JP4966342B2 - 放射源、放射を生成する方法およびリソグラフィ装置 - Google Patents
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
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- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
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- H—ELECTRICITY
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- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
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- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- G—PHYSICS
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- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
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- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
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- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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Description
Claims (12)
- 放射を生成するように構成された放射源であって、前記放射源は、
プラズマ生成部位へと誘導される燃料の小滴の流れを生成するように構成された燃料小滴ジェネレータと、
前記プラズマ生成部位へと誘導されるレーザビームを生成するように構成されたレーザと、
放射ビームと小滴とが衝突した場合にプラズマ形成部位で形成されたプラズマによって生成される放射を集光するように構成されたコレクタであって、前記コレクタは、前記放射を実質的に前記放射源の光軸に沿って反射させるように構成されている、コレクタとを含み、
前記レーザビームは、前記コレクタに設けられたアパーチャを通って前記プラズマ生成部位へと誘導され、
前記放射源は、前記レーザビームの方向および/または前記小滴の流れの動きの方向を制御するように構成され、前記小滴が前記レーザビームを通り抜けるためにかかる時間を増加させるように前記レーザビームと前記小滴の流れとの間の角度を制御して、これによって前記放射源により生成される放射の量を制御するコントローラをさらに含む、
放射源。 - 前記小滴の流れの動きの方向と前記レーザビームの方向との間の前記角度は、90°より小さい、
請求項1に記載の放射源。 - 前記コントローラは、前記レーザビームの方向と前記小滴の流れの動きの方向との間の前記角度を制御するために前記燃料小滴ジェネレータおよび/または前記レーザの位置または配向を制御するように構成されている、
請求項1又は2に記載の放射源。 - 前記小滴の流れは、前記小滴の流れが前記コレクタから離れる方向に向いている前記放射源の前記光軸に沿った動きの成分を有するように誘導される、
請求項1〜3のいずれか一項に記載の放射源。 - 前記レーザビームおよび前記小滴の流れは、前記レーザビームおよび前記小滴の流れが前記コレクタから離れる方向に向いている前記放射源の前記光軸に沿った動きの成分を有するように誘導される、
請求項1〜4のいずれか一項に記載の放射源。 - 前記小滴の流れの動きの方向と前記レーザビームの方向との間の前記角度は、85°より小さい、
請求項1〜5のいずれか一項に記載の放射源。 - 前記小滴の流れの動きの方向と前記レーザビームの方向との間の前記角度は、45°より小さい、
請求項1〜6のいずれか一項に記載の放射源。 - 前記レーザビームおよび前記小滴の流れは、前記コレクタに設けられたアパーチャを通って前記プラズマ生成部位へと誘導される、
請求項1〜7のいずれか一項に記載の放射源。 - 前記放射源は、EUV放射を生成するように構成されている、
請求項1〜8のいずれか一項に記載の放射源。 - 放射を生成する方法であって、
燃料の小滴の流れをプラズマ生成部位に誘導することと、
レーザビームを前記プラズマ生成部位に誘導することと、
放射ビームと小滴が衝突した場合にプラズマ形成部位で形成されたプラズマによって生成される放射を集光するためにコレクタを使用し、前記放射を実質的に前記放射源の光軸に沿って反射させることと、
を含み、
前記レーザビームは、前記コレクタに設けられたアパーチャを通って前記プラズマ生成部位へと誘導され、
コントローラが、前記レーザビームの方向および/または前記小滴の流れの動きの方向を制御して、前記小滴が前記レーザビームを通り抜けるためにかかる時間を増加させるように前記レーザビームと前記小滴の流れとの間の前記角度を制御し、これによって前記放射源により生成される放射の量を制御する、
方法。 - 前記小滴の流れと前記レーザビームの方向との間の角度は、90°より小さい、
請求項10に記載の方法。 - 請求項1〜9のいずれか一項に記載の放射源と、
パターニングデバイスを支持するように構成されたサポートであって、前記パターニングデバイスは、中間焦点を通り抜ける放射をパターン形成するように構成されている、サポートと、
前記パターン形成された放射を基板上に投影するように構成された投影システムと
を含む、
リソグラフィ装置。
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US13613408P | 2008-08-14 | 2008-08-14 | |
US61/136,134 | 2008-08-14 | ||
US19351008P | 2008-12-04 | 2008-12-04 | |
US61/193,510 | 2008-12-04 |
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JP2010045357A JP2010045357A (ja) | 2010-02-25 |
JP4966342B2 true JP4966342B2 (ja) | 2012-07-04 |
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US (1) | US8278636B2 (ja) |
EP (1) | EP2154574B1 (ja) |
JP (1) | JP4966342B2 (ja) |
AT (1) | ATE536567T1 (ja) |
Families Citing this family (12)
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FR2577677B1 (fr) * | 1985-02-15 | 1988-04-29 | Legrand Guy | Dispositif analyseur de la teneur en alcool d'un gaz |
