JP2010536166A5 - - Google Patents

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Publication number
JP2010536166A5
JP2010536166A5 JP2010519358A JP2010519358A JP2010536166A5 JP 2010536166 A5 JP2010536166 A5 JP 2010536166A5 JP 2010519358 A JP2010519358 A JP 2010519358A JP 2010519358 A JP2010519358 A JP 2010519358A JP 2010536166 A5 JP2010536166 A5 JP 2010536166A5
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JP
Japan
Prior art keywords
cathode
anode
radiation
radiation source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2010519358A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010536166A (ja
Filing date
Publication date
Priority claimed from US11/889,065 external-priority patent/US7872244B2/en
Application filed filed Critical
Publication of JP2010536166A publication Critical patent/JP2010536166A/ja
Publication of JP2010536166A5 publication Critical patent/JP2010536166A5/ja
Ceased legal-status Critical Current

Links

JP2010519358A 2007-08-08 2008-07-28 リソグラフィ装置およびデバイス製造方法 Ceased JP2010536166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/889,065 US7872244B2 (en) 2007-08-08 2007-08-08 Lithographic apparatus and device manufacturing method
PCT/EP2008/006188 WO2009018933A1 (en) 2007-08-08 2008-07-28 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2010536166A JP2010536166A (ja) 2010-11-25
JP2010536166A5 true JP2010536166A5 (https=) 2011-09-15

Family

ID=39829007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010519358A Ceased JP2010536166A (ja) 2007-08-08 2008-07-28 リソグラフィ装置およびデバイス製造方法

Country Status (7)

Country Link
US (1) US7872244B2 (https=)
EP (1) EP2177091A1 (https=)
JP (1) JP2010536166A (https=)
KR (1) KR20100063057A (https=)
CN (1) CN101690419B (https=)
NL (1) NL1035743A1 (https=)
WO (1) WO2009018933A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6084223B2 (ja) * 2011-09-02 2017-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 放射源

Family Cites Families (32)

* Cited by examiner, † Cited by third party
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JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
US4837794A (en) * 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4589123A (en) * 1985-02-27 1986-05-13 Maxwell Laboratories, Inc. System for generating soft X rays
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
JP4126096B2 (ja) 1997-01-29 2008-07-30 マイクロニック レーザー システムズ アクチボラゲット 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) * 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
JP2001021697A (ja) * 1999-07-06 2001-01-26 Shimadzu Corp レーザープラズマｘ線源
US6408052B1 (en) * 2000-04-06 2002-06-18 Mcgeoch Malcolm W. Z-pinch plasma X-ray source using surface discharge preionization
US6647086B2 (en) 2000-05-19 2003-11-11 Canon Kabushiki Kaisha X-ray exposure apparatus
JP2002043220A (ja) * 2000-05-19 2002-02-08 Canon Inc Ｘ線露光装置
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6667484B2 (en) * 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002020860A (ja) * 2000-07-06 2002-01-23 Nissin Electric Co Ltd 真空アーク蒸発源およびそれを用いた膜形成装置
JP2002105628A (ja) * 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP4085593B2 (ja) * 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7075096B2 (en) * 2004-02-13 2006-07-11 Plex Llc Injection pinch discharge extreme ultraviolet source
DE102004058500A1 (de) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
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US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
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US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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