BRPI1004830B1 - Módulo de potência - Google Patents

Módulo de potência Download PDF

Info

Publication number
BRPI1004830B1
BRPI1004830B1 BRPI1004830-8A BRPI1004830A BRPI1004830B1 BR PI1004830 B1 BRPI1004830 B1 BR PI1004830B1 BR PI1004830 A BRPI1004830 A BR PI1004830A BR PI1004830 B1 BRPI1004830 B1 BR PI1004830B1
Authority
BR
Brazil
Prior art keywords
power semiconductor
terminal
conductors
positive
negative
Prior art date
Application number
BRPI1004830-8A
Other languages
English (en)
Portuguese (pt)
Inventor
Richard Alfred Beaupre
Eladio Clemente Delgado
Ljubisa Dragoljub Stevanovic
Original Assignee
General Electric Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company filed Critical General Electric Company
Publication of BRPI1004830A2 publication Critical patent/BRPI1004830A2/pt
Publication of BRPI1004830B1 publication Critical patent/BRPI1004830B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)
BRPI1004830-8A 2009-10-30 2010-10-19 Módulo de potência BRPI1004830B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/609,400 2009-10-30
US12/609,400 US8076696B2 (en) 2009-10-30 2009-10-30 Power module assembly with reduced inductance

Publications (2)

Publication Number Publication Date
BRPI1004830A2 BRPI1004830A2 (pt) 2013-02-19
BRPI1004830B1 true BRPI1004830B1 (pt) 2020-02-27

Family

ID=43533445

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1004830-8A BRPI1004830B1 (pt) 2009-10-30 2010-10-19 Módulo de potência

Country Status (6)

Country Link
US (1) US8076696B2 (enExample)
EP (1) EP2317551B1 (enExample)
JP (1) JP2011097053A (enExample)
CN (1) CN102110680B (enExample)
BR (1) BRPI1004830B1 (enExample)
CA (1) CA2719179C (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803001B2 (en) 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
US8675379B2 (en) 2011-08-08 2014-03-18 General Electric Company Power converting apparatus having improved electro-thermal characteristics
US8487416B2 (en) 2011-09-28 2013-07-16 General Electric Company Coaxial power module
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US8847384B2 (en) 2012-10-15 2014-09-30 Toyota Motor Engineering & Manufacturing North America, Inc. Power modules and power module arrays having a modular design
KR101890752B1 (ko) * 2012-11-01 2018-08-22 삼성전자 주식회사 균일한 병렬 스위치 특성을 갖는 파워모듈용 기판 및 이를 포함하는 파워모듈
US9391055B2 (en) 2012-12-05 2016-07-12 Lockheed Martin Corporation Power module having stacked substrates arranged to provide tightly-coupled source and return current paths
KR102034717B1 (ko) 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
DE102013104522B3 (de) * 2013-05-03 2014-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Subeinheiten und Anordnung hiermit
JP6255771B2 (ja) * 2013-07-26 2018-01-10 住友電気工業株式会社 半導体モジュール
WO2015121900A1 (ja) * 2014-02-11 2015-08-20 三菱電機株式会社 電力用半導体モジュール
JP6331543B2 (ja) * 2014-03-24 2018-05-30 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
DE102014110617B4 (de) * 2014-07-28 2023-05-04 Infineon Technologies Ag Leistungshalbleitermodulsystem mit hoher Isolationsfestigkeit und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung mit einer hohen Isolationsfestigkeit
DE102014111421A1 (de) * 2014-08-11 2016-02-11 Woodward Kempen Gmbh Niederinduktive Schaltungsanordnung eines Umrichters
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
CN107112898B (zh) 2014-11-18 2019-06-21 通用电气全球采购有限责任公司 母线和功率电子装置及制造引线端连接器的方法
JP6288301B2 (ja) * 2014-11-28 2018-03-14 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US9985550B2 (en) 2014-12-23 2018-05-29 General Electric Company Systems and methods for reducing loop inductance
CN107210290B (zh) * 2015-02-13 2019-07-30 株式会社日产Arc 半桥式功率半导体模块及其制造方法
JP6594000B2 (ja) 2015-02-26 2019-10-23 ローム株式会社 半導体装置
CN106340513B (zh) * 2015-07-09 2019-03-15 台达电子工业股份有限公司 一种集成控制电路的功率模块
JP6488940B2 (ja) * 2015-08-07 2019-03-27 富士電機株式会社 半導体装置
US9972569B2 (en) * 2016-04-12 2018-05-15 General Electric Company Robust low inductance power module package
CN105810653B (zh) * 2016-05-03 2018-09-28 扬州国扬电子有限公司 一种设有可共用电极大臂的功率模块
CN105789192B (zh) * 2016-05-03 2018-11-30 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN105957860B (zh) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 一种设有绝缘隔板的功率模块
US10347608B2 (en) 2016-05-27 2019-07-09 General Electric Company Power module
CN107546214B (zh) * 2016-06-23 2020-02-07 台达电子工业股份有限公司 功率模块封装结构
DE102016216207A1 (de) 2016-08-29 2018-03-01 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Sensors
US10021802B2 (en) * 2016-09-19 2018-07-10 General Electric Company Electronic module assembly having low loop inductance
DE102016218207A1 (de) * 2016-09-22 2018-03-22 Robert Bosch Gmbh Elektronische Baugruppe, insbesondere eine elektronische Leistungsbaugruppe für Hybridfahrzeuge oder Elektrofahrzeuge
CN109997223B (zh) * 2016-11-25 2023-06-30 日立能源瑞士股份公司 功率半导体模块
US10212838B2 (en) * 2017-01-13 2019-02-19 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
IT201700033230A1 (it) * 2017-03-27 2018-09-27 S M E S P A Modulo di potenza per un convertitore di grandezze elettriche
DE112018002452B4 (de) * 2017-05-12 2023-03-02 Mitsubishi Electric Corporation Halbleitermodul und Leistungswandler
JP7119399B2 (ja) * 2018-02-06 2022-08-17 株式会社デンソー 半導体装置
CN109860160B (zh) * 2018-12-25 2020-10-09 扬州国扬电子有限公司 一种结构紧凑且寄生电感低的功率模块
DE102019204889A1 (de) * 2019-04-05 2020-10-08 Robert Bosch Gmbh Elektronische Schaltungseinheit
JP7240541B2 (ja) * 2019-09-24 2023-03-15 ローム株式会社 半導体装置
JP7050732B2 (ja) * 2019-09-24 2022-04-08 ローム株式会社 半導体装置
CN111162051B (zh) * 2019-12-23 2021-08-03 湖南国芯半导体科技有限公司 功率端子、功率模块封装结构及封装方法
JP7542390B2 (ja) 2020-10-08 2024-08-30 株式会社東芝 電気機器及び電力変換装置
WO2022176675A1 (ja) * 2021-02-16 2022-08-25 住友電気工業株式会社 半導体装置
JPWO2022209381A1 (enExample) * 2021-04-01 2022-10-06
EP4495989A1 (de) * 2023-07-21 2025-01-22 Siemens Aktiengesellschaft Halbleiteranordnung mit einem halbleiterelement

