JP2010541119A5 - - Google Patents

Download PDF

Info

Publication number
JP2010541119A5
JP2010541119A5 JP2010526419A JP2010526419A JP2010541119A5 JP 2010541119 A5 JP2010541119 A5 JP 2010541119A5 JP 2010526419 A JP2010526419 A JP 2010526419A JP 2010526419 A JP2010526419 A JP 2010526419A JP 2010541119 A5 JP2010541119 A5 JP 2010541119A5
Authority
JP
Japan
Prior art keywords
cell
reading
neighboring
memory
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010526419A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010541119A (ja
JP5475665B2 (ja
Filing date
Publication date
Priority claimed from US11/860,553 external-priority patent/US7751237B2/en
Application filed filed Critical
Publication of JP2010541119A publication Critical patent/JP2010541119A/ja
Publication of JP2010541119A5 publication Critical patent/JP2010541119A5/ja
Application granted granted Critical
Publication of JP5475665B2 publication Critical patent/JP5475665B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010526419A 2007-09-25 2008-06-23 フラッシュメモリのクロスカップリング事後補正 Active JP5475665B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/860,553 2007-09-25
US11/860,553 US7751237B2 (en) 2007-09-25 2007-09-25 Post-facto correction for cross coupling in a flash memory
PCT/IL2008/000855 WO2009040784A1 (en) 2007-09-25 2008-06-23 Post-facto correction for cross coupling in a flash memory

Publications (3)

Publication Number Publication Date
JP2010541119A JP2010541119A (ja) 2010-12-24
JP2010541119A5 true JP2010541119A5 (enExample) 2011-08-11
JP5475665B2 JP5475665B2 (ja) 2014-04-16

Family

ID=39828999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526419A Active JP5475665B2 (ja) 2007-09-25 2008-06-23 フラッシュメモリのクロスカップリング事後補正

Country Status (6)

