TW200937499A - Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor - Google Patents

Abstract

A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate (1), a mask (3) in which dotted or striped coating portions having a width or a diameter Ds from 10 μ m to 100μ m are arranged at an interval Dw from 250μ m to 2000μ m, growing a nitride semiconductor crystal (5) on the underlying substrate (1) with an HVPE method at a growth temperature from 1040 DEG C to 1150 DEG C by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R5/3 is set to 1 to 10 and a gas containing iron, and removing the underlying substrate (1), to thereby obtain a free-standing semi-insulating nitride semiconductor substrate (5s) having a specific resistance not smaller than 1x10<SP>5</SP>Ω cm and a thickness not smaller than 100μ m. Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semi-insulating nitride semiconductor substrate, a method of fabricating the same, a nitride semiconductor epitaxial substrate, and a field effect transistor. The term "nitride semiconductor" means gallium nitride (GaN), aluminum nitride (A1N), indium nitride (InN), and mixed crystals of InGaN or AlInGaN. The object is not a film attached to the base substrate, but is a separate crystal substrate. Here, GaN is mainly described. GaN has a wide band gap, so it can be used as a material for a blue light-emitting element.

A light-emitting element such as a blue light-emitting diode or a semiconductor laser can be produced by epitaxially growing a nitride semiconductor thin film crystal such as InGaN, GaN or AlInGaN on a sapphire (α-Α12〇3) single crystal substrate. Sapphire is the same as gallium nitride and is also a hexag〇nal system. A C-plane film of GaN is grown on the sapphire C-plane crystal. However, since the sapphire substrate is insulative and cannot form a pole from the bottom surface, and the cleavage surface of GaN is different from the cleavage surface of the sapphire substrate, it is difficult to save the name, that is, it is necessary to perform separation by the cutting machine, which is time consuming and troublesome, and The yield of wafer separation is poor. Also, the difference in lattice constant between gallium nitride (GaN) and sapphire is quite large. The GaN crystal grown on the sapphire substrate has a higher dislocation density. And = In order to use gallium nitride itself as a substrate, it is possible to make a substrate crystal. Gallium nitride has a wider band gap and is considered to be the preferred material for the component. In the case of the light-emitting element, the n-electrode can be formed smoothly on the bottom surface, and the conductivity is high. In the case of the top electrode, the substrate is desired. 135248.doc 200937499 The target of the manufacture of the nitride semiconductor substrate is also the growth of the n-type nitride semiconductor crystal having a high free electron density. Currently, a separate substrate of n-type GaN having a diameter of 2 inches can be fabricated. The present invention is not related to the growth of an n-type nitride semiconductor, but to the growth of a semi-insulating nitride semiconductor.

In addition to a wide band gap, GaN has good characteristics when used as an electronic component. For example, si is currently generally used as a material for a field effect transistor (FET). However, in terms of electron mobility or financial voltage characteristics, etc., GaN semiconductors are generally considered to be superior to 8 丨 semiconductors. The electron mobility of GaN is higher than that of Si, and the breakdown voltage is higher than Si. If the FET can be fabricated by GaN, an FET which is higher in speed, larger in current, and larger in voltage can be obtained. When a heterojunction such as AlGaN/GaN is formed, electrons are trapped at the bonding interface of AlGaN/GaN, and a two-dimensional electron gas that generates electrons in a two-dimensional knives generates a portion of the two-dimensional electron gas without scattering factors. Therefore, the two-dimensional electronic gas can move at high speed. The object of the present invention is to fabricate a nitride semiconductor crystal as a material of an FET and not as a material of the optical element as before. When an FET is fabricated using a GaN/AlGaN thin film, it is initially fabricated on a sapphire substrate. In the FET, the electrode of the gate, the gate, and the source is formed close to the conductor layer, and the current flows horizontally. The source, the gate, and the electrode of the electrode are also arranged on the upper surface. This point is different from the case where the current flows in the longitudinal direction of the light-emitting element in the substrate. In the case of the FET, there is no problem with the back n-electrode, so it may be an insulating sapphire substrate, but there is still a problem of lattice mismatch. Furthermore, there is also a problem of cost 135248.doc 200937499, and GaN-based FETs are far from practical. However, when fabricating a GaN-FET, in terms of lattice matching, it is preferable to use a sapphire substrate, preferably a GaN crystal substrate, and form an epitaxial film of GaN, AlGaN or the like thereon. And as a FET. Since it is a substrate of an FET, it is desirable to have a high conductivity n-type and a high-resistance semi-insulation. The properties required for the GaN crystal substrate for light-emitting elements hitherto are largely different. The present invention relates to a method of manufacturing a semi-insulating GaN substrate crystal which can be used as a FET φ substrate. The dopant is first described. Previously, for blue light-emitting elements, GaN or InGaN thin films were used. When it is required to be p-type, it is doped with Mg or doped with Zn. When it is necessary to become an n-type, Si is doped. The inventors of the present invention first discovered that in order to form an n-type GaN substrate, it is only necessary to dope oxygen. Thus, the n-type dopant is Si, 0. Thus, the problem is which dopant is used to make the GaN crystals semi-insulating and under what conditions. ® [Prior Art] When a nitride semiconductor-film (GaN, InGaN, AlGaN thin film, etc.) is formed on a sapphire substrate for the purpose of fabricating a light-emitting device, most of them are used. • MOCVD (Organic Metal Chemical Vapor Deposition, Metal Organic Chemical)

Vapor Deposition) method. Because of the vapor deposition method, the raw materials are supplied in the form of a gas. Nitrogen is supplied in the form of ammonia (NH3). The MOCVD method provides a Group III element in the form of an organic metal. An organometallic (trimethylgallium, triethylindium, etc.) of a third group element such as gallium or indium and NH3 are supplied as raw 135248.doc 200937499 to the heated sapphire substrate. When a GaN-based semiconductor thin film is formed by vapor deposition, HVPE (Hydride Vapor Phase, Hydride Vapor Phase) is also often used.

