KR100674624B1 - 센서기판, 기판처리방법 및 기판처리장치 - Google Patents

센서기판, 기판처리방법 및 기판처리장치 Download PDF

Info

Publication number
KR100674624B1
KR100674624B1 KR1020017014165A KR20017014165A KR100674624B1 KR 100674624 B1 KR100674624 B1 KR 100674624B1 KR 1020017014165 A KR1020017014165 A KR 1020017014165A KR 20017014165 A KR20017014165 A KR 20017014165A KR 100674624 B1 KR100674624 B1 KR 100674624B1
Authority
KR
South Korea
Prior art keywords
substrate
processed
sensor substrate
information
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020017014165A
Other languages
English (en)
Korean (ko)
Other versions
KR20020010639A (ko
Inventor
쇼지 야기사와
히로미츠 간바라
히로시 니시가와
다카시 이토
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20020010639A publication Critical patent/KR20020010639A/ko
Application granted granted Critical
Publication of KR100674624B1 publication Critical patent/KR100674624B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
KR1020017014165A 1999-05-07 2000-05-02 센서기판, 기판처리방법 및 기판처리장치 Expired - Fee Related KR100674624B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12695299 1999-05-07
JPJP-P-1999-00126952 1999-05-07

Publications (2)

Publication Number Publication Date
KR20020010639A KR20020010639A (ko) 2002-02-04
KR100674624B1 true KR100674624B1 (ko) 2007-01-25

Family

ID=14947967

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017014165A Expired - Fee Related KR100674624B1 (ko) 1999-05-07 2000-05-02 센서기판, 기판처리방법 및 기판처리장치

Country Status (4)

Country Link
US (1) US6553277B1 (enExample)
JP (2) JP4776783B2 (enExample)
KR (1) KR100674624B1 (enExample)
WO (1) WO2000068986A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282889B2 (en) * 2001-04-19 2007-10-16 Onwafer Technologies, Inc. Maintenance unit for a sensor apparatus
US7960670B2 (en) 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US6889568B2 (en) * 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
KR100465877B1 (ko) * 2002-08-23 2005-01-13 삼성전자주식회사 반도체 식각 장치
JP3916549B2 (ja) * 2002-10-31 2007-05-16 東京エレクトロン株式会社 プロセスモニタ及び半導体製造装置
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7135852B2 (en) 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US7151366B2 (en) * 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
DE10314150A1 (de) * 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
US7403834B2 (en) * 2003-05-08 2008-07-22 Regents Of The University Of California Methods of and apparatuses for controlling process profiles
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
US7363195B2 (en) * 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
US7667588B2 (en) * 2004-09-27 2010-02-23 Siemens Industry, Inc. Cage telemetry module and system
US20060234398A1 (en) * 2005-04-15 2006-10-19 International Business Machines Corporation Single ic-chip design on wafer with an embedded sensor utilizing rf capabilities to enable real-time data transmission
US8604361B2 (en) 2005-12-13 2013-12-10 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
JP2007178253A (ja) * 2005-12-28 2007-07-12 Tokyo Electron Ltd 温度測定装置および温度測定方法
JP4904822B2 (ja) * 2006-01-16 2012-03-28 東京エレクトロン株式会社 温度測定機能を有する装置
US7555948B2 (en) * 2006-05-01 2009-07-07 Lynn Karl Wiese Process condition measuring device with shielding
US7540188B2 (en) 2006-05-01 2009-06-02 Lynn Karl Wiese Process condition measuring device with shielding
JP2008139067A (ja) * 2006-11-30 2008-06-19 Dainippon Screen Mfg Co Ltd 温度測定用基板および温度測定システム
WO2008103700A2 (en) 2007-02-23 2008-08-28 Kla-Tencor Corporation Process condition measuring device
EP2267766A4 (en) * 2008-03-17 2013-04-24 Tokyo Electron Ltd CONTROL DEVICE AND CONTROL METHOD
US20100151127A1 (en) * 2008-12-12 2010-06-17 Applied Materials, Inc. Apparatus and method for preventing process system contamination
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8538572B2 (en) * 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US8676537B2 (en) * 2009-08-07 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Portable wireless sensor
US8681493B2 (en) 2011-05-10 2014-03-25 Kla-Tencor Corporation Heat shield module for substrate-like metrology device
KR101899784B1 (ko) * 2011-09-01 2018-09-21 세메스 주식회사 공정 챔버 모니터링 장치 및 방법
KR101334384B1 (ko) 2012-08-31 2013-11-29 한국생산기술연구원 공정챔버 내부의 공정가스 분석 장치
JP5596832B2 (ja) * 2013-07-29 2014-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法のＲｕｎ−ｔｏ−Ｒｕｎ制御方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US10083883B2 (en) * 2016-06-20 2018-09-25 Applied Materials, Inc. Wafer processing equipment having capacitive micro sensors
US11468590B2 (en) * 2018-04-24 2022-10-11 Cyberoptics Corporation Wireless substrate-like teaching sensor for semiconductor processing
KR102026733B1 (ko) * 2018-05-11 2019-09-30 엘지전자 주식회사 플라즈마 공정 측정 센서 및 그 제조 방법
WO2020117201A1 (en) * 2018-12-03 2020-06-11 Lam Research Corporation Pin-lifter test substrate
CN111323076A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 检测装置及工艺腔室检测方法
KR102677514B1 (ko) * 2019-05-22 2024-06-21 삼성전자주식회사 압력 측정 장치
KR102769839B1 (ko) * 2019-09-09 2025-02-20 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US12009235B2 (en) 2020-12-01 2024-06-11 Applied Materials, Inc. In-chamber low-profile sensor assembly
CN119487618A (zh) * 2022-06-30 2025-02-18 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
KR20240115067A (ko) * 2023-01-18 2024-07-25 삼성전자주식회사 플라즈마 진단 장치 및 그것의 동작 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163340A (ja) * 1992-11-26 1994-06-10 Seiko Epson Corp 情報計測手段を備えた被処理基板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371630A (ja) 1989-08-10 1991-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH03283608A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd 半導体基板
JPH05335284A (ja) * 1992-06-03 1993-12-17 Sony Corp 温度測定装置とこれを用いた温度測定方法
JPH0676193A (ja) 1992-06-10 1994-03-18 Seiko Epson Corp 真空チャンバー内の情報計測方法およびその装置
JP3178098B2 (ja) 1992-07-31 2001-06-18 ソニー株式会社 温度センサとその製法
JPH0712667A (ja) 1993-06-29 1995-01-17 Hitachi Ltd 物理量センサおよび物理量センサシステム
US5466614A (en) 1993-09-20 1995-11-14 At&T Global Information Solutions Company Structure and method for remotely measuring process data
US5444637A (en) * 1993-09-28 1995-08-22 Advanced Micro Devices, Inc. Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed
KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
JPH08306665A (ja) * 1995-04-28 1996-11-22 Ricoh Co Ltd 真空装置内における物理量測定装置
JP3249911B2 (ja) 1996-01-08 2002-01-28 東京エレクトロン株式会社 温度測定装置、処理装置及び処理方法
JP3396015B2 (ja) * 1996-08-30 2003-04-14 東京エレクトロン株式会社 イオンエネルギー測定方法及び装置、及びそれを利用したプラズマ処理装置
JP3798491B2 (ja) 1997-01-08 2006-07-19 東京エレクトロン株式会社 ドライエッチング方法
JP2000293829A (ja) * 1999-02-02 2000-10-20 Hitachi Ltd 基板処理装置及び基板処理方法
US6691068B1 (en) * 2000-08-22 2004-02-10 Onwafer Technologies, Inc. Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163340A (ja) * 1992-11-26 1994-06-10 Seiko Epson Corp 情報計測手段を備えた被処理基板

