JP2009194387A5 - - Google Patents

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Publication number
JP2009194387A5
JP2009194387A5 JP2009030236A JP2009030236A JP2009194387A5 JP 2009194387 A5 JP2009194387 A5 JP 2009194387A5 JP 2009030236 A JP2009030236 A JP 2009030236A JP 2009030236 A JP2009030236 A JP 2009030236A JP 2009194387 A5 JP2009194387 A5 JP 2009194387A5
Authority
JP
Japan
Prior art keywords
layer wiring
insulating film
image sensor
sensor according
isotropic etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009030236A
Other languages
English (en)
Japanese (ja)
Other versions
JP5714804B2 (ja
JP2009194387A (ja
Filing date
Publication date
Priority claimed from KR1020080014038A external-priority patent/KR101463609B1/ko
Application filed filed Critical
Publication of JP2009194387A publication Critical patent/JP2009194387A/ja
Publication of JP2009194387A5 publication Critical patent/JP2009194387A5/ja
Application granted granted Critical
Publication of JP5714804B2 publication Critical patent/JP5714804B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009030236A 2008-02-15 2009-02-12 イメージセンサ Expired - Fee Related JP5714804B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0014038 2008-02-15
KR1020080014038A KR101463609B1 (ko) 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2009194387A JP2009194387A (ja) 2009-08-27
JP2009194387A5 true JP2009194387A5 (enExample) 2012-02-02
JP5714804B2 JP5714804B2 (ja) 2015-05-07

Family

ID=40954316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009030236A Expired - Fee Related JP5714804B2 (ja) 2008-02-15 2009-02-12 イメージセンサ

Country Status (4)

Country Link
US (1) US8154097B2 (enExample)
JP (1) JP5714804B2 (enExample)
KR (1) KR101463609B1 (enExample)
CN (1) CN101510553B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5347999B2 (ja) * 2009-03-12 2013-11-20 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
KR20100108109A (ko) * 2009-03-27 2010-10-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR101647779B1 (ko) * 2009-09-09 2016-08-11 삼성전자 주식회사 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치
KR101621241B1 (ko) * 2009-10-07 2016-05-16 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8749007B1 (en) * 2011-01-26 2014-06-10 Maxim Integrated Products, Inc. Light sensor having transparent substrate and diffuser formed therein
JP2013084744A (ja) * 2011-10-07 2013-05-09 Sony Corp 固体撮像素子および電子機器
US8816462B2 (en) 2012-10-25 2014-08-26 Omnivision Technologies, Inc. Negatively charged layer to reduce image memory effect
US10840282B2 (en) 2015-10-21 2020-11-17 Ams Sensors Singapore Pte. Ltd. Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same
US11437418B2 (en) * 2016-02-29 2022-09-06 Sony Corporation Solid-state image pickup device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) * 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
KR100653691B1 (ko) * 2004-07-16 2006-12-04 삼성전자주식회사 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들
KR100717277B1 (ko) 2005-03-07 2007-05-15 삼성전자주식회사 이미지 센서 및 그 형성 방법
KR100687102B1 (ko) * 2005-03-30 2007-02-26 삼성전자주식회사 이미지 센서 및 그 제조 방법.
KR100672690B1 (ko) 2005-08-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100731128B1 (ko) * 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100660329B1 (ko) 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법

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