EpitaXy) method. In other words, a Ga wafer boat in which a Ga metal melt is placed is placed on the crystal holder, and HC1 is blown to synthesize GaCl, and this is used as a Ga raw material. Therefore, the material gases are GaCl and ammonia. Regarding the problem of the dopant, iron (Fe) is doped in order to make the GaN crystal semi-insulating. Iron (Fe) forms a deeper energy level in the band gap of the GaN crystal and captures the n-type carrier (free electrons), so the carrier is reduced. Therefore, the GaN crystal is semi-insulating. Since it is not completely insulative, it is called semi-insulating and has a high resistivity which does not affect the extent of the FET substrate. That is, the term "semi-insulating property" in the present invention means, for example, a specific resistance of 1 χ 10 Qcm or more. Since it is added to the inside of the nitride semiconductor grown by the gas phase, it is necessary to use a gas iron compound. For example, 'dicyclopentadienyl iron ((CsHshFe), and dimethylcyclopentadienyl iron ((CH3C5H4)2Fe), etc. are used. International Publication WO 99/23693 (hereinafter referred to as Patent Document 1) A method is disclosed in which a mask having an opening diameter of 1 to 5 and an opening pitch of 4 μm to 10 μm is attached to a GaAs substrate to form a GaN buffer layer, and GaN is formed by MOCVD at 820 ° C or 970 ° C. The crystal grows on the upper c-plane, or at 970 ° C, 1000 ° C, 1010 ° C, 1020 ° C, or 1 〇 3 〇. The GaN crystal is grown on the upper C surface by HVPE method, thereby obtaining Thick GaN crystal. Patent Document 1 uses a mask having a fine opening. Fig. 1 is a plan view showing an example of a mask 3 formed on a base substrate 1 of 135248.doc 200937499. On the mask 3, it is wider. The cover 4 (refers to the portion covered by the mask on the base substrate, the same applies hereinafter) has a plurality of smaller openings. The base substrate is exposed from the opening 3W. The area of the cover portion of the mask 3 is larger than the mask. The area of the opening (opening 3w) of 3. According to FIG. 2A to FIG. 2G, the crystallization process is reduced by the mask method. 2A to 2G are cross-sectional views showing a crystal growth step by a mask method. As shown in FIG. 2A, a mask 3 is formed on a base substrate to form a mask material, and regularly A small opening 3w is provided. As shown in Fig. 2B, if gallium argon is grown in vapor phase, gallium nitride crystal 5 is generated only in the opening 3w. The boundary between the crystal 5 and the base substrate 1 is a plurality of upwards. Dislocation 5t. If further grown, as shown in Fig. 2C, one portion of the crystal 5 on the opening 3w is grown onto the mask 3 and extends laterally on the mask 3. Since the crystal 5 grows laterally, the dislocation 5t is also lateral. The transverse plane becomes a facet 5f having a low surface index. As shown in Fig. 2D, the crystal 5 extends upward and laterally to form a conical ladder shape. The upper surface of the truncated cone is a C-plane 5c. As shown in Fig. 2E, The crystal 5 extending from one opening 3w is in contact with the crystal 5 extending from the adjacent opening 3w of the opening. The dislocations 5t, 5t of the two crystals 5, 5 extend laterally and collide with each other. The dislocations 5t and 5t cancel each other out. As shown in Fig. 2F, the groove of the facet 5f of the crystal 5 is filled. Soon, the concave portion formed by the facet 5 f is filled into a flat surface. The flat surface is the C surface 5c. Then the 'C surface 5c continues to grow as a surface. The position on the opening 3 w The error 5t is more 'and the dislocation 5t on the mask 3 is less. Patent Document 1 is an important prior art, in which the growth temperature and the raw material fraction 135248.doc -10- 200937499 pressure are specifically disclosed. Patent Literature丨The description of the growth temperature is as follows. In the case of the HVPE method, the growth temperature is 97 (rc, 1 〇〇〇t, 1010 ° C, 10 ° C ° C, or 1030 t. In the case of the MOCVD method, the growth temperature is 82 〇. 〇 or 970. (: In the HVPE method, 'the raw material is hc-bu-Ga melt, and NH3. The third-group raw material reacts the Ga melt with the hci gas to form the amount of the second-group raw material and the fifth-group raw material supplied by the Gac. It is expressed by the partial pressure of GaC1 and the partial pressure pNH3 of NH3. The ratio of the fifth group raw material to the third-group raw material Rs/3 ' can be divided by NH3, and the partial pressure of GaC1 The ratio is expressed as 'R5/3=PNH3/P (3ac丨. The specific resistance S of the GaN crystal formed by the mask method is in the range of S-0-005 ficm~0.08 Ωοιη. The growth conditions of the MOCVD method described in the examples of Patent Document 1 are as follows (growth temperature Tq, ΝΗ3 partial pressure Ρνη3, TMG (trimethyl gallium), partial pressure PTMG, fifth/third family The scale of 5/3) means 'then (970. (:, 20 kPa, 0.2 kPa, 100), (970 ° C, 25 kPa, 0.2 kPa, 100), (820.., 20 kPa, 0.3)kPa, 67), (970T:, 20 kPa, 0.2 kPa, 100), (1000%, 20 kPa, 0.4 kPa, 50), (970 〇C, 25 kPa, 0.5 kPa, 50). The growth conditions of the HVPE method described in the examples are represented by (growth temperature Tq, NH3 partial pressure pNH3, HC1 partial pressure PHC1, fifth group/third group ratio r5/3), then (97) 〇〇c, 25 kpa, 2 kPa, 12.5), (970 °C, 25 kPa, 2,5 kPa, 10), (97 (TC, 25 kPa, 0.5 kPa, 50), (1000.., 20 kPa) , 2 kPa, 10), (950〇C, 25 135248.doc 11 200937499 kPa, 2 kPa, 12.5), (1020 ° C, 25 kPa, 2 kPa, 12.5), (1000.., 25 kPa, 2 kPa) , 12.5), (loio, . 25 kPa, 2 kPa, 12.5), (1030 〇 C, 25 kPa, 2 kPa, 12.5) 〇 Patent No. 3780 037 (Japanese Patent Laid-Open No. 2000-012900, hereinafter referred to as Patent Document 2) provides an independent GaN substrate in which a mask having fine openings in a staggered manner is formed on a GaAs substrate, and a GaN crystal is thickened by maintaining a C-plane by an HVPE method. Growing and removing the GaAs substrate Obtained freestanding GaN substrate, the following: straight ❹ diameter of at least 20 mm, a thickness of more than 70 μπι, and when the bending diameter 5〇 converted to mm (warp) of 0.55 mm or less. In a 50 mm diameter wafer, the center bend (warp) is 0.55 mm, and if it is changed to the radius of curvature r, it is about 6 〇〇 mm = 0.6 m. According to Patent Document 2, when the HVPE method is used, the growth temperature Tq is set to 970 ° C, 102 CTC, or 103 (TC, GaCl partial pressure pGaC1 is set to i |^ or 2 kPa (0.01 to 0.02 atm), and NH3 partial pressure PNH3 In the case of Gaa partial pressure p (jaci is i kpa), the surface is flat but the warpage is large and the internal stress is large and fragile. Therefore, the crystal which cannot be used 'cannot form a film thickness of 7 〇 or more. Patent Document 2 has the following description. On the contrary, when the GaC1 partial pressure enthalpy (6) is set to 2 kPa, the surface is rough, but the surface is small, and the internal stress is small. Smaller crystals. NH3 partial pressure 1&gt; Xian 3 is 6 kPa, 12 kpa, or 24 kpa. The ratio of the fifth group to the third group Rw is 3, 6 or 12. The radius of curvature is about im. The specific resistance is 0.0035. 〜0.0083 Qcm. The above crystal is an n-type crystal. The growth conditions described in the examples of Patent Document 2 are (growth 135248.doc •12·200937499 temperature Tq, NH3 partial pressure PNH3, GaCl partial pressure PGaC1, The ratio of the five/third group R5/3) means 'then (l〇3〇C, 4 kPa, 1 kPa, 4), (1030 ° C, 6 kPa, 1) kPa, 6), (97〇t, 6 kPa, 2 kPa, 3), (970 °C, 6 kPa, 1 kPa, 6), (97 (TC, 6 kPa, 1 kPa, 6), (1020 Ό, 6 kPa, 2 kPa, 3), (1020X:, 6 kPa, 2 kPa, 3), (103CTC, 6 kPa, 1 kPa, 6), (970 °C, 6 kPa, 2 kPa, 3), (970) °C, 12 kPa, 2 kPa, 6), (97 〇 °c, 24 kPa, 2 kPa, 12). Patent No. 3788041 (Japanese Patent Laid-Open No. 2000-0222 12, hereinafter referred to as Patent Document 3) A method for fabricating a GaN independent single crystal substrate is proposed which is formed on a GaAs substrate by a mask having a dot-like opening which is spaced apart by a fixed interval in the [u_2] direction and which is offset by a half pitch in the [-1 10] direction. a mask, or a mask having strip openings extending in the [1 1-2] direction or a mask having strip openings extending in the [_11 0] direction, providing a buffer layer while being held by the HVPE method The C-plane of the GaN crystal is epitaxially grown, and the substrate and the mask are removed. Patent Document 3 is also a method as shown in Fig. ,, which is formed by arranging a plurality of layers on the base substrate 纵 at a small pitch. a small opening mask, GaN crystal vapor phase growth 'bits so as to reduce the crystal dislocation. The Gw partial pressure p (five) has two cases of 1 kPa (0.01 &amp; plus) and 2 kPa (0.02 atm). Patent Document 3 discloses that, in the case of 'Si heart, a crystal having a flat surface but a large internal stress and a large warpage and being brittle is generated, and in the case of 2 hearts, a surface roughness is generated. GaN crystal with less internal stress and less warpage and less brittleness; when the growth temperature is 1〇2旳 or 1〇3吖I35248.doc -13· 200937499, the surface is flat, the internal stress is large and fragile; When the growth temperature is 97 〇 (&gt;c and the partial pressure of GaCl is 2 kPa, when the crystal is thick, GaN crystals having a rough surface but less internal stress and less warpage are produced. The NH3 partial pressure Pnh3 is 6 kPa. In the case of ~12 kPa, in Patent Document 3, the temperature of the rough GaN crystal which is warped, has small internal stress and is not easily broken is 97〇〇c, the partial pressure of GaC1 is 2 kPa, and the partial pressure of NH3 is 6. ～12 kPa, a fifth-group/third-group scale, which is about 3 to 6. An η-type crystal having a specific resistance of 〇·01 to 〇〇17 ncm can be obtained. HVPE growth conditions, if (growth temperature Tq, ΝΗ3 partial pressure PNH3, GaCi partial pressure pGaa, fifth/third group ratio R5/3) '(1〇3〇°c, 4 kPa, 1 kPa, 4), (l〇30°C, 6 kPa, 1 kPa, 