TW201115697A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW201115697A
TW201115697A TW099115842A TW99115842A TW201115697A TW 201115697 A TW201115697 A TW 201115697A TW 099115842 A TW099115842 A TW 099115842A TW 99115842 A TW99115842 A TW 99115842A TW 201115697 A TW201115697 A TW 201115697A
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TW
Taiwan
Prior art keywords
conductor
film
wiring layer
layer
barrier
Prior art date
Application number
TW099115842A
Other languages
English (en)
Chinese (zh)
Inventor
Takeshi Furusawa
Takao Kamoshima
Hiroki Takewaka
Original Assignee
Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW201115697A publication Critical patent/TW201115697A/zh

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    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
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JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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JP6649189B2 (ja) * 2016-06-27 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
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