JP2008193086A5 - - Google Patents

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Publication number
JP2008193086A5
JP2008193086A5 JP2008020227A JP2008020227A JP2008193086A5 JP 2008193086 A5 JP2008193086 A5 JP 2008193086A5 JP 2008020227 A JP2008020227 A JP 2008020227A JP 2008020227 A JP2008020227 A JP 2008020227A JP 2008193086 A5 JP2008193086 A5 JP 2008193086A5
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JP
Japan
Prior art keywords
optically active
active layer
coupling member
semiconductor component
cooling medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008020227A
Other languages
English (en)
Japanese (ja)
Other versions
JP5209981B2 (ja
JP2008193086A (ja
Filing date
Publication date
Priority claimed from DE102007017113A external-priority patent/DE102007017113A1/de
Application filed filed Critical
Publication of JP2008193086A publication Critical patent/JP2008193086A/ja
Publication of JP2008193086A5 publication Critical patent/JP2008193086A5/ja
Application granted granted Critical
Publication of JP5209981B2 publication Critical patent/JP5209981B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008020227A 2007-01-31 2008-01-31 光学活性層を有する半導体構成素子、多数の光学活性層を有する装置および半導体構成素子の製造方法 Expired - Fee Related JP5209981B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007004805.1 2007-01-31
DE102007004805 2007-01-31
DE102007017113A DE102007017113A1 (de) 2007-01-31 2007-04-11 Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007017113.9 2007-04-11

Publications (3)

Publication Number Publication Date
JP2008193086A JP2008193086A (ja) 2008-08-21
JP2008193086A5 true JP2008193086A5 (enExample) 2011-06-23
JP5209981B2 JP5209981B2 (ja) 2013-06-12

Family

ID=39587421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008020227A Expired - Fee Related JP5209981B2 (ja) 2007-01-31 2008-01-31 光学活性層を有する半導体構成素子、多数の光学活性層を有する装置および半導体構成素子の製造方法

Country Status (3)

Country Link
US (1) US8564007B2 (enExample)
JP (1) JP5209981B2 (enExample)
DE (1) DE102007017113A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008008599A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
DE102008039147A1 (de) 2008-05-30 2009-12-03 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und optoelektronische Anordnung
US8008845B2 (en) * 2008-10-24 2011-08-30 Cree, Inc. Lighting device which includes one or more solid state light emitting device
EP2270882A1 (en) * 2009-06-30 2011-01-05 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
US20120206927A1 (en) * 2009-11-05 2012-08-16 Elm Inc. Large led lighting apparatus
CN101846256A (zh) * 2010-05-04 2010-09-29 蔡州 Led光源
US8179676B2 (en) 2010-07-21 2012-05-15 Telefonaktiebolaget L M Ericsson (Publ) Optical interconnects in cooling substrates
US8217557B2 (en) 2010-08-31 2012-07-10 Micron Technology, Inc. Solid state lights with thermosiphon liquid cooling structures and methods
TWI506813B (zh) * 2013-04-09 2015-11-01 東貝光電科技股份有限公司 Single crystal dual light source light emitting element
US10222540B2 (en) 2013-06-20 2019-03-05 Philips Lighting Holding B.V. Light emitting device
CN103996664B (zh) * 2014-05-30 2016-08-24 佐志温控技术（上海）有限公司 一种防反二极管的液体强制冷却装置
CN106287329A (zh) * 2015-06-04 2017-01-04 国立中央大学 液冷式高功率led投射灯
US20170030567A1 (en) * 2015-07-27 2017-02-02 Univ Nat Central Liquid-cool light emitting diodes light
JP6740654B2 (ja) * 2016-03-18 2020-08-19 日亜化学工業株式会社 光源装置
US10388810B1 (en) 2018-06-25 2019-08-20 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics assemblies having opticondistors and an embedded active cooling chip

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FR1519635A (fr) 1966-12-28 1968-04-05 Radiotechnique Coprim Rtc Perfectionnement aux dispositifs semi-conducteurs électroluminescents
US5836876A (en) * 1993-03-03 1998-11-17 Washington University Method and apparatus for determining bone density and diagnosing osteoporosis
FR2739983A1 (fr) * 1995-10-13 1997-04-18 Thomson Csf Semiconducteurs Laser a semiconducteur de forte puissance
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6480515B1 (en) * 2000-12-15 2002-11-12 Xerox Corporation Optically transparent, heat conductive fluid heat sink
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DE10239048B4 (de) * 2001-08-30 2006-11-16 Siemens Ag Integrierter Schaltkreis
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JP2004265986A (ja) 2003-02-28 2004-09-24 Citizen Electronics Co Ltd 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法
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JP2005294185A (ja) 2004-04-05 2005-10-20 Nichia Chem Ind Ltd 発光装置
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JP2007512690A (ja) 2003-11-28 2007-05-17 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ヒートシンクを備えた発光光電素子
JP2005243658A (ja) * 2003-12-25 2005-09-08 Ngk Spark Plug Co Ltd 発光ダイオードパッケージ
WO2005089477A2 (en) * 2004-03-18 2005-09-29 Phoseon Technology, Inc. Direct cooling of leds
DE102004047324A1 (de) * 2004-09-29 2006-04-13 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006237071A (ja) 2005-02-22 2006-09-07 Toyoda Gosei Co Ltd 発光素子およびこれを用いた表示装置
EP1703121A1 (en) 2005-02-24 2006-09-20 Siemens VDO Automotive S.p.A. Clip and fuel injector assembly
US7855449B2 (en) * 2005-04-27 2010-12-21 Koninklijke Philips Electronics N.V. Cooling device for a light-emitting semiconductor device and a method of manufacturing such a cooling device
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004301A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement

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