JP2010534611A5 - - Google Patents

Download PDF

Info

Publication number
JP2010534611A5
JP2010534611A5 JP2010518413A JP2010518413A JP2010534611A5 JP 2010534611 A5 JP2010534611 A5 JP 2010534611A5 JP 2010518413 A JP2010518413 A JP 2010518413A JP 2010518413 A JP2010518413 A JP 2010518413A JP 2010534611 A5 JP2010534611 A5 JP 2010534611A5
Authority
JP
Japan
Prior art keywords
nitride
base substrate
island
semiconductor
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010518413A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010534611A (ja
JP4945725B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/071199 external-priority patent/WO2009015337A1/en
Publication of JP2010534611A publication Critical patent/JP2010534611A/ja
Publication of JP2010534611A5 publication Critical patent/JP2010534611A5/ja
Application granted granted Critical
Publication of JP4945725B2 publication Critical patent/JP4945725B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010518413A 2007-07-26 2008-07-25 改善されたエピタキシャル材料を製造するための方法 Active JP4945725B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US95213107P 2007-07-26 2007-07-26
US60/952,131 2007-07-26
US1721607P 2007-12-28 2007-12-28
US61/017,216 2007-12-28
PCT/US2008/071199 WO2009015337A1 (en) 2007-07-26 2008-07-25 Methods for producing improved epitaxial materials

Publications (3)

Publication Number Publication Date
JP2010534611A JP2010534611A (ja) 2010-11-11
JP2010534611A5 true JP2010534611A5 (OSRAM) 2011-09-08
JP4945725B2 JP4945725B2 (ja) 2012-06-06

Family

ID=39876857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010518413A Active JP4945725B2 (ja) 2007-07-26 2008-07-25 改善されたエピタキシャル材料を製造するための方法

Country Status (6)

Country Link
US (1) US7732306B2 (OSRAM)
EP (1) EP2171747B1 (OSRAM)
JP (1) JP4945725B2 (OSRAM)
KR (1) KR101355593B1 (OSRAM)
CN (1) CN101730926B (OSRAM)
WO (1) WO2009015337A1 (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP5903714B2 (ja) * 2007-07-26 2016-04-13 ソイテックＳｏｉｔｅｃ エピタキシャル方法およびこの方法によって成長させられたテンプレート
TW201013752A (en) * 2008-09-16 2010-04-01 Univ Nat Central Manufacturing method of single-crystalline substrate containing gallium nitride
US8329565B2 (en) * 2008-11-14 2012-12-11 Soitec Methods for improving the quality of structures comprising semiconductor materials
EP2364504B1 (en) * 2008-11-14 2019-08-28 Soitec Methods for improving the quality of structures comprising semiconductor materials
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
AU2010281317A1 (en) 2009-08-04 2012-02-23 Gan Systems Inc. Island matrixed gallium nitride microwave and power switching transistors
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US8791508B2 (en) 2010-04-13 2014-07-29 Gan Systems Inc. High density gallium nitride devices using island topology
US9287452B2 (en) 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
FR2968830B1 (fr) * 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN102842490B (zh) * 2012-08-17 2015-11-11 圆融光电科技有限公司 一种化合物半导体薄膜的自组装生长方法
CN103413758B (zh) * 2013-07-17 2017-02-08 华为技术有限公司 半导体鳍条的制作方法、FinFET器件的制作方法
US8916445B1 (en) 2013-08-16 2014-12-23 International Business Machines Corporation Semiconductor devices and methods of manufacture
KR102140789B1 (ko) 2014-02-17 2020-08-03 삼성전자주식회사 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
CN105019019B (zh) * 2014-04-30 2019-04-19 应用材料公司 用于选择性外延硅沟槽填充的方法
JP2015216311A (ja) * 2014-05-13 2015-12-03 株式会社ニューフレアテクノロジー 半導体基板、半導体基板の製造方法および半導体装置
WO2015198117A1 (en) 2014-06-26 2015-12-30 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials
CN106128948A (zh) * 2016-07-26 2016-11-16 中国科学院半导体研究所 在Si衬底上利用应变调制层减少GaN层穿透位错的结构及方法
WO2018169519A1 (en) * 2017-03-14 2018-09-20 Intel Corporation METHODS AND APPARATUS FOR COPLANAR GaN ISLANDS INCLUDING CONFINED EPITAXIAL LAYER
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
CN114929947A (zh) * 2020-01-16 2022-08-19 Slt科技公司 高质量第iii族金属氮化物晶种及其制备方法
US20230115980A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Masking layers in led structures
CN118326332A (zh) * 2024-04-16 2024-07-12 南京大学 一种降低AlN外延层缺陷的外延生长方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103604A (en) * 1997-02-10 2000-08-15 Trw Inc. High electron mobility transparent conductor
CN1159750C (zh) * 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US7118929B2 (en) * 2000-07-07 2006-10-10 Lumilog Process for producing an epitaxial layer of gallium nitride
DE60043122D1 (de) * 1999-03-17 2009-11-19 Mitsubishi Chem Corp Halbleiterbasis ihre Herstellung und Halbleiterkristallhersetllungsmethode
US6534332B2 (en) * 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
EP1346085B1 (en) 2000-11-30 2011-10-12 North Carolina State University Method for producing group iii metal nitride based materials
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
GB0111207D0 (en) * 2001-05-08 2001-06-27 Btg Int Ltd A method to produce germanium layers
US6784074B2 (en) * 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
DE10206751A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren zum Abscheiden von III-V-Halbleiterschichten auf einem Nicht -III-V-Substrat
JP2003282447A (ja) * 2002-03-20 2003-10-03 Fuji Photo Film Co Ltd 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
US7445673B2 (en) * 2004-05-18 2008-11-04 Lumilog Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
JP4236264B2 (ja) * 2004-08-04 2009-03-11 キヤノン株式会社 スケジュール管理システムと、スケジュール管理サーバ及びスケジュール管理方法
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
EP1681712A1 (en) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
TWI519686B (zh) * 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
US7459380B2 (en) * 2006-05-05 2008-12-02 Applied Materials, Inc. Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
KR100818452B1 (ko) * 2006-10-31 2008-04-01 삼성전기주식회사 Ⅲ족 질화물 반도체 박막 제조방법 및 이를 이용한 질화물반도체 소자 제조방법
US8236593B2 (en) 2007-05-14 2012-08-07 Soitec Methods for improving the quality of epitaxially-grown semiconductor materials

