JP4776783B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP4776783B2
JP4776783B2 JP2000617488A JP2000617488A JP4776783B2 JP 4776783 B2 JP4776783 B2 JP 4776783B2 JP 2000617488 A JP2000617488 A JP 2000617488A JP 2000617488 A JP2000617488 A JP 2000617488A JP 4776783 B2 JP4776783 B2 JP 4776783B2
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Prior art keywords
substrate
processed
processing
information
vacuum processing
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Expired - Lifetime
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Japanese (ja)
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JPWO2000068986A1 (ja
Inventor
昭 二 八木沢
原 弘 光 神
川 浩 西
藤 高 司 伊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
JP2000617488A 1999-05-07 2000-05-02 基板処理方法及び基板処理装置 Expired - Lifetime JP4776783B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000617488A JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-126952 1999-05-07
JP12695299 1999-05-07
JP1999126952 1999-05-07
PCT/JP2000/002905 WO2000068986A1 (fr) 1999-05-07 2000-05-02 Procédé et appareil de traitement sous vide
JP2000617488A JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010198954A Division JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Publications (2)

Publication Number Publication Date
JPWO2000068986A1 JPWO2000068986A1 (ja) 2002-12-10
JP4776783B2 true JP4776783B2 (ja) 2011-09-21

Family

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JP2000617488A Expired - Lifetime JP4776783B2 (ja) 1999-05-07 2000-05-02 基板処理方法及び基板処理装置
JP2010198954A Expired - Fee Related JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Family Applications After (1)

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JP2010198954A Expired - Fee Related JP5496834B2 (ja) 1999-05-07 2010-09-06 センサ基板

Country Status (4)

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US (1) US6553277B1 (enExample)
JP (2) JP4776783B2 (enExample)
KR (1) KR100674624B1 (enExample)
WO (1) WO2000068986A1 (enExample)

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US6889568B2 (en) * 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
KR100465877B1 (ko) * 2002-08-23 2005-01-13 삼성전자주식회사 반도체 식각 장치
JP3916549B2 (ja) * 2002-10-31 2007-05-16 東京エレクトロン株式会社 プロセスモニタ及び半導体製造装置
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7135852B2 (en) * 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US7151366B2 (en) * 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
DE10314150A1 (de) * 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
US7403834B2 (en) * 2003-05-08 2008-07-22 Regents Of The University Of California Methods of and apparatuses for controlling process profiles
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
US7667588B2 (en) * 2004-09-27 2010-02-23 Siemens Industry, Inc. Cage telemetry module and system
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JP4904822B2 (ja) * 2006-01-16 2012-03-28 東京エレクトロン株式会社 温度測定機能を有する装置
US7555948B2 (en) 2006-05-01 2009-07-07 Lynn Karl Wiese Process condition measuring device with shielding
US7540188B2 (en) 2006-05-01 2009-06-02 Lynn Karl Wiese Process condition measuring device with shielding
JP2008139067A (ja) * 2006-11-30 2008-06-19 Dainippon Screen Mfg Co Ltd 温度測定用基板および温度測定システム
US8104342B2 (en) 2007-02-23 2012-01-31 Kla-Tencor Corporation Process condition measuring device
WO2009116383A1 (ja) * 2008-03-17 2009-09-24 東京エレクトロン株式会社 制御装置及び制御方法
US20100151127A1 (en) * 2008-12-12 2010-06-17 Applied Materials, Inc. Apparatus and method for preventing process system contamination
US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8538572B2 (en) * 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8676537B2 (en) * 2009-08-07 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Portable wireless sensor
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US8681493B2 (en) 2011-05-10 2014-03-25 Kla-Tencor Corporation Heat shield module for substrate-like metrology device
KR101899784B1 (ko) * 2011-09-01 2018-09-21 세메스 주식회사 공정 챔버 모니터링 장치 및 방법
KR101334384B1 (ko) 2012-08-31 2013-11-29 한국생산기술연구원 공정챔버 내부의 공정가스 분석 장치
JP5596832B2 (ja) * 2013-07-29 2014-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法のＲｕｎ−ｔｏ−Ｒｕｎ制御方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US10083883B2 (en) * 2016-06-20 2018-09-25 Applied Materials, Inc. Wafer processing equipment having capacitive micro sensors
US11468590B2 (en) * 2018-04-24 2022-10-11 Cyberoptics Corporation Wireless substrate-like teaching sensor for semiconductor processing
KR102026733B1 (ko) * 2018-05-11 2019-09-30 엘지전자 주식회사 플라즈마 공정 측정 센서 및 그 제조 방법
JP7341237B2 (ja) * 2018-12-03 2023-09-08 ラム リサーチ コーポレーション ピンリフター試験基板
CN111323076A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 检测装置及工艺腔室检测方法
KR102677514B1 (ko) * 2019-05-22 2024-06-21 삼성전자주식회사 압력 측정 장치
KR102769839B1 (ko) * 2019-09-09 2025-02-20 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US12009235B2 (en) 2020-12-01 2024-06-11 Applied Materials, Inc. In-chamber low-profile sensor assembly
JPWO2024005035A1 (enExample) * 2022-06-30 2024-01-04
KR20240115067A (ko) * 2023-01-18 2024-07-25 삼성전자주식회사 플라즈마 진단 장치 및 그것의 동작 방법

Citations (5)

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JPH03283608A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd 半導体基板
JPH0650824A (ja) * 1992-07-31 1994-02-25 Sony Corp 温度センサとその製法
JPH06163340A (ja) * 1992-11-26 1994-06-10 Seiko Epson Corp 情報計測手段を備えた被処理基板
JPH08213374A (ja) * 1994-10-31 1996-08-20 Applied Materials Inc 半導体ウエハ処理システムのための複合体診断ウエハ
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JPH03283608A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd 半導体基板
JPH0650824A (ja) * 1992-07-31 1994-02-25 Sony Corp 温度センサとその製法
JPH06163340A (ja) * 1992-11-26 1994-06-10 Seiko Epson Corp 情報計測手段を備えた被処理基板
JPH08213374A (ja) * 1994-10-31 1996-08-20 Applied Materials Inc 半導体ウエハ処理システムのための複合体診断ウエハ
JP2004507889A (ja) * 2000-08-22 2004-03-11 オンウエハー　テクノロジーズ　インコーポレーテッド 処理操作をおこなうため、効率的に利用するため、監視するため、及び制御するために、データを獲得する方法及び、その装置

Also Published As

Publication number Publication date
WO2000068986A1 (fr) 2000-11-16
KR100674624B1 (ko) 2007-01-25
KR20020010639A (ko) 2002-02-04
US6553277B1 (en) 2003-04-22
JP2011049566A (ja) 2011-03-10
JP5496834B2 (ja) 2014-05-21

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