JP2011003578A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011003578A
JP2011003578A JP2009143133A JP2009143133A JP2011003578A JP 2011003578 A JP2011003578 A JP 2011003578A JP 2009143133 A JP2009143133 A JP 2009143133A JP 2009143133 A JP2009143133 A JP 2009143133A JP 2011003578 A JP2011003578 A JP 2011003578A
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Japan
Prior art keywords
film
semiconductor device
wiring layer
conductor
barrier conductor
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JP2009143133A
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English (en)
Japanese (ja)
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JP2011003578A5 (enExample
Inventor
Kenji Furusawa
健志 古澤
Takao Kamoshima
隆夫 鴨島
Hiromoto Takewaka
博基 竹若
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009143133A priority Critical patent/JP2011003578A/ja
Priority to TW099115842A priority patent/TW201115697A/zh
Priority to US12/794,739 priority patent/US20100314620A1/en
Priority to CN2010102052854A priority patent/CN101924089A/zh
Publication of JP2011003578A publication Critical patent/JP2011003578A/ja
Publication of JP2011003578A5 publication Critical patent/JP2011003578A5/ja
Pending legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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US12/794,739 US20100314620A1 (en) 2009-06-16 2010-06-05 Semiconductor device
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JP2014146785A (ja) * 2013-01-07 2014-08-14 Denso Corp 半導体装置
JP2016174089A (ja) * 2015-03-17 2016-09-29 セイコーエプソン株式会社 半導体装置
JP2018006385A (ja) * 2016-06-27 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置
KR20180118604A (ko) * 2016-02-23 2018-10-31 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
WO2024042698A1 (ja) * 2022-08-26 2024-02-29 株式会社ソシオネクスト 半導体集積回路装置

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US8603909B2 (en) * 2009-11-05 2013-12-10 Globalfoundries Singapore Pte. Ltd. Integrated circuit packaging system with core region and bond pad and method of manufacture thereof
JP2016004877A (ja) * 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
US9620460B2 (en) 2014-07-02 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor chip, semiconductor package and fabricating method thereof
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR102576062B1 (ko) * 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
KR102807501B1 (ko) * 2019-10-02 2025-05-16 삼성전자주식회사 두꺼운 금속층을 갖는 반도체 소자들

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JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
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JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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JP2009076808A (ja) * 2007-09-25 2009-04-09 Panasonic Corp 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146785A (ja) * 2013-01-07 2014-08-14 Denso Corp 半導体装置
JP2016174089A (ja) * 2015-03-17 2016-09-29 セイコーエプソン株式会社 半導体装置
KR20180118604A (ko) * 2016-02-23 2018-10-31 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
KR102482774B1 (ko) * 2016-02-23 2023-01-02 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2018006385A (ja) * 2016-06-27 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
WO2024042698A1 (ja) * 2022-08-26 2024-02-29 株式会社ソシオネクスト 半導体集積回路装置

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