JP2011060893A5 - - Google Patents

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Publication number
JP2011060893A5
JP2011060893A5 JP2009207071A JP2009207071A JP2011060893A5 JP 2011060893 A5 JP2011060893 A5 JP 2011060893A5 JP 2009207071 A JP2009207071 A JP 2009207071A JP 2009207071 A JP2009207071 A JP 2009207071A JP 2011060893 A5 JP2011060893 A5 JP 2011060893A5
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JP
Japan
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JP2009207071A
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JP5320619B2 (ja
JP2011060893A (ja
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Priority claimed from JP2009207071A external-priority patent/JP5320619B2/ja
Priority to JP2009207071A priority Critical patent/JP5320619B2/ja
Priority to US12/827,259 priority patent/US8435417B2/en
Priority to KR1020100085211A priority patent/KR101160538B1/ko
Priority to CN2010102779835A priority patent/CN102013391B/zh
Priority to DE102010040441.1A priority patent/DE102010040441B4/de
Publication of JP2011060893A publication Critical patent/JP2011060893A/ja
Publication of JP2011060893A5 publication Critical patent/JP2011060893A5/ja
Publication of JP5320619B2 publication Critical patent/JP5320619B2/ja
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JP2009207071A 2009-09-08 2009-09-08 半導体装置の製造方法 Active JP5320619B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009207071A JP5320619B2 (ja) 2009-09-08 2009-09-08 半導体装置の製造方法
US12/827,259 US8435417B2 (en) 2009-09-08 2010-06-30 Method of manufacturing semiconductor device
KR1020100085211A KR101160538B1 (ko) 2009-09-08 2010-09-01 반도체장치의 제조방법
DE102010040441.1A DE102010040441B4 (de) 2009-09-08 2010-09-08 Herstellungsverfahren einer Halbleitervorrichtung
CN2010102779835A CN102013391B (zh) 2009-09-08 2010-09-08 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009207071A JP5320619B2 (ja) 2009-09-08 2009-09-08 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011060893A JP2011060893A (ja) 2011-03-24
JP2011060893A5 true JP2011060893A5 (ja) 2012-02-02
JP5320619B2 JP5320619B2 (ja) 2013-10-23

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ID=43648117

Family Applications (1)

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JP2009207071A Active JP5320619B2 (ja) 2009-09-08 2009-09-08 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US8435417B2 (ja)
JP (1) JP5320619B2 (ja)
KR (1) KR101160538B1 (ja)
CN (1) CN102013391B (ja)
DE (1) DE102010040441B4 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5599342B2 (ja) 2011-02-23 2014-10-01 三菱電機株式会社 半導体装置の製造方法
US9390968B2 (en) 2011-09-29 2016-07-12 Intel Corporation Low temperature thin wafer backside vacuum process with backgrinding tape
KR101876579B1 (ko) * 2012-09-13 2018-07-10 매그나칩 반도체 유한회사 전력용 반도체 소자 및 그 소자의 제조 방법
JP6095314B2 (ja) * 2012-10-02 2017-03-15 株式会社ディスコ ウエーハの加工方法
JP2014133855A (ja) * 2012-12-11 2014-07-24 Fujifilm Corp シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法
CN103887248B (zh) * 2012-12-21 2017-12-12 比亚迪股份有限公司 一种igbt结构及其制备方法
JP2014187110A (ja) * 2013-03-22 2014-10-02 Furukawa Electric Co Ltd:The 半導体ウエハの製造方法および半導体ウエハ
US10741487B2 (en) * 2018-04-24 2020-08-11 Semiconductor Components Industries, Llc SOI substrate and related methods
TWI816968B (zh) 2019-01-23 2023-10-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN112864013B (zh) * 2021-01-18 2023-10-03 长鑫存储技术有限公司 半导体器件处理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252109A (ja) * 1993-02-26 1994-09-09 Fujitsu Ltd 半導体装置の製造方法
DE19505906A1 (de) 1995-02-21 1996-08-22 Siemens Ag Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite
US5851928A (en) * 1995-11-27 1998-12-22 Motorola, Inc. Method of etching a semiconductor substrate
JP3515917B2 (ja) * 1998-12-01 2004-04-05 シャープ株式会社 半導体装置の製造方法
JP3514712B2 (ja) * 1999-12-01 2004-03-31 シャープ株式会社 半導体ウエハの裏面研削装置
KR20020002785A (ko) 2000-06-30 2002-01-10 박종섭 반도체소자의 평탄화 방법
US6520844B2 (en) * 2000-08-04 2003-02-18 Sharp Kabushiki Kaisha Method of thinning semiconductor wafer capable of preventing its front from being contaminated and back grinding device for semiconductor wafers
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
JP2003059878A (ja) 2001-08-08 2003-02-28 Hitachi Ltd 半導体チップ及びその製造方法
JP2003151939A (ja) * 2001-11-19 2003-05-23 Sumitomo Mitsubishi Silicon Corp Ｓｏｉ基板の製造方法
DE10258508B3 (de) 2002-12-14 2004-09-09 Infineon Technologies Ag Bruchfester scheibenförmiger Halbleiterwafer sowie zugehöriges Herstellungsverfahren
JP2005317634A (ja) * 2004-04-27 2005-11-10 Nitto Denko Corp 半導体装置の製造方法およびそれに用いる粘着シート
JP4306540B2 (ja) * 2004-06-09 2009-08-05 セイコーエプソン株式会社 半導体基板の薄型加工方法
JP4613709B2 (ja) * 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
JP4816278B2 (ja) 2006-06-15 2011-11-16 富士電機株式会社 半導体装置の製造方法
JP2008311513A (ja) 2007-06-15 2008-12-25 Lintec Corp 表面保護用シートの支持構造および半導体ウエハの研削方法
JP2009094335A (ja) 2007-10-10 2009-04-30 Nec Electronics Corp 半導体装置及び半導体装置の製造方法

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