CN101690419B - 光刻设备和器件制造方法 - Google Patents

光刻设备和器件制造方法 Download PDF

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Publication number
CN101690419B
CN101690419B CN200880024087.9A CN200880024087A CN101690419B CN 101690419 B CN101690419 B CN 101690419B CN 200880024087 A CN200880024087 A CN 200880024087A CN 101690419 B CN101690419 B CN 101690419B
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CN
China
Prior art keywords
anode
negative electrode
plasma
source
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880024087.9A
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English (en)
Chinese (zh)
Other versions
CN101690419A (zh
Inventor
V·V·伊万诺夫
V·Y·班尼恩
A·J·布里克
K·N·克什烈夫
P·S·安提斯弗诺夫
V·M·克里夫特逊
D·V·洛帕伊夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN101690419A publication Critical patent/CN101690419A/zh
Application granted granted Critical
Publication of CN101690419B publication Critical patent/CN101690419B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200880024087.9A 2007-08-08 2008-07-28 光刻设备和器件制造方法 Expired - Fee Related CN101690419B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/889,065 2007-08-08
US11/889,065 US7872244B2 (en) 2007-08-08 2007-08-08 Lithographic apparatus and device manufacturing method
PCT/EP2008/006188 WO2009018933A1 (en) 2007-08-08 2008-07-28 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
CN101690419A CN101690419A (zh) 2010-03-31
CN101690419B true CN101690419B (zh) 2013-06-05

Family

ID=39829007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880024087.9A Expired - Fee Related CN101690419B (zh) 2007-08-08 2008-07-28 光刻设备和器件制造方法

Country Status (7)

Country Link
US (1) US7872244B2 (https=)
EP (1) EP2177091A1 (https=)
JP (1) JP2010536166A (https=)
KR (1) KR20100063057A (https=)
CN (1) CN101690419B (https=)
NL (1) NL1035743A1 (https=)
WO (1) WO2009018933A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6084223B2 (ja) * 2011-09-02 2017-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 放射源

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* Cited by examiner, † Cited by third party
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JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
US4837794A (en) * 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4589123A (en) * 1985-02-27 1986-05-13 Maxwell Laboratories, Inc. System for generating soft X rays
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
JP4126096B2 (ja) 1997-01-29 2008-07-30 マイクロニック レーザー システムズ アクチボラゲット 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) * 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
JP2001021697A (ja) * 1999-07-06 2001-01-26 Shimadzu Corp レーザープラズマｘ線源
US6408052B1 (en) * 2000-04-06 2002-06-18 Mcgeoch Malcolm W. Z-pinch plasma X-ray source using surface discharge preionization
US6647086B2 (en) 2000-05-19 2003-11-11 Canon Kabushiki Kaisha X-ray exposure apparatus
JP2002043220A (ja) * 2000-05-19 2002-02-08 Canon Inc Ｘ線露光装置
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6667484B2 (en) * 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002020860A (ja) * 2000-07-06 2002-01-23 Nissin Electric Co Ltd 真空アーク蒸発源およびそれを用いた膜形成装置
JP2002105628A (ja) * 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP4085593B2 (ja) * 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7075096B2 (en) * 2004-02-13 2006-07-11 Plex Llc Injection pinch discharge extreme ultraviolet source
DE102004058500A1 (de) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
DE102005025624B4 (de) * 2005-06-01 2010-03-18 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
CN101690419A (zh) 2010-03-31
US20090040492A1 (en) 2009-02-12
JP2010536166A (ja) 2010-11-25
KR20100063057A (ko) 2010-06-10
EP2177091A1 (en) 2010-04-21
US7872244B2 (en) 2011-01-18
WO2009018933A1 (en) 2009-02-12
NL1035743A1 (nl) 2009-02-10

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Granted publication date: 20130605

Termination date: 20140728

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