KR20100080782A - 반도체 소자 및 반도체 소자의 제조 방법 - Google Patents

반도체 소자 및 반도체 소자의 제조 방법 Download PDF

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Publication number
KR20100080782A
KR20100080782A KR1020107007280A KR20107007280A KR20100080782A KR 20100080782 A KR20100080782 A KR 20100080782A KR 1020107007280 A KR1020107007280 A KR 1020107007280A KR 20107007280 A KR20107007280 A KR 20107007280A KR 20100080782 A KR20100080782 A KR 20100080782A
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South Korea
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layer
region
optically active
electromagnetic radiation
disposed
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KR1020107007280A
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English (en)
Korean (ko)
Inventor
시그프레이드 허만
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100080782A publication Critical patent/KR20100080782A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
KR1020107007280A 2007-09-04 2008-08-29 반도체 소자 및 반도체 소자의 제조 방법 Withdrawn KR20100080782A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007041896.7 2007-09-04
DE102007041896A DE102007041896A1 (de) 2007-09-04 2007-09-04 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Publications (1)

Publication Number Publication Date
KR20100080782A true KR20100080782A (ko) 2010-07-12

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KR1020107007280A Withdrawn KR20100080782A (ko) 2007-09-04 2008-08-29 반도체 소자 및 반도체 소자의 제조 방법

Country Status (7)

Country Link
US (1) US8384096B2 (enExample)
EP (1) EP2183779B1 (enExample)
JP (1) JP5431329B2 (enExample)
KR (1) KR20100080782A (enExample)
CN (1) CN101796638B (enExample)
DE (1) DE102007041896A1 (enExample)
WO (1) WO2009030204A2 (enExample)

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CN111081730B (zh) * 2019-12-13 2022-12-27 深圳第三代半导体研究院 Micro-LED芯片及其制造方法
US12113091B2 (en) * 2020-05-05 2024-10-08 Raysolve Optoelectronics (Suzhou) Company Limited Full color light emitting diode structure and method for manufacturing the same
DE102021120915A1 (de) 2021-08-11 2023-02-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung für eine Heckleuchte für ein Kraftfahrzeug und Verfahren zum Betreiben einer Anordnung für eine Heckleuchte für ein Kraftfahrzeug
TWI819863B (zh) * 2022-10-26 2023-10-21 友達光電股份有限公司 顯示面板
JP2026502708A (ja) * 2023-01-30 2026-01-23 シグニファイ ホールディング ビー ヴィ Ｌｅｄフィラメント

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Also Published As

Publication number Publication date
EP2183779A2 (de) 2010-05-12
CN101796638A (zh) 2010-08-04
CN101796638B (zh) 2012-07-04
JP5431329B2 (ja) 2014-03-05
DE102007041896A1 (de) 2009-03-05
US20110101383A1 (en) 2011-05-05
WO2009030204A2 (de) 2009-03-12
EP2183779B1 (de) 2019-03-27
US8384096B2 (en) 2013-02-26
WO2009030204A3 (de) 2009-06-18
JP2010538479A (ja) 2010-12-09

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