ATE536567T1 - Strahlungsquelle und verfahren zur strahlungserzeugung - Google Patents

Strahlungsquelle und verfahren zur strahlungserzeugung

Info

Publication number
ATE536567T1
ATE536567T1 AT09165403T AT09165403T ATE536567T1 AT E536567 T1 ATE536567 T1 AT E536567T1 AT 09165403 T AT09165403 T AT 09165403T AT 09165403 T AT09165403 T AT 09165403T AT E536567 T1 ATE536567 T1 AT E536567T1
Authority
AT
Austria
Prior art keywords
radiation
radiation source
collector
directed
constructed
Prior art date
Application number
AT09165403T
Other languages
English (en)
Inventor
Erik Loopstra
Hendrikus Schimmel
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Application granted granted Critical
Publication of ATE536567T1 publication Critical patent/ATE536567T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Nozzles (AREA)
AT09165403T 2008-08-14 2009-07-14 Strahlungsquelle und verfahren zur strahlungserzeugung ATE536567T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13613408P 2008-08-14 2008-08-14
US19351008P 2008-12-04 2008-12-04

Publications (1)

Publication Number Publication Date
ATE536567T1 true ATE536567T1 (de) 2011-12-15

Family

ID=41361258

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09165403T ATE536567T1 (de) 2008-08-14 2009-07-14 Strahlungsquelle und verfahren zur strahlungserzeugung

Country Status (4)

Country Link
US (1) US8278636B2 (de)
EP (1) EP2154574B1 (de)
JP (1) JP4966342B2 (de)
AT (1) ATE536567T1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2577677B1 (fr) * 1985-02-15 1988-04-29 Legrand Guy Dispositif analyseur de la teneur en alcool d'un gaz
US20110071802A1 (en) * 2009-02-25 2011-03-24 Ray Bojarski Patient-adapted and improved articular implants, designs and related guide tools
US20100148221A1 (en) * 2008-11-13 2010-06-17 Zena Technologies, Inc. Vertical photogate (vpg) pixel structure with nanowires
JP5426317B2 (ja) * 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
DE102011086565A1 (de) * 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
US9462667B2 (en) 2012-02-08 2016-10-04 Asml Netherlands B.V. Radiation source and lithographic apparatus
CN104160337B (zh) * 2012-03-07 2016-05-18 Asml荷兰有限公司 辐射源与光刻设备
WO2013143733A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Fuel system for lithographic apparatus, euv source,lithographic apparatus and fuel filtering method
WO2015086232A1 (en) * 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
US9625824B2 (en) * 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
US9826615B2 (en) * 2015-09-22 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. EUV collector with orientation to avoid contamination
CN110462522B (zh) * 2017-03-20 2021-10-08 Asml荷兰有限公司 光刻系统、euv辐射源、光刻扫描设备和控制系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6633048B2 (en) * 2001-05-03 2003-10-14 Northrop Grumman Corporation High output extreme ultraviolet source
JP4298336B2 (ja) * 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
DE10314849B3 (de) * 2003-03-28 2004-12-30 Xtreme Technologies Gmbh Anordnung zur Stabilisierung der Strahlungsemission eines Plasmas
FR2859545B1 (fr) * 2003-09-05 2005-11-11 Commissariat Energie Atomique Procede et dispositif de lithographie par rayonnement dans l'extreme utraviolet
DE102004005242B4 (de) * 2004-01-30 2006-04-20 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur plasmabasierten Erzeugung intensiver kurzwelliger Strahlung
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
JP2005294087A (ja) * 2004-04-01 2005-10-20 Nikon Corp 光源ユニット、照明光学装置、露光装置および露光方法
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置
JP4878108B2 (ja) * 2004-07-14 2012-02-15 キヤノン株式会社 露光装置、デバイス製造方法、および測定装置
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
JP2006107933A (ja) * 2004-10-06 2006-04-20 Canon Inc デブリ除去装置、及びそれを有するｘ線発生装置並びに露光装置
JP4937616B2 (ja) * 2006-03-24 2012-05-23 株式会社小松製作所 極端紫外光源装置

Also Published As

Publication number Publication date
US8278636B2 (en) 2012-10-02
JP4966342B2 (ja) 2012-07-04
JP2010045357A (ja) 2010-02-25
EP2154574A3 (de) 2010-06-23
EP2154574A2 (de) 2010-02-17
EP2154574B1 (de) 2011-12-07
US20100039631A1 (en) 2010-02-18

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