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3053298B2 (ja) 1992-08-19 2000-06-19 株式会社東芝 半導体装置
EP0609528A1 (en) 1993-02-01 1994-08-10 Motorola, Inc. Low inductance semiconductor package
US5629839A (en) * 1995-09-12 1997-05-13 Allen-Bradley Company, Inc. Module interconnect adapter for reduced parasitic inductance
EP0884781A3 (en) * 1997-06-12 1999-06-30 Hitachi, Ltd. Power semiconductor module
US6028498A (en) * 1997-09-05 2000-02-22 Hewlett-Packard Company Low inductance interconnect having a comb-like resilient structure
JP3695260B2 (ja) 1999-11-04 2005-09-14 株式会社日立製作所 半導体モジュール
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
EP1289014B1 (en) * 2001-04-02 2013-06-19 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
US7187568B2 (en) * 2002-01-16 2007-03-06 Rockwell Automation Technologies, Inc. Power converter having improved terminal structure
DE10227658B4 (de) * 2002-06-20 2012-03-08 Curamik Electronics Gmbh Metall-Keramik-Substrat für elektrische Schaltkreise -oder Module, Verfahren zum Herstellen eines solchen Substrates sowie Modul mit einem solchen Substrat
DE10237561C1 (de) * 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule
JP3958156B2 (ja) * 2002-08-30 2007-08-15 三菱電機株式会社 電力用半導体装置
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
EP2398049A3 (en) * 2003-08-22 2012-12-19 The Kansai Electric Power Co., Inc. Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
JP2005142189A (ja) * 2003-11-04 2005-06-02 Toyota Industries Corp 半導体装置
JP2006179856A (ja) * 2004-11-25 2006-07-06 Fuji Electric Holdings Co Ltd 絶縁基板および半導体装置
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP2007042796A (ja) * 2005-08-02 2007-02-15 Toshiba Corp 電力用半導体素子及びインバータ装置
JP4603956B2 (ja) * 2005-08-26 2010-12-22 日立オートモティブシステムズ株式会社 電力変換装置
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4760585B2 (ja) * 2006-07-18 2011-08-31 三菱電機株式会社 電力用半導体装置
JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
JP4803068B2 (ja) * 2007-02-22 2011-10-26 トヨタ自動車株式会社 半導体モジュール
US7732917B2 (en) * 2007-10-02 2010-06-08 Rohm Co., Ltd. Power module

Also Published As

Publication number Publication date
EP2317551A1 (en) 2011-05-04
BRPI1004830A2 (pt) 2013-02-19
CN102110680A (zh) 2011-06-29
EP2317551B1 (en) 2020-04-29
CN102110680B (zh) 2019-08-06
CA2719179C (en) 2013-08-13
JP2011097053A (ja) 2011-05-12
US8076696B2 (en) 2011-12-13
US20110101515A1 (en) 2011-05-05
CA2719179A1 (en) 2011-04-30

Similar Documents

Publication Publication Date Title
BRPI1004830B1 (pt) Módulo de potência
US12068741B2 (en) Switching device and electronic circuit
US9129932B2 (en) Semiconductor module
US11246244B2 (en) Power electronics assembly
US9373617B2 (en) High current, low switching loss SiC power module
US10153708B2 (en) Three-level power converter
US9871465B2 (en) Semiconductor device including positive, negative and intermediate potential conductor plates
US11664298B2 (en) Semiconductor module
CN110235244B (zh) 功率半导体模块以及电力转换装置
US8934277B2 (en) Semiconductor system with at least one three-level electric power inverter circuit
CN111900156B (zh) 高电流、低切换损耗SiC功率模块
US12068289B2 (en) Power module
US8675379B2 (en) Power converting apparatus having improved electro-thermal characteristics
US20230282561A1 (en) Power semiconductor module and power conversion device
US20240355888A1 (en) Semiconductor device and power conversion device

Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 19/10/2010, OBSERVADAS AS CONDICOES LEGAIS.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 11A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2640 DE 10-08-2021 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.