CN101924089A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101924089A
CN101924089A CN2010102052854A CN201010205285A CN101924089A CN 101924089 A CN101924089 A CN 101924089A CN 2010102052854 A CN2010102052854 A CN 2010102052854A CN 201010205285 A CN201010205285 A CN 201010205285A CN 101924089 A CN101924089 A CN 101924089A
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CN
China
Prior art keywords
film
barrier conductor
conductor
wiring layer
conductor film
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Pending
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CN2010102052854A
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English (en)
Chinese (zh)
Inventor
古泽健志
鸭岛隆夫
竹若博基
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN101924089A publication Critical patent/CN101924089A/zh
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CN2010102052854A 2009-06-16 2010-06-13 半导体器件 Pending CN101924089A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915399A (zh) * 2013-01-07 2014-07-09 株式会社电装 半导体器件
CN105322001A (zh) * 2014-06-16 2016-02-10 瑞萨电子株式会社 半导体器件和电子设备
CN108140577A (zh) * 2016-02-23 2018-06-08 瑞萨电子株式会社 半导体器件及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8603909B2 (en) * 2009-11-05 2013-12-10 Globalfoundries Singapore Pte. Ltd. Integrated circuit packaging system with core region and bond pad and method of manufacture thereof
US9620460B2 (en) 2014-07-02 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor chip, semiconductor package and fabricating method thereof
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6524730B2 (ja) * 2015-03-17 2019-06-05 セイコーエプソン株式会社 半導体装置
JP6649189B2 (ja) * 2016-06-27 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR102576062B1 (ko) * 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
KR102807501B1 (ko) * 2019-10-02 2025-05-16 삼성전자주식회사 두꺼운 금속층을 갖는 반도체 소자들
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2024042698A1 (enExample) * 2022-08-26 2024-02-29

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434510A (zh) * 2002-01-22 2003-08-06 株式会社东芝 半导体器件及其制造方法
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
US20090078935A1 (en) * 2007-09-25 2009-03-26 Masao Takahashi Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727593B2 (en) * 2001-03-01 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor device with improved bonding
JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
WO2007004295A1 (ja) * 2005-07-05 2007-01-11 Fujitsu Limited 半導体装置及びその製造方法
JP4639138B2 (ja) * 2005-10-28 2011-02-23 パナソニック株式会社 半導体装置
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5443827B2 (ja) * 2009-05-20 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434510A (zh) * 2002-01-22 2003-08-06 株式会社东芝 半导体器件及其制造方法
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
US20090078935A1 (en) * 2007-09-25 2009-03-26 Masao Takahashi Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915399A (zh) * 2013-01-07 2014-07-09 株式会社电装 半导体器件
CN103915399B (zh) * 2013-01-07 2017-10-17 株式会社电装 半导体器件
CN105322001A (zh) * 2014-06-16 2016-02-10 瑞萨电子株式会社 半导体器件和电子设备
CN108140577A (zh) * 2016-02-23 2018-06-08 瑞萨电子株式会社 半导体器件及其制造方法

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