Country Link
US (3) US7751237B2 (enExample)
EP (1) EP2201572B1 (enExample)
JP (1) JP5475665B2 (enExample)
KR (1) KR101426063B1 (enExample)
TW (1) TWI463499B (enExample)
WO (1) WO2009040784A1 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090097673A (ko) * 2008-03-12 2009-09-16 삼성전자주식회사 연판정 값에 기반하여 메모리에 저장된 데이터를 검출하는장치
US8185787B1 (en) * 2008-04-09 2012-05-22 Link—A—Media Devices Corporation Blind and decision directed multi-level channel estimation
US8458563B2 (en) * 2008-06-23 2013-06-04 Ramot At Tel Aviv University Ltd. Reading a flash memory by joint decoding and cell voltage distribution tracking
US8464131B2 (en) * 2008-06-23 2013-06-11 Ramot At Tel Aviv University Ltd. Reading a flash memory by constrained decoding
US8406048B2 (en) * 2008-08-08 2013-03-26 Marvell World Trade Ltd. Accessing memory using fractional reference voltages
WO2010039866A1 (en) * 2008-09-30 2010-04-08 Lsi Corporation Methods and apparatus for soft data generation for memory devices
KR101484556B1 (ko) * 2008-10-28 2015-01-20 삼성전자주식회사 독출 보상 회로
US7995387B2 (en) * 2009-01-30 2011-08-09 Sandisk Il Ltd. System and method to read data subject to a disturb condition
US8374026B2 (en) * 2009-01-30 2013-02-12 Sandisk Il Ltd. System and method of reading data using a reliability measure
TWI412036B (zh) * 2009-07-22 2013-10-11 Silicon Motion Inc 資料讀取的方法及資料儲存裝置
KR101678909B1 (ko) * 2009-09-17 2016-11-23 삼성전자주식회사 플래시 메모리 시스템 및 그것의 소거 리프레쉬 방법
US7990767B2 (en) * 2009-12-30 2011-08-02 Sandisk Il Ltd. Flash memory system having cross-coupling compensation during read operation
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
KR101658619B1 (ko) * 2010-04-27 2016-09-23 에스케이하이닉스 주식회사 반도체 메모리 장치의 소거 방법
TWI455132B (zh) * 2010-06-23 2014-10-01 Phison Electronics Corp 資料讀取方法、控制電路與記憶體控制器
US8531888B2 (en) 2010-07-07 2013-09-10 Marvell World Trade Ltd. Determining optimal reference voltages for progressive reads in flash memory systems
US8627175B2 (en) 2010-09-27 2014-01-07 Seagate Technology Llc Opportunistic decoding in memory systems
US8243511B2 (en) 2010-09-27 2012-08-14 Seagate Technology Llc Reuse of information from memory read operations
US8879317B2 (en) 2011-03-01 2014-11-04 Sandisk Technologies Inc. System and method of decoding data from memory based on sensing information and decoded data of neighboring storage elements
US9076547B2 (en) 2012-04-05 2015-07-07 Micron Technology, Inc. Level compensation in multilevel memory
US9030870B2 (en) 2011-08-26 2015-05-12 Micron Technology, Inc. Threshold voltage compensation in a multilevel memory
KR101919902B1 (ko) 2011-10-18 2018-11-20 삼성전자 주식회사 메모리 장치의 데이터 독출 방법
US8693257B2 (en) 2011-10-18 2014-04-08 Seagate Technology Llc Determining optimal read reference and programming voltages for non-volatile memory using mutual information
US8737133B2 (en) 2011-10-18 2014-05-27 Seagate Technology Llc Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
US8760932B2 (en) 2011-10-18 2014-06-24 Seagate Technology Llc Determination of memory read reference and programming voltages
US8711619B2 (en) 2011-10-18 2014-04-29 Seagate Technology Llc Categorizing bit errors of solid-state, non-volatile memory
US8913437B2 (en) * 2011-12-15 2014-12-16 Marvell World Trade Ltd. Inter-cell interference cancellation
US8811076B2 (en) 2012-07-30 2014-08-19 Sandisk Technologies Inc. Systems and methods of updating read voltages
US8874992B2 (en) * 2012-08-31 2014-10-28 Sandisk Technologies Inc. Systems and methods to initiate updating of reference voltages
US9355716B2 (en) 2013-01-17 2016-05-31 University Of Hawaii Memory channel detector systems and methods
KR102089532B1 (ko) 2013-02-06 2020-03-16 삼성전자주식회사 메모리 컨트롤러, 메모리 시스템 및 메모리 시스템의 동작 방법
US9129711B2 (en) 2013-02-28 2015-09-08 Kabushiki Kaisha Toshiba Semiconductor memory device
US9135109B2 (en) 2013-03-11 2015-09-15 Seagate Technology Llc Determination of optimum threshold voltage to read data values in memory cells
US9147490B2 (en) * 2013-03-15 2015-09-29 Sandisk Technologies Inc. System and method of determining reading voltages of a data storage device
KR102114230B1 (ko) * 2013-10-07 2020-05-25 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
US9859925B2 (en) 2013-12-13 2018-01-02 Empire Technology Development Llc Low-complexity flash memory data-encoding techniques using simplified belief propagation
US9934867B2 (en) 2014-01-06 2018-04-03 Seagate Technology Llc Capacitance coupling parameter estimation in flash memories
KR102190241B1 (ko) 2014-07-31 2020-12-14 삼성전자주식회사 메모리 컨트롤러의 동작 방법 및 불휘발성 메모리 시스템
KR102318561B1 (ko) 2014-08-19 2021-11-01 삼성전자주식회사 스토리지 장치, 스토리지 장치의 동작 방법
US9406377B2 (en) 2014-12-08 2016-08-02 Sandisk Technologies Llc Rewritable multibit non-volatile memory with soft decode optimization
US10204043B2 (en) 2016-03-08 2019-02-12 Toshiba Memory Corporation Memory controller, method of controlling nonvolatile memory and memory system
US9761308B1 (en) * 2016-03-11 2017-09-12 Western Digital Technologies, Inc. Systems and methods for adaptive read level adjustment
WO2020170041A1 (en) * 2019-02-20 2020-08-27 Marvell Asia Pte, Ltd. Decoding of high-density memory cells in a solid-state drive
KR102776456B1 (ko) * 2020-07-06 2025-03-10 에스케이하이닉스 주식회사 메모리 장치의 인터피어런스 측정 방법
US11557350B2 (en) * 2020-10-16 2023-01-17 Western Digital Technologies, Inc. Dynamic read threshold calibration
US11393540B2 (en) * 2020-10-26 2022-07-19 Western Digital Technologies, Inc. Adjacent memory cell interference mitigation
US11342033B1 (en) 2020-12-28 2022-05-24 Sandisk Technologies Llc Look neighbor ahead for data recovery
US11854631B2 (en) 2021-08-19 2023-12-26 Kioxia Corporation System and method for dynamic compensation for multiple interference sources in non-volatile memory storage devices
US11513887B1 (en) 2021-08-23 2022-11-29 Apple Inc. Cancelation of cross-coupling interference among memory cells

