JP5496834B2 - センサ基板 - Google Patents
センサ基板 Download PDFInfo
- Publication number
- JP5496834B2 JP5496834B2 JP2010198954A JP2010198954A JP5496834B2 JP 5496834 B2 JP5496834 B2 JP 5496834B2 JP 2010198954 A JP2010198954 A JP 2010198954A JP 2010198954 A JP2010198954 A JP 2010198954A JP 5496834 B2 JP5496834 B2 JP 5496834B2
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- processing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000012545 processing Methods 0.000 claims description 182
- 239000000758 substrate Substances 0.000 claims description 176
- 238000001514 detection method Methods 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 40
- 230000010365 information processing Effects 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 12
- 230000001133 acceleration Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 64
- 238000005530 etching Methods 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 17
- 238000003672 processing method Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000009529 body temperature measurement Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 238000007781 pre-processing Methods 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013144 data compression Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Calibration Of Command Recording Devices (AREA)
Description
Claims (6)
- 被処理基板が載置される載置部を備えた処理装置の当該載置部に載置されるセンサ基板であって、
前記載置部に載置される被処理基板と略同形同大に形成され、
複数のアスペクト比が設定された複数の微小穴と、各微小穴内に設けられ真空状態における微小孔形成処理の処理過程における情報を検出する検出素子と、この検出素子が検出した情報を処理する情報処理素子と、を有し、
前記検出素子は、パワー密度、Vdc、ΔVdc、赤外線強度、紫外線強度、可視領域光強度、温度、分子量、イオンカレント、加速度、歪み、変位及び音のいずれかを検出する素子からなる
ことを特徴とするセンサ基板。 - 前記処理装置は、プラズマ処理装置である
ことを特徴とする請求項1に記載のセンサ基板。 - 前記プラズマ処理装置は、プラズマエッチング処理装置である
ことを特徴とする請求項2に記載のセンサ基板。 - 前記被処理基板は、半導体ウエハまたはLCD用ガラス基板である
ことを特徴とする請求項1乃至3のいずれかに記載のセンサ基板。 - 前記情報処理素子は、前記検出素子が検出した情報を記憶する記憶素子を有する
ことを特徴とする請求項1乃至4のいずれかに記載のセンサ基板。 - 前記情報処理素子は、前記検出素子が検出した情報を無線でリアルタイムで真空処理装置に送信する送信素子を有する
ことを特徴とする請求項1乃至4のいずれかに記載のセンサ基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010198954A JP5496834B2 (ja) | 1999-05-07 | 2010-09-06 | センサ基板 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12695299 | 1999-05-07 | ||
JP1999126952 | 1999-05-07 | ||
JP2010198954A JP5496834B2 (ja) | 1999-05-07 | 2010-09-06 | センサ基板 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000617488A Division JP4776783B2 (ja) | 1999-05-07 | 2000-05-02 | 基板処理方法及び基板処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011049566A JP2011049566A (ja) | 2011-03-10 |
JP2011049566A5 JP2011049566A5 (ja) | 2011-04-21 |
JP5496834B2 true JP5496834B2 (ja) | 2014-05-21 |
Family
ID=14947967
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000617488A Expired - Lifetime JP4776783B2 (ja) | 1999-05-07 | 2000-05-02 | 基板処理方法及び基板処理装置 |
JP2010198954A Expired - Fee Related JP5496834B2 (ja) | 1999-05-07 | 2010-09-06 | センサ基板 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000617488A Expired - Lifetime JP4776783B2 (ja) | 1999-05-07 | 2000-05-02 | 基板処理方法及び基板処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6553277B1 (ja) |
JP (2) | JP4776783B2 (ja) |
KR (1) | KR100674624B1 (ja) |
WO (1) | WO2000068986A1 (ja) |
Families Citing this family (46)
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US7757574B2 (en) * | 2002-01-24 | 2010-07-20 | Kla-Tencor Corporation | Process condition sensing wafer and data analysis system |
US6889568B2 (en) * | 2002-01-24 | 2005-05-10 | Sensarray Corporation | Process condition sensing wafer and data analysis system |
KR100465877B1 (ko) * | 2002-08-23 | 2005-01-13 | 삼성전자주식회사 | 반도체 식각 장치 |
JP3916549B2 (ja) * | 2002-10-31 | 2007-05-16 | 東京エレクトロン株式会社 | プロセスモニタ及び半導体製造装置 |
US6807503B2 (en) * | 2002-11-04 | 2004-10-19 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
US7135852B2 (en) * | 2002-12-03 | 2006-11-14 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
US7151366B2 (en) * | 2002-12-03 | 2006-12-19 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
