JP2011049566A5 - - Google Patents

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Publication number
JP2011049566A5
JP2011049566A5 JP2010198954A JP2010198954A JP2011049566A5 JP 2011049566 A5 JP2011049566 A5 JP 2011049566A5 JP 2010198954 A JP2010198954 A JP 2010198954A JP 2010198954 A JP2010198954 A JP 2010198954A JP 2011049566 A5 JP2011049566 A5 JP 2011049566A5
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JP
Japan
Prior art keywords
substrate
sensor substrate
processing apparatus
processing
detection element
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JP2010198954A
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English (en)
Japanese (ja)
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JP2011049566A (ja
JP5496834B2 (ja
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Priority to JP2010198954A priority Critical patent/JP5496834B2/ja
Priority claimed from JP2010198954A external-priority patent/JP5496834B2/ja
Publication of JP2011049566A publication Critical patent/JP2011049566A/ja
Publication of JP2011049566A5 publication Critical patent/JP2011049566A5/ja
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Publication of JP5496834B2 publication Critical patent/JP5496834B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2010198954A 1999-05-07 2010-09-06 センサ基板 Expired - Fee Related JP5496834B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010198954A JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12695299 1999-05-07
JP1999126952 1999-05-07
JP2010198954A JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000617488A Division JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2011049566A JP2011049566A (ja) 2011-03-10
JP2011049566A5 true JP2011049566A5 (enExample) 2011-04-21
JP5496834B2 JP5496834B2 (ja) 2014-05-21

Family

ID=14947967

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000617488A Expired - Lifetime JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置
JP2010198954A Expired - Fee Related JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000617488A Expired - Lifetime JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置

Country Status (4)

Country Link
US (1) US6553277B1 (enExample)
JP (2) JP4776783B2 (enExample)
KR (1) KR100674624B1 (enExample)
WO (1) WO2000068986A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7960670B2 (en) 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
US7282889B2 (en) * 2001-04-19 2007-10-16 Onwafer Technologies, Inc. Maintenance unit for a sensor apparatus
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US6889568B2 (en) * 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
KR100465877B1 (ko) * 2002-08-23 2005-01-13 삼성전자주식회사 반도체 식각 장치
JP3916549B2 (ja) * 2002-10-31 2007-05-16 東京エレクトロン株式会社 プロセスモニタ及び半導体製造装置
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7135852B2 (en) * 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US7151366B2 (en) * 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
DE10314150A1 (de) * 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
US7403834B2 (en) * 2003-05-08 2008-07-22 Regents Of The University Of California Methods of and apparatuses for controlling process profiles
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
US7667588B2 (en) * 2004-09-27 2010-02-23 Siemens Industry, Inc. Cage telemetry module and system
US20060234398A1 (en) * 2005-04-15 2006-10-19 International Business Machines Corporation Single ic-chip design on wafer with an embedded sensor utilizing rf capabilities to enable real-time data transmission
US8604361B2 (en) 2005-12-13 2013-12-10 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
JP2007178253A (ja) * 2005-12-28 2007-07-12 Tokyo Electron Ltd 温度測定装置および温度測定方法
JP4904822B2 (ja) * 2006-01-16 2012-03-28 東京エレクトロン株式会社 温度測定機能を有する装置
US7555948B2 (en) 2006-05-01 2009-07-07 Lynn Karl Wiese Process condition measuring device with shielding
US7540188B2 (en) 2006-05-01 2009-06-02 Lynn Karl Wiese Process condition measuring device with shielding
JP2008139067A (ja) * 2006-11-30 2008-06-19 Dainippon Screen Mfg Co Ltd 温度測定用基板および温度測定システム
US8104342B2 (en) 2007-02-23 2012-01-31 Kla-Tencor Corporation Process condition measuring device
WO2009116383A1 (ja) * 2008-03-17 2009-09-24 東京エレクトロン株式会社 制御装置及び制御方法
US20100151127A1 (en) * 2008-12-12 2010-06-17 Applied Materials, Inc. Apparatus and method for preventing process system contamination
US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8538572B2 (en) * 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8676537B2 (en) * 2009-08-07 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Portable wireless sensor
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US8681493B2 (en) 2011-05-10 2014-03-25 Kla-Tencor Corporation Heat shield module for substrate-like metrology device
KR101899784B1 (ko) * 2011-09-01 2018-09-21 세메스 주식회사 공정 챔버 모니터링 장치 및 방법
KR101334384B1 (ko) 2012-08-31 2013-11-29 한국생산기술연구원 공정챔버 내부의 공정가스 분석 장치
JP5596832B2 (ja) * 2013-07-29 2014-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法のRun−to−Run制御方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US10083883B2 (en) * 2016-06-20 2018-09-25 Applied Materials, Inc. Wafer processing equipment having capacitive micro sensors
US11468590B2 (en) * 2018-04-24 2022-10-11 Cyberoptics Corporation Wireless substrate-like teaching sensor for semiconductor processing
KR102026733B1 (ko) * 2018-05-11 2019-09-30 엘지전자 주식회사 플라즈마 공정 측정 센서 및 그 제조 방법
JP7341237B2 (ja) * 2018-12-03 2023-09-08 ラム リサーチ コーポレーション ピンリフター試験基板
CN111323076A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 检测装置及工艺腔室检测方法
KR102677514B1 (ko) * 2019-05-22 2024-06-21 삼성전자주식회사 압력 측정 장치
KR102769839B1 (ko) * 2019-09-09 2025-02-20 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US12009235B2 (en) 2020-12-01 2024-06-11 Applied Materials, Inc. In-chamber low-profile sensor assembly
JPWO2024005035A1 (enExample) * 2022-06-30 2024-01-04
KR20240115067A (ko) * 2023-01-18 2024-07-25 삼성전자주식회사 플라즈마 진단 장치 및 그것의 동작 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371630A (ja) 1989-08-10 1991-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH03283608A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd 半導体基板
JPH05335284A (ja) * 1992-06-03 1993-12-17 Sony Corp 温度測定装置とこれを用いた温度測定方法
JPH0676193A (ja) 1992-06-10 1994-03-18 Seiko Epson Corp 真空チャンバー内の情報計測方法およびその装置
JP3178098B2 (ja) * 1992-07-31 2001-06-18 ソニー株式会社 温度センサとその製法
JP3250285B2 (ja) * 1992-11-26 2002-01-28 セイコーエプソン株式会社 情報計測手段を備えた被処理基板
JPH0712667A (ja) 1993-06-29 1995-01-17 Hitachi Ltd 物理量センサおよび物理量センサシステム
US5466614A (en) * 1993-09-20 1995-11-14 At&T Global Information Solutions Company Structure and method for remotely measuring process data
US5444637A (en) * 1993-09-28 1995-08-22 Advanced Micro Devices, Inc. Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
JPH08306665A (ja) * 1995-04-28 1996-11-22 Ricoh Co Ltd 真空装置内における物理量測定装置
JP3249911B2 (ja) 1996-01-08 2002-01-28 東京エレクトロン株式会社 温度測定装置、処理装置及び処理方法
JP3396015B2 (ja) * 1996-08-30 2003-04-14 東京エレクトロン株式会社 イオンエネルギー測定方法及び装置、及びそれを利用したプラズマ処理装置
JP3798491B2 (ja) 1997-01-08 2006-07-19 東京エレクトロン株式会社 ドライエッチング方法
JP2000293829A (ja) * 1999-02-02 2000-10-20 Hitachi Ltd 基板処理装置及び基板処理方法
US6691068B1 (en) * 2000-08-22 2004-02-10 Onwafer Technologies, Inc. Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control

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