6), (970°C, 6 kPa, 2 kPa, 3) ), (970 ° C, 6 kPa, 1 kPa, 6), (970 ° C, 6 kPa, 1 kPa, 6), (102 (TC, 6 kPa, 2 kPa, 3), (l〇2 (TC) , 6 kPa, 2 kPa, 3), (1030 ° C, 6 kPa, 1 kPa, 6), (970 ° C, 6 kPa, 2 kPa, 3), (970 ° C, 12 kPa, 2 kPa, 6) ) (970 ° C, 24 kPa, 2 kPa &gt; 12) In the International Publication WO 98/471 70 manual (hereinafter referred to as Patent Document 4), the following description is made, that is, double and triple EL〇 a mask (Epitaxial Lateral 〇vergrowth 'transverse epitaxial overgrowth) is disposed in an alternately overlapping manner to reduce dislocations and crystallizes the Si-doped n-type GaN while maintaining the C-plane by MOCVD or HVPE; The ELO mask has a large dislocation density in the opening and a small dislocation density on the mask, so the double and triple ELO masks are attached in an interlaced manner to reduce the dislocation density 135248.doc 14 200937499 Degree; in the case of M〇CVD method, the ratio of the fifth/third group r5/3 is 30~2000 Preferably, in the embodiment, the ratio of In of the fifth group/third group is used as a material gas of a ratio of i2 〇〇, MU, 1800, 1500, 800, or 3 。. The ^^ method is not described. There is a description that the n-type dopant is Si; doping is performed using a silane (SiH4) gas; first, a trapezoidal crystal is formed by the m〇cvd method until it reaches the opening of the ELO mask, and is applied to the EL〇 mask. The upper part will be switched to 1^? ugly method; the better growth temperature is 95〇. (;: 〜1〇5〇1^. The EPC publication EP0942459 A1 (hereinafter referred to as Patent Document 5) is substantially the same as Patent Document 4, and proposes a scheme for reducing dislocations by a double or triple EL 〇 mask. In the specification of Japanese Patent No. 37881-4 (Japanese Patent Laid-Open Publication No. 2000-044400, hereinafter referred to as Patent Document 6), it is first proposed to dope n-type GaN by doping oxygen into an GaN as an n-type dopant. Method of substrate. Patent Documents 4 and 5 use decane (SiH4) gas and dope into the crystal as an n-type dopant. The decane gas has a possibility of explosion, and a large amount of decane is used for growing the n-type substrate. The gas system is extremely dangerous. Patent Document 6 found that oxygen forms a shallow donor energy level in GaN crystals; water is added to the material gases NH3, HC1, etc., and an EL〇 mask is placed on the GaAs substrate by the HVPE method. When the GaN crystal is grown, the c-plane growth is performed, but the donor energy level is formed by the oxygen incorporation in the raw material, and the n-type carrier is generated, so that the crystal becomes n-type; and the activation ratio is in a large concentration range. j 〇〇% ; and the first clear oxygen A thicker crystallization is a preferred η-type dopant. 135248.doc • 15-200937499, in the specification of Japanese Patent No. 3,826,825 (Japanese Patent Laid-Open Publication No. Hei No. 2-373864, hereinafter referred to as Patent Document 7) It is clear that the GaN crystal has a significant anisotropy when it is doped with oxygen. That is, it is difficult for oxygen to enter through the c-plane ((〇〇〇1) plane), but it is easy to enter through the surface other than the C-plane. Patent Document 7 The following method is proposed. As shown in Fig. 17, the average is grown in the e-axis direction ("〇〇〇1" direction), but a large number of non-C face facets 5f are formed on the surface, and oxygen is passed through the non-C plane. The GaN substrate having a non-C-face (hkmn) y (OO1) plane is used as the face 5 f to incorporate crystals, or as shown in FIG. 8 , and oxygen is doped from the non-c-plane surface. In Patent Document 7, the remarkable anisotropy of oxygen doping is first confirmed. The HVPE growth conditions described in the examples of Patent Document 7 are expressed as (growth temperature Tq, NH3 partial pressure PNH3, HC1 partial pressure PHC1, fifth group/third group ratio R5/3) (1020 ° C, 20 kPa, 1 kPa, 20). A new dislocation density reduction method which is completely different from the ELO method is disclosed in Japanese Laid-Open Patent Publication No. 2001-102307 (hereinafter referred to as Patent Document 8). In Patent Document 8, by appropriately controlling the growth conditions, a large number of facets 5 f and pits 5 p of a size formed by the facets are actively produced as shown in FIG. 3, and the facets 5f and pits 5p are maintained. Not buried until the end of growth. Because the facets are not buried until the end, it is called facet growth. The pit 5p is a hexagonal cone or a dip cone. Here, for the sake of simplicity, the pit of the hexagonal cone is shown. As shown in the perspective view of the pit 5p of FIG. 4 and the recessed surface 5p of FIG. 5, the concave portion (pit 5p) of the facet 5f is maintained on the right side, and while the crystal grows, the crystal will be engraved inside the pit 5p. The normal direction of the face 5f is grown up. Dislocation 51: extends along the growth direction 5v, so the dislocation 5t extends in the direction of the facet normal 135248.doc 16·200937499. The dislocation 5t is directed to the boundary line 5b by facet growth. A set of dislocations 5t is formed below the line b (the planar dislocation set crystal region 5pd). If the facet grows, the dislocations are concentrated toward the bottom of the pit 5p. A large number of clusters of dislocations 5t are formed at the bottom of the pits (linear defect set·dislocation set crystal regions 5h). Even if the total amount of dislocations is almost constant, the position B will be concentrated in the planar dislocations, the crystallized area is 5, and the linear dislocations are collected in the crystallized area 5h, so the dislocation density of other parts will decrease. . This method is different from the XI (10) method and is effective from the middle to the end of growth. This method is a completely novel method of reducing the density of dislocations. It is called facet growth method. The method of Patent Document 8 is called a random facet because it is impossible to know where a pit 5p (concave portion) is generated, so that it can be zoned with the subsequent modified shape. The surface of the crystal produced has severe irregularities. The growth conditions described in the examples of Patent Document 8 are represented by (growth temperature Tq, ΝΑ partial pressure PnH3, HCi partial pressure, fifth group/third group ratio r5/3), then (105) (rc, 20 kPa, 〇5 kpa, 4〇), (i〇〇(rc, 3〇kPa, 2 kPa, 15), (1(four).c, 2〇, 〇5 kPa &gt; 40) ^ (l 〇2〇t ^20 kPa ^ 1 kPa ^ 20) . (!〇〇〇r OO kPa, 2 kPa, 15), (1〇〇(rc ' 4〇kpa, 3 kpa, (7), (980°C, 40 kPa, 4 kPa, i〇). In Patent Document 8, the position at which the facet pit 5p (which is the same as the pit 5p formed by the facet 5f) is accidentally dominated, so it can be called a random facet. There is no local specificity, so the dislocation of the temporary assembly may be discretized again with the growth. In addition, since the substrate is used for making components, 135248.doc -17- 200937499 If the faceted pit is specified in advance The position where the 5p is generated is more preferable. If the dislocation can be closed and it is not separated from the crucible, the low dislocation can be further completely achieved. Patent No. 3864870 (Japanese Patent Laid-Open Publication No. Hei Publication No. Hei 9) ) As described below, as shown in FIG. 6, a mask 3 in which the isolated dot-like covering portions (the portions of the mask 3) are regularly arranged is formed on the base substrate 1, and the exposed portion of the base substrate is exposed (exposed) The portion is far larger than the covering portion (the portion of the mask 3); the GaN crystal is vapor-grown on the covered base substrate 2; the crystal growth on the covering portion (the portion of the mask 3) is slow, so that The covered portion (the portion of the mask 3) is a recessed portion (faceted pit 5p). The facet growth of the GaN crystal 5 using the dot mask will be described with reference to FIGS. 9A to 9F. An isolated dot-shaped covering portion (mask 3 portion) is formed on the base substrate 1. "When the gallium nitride crystal is vapor-grown, as shown in FIG. 9B, the crystal 5 is grown only on the exposed portion of the base substrate. It is not grown on the coated portion (mask 3 portion). If the crystal 5 is further grown, as shown in Fig. 9C, the crystal 5 is deposited on the exposed portion. The facet 5f having a low inclined surface index is 5f If the crystal 5 is further grown, as shown in FIG. 91), as shown in the surface of the covering portion (the portion of the mask 3), The bevel is a hexagonal cone of a faceted bamboo or a facet pit 5P of a dodecagonal pyramid. If the crystal 5 is further grown, as shown in Fig. 9E, the crystal 5 is also formed on the covered portion (the portion of the mask 3). Dislocation high density set of dislocations set crystallization area 5h. Below the facet 5f is a dislocation reduction 乂 facet growth crystallization area 5z. Flat face is c face c face k below the system dislocation reduction C face growth crystallization area 5y. Here, the dislocation crystallization region 511 in the GaN crystal, the dislocation reduction c-plane growth crystallization region 々 and the position 135248.doc 200937499 erroneous reduction of the facet growth crystallization region 5 can be observed by the visible light image of the fluoroscopy microscope GaN crystallizes. That is, the groundwater force is the visible light image of the first microscope, the dislocations are collected in the crystalline region 5 h 4 series flS· f +-3⁄4 ». Your dark &amp; field' dislocations reduce the C-side growth crystallization region A strong region (a region with a strong luminescence), and a dislocation reduces a region where the facet growth crystallization region is weaker (the region where the luminescence is weak). Referring to the plan view of the crystal 5, the rib face, the day 5, and the plan 5 of the crystal 5 shown in Fig. 7, the faceted pits 5p are arranged vertically and horizontally on the surface of the (a) aN crystal 5,

