JP2010538479A5 - - Google Patents

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Publication number
JP2010538479A5
JP2010538479A5 JP2010523271A JP2010523271A JP2010538479A5 JP 2010538479 A5 JP2010538479 A5 JP 2010538479A5 JP 2010523271 A JP2010523271 A JP 2010523271A JP 2010523271 A JP2010523271 A JP 2010523271A JP 2010538479 A5 JP2010538479 A5 JP 2010538479A5
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JP
Japan
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layer
region
semiconductor component
electromagnetic beam
component according
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JP2010523271A
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English (en)
Japanese (ja)
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JP2010538479A (ja
JP5431329B2 (ja
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Priority claimed from DE102007041896A external-priority patent/DE102007041896A1/de
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Publication of JP2010538479A5 publication Critical patent/JP2010538479A5/ja
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Publication of JP5431329B2 publication Critical patent/JP5431329B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010523271A 2007-09-04 2008-08-29 半導体構成素子および半導体構成素子の製造方法 Expired - Fee Related JP5431329B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007041896A DE102007041896A1 (de) 2007-09-04 2007-09-04 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007041896.7 2007-09-04
PCT/DE2008/001449 WO2009030204A2 (de) 2007-09-04 2008-08-29 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements

Publications (3)

Publication Number Publication Date
JP2010538479A JP2010538479A (ja) 2010-12-09
JP2010538479A5 true JP2010538479A5 (enExample) 2011-07-14
JP5431329B2 JP5431329B2 (ja) 2014-03-05

Family

ID=40139376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010523271A Expired - Fee Related JP5431329B2 (ja) 2007-09-04 2008-08-29 半導体構成素子および半導体構成素子の製造方法

Country Status (7)

Country Link
US (1) US8384096B2 (enExample)
EP (1) EP2183779B1 (enExample)
JP (1) JP5431329B2 (enExample)
KR (1) KR20100080782A (enExample)
CN (1) CN101796638B (enExample)
DE (1) DE102007041896A1 (enExample)
WO (1) WO2009030204A2 (enExample)

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KR101998765B1 (ko) * 2013-03-25 2019-07-10 엘지이노텍 주식회사 발광소자 패키지
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WO2016009061A1 (en) * 2014-07-18 2016-01-21 Koninklijke Philips N.V. Led light source for automotive application
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CN105527770B (zh) * 2016-02-03 2019-03-05 京东方科技集团股份有限公司 一种显示装置
KR102006188B1 (ko) * 2017-12-29 2019-08-01 엘지전자 주식회사 반도체 발광 소자를 이용한 차량용 램프 및 그 제어방법
TWI692865B (zh) * 2018-11-21 2020-05-01 友達光電股份有限公司 顯示裝置
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN111916432B (zh) * 2019-05-08 2022-09-09 深圳第三代半导体研究院 一种均匀发光的正装集成单元二极管芯片
DE102019216924A1 (de) 2019-11-04 2021-05-06 Robert Bosch Gmbh Laseremitteranordnung sowie LiDAR-System
CN111081730B (zh) * 2019-12-13 2022-12-27 深圳第三代半导体研究院 Micro-LED芯片及其制造方法
US12113091B2 (en) * 2020-05-05 2024-10-08 Raysolve Optoelectronics (Suzhou) Company Limited Full color light emitting diode structure and method for manufacturing the same
DE102021120915A1 (de) 2021-08-11 2023-02-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung für eine Heckleuchte für ein Kraftfahrzeug und Verfahren zum Betreiben einer Anordnung für eine Heckleuchte für ein Kraftfahrzeug
TWI819863B (zh) * 2022-10-26 2023-10-21 友達光電股份有限公司 顯示面板

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