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6295326B1 (en) 1999-03-08 2001-09-25 Bandspeed, Inc. Kalman filter based equalization for digital multicarrier communications systems
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6751766B2 (en) 2002-05-20 2004-06-15 Sandisk Corporation Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6829167B2 (en) 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
US7372731B2 (en) 2003-06-17 2008-05-13 Sandisk Il Ltd. Flash memories with adaptive reference voltages
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7221008B2 (en) 2003-10-06 2007-05-22 Sandisk Corporation Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
US7817469B2 (en) * 2004-07-26 2010-10-19 Sandisk Il Ltd. Drift compensation in a flash memory
US7348618B2 (en) 2005-03-30 2008-03-25 Intel Corporation Flash memory cell having reduced floating gate to floating gate coupling
US7196946B2 (en) 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7954037B2 (en) 2005-10-25 2011-05-31 Sandisk Il Ltd Method for recovering from errors in flash memory
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
WO2007132453A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Distortion estimation and cancellation in memory devices
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
US7423912B2 (en) * 2006-09-19 2008-09-09 Atmel Corporation SONOS memory array with improved read disturb characteristic
ITRM20070273A1 (it) * 2007-05-16 2008-11-17 Micron Technology Inc Lettura di celle di memoria non volatile a livello mutiplo.
KR100877103B1 (ko) * 2007-06-01 2009-01-07 주식회사 하이닉스반도체 리드 디스터브가 억제되도록 하는 플래시 메모리소자의리드 방법
US8374026B2 (en) * 2009-01-30 2013-02-12 Sandisk Il Ltd. System and method of reading data using a reliability measure
US8213255B2 (en) * 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information

Similar Documents

Publication Publication Date Title
JP2010541119A5 (enExample)
JP2011527071A5 (enExample)
Khaliq et al. Identification of hydrological trends in the presence of serial and cross correlations: A review of selected methods and their application to annual flow regimes of Canadian rivers
CN106407051B (zh) 一种检测慢盘的方法及装置
JP2014086128A5 (enExample)
JP2012504820A5 (enExample)
JP2011528456A5 (enExample)
Luan et al. Further development of efficient and accurate time integration schemes for meteorological models
JP2015219913A5 (enExample)
JP2010262625A5 (enExample)
CN105590649A (zh) 固态储存系统中的读取阈值校准
CN108022046A (zh) 一种电力系统数据质量评估方法、存储介质及设备
JP2013503392A5 (enExample)
JP2012026846A5 (enExample)
JP2009276967A (ja) 外れ値検出方法、外れ値検出装置およびプログラム
CN107016166A (zh) 一种基于模态应变能的新型结构刚度损伤定位方法
CN112715322B (zh) 一种农业灌溉用水获取方法和装置
CN114722645B (zh) 影响径流变化的因素贡献率获取方法、系统、介质和设备
Wang et al. Modelling water and energy fluxes with an explicit representation of irrigation under mulch in a maize field
CN106685749B (zh) 网络流量的检验方法和装置
CN104794360B (zh) 航天器的在轨自主状态评估系统及其评估方法
RU2017138867A (ru) Способ и устройство для оценки количества микроорганизмов в таксономической единице в образце
CN119558100B (zh) 流域季节性径流量变化预测及归因方法、系统及介质
CN112598330A (zh) 基于遥感数据的天然草地恢复潜势估算方法
CN110990761B (zh) 水文模型参数率定方法、装置、计算机设备和存储介质