The domain facet pit 5p is formed by an inverted cone-shaped facet 5f such as a petal. In the crystal region of the stem under the pit 5p, the dislocation set of the dislocations is the 5h stem σ [5 (the dislocation set crystal region is called the part corresponding to the root part of the coating (mask 3) Part). The flat surface is the crystallization area under which CM. CM is grown (dislocation reduction Μ growth crystallization region W is low dislocation density portion. Crystallized region grown below facet 5f (dislocation reduces facet growth) The crystallization region 5z) is also a low dislocation density portion. It is distinguished from other regions and is sometimes called a dot type. It is assumed that this method is called a point facet growth method.

As described above, the facet concave portion 5p has a function of concentrating the dislocations 5 on the facet 5f toward the boundary line 5b and further concentrating toward the bottom of the pit. The bottom of the pit (over the portion of the mask (the portion of the mask 3)) is a dislocation-concentrated crystal region 5匕 of the dislocation assembly. The dislocations after the temporary assembly and * will be discrete again. Thus, the dislocation set crystallization region 5h is also referred to as "closed dislocation crystallization region". The less dislocations reduce the facet growth crystallization region 52 (produced in the square = square), and the dislocations decrease the C-plane growth crystallization region (produced below the kneading surface). The dislocations thus obtained reduce the facet growth crystallization region 5z and the dislocation reduction c 135248.doc -19-200937499 The dislocations are all reduced in the surface growth crystallization region. Thereby, the dislocations are also reduced by the facet growth crystallization region 5 z and the dislocations are reduced by the c-plane growth crystallization region 5y - and are referred to as dislocation-reduced crystal regions. According to Patent Document 9, the concept of the dislocation set crystallization region 5h, the dislocation reduction = facet growth crystallization region 5z, and the dislocation reduction c-plane growth crystallization region 5y^_ is formed first. Although referred to as a mask, there is not a small opening at a relatively small pitch as a mask. On the other hand, in the large exposed portion le of the base substrate 1, a relatively large dot (circle, four-sided, etc.) covering portion (mask 3 portion) is formed (Fig. 6). In the ELO mask shown in FIG. 1, the exposed portion ie (opening 3w) of the base substrate 窄 is narrower than the covered portion (the portion of the mask 3), and the exposed portion is small (the diameter is 2 _, and the pitch is also small (2). In contrast to the ELO mask, in the mask 3 based on the faceted pit of Patent Document 9, the exposed portion of the base substrate “ is "greater than the covered portion (mask 3 portion). The diameter of the mold 3 is quite large (diameter 2〇μιη~1〇〇μηι). The top of the cover 邛 (the mask 3邛) becomes the bottom of the faceted pit. The facet is outside the pit and the dislocation is concentrated to the bottom. It is captured without dispersing the dislocations again. It is characterized in that a dislocation-concentrated crystalline region 5h having a high dislocation density is formed at a position above the mask 3, and a dislocation-reducing facet having a low dislocation density is formed therearound. The growth crystallization region 5z and the dislocation reduction c-plane growth crystallization region 5y. The dislocation-reducing facet growth crystallization region 5z and the dislocation reduction C-plane growth crystallization are formed on the exposed portion 16 of the maskless base substrate 1 at a low dislocation density. Region 5y. Dislocations reduce the facet growth crystallization region 5z formed in Immediately below the surface of 5f 'and reduce the growth of the dislocation crystal region 5y is formed on the C-plane C-plane growth portion 135248.doc -20 - 200937499

The lower azimuth error reduction facet growth crystal region 5z and the dislocation reduction c face growth crucible day region 5y are all single crystals and the dislocation density is low. The dislocation-forming crystal region can be formed centering on the dot mask. 5 h / dislocation reduces the facet growth. The crystal region 5z/dislocation reduces the concentric structure of the C-plane growth crystal region. In the ELO, the exposed portion of the base substrate “ "(the opening 3 of the mask 3 is above the dislocation density crystallization region 5h of the dislocation density, and the upper portion of the coating portion (the portion of the mask 3) is at the low dislocation density) The difference between the facet growth crystallization region 52 and the dislocation reduction C-plane growth crystallization region 5y is reversed. The growth conditions in the examples of Patent Document 9 are (the growth temperature Tq, NH3 partial pressure ΡΝΗ 3, Ηα partial pressure ρΗα, the ratio of the fifth group/third family U means 'then (1050〇c, 3〇kPa, 2 kPa, 15), (1030 C, 30 kPa, 2_5 kPa, 12), (l 〇i (TC, 2 kPa, 2.5 kPa, 8), (1030 C, 25 kPa, 2.5 kPa, 10), (i〇5〇°c, 3〇kPa, 2.5 kPa, 12), (l〇30 °C, 25 kPa, 2 kPa, 12.5), (1030 ° C, 25 kPa, 2 kPa, 12.5). In Patent Document 9, the mask 3 is an isolated point (dot) in a regular distribution, and thus is formed at a point. The dislocations collect the crystal regions 5h, and form dislocations around them to reduce the facet-grown crystal regions 5 z and the dislocations to reduce the c-plane growth crystal regions 5y. Semiconductor lasers or light-emitting diodes and the like It is formed in the dislocation-reducing facet-growing crystal region 5 z and the dislocation-reducing C-plane growth crystal region 5 y. Therefore, it is not preferable if the dislocation-collecting crystal region is dispersed for 5 h. Therefore, the patent No. 3801 125 (Japanese Patent Laid-Open Publication No. 2003-183100, hereinafter referred to as Patent Document 〇), as shown in FIG. 1A, a portion having a parallel stripe shape is formed on the base substrate 1 at equal intervals (mask 135248.doc) -21 - 200937499 Part 3 of the mask 3, and GaN crystal facets are grown thereon. The width Ds of the covered portion (mask 3 portion) of the mask 3 and the width Dw of the exposed portion of the base substrate! The total value is the pitch Dp (Dp = Ds + Dw). Ds is much smaller than Dw. GaN crystal growth is performed on the base substrate 1 by vapor phase growth. Referring to the plan view of the crystal 5 shown in Fig. 11 and Fig. 12 A perspective view of the crystal 5 is shown, and the obtained GaN crystal 5 is a plurality of concavo-convex crystals having a flat top surface in parallel, and is formed in parallel with each other on the covering portion (the portion of the mask 3).