DE10314150A1 (de) * | 2003-03-28 | 2004-10-21 | Infineon Technologies Ag | Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer |
US7403834B2 (en) * | 2003-05-08 | 2008-07-22 | Regents Of The University Of California | Methods of and apparatuses for controlling process profiles |
JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US7415312B2 (en) | 2004-05-25 | 2008-08-19 | Barnett Jr James R | Process module tuning |
US7363195B2 (en) | 2004-07-07 | 2008-04-22 | Sensarray Corporation | Methods of configuring a sensor network |
US7667588B2 (en) * | 2004-09-27 | 2010-02-23 | Siemens Industry, Inc. | Cage telemetry module and system |
US20060234398A1 (en) * | 2005-04-15 | 2006-10-19 | International Business Machines Corporation | Single ic-chip design on wafer with an embedded sensor utilizing rf capabilities to enable real-time data transmission |
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US7555948B2 (en) | 2006-05-01 | 2009-07-07 | Lynn Karl Wiese | Process condition measuring device with shielding |
US7540188B2 (en) * | 2006-05-01 | 2009-06-02 | Lynn Karl Wiese | Process condition measuring device with shielding |
JP2008139067A (ja) * | 2006-11-30 | 2008-06-19 | Dainippon Screen Mfg Co Ltd | 温度測定用基板および温度測定システム |
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EP2267766A4 (en) * | 2008-03-17 | 2013-04-24 | Tokyo Electron Ltd | CONTROL DEVICE AND CONTROL METHOD |
US20100151127A1 (en) * | 2008-12-12 | 2010-06-17 | Applied Materials, Inc. | Apparatus and method for preventing process system contamination |
US8538572B2 (en) * | 2009-06-30 | 2013-09-17 | Lam Research Corporation | Methods for constructing an optimal endpoint algorithm |
US8983631B2 (en) * | 2009-06-30 | 2015-03-17 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8618807B2 (en) * | 2009-06-30 | 2013-12-31 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8473089B2 (en) * | 2009-06-30 | 2013-06-25 | Lam Research Corporation | Methods and apparatus for predictive preventive maintenance of processing chambers |
US8676537B2 (en) * | 2009-08-07 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Portable wireless sensor |
US8712571B2 (en) * | 2009-08-07 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for wireless transmission of diagnostic information |
US8681493B2 (en) | 2011-05-10 | 2014-03-25 | Kla-Tencor Corporation | Heat shield module for substrate-like metrology device |
KR101899784B1 (ko) * | 2011-09-01 | 2018-09-21 | 세메스 주식회사 | 공정 챔버 모니터링 장치 및 방법 |
KR101334384B1 (ko) | 2012-08-31 | 2013-11-29 | 한국생산기술연구원 | 공정챔버 내부의 공정가스 분석 장치 |
JP5596832B2 (ja) * | 2013-07-29 | 2014-09-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法のRun−to−Run制御方法 |
JP6383647B2 (ja) * | 2014-11-19 | 2018-08-29 | 東京エレクトロン株式会社 | 測定システムおよび測定方法 |
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US11468590B2 (en) * | 2018-04-24 | 2022-10-11 | Cyberoptics Corporation | Wireless substrate-like teaching sensor for semiconductor processing |
KR102026733B1 (ko) * | 2018-05-11 | 2019-09-30 | 엘지전자 주식회사 | 플라즈마 공정 측정 센서 및 그 제조 방법 |
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CN111323076A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 检测装置及工艺腔室检测方法 |
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-
2000
- 2000-05-02 US US09/959,764 patent/US6553277B1/en not_active Expired - Lifetime
- 2000-05-02 JP JP2000617488A patent/JP4776783B2/ja not_active Expired - Lifetime
- 2000-05-02 WO PCT/JP2000/002905 patent/WO2000068986A1/ja active IP Right Grant
- 2000-05-02 KR KR1020017014165A patent/KR100674624B1/ko not_active IP Right Cessation
-
2010
- 2010-09-06 JP JP2010198954A patent/JP5496834B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011049566A (ja) | 2011-03-10 |
WO2000068986A1 (en) | 2000-11-16 |
JP4776783B2 (ja) | 2011-09-21 |
KR20020010639A (ko) | 2002-02-04 |
US6553277B1 (en) | 2003-04-22 |
KR100674624B1 (ko) | 2007-01-25 |
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