KR101463609B1 - 이미지 센서 및 그 제조 방법 - Google Patents

이미지 센서 및 그 제조 방법 Download PDF

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Publication number
KR101463609B1
KR101463609B1 KR1020080014038A KR20080014038A KR101463609B1 KR 101463609 B1 KR101463609 B1 KR 101463609B1 KR 1020080014038 A KR1020080014038 A KR 1020080014038A KR 20080014038 A KR20080014038 A KR 20080014038A KR 101463609 B1 KR101463609 B1 KR 101463609B1
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KR
South Korea
Prior art keywords
insulating film
sensor array
etch stop
film structure
array region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080014038A
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English (en)
Korean (ko)
Other versions
KR20090088635A (ko
Inventor
김홍기
이덕형
노현필
Original Assignee
삼성전자 주식회사
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Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1020080014038A priority Critical patent/KR101463609B1/ko
Priority to US12/266,856 priority patent/US8154097B2/en
Priority to JP2009030236A priority patent/JP5714804B2/ja
Priority to CN2009100063692A priority patent/CN101510553B/zh
Publication of KR20090088635A publication Critical patent/KR20090088635A/ko
Application granted granted Critical
Publication of KR101463609B1 publication Critical patent/KR101463609B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020080014038A 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법 Expired - Fee Related KR101463609B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020080014038A KR101463609B1 (ko) 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법
US12/266,856 US8154097B2 (en) 2008-02-15 2008-11-07 Image sensor and method of manufacturing the same
JP2009030236A JP5714804B2 (ja) 2008-02-15 2009-02-12 イメージセンサ
CN2009100063692A CN101510553B (zh) 2008-02-15 2009-02-16 图像传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080014038A KR101463609B1 (ko) 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20090088635A KR20090088635A (ko) 2009-08-20
KR101463609B1 true KR101463609B1 (ko) 2014-11-21

Family

ID=40954316

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080014038A Expired - Fee Related KR101463609B1 (ko) 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법

Country Status (4)

Country Link
US (1) US8154097B2 (enExample)
JP (1) JP5714804B2 (enExample)
KR (1) KR101463609B1 (enExample)
CN (1) CN101510553B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5347999B2 (ja) * 2009-03-12 2013-11-20 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
KR20100108109A (ko) * 2009-03-27 2010-10-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR101647779B1 (ko) * 2009-09-09 2016-08-11 삼성전자 주식회사 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치
KR101621241B1 (ko) * 2009-10-07 2016-05-16 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8749007B1 (en) * 2011-01-26 2014-06-10 Maxim Integrated Products, Inc. Light sensor having transparent substrate and diffuser formed therein
JP2013084744A (ja) * 2011-10-07 2013-05-09 Sony Corp 固体撮像素子および電子機器
US8816462B2 (en) 2012-10-25 2014-08-26 Omnivision Technologies, Inc. Negatively charged layer to reduce image memory effect
US10840282B2 (en) 2015-10-21 2020-11-17 Ams Sensors Singapore Pte. Ltd. Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same
US11437418B2 (en) * 2016-02-29 2022-09-06 Sony Corporation Solid-state image pickup device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) * 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2007180541A (ja) * 2005-12-28 2007-07-12 Dongbu Electronics Co Ltd Ｃｍｏｓイメージセンサの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653691B1 (ko) * 2004-07-16 2006-12-04 삼성전자주식회사 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들
KR100717277B1 (ko) 2005-03-07 2007-05-15 삼성전자주식회사 이미지 센서 및 그 형성 방법
KR100687102B1 (ko) * 2005-03-30 2007-02-26 삼성전자주식회사 이미지 센서 및 그 제조 방법.
KR100672690B1 (ko) 2005-08-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100660329B1 (ko) 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) * 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2007180541A (ja) * 2005-12-28 2007-07-12 Dongbu Electronics Co Ltd Ｃｍｏｓイメージセンサの製造方法

Also Published As

Publication number Publication date
CN101510553B (zh) 2013-02-13
CN101510553A (zh) 2009-08-19
US8154097B2 (en) 2012-04-10
US20090206432A1 (en) 2009-08-20
JP5714804B2 (ja) 2015-05-07
JP2009194387A (ja) 2009-08-27
KR20090088635A (ko) 2009-08-20

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