错 The crystallization region is assembled for 5 hours, and dislocation-reducing facet-growing crystal regions 5z and dislocation-reducing c-plane growth crystal regions 5y are formed on the exposed portions of the base substrate. The region formed on the parallel mask and in which the dislocations are concentrated is referred to as a dislocation crystal region 5h. A crystal region which is adjacent to the dislocation crystal region 讣 and continuously grows under the facet 5f is referred to as a dislocation-reducing facet growth crystal region 5z. When the adjacent dislocations reduce the facet-grown crystallization regions between 5z and 5z, dislocations are sometimes reduced to reduce the c-plane growth crystallization region, sometimes not occurring. In Patent Document 9, the dislocation-concentrated crystal region 5ht formed on the (4) of the isolated dots is not scattered again. That is, the dislocation set crystallization region formed on the isolated dot-shaped mask is closed. Similarly, in the dislocation-concentrated crystal region 形成 formed on the strip mask, the temporarily accumulated dislocations are not discrete again. That is, the dislocation-concentrated crystal region 5h formed on the strip mask is also closed. The dislocation-reducing facet-grown crystallization region is grown by the dislocation-collecting crystallization region 5h. The dislocation reduction C-side growth crystallization region 5y is sometimes generated and sometimes does not occur. This dislocation reduces the C-plane growth crystal region 5y to a crystal region grown below the C-plane. 135248.doc •22- 200937499 According to different growth methods, sometimes the bit is secreted, and p = = dislocation reduces the C-side growth crystallization area 5y will also disappear. Referring to the plan view of the crystal 5 shown in Fig. U and the perspective view of the crystal 5 shown in Fig. 14, the (four) crystal 5 system, which has a sharp ridge line, is sometimes obtained. A dislocation crystal region 5h which is parallel to each other is formed on the covering portion (the portion of the mask 3). The dislocation collection crystal region 511 is a concave portion. On the exposed portion of the adjacent base substrate 1, a mutually parallel dislocation reduction facet growth crystal region 5z is generated. The convex facets 5f, 5f are sharp and have no part of the c face 5c. The dislocations reduce the c-plane growth crystallization region and disappear. That is, the GaN crystal 5 to be treated has ... dislocation reduction facet growth crystal region 5z/dislocation set crystal region 5h/dislocation reduction facet growth crystal region 5z/dislocation set crystal region 5h... . The stripe type facet growth method will be described with reference to Figs. 15A to 15F. As shown in Fig. 15A, a plurality of stripe coating portions (mask 3 portions) in a parallel line shape are formed on the base substrate. As the base substrate! When the gallium nitride crystal is grown in the vapor phase, as shown in Fig. 15A, the crystal 5 is grown only on the exposed portion u of the base substrate, and is not grown on the coated portion (the portion of the mask 3). When the crystal 5 is further grown, as shown in Fig. 15C, the crystal 5 is deposited on the exposed portion le of the base substrate 1. The facet 5f with a low slope surface index. The crystal 5 is a parallel island shape separated by a covering portion. When the crystal 5 is further grown, a V-groove having a covered portion (the portion of the mask 3) as a base and including a parallel inclined surface inclined in the opposite direction is generated in parallel as shown in Fig. 15D. The facing inclined faces are facets 5f, 5f whose inclination directions are opposite to each other and which form the same angle. The flat surface of the crystal 5 between the adjacent masks 3, 3 is the c-plane 5c. If the crystal 5 is further grown, as shown in Fig. 5E, the crystal 5 is also formed to be covered by the 135248.doc 23-200937499 (mask 3 portion). This dislocation is a high density collection of dislocations in the crystallization zone 5h. The right crystal 5 is further grown, and as shown in Fig. i5F, the dislocation-collecting crystal region above the mask 3 substantially maintains its width and extends upward. The facets 5f, 5f become larger. The dislocations directly under the facets 5f and 5f reduce the facet growth crystallization region 5z. The dislocation set crystallization region 5h and the dislocation reduction facet. ★ The boundary of the crystal region 5z is the grain boundary 5k. The grain boundary is closed by dislocations in the crystallization zone 5h. &lt;(4) The flat surface C of the crystal 5 above the portion between the masks 3 and 3 is c-plane 5c C-plane 5c. The dislocation reduces the c-plane growth crystal region 々. The c-face is gradually narrowed. The distance between the crystals 5 forming the stripe structure and the distance between the masks 3 and the like. The mask pitch Dp is the sum of the width Ds of the mask 3 and the width Dw of the exposed portion of the base substrate ( (Dp = Ds + Dw). When crystallization is carried out and further grown, as shown in Fig. 16A, it is grown into a parallel crystal 5 like a mountain of a mountain ridge with a dislocation crystal region (10) and a c-plane 5c. Corresponding to the c-plane of the top of the mountain. The P-knife is deformed below the facet 5f to form dislocations to reduce the growth of the facet crystals. The region 5z, and the c-plane growth crystal region is formed directly below the C-plane. When the crystal 5 is further grown, the crystal may be maintained in the shape shown in Fig. 16 and grown upward. Alternatively, as shown in Fig. 16B, it may sometimes become a parallel mountain having a steeper peak. In this case, the c-plane disappears and the C-plane growth crystallization region 5y also disappears. According to the crystal 5 obtained in Patent Document 10, it has a strip-like expansion. · Dislocation reduction facet growth crystal region 5z/dislocation set crystal region 5h/dislocation reduction facet growth crystal region 5z/dislocation reduction c-plane growth Crystalline region 5y/dislocation reduction facet growth crystallization region 5z/dislocation set crystal region 5h/dislocation reduction 135248.doc •24- 200937499 2 surface growth crystallization region 5z/dislocation reduction Ct&amp; growth crystallization region 5y/dislocation Reduction ^ facet growth crystallization region 5z / dislocation set crystallization region 5h... structure, or scorpion strip expansion... dislocation reduction facet growth crystallization region Μ dislocation set crystallization region 5 h / dislocation reduction Surface growth crystallization region 5 z / dislocation set crystallization region 5 W dislocation reduction facet growth crystallization region 5z / dislocation set crystallization region 5h. The dislocations are concentrated in the dislocation set crystallization region 5h, and the dislocations reduce the facet growth crystal regions 5z and the dislocation reduction c-plane growth crystal regions 5y are single crystals and the dislocation density is low. ► According to the method of Patent Document 1Q, stripe masks which are parallel to each other are formed, and stripe dislocation crystal regions 5h which are parallel to each other are formed, so this method can be called stripe facet growth method. In the crystal obtained by this method, the dislocation-reduced J facet growth crystal region 52 is formed in a linear shape, so that it is easy to fabricate an element such as a semiconductor laser or a light-emitting diode. The facet growth method is completely different from the ELO method. The shape, size, function, and the like of the mask are also different. The shape and size of the EL 〇 mask and the stencil mask having a zigzag opening are different, and can be clearly distinguished. The mask width Ds of the stripe mask is about 20 μηι to 3 〇〇 μιη, and the pitch Qi is about 1 〇〇 μιη~2000 μηι. For example, the width of the stripe mask is assumed to be a curse and the distance Dp is 5 00 μπι. In the facet growth method using a dot type or stripe type mask, dislocations are concentrated in the dislocation collection crystal region 5h on the mask and surrounded by the grain boundary 5k, so that the dislocations are not dispersed again. The dislocations adjacent to the dislocation set crystallization region 汕 reduce the facet-grown crystallization region 5z and the dislocation-reduced facet-growth crystallization region &amp; adjacent dislocation reduction C-plane growth crystallization region 5y-series single crystal and dislocation density is I35248 .doc -25· 200937499 Low. This dislocation reduces the crystallization area and can be used as a fraction. ‘,、, the current circulation part of the component

In the GaN crystal, the {1-100 丨 direction is a cleavage plane, so the resonator mirror can be formed by self-error* TT-. Since the roll and "doped oxygen" to form an n-type, the electric or melon can be circulated to form an n-electrode on the bottom surface. The clock is superior to the sapphire substrate. (4) In terms of (10) crystal, the exposed portion of the base substrate is further Smaller, the crystallization of the growth on it

The dislocation density is higher, and the (4) (mask portion) is larger, and the dislocation density of the crystal grown thereon is lower. In contrast to this stripe type facet method, the exposed portion of the base substrate is large, and the dislocation density of the crystal of the upper county is lower, and the covering portion (mask portion) is narrower, and four of them are provided thereon. The density of the crystals grown on Dan is higher.