Similar Documents

Publication Publication Date Title
JP2010534611A5 (OSRAM)
CN102272891B (zh) 外延生长用内部改性衬底和使用其制造的晶体成膜体、器件、块状衬底以及它们的制造方法
JP5676004B2 (ja) 化合物半導体の製造方法
CN104485400B (zh) 一种iii‑v族氮化物的外延结构及其生长方法
US10014436B2 (en) Method for manufacturing a light emitting element
CN102593293A (zh) 模板、其制造方法以及制造半导体发光器件的方法
JP2013512567A5 (OSRAM)
JP2012109583A5 (OSRAM)
CN1533593A (zh) 用于生长氮化镓的基片、其制法和制备氮化镓基片的方法
US20120187445A1 (en) Template, method for manufacturing the template, and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
JP2015082662A (ja) 半導体バッファ構造体、それを含む半導体素子及び半導体バッファ構造体を利用した半導体素子の製造方法
TW201041016A (en) Substrate for growing group-iii nitride semiconductors, epitaxial substrate for group-iii nitride semiconductors, group-iii nitride semiconductor element, stand-alone substrate for group-iii nitride semiconductors, and methods for manufacturing the p
EP1883103A3 (en) Deposition of group III-nitrides on Ge
WO2017067333A1 (zh) 图形化衬底、制备方法及发光二极管
EP2112729A3 (en) Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser
CN102067336B (zh) 基于应力可调InGaAlN薄膜的发光器件
TW200937499A (en) Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
US10727054B2 (en) Nitride-based semiconductor device and method for preparing the same
WO2017041661A1 (zh) 一种半导体元件及其制备方法
CN108615798A (zh) 氮化物led外延层结构及制造方法
EP1724378A3 (en) Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal
CN105826438B (zh) 一种具有金属缓冲层的发光二极管及其制备方法
CN101740360A (zh) 一种提高镁在ⅲ-ⅴ族氮化物中掺杂效率的方法
CN102326228B (zh) 第ⅲ族氮化物半导体生长基板、第ⅲ族氮化物半导体外延基板、第ⅲ族氮化物半导体元件、第ⅲ族氮化物半导体自立基板及它们的制造方法
JP2012079722A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法