US20110071802A1 (en) * | 2009-02-25 | 2011-03-24 | Ray Bojarski | Patient-adapted and improved articular implants, designs and related guide tools |
US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
JP5426317B2 (ja) * | 2008-10-23 | 2014-02-26 | ギガフォトン株式会社 | 極端紫外光光源装置 |
DE102011086565A1 (de) * | 2011-11-17 | 2012-11-15 | Carl Zeiss Smt Gmbh | Kollektor |
US9462667B2 (en) | 2012-02-08 | 2016-10-04 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
WO2013131706A1 (en) | 2012-03-07 | 2013-09-12 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
US9648714B2 (en) | 2012-03-27 | 2017-05-09 | Asml Netherlands B.V. | Fuel system for lithographic apparatus, EUV source, lithographic apparatus and fuel filtering method |
WO2015086232A1 (en) * | 2013-12-09 | 2015-06-18 | Asml Netherlands B.V. | Radiation source device, lithographic apparatus and device manufacturing method |
US9625824B2 (en) | 2015-04-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Extreme ultraviolet lithography collector contamination reduction |
US9826615B2 (en) * | 2015-09-22 | 2017-11-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV collector with orientation to avoid contamination |
WO2018172012A1 (en) * | 2017-03-20 | 2018-09-27 | Asml Netherlands B.V. | Lithographic system, euv radiation source, lithographic scanning apparatus and control system |
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US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
US6633048B2 (en) * | 2001-05-03 | 2003-10-14 | Northrop Grumman Corporation | High output extreme ultraviolet source |
JP4298336B2 (ja) * | 2002-04-26 | 2009-07-15 | キヤノン株式会社 | 露光装置、光源装置及びデバイス製造方法 |
DE10314849B3 (de) * | 2003-03-28 | 2004-12-30 | Xtreme Technologies Gmbh | Anordnung zur Stabilisierung der Strahlungsemission eines Plasmas |
FR2859545B1 (fr) * | 2003-09-05 | 2005-11-11 | Commissariat Energie Atomique | Procede et dispositif de lithographie par rayonnement dans l'extreme utraviolet |
DE102004005242B4 (de) | 2004-01-30 | 2006-04-20 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur plasmabasierten Erzeugung intensiver kurzwelliger Strahlung |
JP2005235959A (ja) * | 2004-02-18 | 2005-09-02 | Canon Inc | 光発生装置及び露光装置 |
JP2005294087A (ja) | 2004-04-01 | 2005-10-20 | Nikon Corp | 光源ユニット、照明光学装置、露光装置および露光方法 |
JP4574211B2 (ja) * | 2004-04-19 | 2010-11-04 | キヤノン株式会社 | 光源装置、当該光源装置を有する露光装置 |
JP4878108B2 (ja) * | 2004-07-14 | 2012-02-15 | キヤノン株式会社 | 露光装置、デバイス製造方法、および測定装置 |
JP4578901B2 (ja) * | 2004-09-09 | 2010-11-10 | 株式会社小松製作所 | 極端紫外光源装置 |
JP2006107933A (ja) * | 2004-10-06 | 2006-04-20 | Canon Inc | デブリ除去装置、及びそれを有するx線発生装置並びに露光装置 |
JP4937616B2 (ja) * | 2006-03-24 | 2012-05-23 | 株式会社小松製作所 | 極端紫外光源装置 |
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- 2009-07-14 AT AT09165403T patent/ATE536567T1/de active
- 2009-07-14 EP EP09165403A patent/EP2154574B1/en not_active Not-in-force
- 2009-08-07 JP JP2009183972A patent/JP4966342B2/ja active Active
- 2009-08-13 US US12/540,596 patent/US8278636B2/en active Active
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EP2154574A2 (en) | 2010-02-17 |
EP2154574B1 (en) | 2011-12-07 |
EP2154574A3 (en) | 2010-06-23 |
US20100039631A1 (en) | 2010-02-18 |
ATE536567T1 (de) | 2011-12-15 |
JP2010045357A (ja) | 2010-02-25 |
US8278636B2 (en) | 2012-10-02 |
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