranordnung mit einem halbleiterelement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669415A (ja) * 1992-08-19 1994-03-11 Toshiba Corp 半導体装置
JP2007042796A (ja) * 2005-08-02 2007-02-15 Toshiba Corp 電力用半導体素子及びインバータ装置
JP2008205380A (ja) * 2007-02-22 2008-09-04 Toyota Motor Corp 半導体モジュール

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609528A1 (en) 1993-02-01 1994-08-10 Motorola, Inc. Low inductance semiconductor package
US5629839A (en) * 1995-09-12 1997-05-13 Allen-Bradley Company, Inc. Module interconnect adapter for reduced parasitic inductance
EP0884781A3 (en) * 1997-06-12 1999-06-30 Hitachi, Ltd. Power semiconductor module
US6028498A (en) * 1997-09-05 2000-02-22 Hewlett-Packard Company Low inductance interconnect having a comb-like resilient structure
JP3695260B2 (ja) 1999-11-04 2005-09-14 株式会社日立製作所 半導体モジュール
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
EP1289014B1 (en) * 2001-04-02 2013-06-19 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
US7187568B2 (en) * 2002-01-16 2007-03-06 Rockwell Automation Technologies, Inc. Power converter having improved terminal structure
DE10227658B4 (de) * 2002-06-20 2012-03-08 Curamik Electronics Gmbh Metall-Keramik-Substrat für elektrische Schaltkreise -oder Module, Verfahren zum Herstellen eines solchen Substrates sowie Modul mit einem solchen Substrat
DE10237561C1 (de) * 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule
JP3958156B2 (ja) * 2002-08-30 2007-08-15 三菱電機株式会社 電力用半導体装置
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
EP2398049A3 (en) * 2003-08-22 2012-12-19 The Kansai Electric Power Co., Inc. Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
JP2005142189A (ja) * 2003-11-04 2005-06-02 Toyota Industries Corp 半導体装置
JP2006179856A (ja) * 2004-11-25 2006-07-06 Fuji Electric Holdings Co Ltd 絶縁基板および半導体装置
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP4603956B2 (ja) * 2005-08-26 2010-12-22 日立オートモティブシステムズ株式会社 電力変換装置
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4760585B2 (ja) * 2006-07-18 2011-08-31 三菱電機株式会社 電力用半導体装置
JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
US7732917B2 (en) * 2007-10-02 2010-06-08 Rohm Co., Ltd. Power module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669415A (ja) * 1992-08-19 1994-03-11 Toshiba Corp 半導体装置
JP2007042796A (ja) * 2005-08-02 2007-02-15 Toshiba Corp 電力用半導体素子及びインバータ装置
JP2008205380A (ja) * 2007-02-22 2008-09-04 Toyota Motor Corp 半導体モジュール

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015026724A (ja) * 2013-07-26 2015-02-05 住友電気工業株式会社 半導体モジュール
WO2015121900A1 (ja) * 2014-02-11 2015-08-20 三菱電機株式会社 電力用半導体モジュール
JPWO2015121900A1 (ja) * 2014-02-11 2017-03-30 三菱電機株式会社 電力用半導体モジュール
US9941255B2 (en) 2014-02-11 2018-04-10 Mitsubishi Electric Corporation Power semiconductor module
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US10892218B2 (en) 2015-02-26 2021-01-12 Rohm Co., Ltd. Semiconductor device
JP2017037892A (ja) * 2015-08-07 2017-02-16 富士電機株式会社 半導体装置
CN109417051A (zh) * 2016-04-12 2019-03-01 通用电气公司 具有鲁棒性的低电感功率模块封装
JP7210446B2 (ja) 2016-11-25 2023-01-23 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト パワー半導体モジュール
JP2020501353A (ja) * 2016-11-25 2020-01-16 アーベーベー・シュバイツ・アーゲー パワー半導体モジュール
JP2021132234A (ja) * 2017-01-13 2021-09-09 クリー ファイエットヴィル インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP7297815B2 (ja) 2017-01-13 2023-06-26 ウルフスピード インコーポレイテッド パワーデバイスを並列接続するための低インダクタンスおよび高速スイッチングを有するハイパワー多層モジュール
JP2022526411A (ja) * 2019-04-05 2022-05-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP7240526B2 (ja) 2019-04-05 2023-03-15 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子スイッチングユニット
JP7050732B2 (ja) 2019-09-24 2022-04-08 ローム株式会社 半導体装置
JP2022091899A (ja) * 2019-09-24 2022-06-21 ローム株式会社 半導体装置
JP2019220719A (ja) * 2019-09-24 2019-12-26 ローム株式会社 半導体装置
JP7240541B2 (ja) 2019-09-24 2023-03-15 ローム株式会社 半導体装置
US11848622B2 (en) 2020-10-08 2023-12-19 Kabushiki Kaisha Toshiba Electronic device and power converter
JPWO2022176675A1 (enExample) * 2021-02-16 2022-08-25
JPWO2022209381A1 (enExample) * 2021-04-01 2022-10-06

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