JP2011003578A5 - - Google Patents

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Publication number
JP2011003578A5
JP2011003578A5 JP2009143133A JP2009143133A JP2011003578A5 JP 2011003578 A5 JP2011003578 A5 JP 2011003578A5 JP 2009143133 A JP2009143133 A JP 2009143133A JP 2009143133 A JP2009143133 A JP 2009143133A JP 2011003578 A5 JP2011003578 A5 JP 2011003578A5
Authority
JP
Japan
Prior art keywords
film
conductor
external terminal
insulating film
barrier conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009143133A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003578A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009143133A priority Critical patent/JP2011003578A/ja
Priority claimed from JP2009143133A external-priority patent/JP2011003578A/ja
Priority to TW099115842A priority patent/TW201115697A/zh
Priority to US12/794,739 priority patent/US20100314620A1/en
Priority to CN2010102052854A priority patent/CN101924089A/zh
Publication of JP2011003578A publication Critical patent/JP2011003578A/ja
Publication of JP2011003578A5 publication Critical patent/JP2011003578A5/ja
Pending legal-status Critical Current

Links

JP2009143133A 2009-06-16 2009-06-16 半導体装置 Pending JP2011003578A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009143133A JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置
TW099115842A TW201115697A (en) 2009-06-16 2010-05-18 Semiconductor device
US12/794,739 US20100314620A1 (en) 2009-06-16 2010-06-05 Semiconductor device
CN2010102052854A CN101924089A (zh) 2009-06-16 2010-06-13 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009143133A JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2011003578A JP2011003578A (ja) 2011-01-06
JP2011003578A5 true JP2011003578A5 (enExample) 2012-04-26

Family

ID=43305653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009143133A Pending JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置

Country Status (4)

Country Link
US (1) US20100314620A1 (enExample)
JP (1) JP2011003578A (enExample)
CN (1) CN101924089A (enExample)
TW (1) TW201115697A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8603909B2 (en) * 2009-11-05 2013-12-10 Globalfoundries Singapore Pte. Ltd. Integrated circuit packaging system with core region and bond pad and method of manufacture thereof
JP5772926B2 (ja) * 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
JP2016004877A (ja) * 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
US9620460B2 (en) 2014-07-02 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor chip, semiconductor package and fabricating method thereof
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6524730B2 (ja) * 2015-03-17 2019-06-05 セイコーエプソン株式会社 半導体装置
JP6538960B2 (ja) 2016-02-23 2019-07-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6649189B2 (ja) * 2016-06-27 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR102576062B1 (ko) * 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
KR102807501B1 (ko) * 2019-10-02 2025-05-16 삼성전자주식회사 두꺼운 금속층을 갖는 반도체 소자들
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2024042698A1 (enExample) * 2022-08-26 2024-02-29

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100550505B1 (ko) * 2001-03-01 2006-02-13 가부시끼가이샤 도시바 반도체 장치 및 반도체 장치의 제조 방법
JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
JP2003218114A (ja) * 2002-01-22 2003-07-31 Toshiba Corp 半導体装置及びその製造方法
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
JP4998262B2 (ja) * 2005-07-05 2012-08-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4639138B2 (ja) * 2005-10-28 2011-02-23 パナソニック株式会社 半導体装置
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
JP5027605B2 (ja) * 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5443827B2 (ja) * 2009-05-20 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置

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