CN101510553B - 图像传感器及其制造方法 - Google Patents

图像传感器及其制造方法 Download PDF

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Publication number
CN101510553B
CN101510553B CN2009100063692A CN200910006369A CN101510553B CN 101510553 B CN101510553 B CN 101510553B CN 2009100063692 A CN2009100063692 A CN 2009100063692A CN 200910006369 A CN200910006369 A CN 200910006369A CN 101510553 B CN101510553 B CN 101510553B
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CN
China
Prior art keywords
insulating film
film structure
etch stop
layer
isotropic etch
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Expired - Fee Related
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CN2009100063692A
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English (en)
Chinese (zh)
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CN101510553A (zh
Inventor
金弘基
李德炯
卢铉弼
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN101510553A publication Critical patent/CN101510553A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2009100063692A 2008-02-15 2009-02-16 图像传感器及其制造方法 Expired - Fee Related CN101510553B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR14038/08 2008-02-15
KR1020080014038A KR101463609B1 (ko) 2008-02-15 2008-02-15 이미지 센서 및 그 제조 방법

Publications (2)

Publication Number Publication Date
CN101510553A CN101510553A (zh) 2009-08-19
CN101510553B true CN101510553B (zh) 2013-02-13

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Family Applications (1)

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CN2009100063692A Expired - Fee Related CN101510553B (zh) 2008-02-15 2009-02-16 图像传感器及其制造方法

Country Status (4)

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US (1) US8154097B2 (enExample)
JP (1) JP5714804B2 (enExample)
KR (1) KR101463609B1 (enExample)
CN (1) CN101510553B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5347999B2 (ja) * 2009-03-12 2013-11-20 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
KR20100108109A (ko) * 2009-03-27 2010-10-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR101647779B1 (ko) * 2009-09-09 2016-08-11 삼성전자 주식회사 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치
KR101621241B1 (ko) * 2009-10-07 2016-05-16 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8749007B1 (en) * 2011-01-26 2014-06-10 Maxim Integrated Products, Inc. Light sensor having transparent substrate and diffuser formed therein
JP2013084744A (ja) * 2011-10-07 2013-05-09 Sony Corp 固体撮像素子および電子機器
US8816462B2 (en) 2012-10-25 2014-08-26 Omnivision Technologies, Inc. Negatively charged layer to reduce image memory effect
US10840282B2 (en) 2015-10-21 2020-11-17 Ams Sensors Singapore Pte. Ltd. Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same
US11437418B2 (en) * 2016-02-29 2022-09-06 Sony Corporation Solid-state image pickup device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1722459A (zh) * 2004-07-16 2006-01-18 三星电子株式会社 图像传感器和制造其的方法
KR100660329B1 (ko) * 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) * 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
KR100717277B1 (ko) 2005-03-07 2007-05-15 삼성전자주식회사 이미지 센서 및 그 형성 방법
KR100687102B1 (ko) * 2005-03-30 2007-02-26 삼성전자주식회사 이미지 센서 및 그 제조 방법.
KR100672690B1 (ko) 2005-08-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100731128B1 (ko) * 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1722459A (zh) * 2004-07-16 2006-01-18 三星电子株式会社 图像传感器和制造其的方法
KR100660329B1 (ko) * 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법

Also Published As

Publication number Publication date
CN101510553A (zh) 2009-08-19
US8154097B2 (en) 2012-04-10
US20090206432A1 (en) 2009-08-20
KR101463609B1 (ko) 2014-11-21
JP5714804B2 (ja) 2015-05-07
JP2009194387A (ja) 2009-08-27
KR20090088635A (ko) 2009-08-20

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