The growth conditions in the examples of Patent Document 10 are expressed as (growth temperature Tq, NH3 partial pressure P·3, hci partial pressure Phc丨, fifth group/third group I R5/3) (1050T: , 30 kPa, 2 kpa, 15) '30 kPa, 2, (1030 ° C, 25 (1030 C, 30 kPa, 2.5 kPa, 12), (1〇5〇. kPa, 15), ( L〇i (TC, 20 kPa, 2.5 kPa, 8) kPa, 2 kPa, 12.5), (103 (TC, 25 kPa, 2.5 kPa, i〇). 曰 Patent-Open Patent Publication No. 2005-306723 (hereinafter referred to as In the patent document ij), the following method is proposed, by using Hr TMG, ammonia as a raw material gas, MOCVD method using CsH^Fe as a dopant or h2, HC1

The Ga melt and ammonia were used as raw materials, and the HVPE method as a dopant was used to crystallize the iron-doped GaN on a sapphire (0001) substrate to obtain an iron-doped GaN substrate. 135248.doc -26- 200937499 Regarding the growth conditions in the example of the patent document 1 (M0CVD method), if (the growth temperature Tq, the NH3 partial pressure pNH3, the TMG partial pressure pTMG, the fifth/third group ratio) U is expressed as '(1〇〇〇°c, 15 kpa, 〇3 core, 50) °. Regarding the growth conditions in the example of the patent document 11 (HVPE method), if (the growth temperature Tq, NH3 points) The pressure Pmn, the HC1 partial pressure PHC1, the fifth/third group ratio R5/3) are expressed as '(1 〇〇 (rc, 15 kPa, 0.3 kPa, 50). © [Summary] It is used as an n-type GaN substrate for a blue light-emitting diode or a semiconductor laser substrate. Although an AlInGaN substrate containing a small amount of μ and germanium is also attempted, its use is as a substrate for a light-emitting element. The conductivity is high, and a high-density current can flow. The dopant is sometimes bismuth (Si) and sometimes oxygen (〇). However, the object of the present invention is not n-type crystallization, but semi-insulating (semi-insulating) : SI) GaN substrate crystal. It is not an n-substrate for light-emitting elements, but is used for SI substrates such as FETs. In the case of a high-density current, a high-density current flows on the substrate, so that the deterioration of the monthly b is caused by dislocations. In the case of a semi-insulating GaN substrate (SI_GaN substrate) for an electronic device, it is necessary to have a high voltage resistance. High current withstand voltage and high resistance. If the substrate has a high dislocation density, it will cause leakage current, so it is not preferable. It is preferable to form a plurality of layers of GaN having a regular lattice structure on the substrate. InGaN, AlGaN film, so that the dislocation is less. In the case of semi-insulating 135248.doc -27- 200937499 GaN substrate, it is strongly expected to have higher insulation, less warpage, lower dislocation density and crack generation. The GaN substrate listed in the prior art (Patent Documents 1 to 10) has a low resistivity. Patent Document ii GaN* plate has a resistivity of 0 〇〇 5 〇〇 8 ' GaN substrate of Patent Document 2 The resistivity of 0.0035 to 0.0083. The G aN substrate of Patent Document 3 has a resistivity of 0.01 to 0.017 r2 cm. It is not described in the patent documents that the n-type dopant has been added, so whether the pore of the fifth group is considered to be Forming the body energy level, In addition, the n-type dopant element contained in the source gas © is added. The specificity of the specific resistance is not described in Patent Document 4. This is to produce a low-resistance GaN substrate by using Si as a dopant. It is presumed that the specific resistance is lower than those of Patent Documents 1 to 3. According to these descriptions, the upper limit of the specific resistance of the conventional GaN crystal is considered to be about 0.08 Qcm. The semi-insulating substrate which is a substrate for a horizontally mounted electronic component does not contribute to such a low resistance. As the semi-insulating group 3 to group 5, the nitride substrate preferably has a specific resistance of 1 〇 5 ncm or more. Depending on the purpose, sometimes it is required to be 1〇6 ncm or more or 1〇7 Qcm or more. The GaN crucible fabrication technique of A first cannot produce such high resistance crystals. How to solve it. The fifth group of pores is a donor body, and in order to prevent the generation of the fifth group of pores, the supply of the fifth group of raw materials can be increased. As described above, the ratio of the fifth group to the third group in the M〇CVD method is 3 to 1000, and if the fifth group/second group ratio Rw is higher than 1〇〇〇2 to 2〇〇〇, the raw material is Waste also increases. In the case of Sui Ze, the ratio of the fifth/third family is mostly 12~5〇. Although the fifth family's original rate can be increased, it will lead to the loss of raw materials 135248.doc -28- 200937499 is not good. If a high-purity raw material is used and impurities are not contained, a gallium nitride crystal having a larger electrical resistance should be produced. However, even in this case, the crystal is naturally n-type, and the semi-insulating property to the extent that it can be used for the horizontal electronic component cannot be obtained. As another option, a method of suppressing the activity of the n-type carrier by adding other elements is considered. Patent Document U describes the semi-insulating properties of the iron-doped GaN crystal system. Because of the vapor phase growth method, it is necessary to provide an iron compound in a gaseous state. In Patent Document 11, a dicyclopentadienyl iron is used as a dopant on a sapphire substrate, and a gallium nitride crystal is produced by an MOCVD method. In the patent document, iron-doped GaN crystals are grown on a sapphire substrate without using a mask. The electrical resistivity of GaN crystals is enhanced by iron. According to Patent Document 11, it is known that an iron-doped method is effective for producing semi-insulating GaN. Further, in order to use as a substrate for an electronic component such as an FET, warpage is small and a crack generation rate is low, which is an important condition. Patent Document 1 has no description of the occurrence of cracks or cracks. The method for fabricating a semi-insulating nitride semiconductor substrate of the present invention comprises the step of forming a mask on a base substrate, the mask being covered by dots or strips having a width or diameter Ds of 10 μηη to 100 μηη. The parts are arranged at intervals of 25 〇μηη to 2000 μηι; by the HVPE method, the third group/second group ratio Rs/3 is supplied to the third group of source gases and the fifth group source gases. And iron-containing gas, and at 1040 ° C ~ 1150. (the step of growing the nitride semiconductor crystal on the base substrate at the growth temperature; and the step of removing the base substrate; thereby obtaining a specific resistance of Ixl 〇 5 Qcm to 135248.doc -29-200937499, thickness 100 μπι The above-mentioned independent semi-insulating nitride semiconductor substrate. Here, the growth temperature refers to the temperature (substrate temperature) of the base substrate used for crystal growth. As the base substrate, a (111) plane Ga As wafer can be used. A sapphire wafer, a SiC wafer, a GaN wafer, etc. Fig. 19 is a schematic longitudinal cross-sectional view showing an HVPE furnace. A heater 1 〇3 is provided on the outer side of the vertically long reactor 102. The heater 1 〇3 can be used. The longitudinal direction extends and can be divided into several parts, so that an arbitrary temperature can be formed in the upper and lower direction. The reaction furnace 102 has a hot wall. The Ga reservoir in which the Ga melt is stored is disposed in the upper part of the reaction furnace 1〇2. A crucible 5 supported by a rotating shaft that is rotatably lifted and lowered is disposed below the reactor 1〇2. The base substrate 1 is placed on the wafer holder 1〇5. The first material gas supply pipe 1〇7 To Ga memory 1 〇 4 A gas of hydrogen (H2) and hydrogen chloride (HC1) is supplied. HC1 reacts with Ga to generate GaCl gas. The GaCl gas moves downward. The second material gas supply pipe 1〇8 supplies hydrogen gas and ammonia to the base substrate 1 (Nh3). GaCl reacts with NH3 to form GaN, and GaN crystal is grown on the base substrate 1. The third raw material gas supply pipe no supplies the gas compound of iron (Fe) and the carrier gas (HO mixed gas) into the reactor. The inside of the grown GaN crystal is doped with iron. After the reaction, the exhaust gas and the unreacted gas are discharged from the exhaust pipe 109. As a raw material for doping iron into the GaN crystal, a dicyclopentadienyl group (CsHAFe or a ruthenium) is used. Cyclopentylalkenyl (CH3C5H4)2Fe. These gases are gaseous, so that the gas flow path from above is blown into the reactor as a gas. After the pyrolysis, it is incorporated into the crystal or reacted with HC1. 135248.doc • 30- 200937499

