JP2010536166A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2010536166A
JP2010536166A JP2010519358A JP2010519358A JP2010536166A JP 2010536166 A JP2010536166 A JP 2010536166A JP 2010519358 A JP2010519358 A JP 2010519358A JP 2010519358 A JP2010519358 A JP 2010519358A JP 2010536166 A JP2010536166 A JP 2010536166A
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Japan
Prior art keywords
cathode
anode
radiation
plasma
top surface
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JP2010519358A
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English (en)
Japanese (ja)
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JP2010536166A5 (https=
Inventor
イヴァノヴ，ブラディミア，ヴィタレヴィッチ
バニエ，バディム，エヴィジェンエビッチ
ブリーカー，アーノ，ジャン
コシェレブ，コンスタンチン，ニコラエビッチ
アンツィフェロヴ，パヴェル，スタニスラヴォヴィッチ
クリヴツン，ヴラディミア，ミハイロヴィッチ
ウィクトロウィッチ ロパエフ，ドミトリー
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2010536166A publication Critical patent/JP2010536166A/ja
Publication of JP2010536166A5 publication Critical patent/JP2010536166A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010519358A 2007-08-08 2008-07-28 リソグラフィ装置およびデバイス製造方法 Ceased JP2010536166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/889,065 US7872244B2 (en) 2007-08-08 2007-08-08 Lithographic apparatus and device manufacturing method
PCT/EP2008/006188 WO2009018933A1 (en) 2007-08-08 2008-07-28 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2010536166A true JP2010536166A (ja) 2010-11-25
JP2010536166A5 JP2010536166A5 (https=) 2011-09-15

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ID=39829007

Family Applications (1)

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JP2010519358A Ceased JP2010536166A (ja) 2007-08-08 2008-07-28 リソグラフィ装置およびデバイス製造方法

Country Status (7)

Country Link
US (1) US7872244B2 (https=)
EP (1) EP2177091A1 (https=)
JP (1) JP2010536166A (https=)
KR (1) KR20100063057A (https=)
CN (1) CN101690419B (https=)
NL (1) NL1035743A1 (https=)
WO (1) WO2009018933A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6084223B2 (ja) * 2011-09-02 2017-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 放射源

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
JP2001021697A (ja) * 1999-07-06 2001-01-26 Shimadzu Corp レーザープラズマｘ線源
JP2002043220A (ja) * 2000-05-19 2002-02-08 Canon Inc Ｘ線露光装置
JP2002124397A (ja) * 2000-07-03 2002-04-26 Asm Lithography Bv 放射線源、リソグラフィ装置、デバイス製造方法、およびそれによって製造したデバイス
WO2006059275A2 (en) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Method and apparatus for operating an electrical discharge device
JP2006517050A (ja) * 2002-10-15 2006-07-13 サイエンス リサーチ ラボラトリー インコーポレイテッド 高密度プラズマ焦点放射線源

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US4837794A (en) * 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4589123A (en) * 1985-02-27 1986-05-13 Maxwell Laboratories, Inc. System for generating soft X rays
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
JP4126096B2 (ja) 1997-01-29 2008-07-30 マイクロニック レーザー システムズ アクチボラゲット 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) * 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
US6408052B1 (en) * 2000-04-06 2002-06-18 Mcgeoch Malcolm W. Z-pinch plasma X-ray source using surface discharge preionization
US6647086B2 (en) 2000-05-19 2003-11-11 Canon Kabushiki Kaisha X-ray exposure apparatus
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
JP2002020860A (ja) * 2000-07-06 2002-01-23 Nissin Electric Co Ltd 真空アーク蒸発源およびそれを用いた膜形成装置
JP2002105628A (ja) * 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP4085593B2 (ja) * 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7075096B2 (en) * 2004-02-13 2006-07-11 Plex Llc Injection pinch discharge extreme ultraviolet source
DE102005025624B4 (de) * 2005-06-01 2010-03-18 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
JP2001021697A (ja) * 1999-07-06 2001-01-26 Shimadzu Corp レーザープラズマｘ線源
JP2002043220A (ja) * 2000-05-19 2002-02-08 Canon Inc Ｘ線露光装置
JP2002124397A (ja) * 2000-07-03 2002-04-26 Asm Lithography Bv 放射線源、リソグラフィ装置、デバイス製造方法、およびそれによって製造したデバイス
JP2006517050A (ja) * 2002-10-15 2006-07-13 サイエンス リサーチ ラボラトリー インコーポレイテッド 高密度プラズマ焦点放射線源
WO2006059275A2 (en) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Method and apparatus for operating an electrical discharge device
JP2008522379A (ja) * 2004-12-04 2008-06-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電気放電装置を動作させる方法及び機器

Also Published As

Publication number Publication date
CN101690419A (zh) 2010-03-31
US20090040492A1 (en) 2009-02-12
KR20100063057A (ko) 2010-06-10
CN101690419B (zh) 2013-06-05
EP2177091A1 (en) 2010-04-21
US7872244B2 (en) 2011-01-18
WO2009018933A1 (en) 2009-02-12
NL1035743A1 (nl) 2009-02-10

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