Also Published As

Publication number Publication date
JP5496834B2 (ja) 2014-05-21
WO2000068986A1 (fr) 2000-11-16
JP2011049566A (ja) 2011-03-10
KR20020010639A (ko) 2002-02-04
US6553277B1 (en) 2003-04-22
JP4776783B2 (ja) 2011-09-21

Similar Documents

Publication Publication Date Title
KR100674624B1 (ko) 센서기판, 기판처리방법 및 기판처리장치
US4908095A (en) Etching device, and etching method
JPWO2000068986A1 (ja) 真空処理方法及び真空処理装置
KR100830070B1 (ko) 디척킹에 대한 음향 검출 및 그를 위한 장치
US20100083982A1 (en) Particle removal apparatus and method and plasma processing apparatus
KR102230509B1 (ko) 클리닝 방법 및 기판 처리 장치
JP2003282533A (ja) 処理装置及び処理方法
KR20230118995A (ko) 메인터넌스 장치, 진공 처리 시스템 및 메인터넌스 방법
JP4878188B2 (ja) 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
JP7580592B2 (ja) プラズマモニタシステム、プラズマモニタ方法およびモニタ装置
US20090223450A1 (en) Member of substrate processing apparatus and substrate processing apparatus
US20070116881A1 (en) Method for forming thin film and film-forming device
US20050146277A1 (en) Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system
JP3118497B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2003124198A (ja) プラズマ処理方法及びプラズマ処理装置
JPH09129611A (ja) エッチング方法
JP7546364B2 (ja) 基板処理方法、ガス流評価用基板及び基板処理装置
JPH0964021A (ja) プラズマ処理方法
KR20150116003A (ko) 기판 처리 장치, 기판 처리 설비, 그리고 기판 처리 방법
JP7689572B2 (ja) パーティクルモニタシステム、パーティクルモニタ方法およびモニタ装置
KR20200059201A (ko) 기판 가열 유닛
KR20200060701A (ko) 기판 가열 유닛
JPH04162448A (ja) 静電チャック装置を備えた真空処理装置
KR200385483Y1 (ko) 반도체 및 엘씨디 공정용 건식 입자 제거 시스템
KR102548766B1 (ko) 기판 처리 장치 및 발열 부재 제어 방법

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130111

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140107

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150105

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20151217

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20161221

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180120

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180120