After FeCl, FeCl2 or FeCl3, it is blown into the crystal. The iron concentration CFe in the nitride semiconductor substrate produced in the above manner is lxlO20 cm-32CFe2 1x10 丨6 cm-3. The resistivity of the nitride semiconductor substrate is lxl 〇 5 Dcm or more. The mask is formed of Si〇2, Si〇N, SiN, AIN, Ai2〇3, or the like. Off • In the mask size, the width of the covered portion (the portion of the mask 3) 仏 is 10 μΠ1 to 100, and the interval between the covering portions (the portion of the mask 3) Dw is 250 μm to 2000 μπι. The pitch Dp is 26 〇 〜 21 〇〇 _, where there is a relationship of φ Dp = Ds + Dw. In the case of the dot mask, the diameter of the covering portion (the portion of the mask 3) is 1 μm to 100 μm, and the interval between the covering portions (the portion of the mask 3) is Dw = 25 〇 gm 〜 2 〇〇〇 μηι' Dp is 260 μηι~21〇〇(4), here, there is a relationship of d corpus Ds+Dw. When the substrate temperature is iiMcrc-iosoi, the crystal 5 (type 11) having a convex shape of the facet is grown, and the facet 5 is lower than the cover portion (the portion of the mask 3), and is on the base substrate 1 The exposed portion le becomes higher (Fig. 2〇). In the crystal 5, the crystallographic region 讣 is dislocated on the mask 3, and the dislocation below the facet 5f on the exposed 邛le of the mask 3 reduces the facet growth crystallization region 5z °. In order to emphasize the contrast with FIG. 2, the crystal surface is only depicted as a convex shape. This ideal shape is achieved only when a stripe mask is used and crystal growth is carried out under special conditions. When the dot mask is used, the above shape cannot be formed due to geometric limitations. Regardless of whether a dot mask is used or a stripe mask is used, in many cases, C^c (indicated by a broken line) is generated at a position intermediate to the mask 3 of the adjacent 135248.doc -31 - 200937499, and A dislocation below c face 5c is generated to reduce the C-plane growth crystallization region. Formed as a mixed dislocation set crystal region 讣 and dislocation reduction facet growth crystallization region 5z, or dislocation set crystal region 5h, dislocation reduction facet growth crystal region 5Z and dislocation reduction C-plane growth crystallization region 5y The structure of the different ones can alleviate the deformation (stretching) caused by the internal stress generated by the reduction of the distorted growth crystallization region 5z and the dislocation reduction c·· the reduction of dislocations in the surface growth crystallization region 5 y. In the 11-type crystal 5 shown in Fig. 20, the facet 5f is provided on the upper surface, and there is a tendency that oxygen is easily taken in by the facet 5f. Therefore, there is a case where the effect of iron doping is offset by oxygen as an n-type impurity. If so, there is also a case where the concentration of iron must be increased, resulting in an increase in the amount of all impurities. When the substrate temperature is higher, 1〇8〇. (:~1150. (In the state of Fig. 21, the 丨-type crystal 5 having the same surface growth height is the same. The crystal surface is substantially flat C-plane 5c. It is also depicted in Fig. 21 to emphasize and Fig. 2 The ideal shape of the contrast. In most cases, the portion of the mask 3 is slightly recessed. The original reason is that the mask 3 is discolored on the exposed portion 1 e of the base substrate i There is a dislocation-reducing facet-grown crystal region 52 and a dislocation-reducing C-plane growth crystal region 5y. Since the structure is alternated by different structures, the stress inside the crystal can be alleviated. The type I crystal 5 shown in Fig. 21 is almost It does not have oxygen when it has no facet 5f. Therefore, the effect of iron doping becomes remarkable. The impurity concentration of the whole can be reduced. "Since the impurities are less, the type I crystal 5 has internal stress. Small, more difficult to produce cracks. That is, the Ϊ-type crystal is the best structure for 135248.doc •32- 200937499 iron-doped nitride crystals. When making type I crystals, it is better to 'at higher temperatures. And the ratio of the fifth group/third group is smaller than R5,3. For example, 'the substrate temperature is set to 1080. 〇~1150 ° C high temperature, and the ratio of the fifth group / the second group Rs / 3 is set to 1 ~ 1 〇. Further, the substrate temperature is set to 1090 C ~ 1150 ° C, and the fifth or third family scale 5, 3 is set to Bu 5, then the I type structure can be formed more reliably. When the ratio of the fifth group / the third group I, 3 is 丨 ~ (9), When the substrate temperature is close to i〇8〇°c (for example, 107 (rc to 109 (rc)), as shown in FIG. 24, a mixed type of type 1 and type II is formed, such as a crystal having a trapezoidal apex. In the three cross-sectional views of 21, 24 and 24 (Fig. 2〇, 21, 24), the crystals having three types (structures) are respectively shown, and the shape of the cross section is not generated at a certain growth temperature (substrate temperature). The phase change of the phase change Y crystal is continuously changed according to the growth temperature (substrate temperature) and the ratio of the fifth/third group R5/3. When the substrate temperature is mo~115〇u, the fifth family/ When the ratio of the second group is r5/3, crystal growth is carried out in the state of ~3, and a flat type of crystal having an ideal crystal surface as shown in Fig. 21 can be obtained. The growth temperature (substrate temperature) is lowered, and the ratio of the fifth group/third group R5/3 is increased, and the crystal of the heart shape (the crystal surface is flat twisted) from Fig. 21 is directed to the type 11 of Fig. 20 (crystal surface) The crystal growth of the mountain shape). As the growth temperature of the vapor phase growth method of the nitride semiconductor crystal, the substrate temperature of 1050 C to 1 150 ° C is more than that of the ancient dish. The type I growth system indicates that if ^ Growth temperature (substrate temperature), even if the crystal is flat on a large surface. jj growth table when the ratio of the fifth/third group is 'yield', at the nitride semiconductor junction I35248.doc 33- 200937499 = vapor phase growth method It can also be considered to be an extremely small limit. The idea of the present invention is to crystallize the iron-doped nitride semiconductor by a fifth/group ratio of 5/3 and a high growth temperature. 7th, the first month of the "list towel" about the growth temperature (substrate temperature) and the fifth group I 〆 two families ratio ~ 3 why, quote (4) document (10) line description, the series of substrate temperature and the fifth family / The ratio of the three races.

❹ Figure 22 shows the relationship between the growth temperature (substrate temperature) and the ratio of the fifth/third group R5,3. The horizontal axis growth temperature (substrate temperature). The vertical axis is a logarithm of the fifth/third group ratio r5/" black dot indicating the ratio of the growth temperature (substrate temperature) to the fifth/third group using the HVPE method in the previous example r5/3 The white round black dot is the growth temperature by the M〇CVD method in the previous example (the substrate temperature m is the fifth group/third family ratio R5/3. The subscript indicates the serial number of the cited patent document. One point Corresponding to an embodiment. For example, (the growth temperature Tq, the ratio of the fifth/third group u is (97〇t&gt;c, 1〇〇), there are three white and black dots, and there are 丨, 丨, 丨The three examples of the MOCVD method of Patent Document 1 are (97〇〇c, 1〇〇). In Patent Document 1, the growth temperature (substrate temperature) is 95 〇 &lt;&gt; There are nine black dots representing the embodiment of HVPE between 〇. There is no clear example in Patent Document 4, 'the growth temperature Tq in the M〇CVD method has 96 (TC~105 (rc) The range, and the ratio of the fifth group/third group R5/3 is 1000, 800, etc., thereby expressing the result in a continuous straight line. Regarding the Π type crystal in the present invention, the white triangle is used. The growth temperature (substrate temperature) and the ratio of the fifth group/third group ratio Rs/3 are shown. The growth temperature is 1050 C and the ratio of the fifth/third group is 14 points. Temperature 135248.doc •34- 200937499 The ratio of Rs/3 to 5 is 1. The ratio of the raw two is Rs/3 is 10, the degree is 1 degree Tq is 1050 °C and the temperature of the fifth/third family is long. Tq is l〇50°C and the fifth family/first 0

Regarding the present invention! Type crystal, which is a white dot indicating the growth temperature (substrate temperature) and the ratio of the fifth/third group ratio. The growth temperature ^ is moc and the ratio of the fifth/third group ratio R5_2.5 has _. The growth temperature Tq is 1110 ° C and the ratio of the fifth/third group to 3 is 3. The growth temperature Tq is UHTC and the ratio of the fifth group/third group ratio (4) is i, the growth temperature Tq is 1 loot, and the ratio of the fifth group/third group is one. In Fig. 22, the growth temperature (substrate temperature) of the present invention and the range of the fifth/third group ratio Rw are surrounded by a broken line. 1 〇 8 〇 &lt; t is a preferred temperature for the mixed crystal growth between the type and the Η type. In Patent Documents 2 and 3, a mask having a large pitch is not used. There are eight embodiments in which the ratio of the fifth/third group R5'3 is three. There are two embodiments in which the ratio of the fifth/third group is still four. The ratio of the fifth/third group is "the implementation of the second and the second." However, the substrate temperature is 97 (rc, 1020t, or 1〇3 (rc, both at the lower limit of the present invention, that is, 1〇4〇). (: The following is a case where the mask having a large pitch is not used in Patent Documents 2 and 3, and the iron doping is not performed. The present invention differs from Patent Documents 2 and 3 in three places. Patent Document 8 is the first to propose a facet. The growth method, but does not use a mask having a large pitch. The growth temperature is 105 (rc. The ratio of the fifth group/third group is r... is 40. There is no iron. The present invention differs from Patent Document 8 in three places. In Patent Documents 9, 10, a mask having a large pitch is used. When the growth temperature is 135248.doc -35·200937499 l〇3〇°C or 1050°C, the fifth/third family scale 5/ 3 is 12, 12 5, or 15. When the ratio of the fifth group/third group Rs/3 is 8, the growth temperature is 1010 ° C. Iron is not doped. The quinoid crystal of the present invention and the patent document 9, 1 There are two differences in the enthalpy. The surface of the crystal of the type I crystal of the present invention is substantially flat, so there are three differences from the patent documents 9 and 10. Patent Document 11 is the only iron-doped document "in the V10CVD method". The long temperature is 1000 C and the ratio of the fifth/third group Rs/3 is 50. The growth temperature is 1000 ° C in the HVPE method and the ratio Rw of the fifth/third group is 50. The ® mask is not used. The present invention and the patent document differ in the growth temperature (substrate temperature), the ratio of the fifth/third group Rs/3, and the presence or absence of the mask. The doping with iron can offset the intrinsic donor body. Thus, a semi-insulating nitride semiconductor substrate having a specific resistance of 107 Qcm or more can be obtained. A mask having a large repeating pitch is formed on the base substrate and crystal growth is performed thereon, so that a dislocation-collecting crystal region 5h can be internally generated. Or the dislocation reduces the structure of different tissues such as the facet-grown crystal region 5z, the dislocation-reduced C-plane growth crystal region 5y, etc., etc., which moderates the internal stress of the crystal, so that a crystal with less curvature can be obtained. The high temperature of 1040 ° C to 1150 ° C, and the ratio of the fifth group / the second group R5 / 3 is set to a lower value of 1 to 1 ,, so even if a mask having a large repeat distance is formed A fairly flat junction crystal can also be grown on the base substrate, thereby preventing relatively well Therefore, the crystal structure is less confusing, and warpage and cracks are less. [Embodiment] The present invention will be easily understood from the following [Embodiment] of the present invention. 135248.doc 36· 200937499 The above and other objects, features, aspects and advantages. In Patent Document 11, the substrate temperature is set to 1000 〇c, the ratio of the fifth/third group Rw is set to 50, and the iron-doped GaN crystal is grown on the sapphire substrate. If the iron-doped GaN crystal is vapor-phase grown directly on the base substrate as described in Patent Document 11, the heterogeneous iron may be mixed, resulting in deformation of the lattice structure. If the impurity concentration (iron concentration) is high, a large stress is generated, the stress cannot be alleviated, the internal deformation becomes large, and cracks and warpage become large. If the internal stress is not alleviated, it is impossible to suppress warpage, cracks, and Fe doping at a high concentration. In the facet growth method proposed in Patent Documents 8, 9, and 10, a mask having a large exposed portion of the base substrate is provided on the base substrate, and dislocations (crystal defects) are concentrated on the mask 3, This has the effect of reducing the dislocations in the peripheral portion (the dislocation-reducing crystal region 5yz, that is, the dislocation-reducing facet-growing crystal region 52 and the dislocation-reducing C-plane growth crystal region 5y, the same below). Its intent is to reduce dislocations. In the case of a semi-insulating substrate, in order to achieve high current resistance and high voltage resistance, it is preferable that the dislocation density is low. Further, 'the facet growth method of Patent Documents 8, 9, and 10, which produces portions of different structures in crystallization, that is, 'dislocation crystallization region 5h, dislocation reduction facet growth crystallization region 5z, and dislocation reduction c-plane growth The crystallization region is 5y, so the stress can be alleviated. Therefore, it is known that it also has an effect of reducing warpage and suppressing generation of cracks. Therefore, the present invention also utilizes a method of faceted growth in the production of iron-doped GaN crystals. As shown in Patent Document 8, there is no mask in the facet growth method, but as in Patent Documents 9 and 10, the mask 3 is provided on the base substrate 1 and the dislocation-concentrated crystal region 5h is specified in advance, and the dislocation is reduced. The facet-grown crystallization region 5z 135248.doc -37- 200937499 and the position at which the dislocations reduce the portion of the C-plane growth crystallization region 5y. Dislocation assembly dislocations crystallization region 5h, dislocations with less dislocations, reduction of facet-grown crystallization regions 5z, and reduction of dislocations (the surface growth crystallization region, the structure of the scorpion) can alleviate the internal stress of crystallization. Even Deformation due to impurity doping can also offset the stress. Therefore, a method of providing a mask on a base substrate for faceted growth is useful for the fabrication of iron-doped GaN crystals doped with impurities at a concentration of germanium. The growth of the crystal on the mold-coated portion is slow, and the growth on the exposed portion of the base substrate is faster, so that the facet is generated and the dislocation density is reduced. However, it is understood that if there is a facet, as described in Patent Document 7, oxygen Excessively doping into the interior of the crystal by the facet. As described in Patent Document 6, the oxygen-based n-type carrier cancels the effect of iron doping. If oxygen is doped, it must be doped to compensate the oxygen. Iron atoms. If so, the oxygen and iron contained in the crystal are both high concentrations. Oxygen and iron are not the original constituent elements of GaN crystals. If a large amount of doping is used, the lattice structure of the crystal is disturbed. ,iron The addition causes a decrease in the regularity of crystallization, thereby increasing the dislocation density, increasing the internal stress, and increasing the warpage. The rate of occurrence of cracks also rises. &amp; However, oxygen is not required. Therefore, it is desirable to suppress the oxygen concentration as low as possible. For example, it is necessary to purify the raw material gas as much as possible to remove oxygen and moisture. However, even in this case, it is difficult to completely remove the water. Oxygen, water. As described in Patent Document 7, oxygen is difficult to incorporate from the c-plane but is easily incorporated by facet 135248.doc -38- 200937499. That is, 'no facet is formed and growth is performed on the c-plane. It is expected to reduce the incorporation of oxygen. C-plane growth should be carried out before Patent Documents 8, 9, and 10. The general C-plane growth in Patent Documents 1 to 5 is also reconsidered. However, the results and patent documents 11 is the same. The crack and distortion cannot be satisfied. The facet growth method of Patent Documents 8, 9, and 10 not only has the effect of reducing dislocations, but also has the effect of reducing internal stress of crystallization and reducing warpage.

The effect of reducing the dislocation is required, and the internal stress reduction effect is also required. Therefore, the inventors considered that, by the mask of Patent Document 9, the mask, the exposed portion of the base substrate is larger than the distance between the covered portion, the covered portion, and the exposed portion, and the substrate temperature is the same as The ratio of the five/third group is "controlled within a proper range to suppress the facet, whereby the warpage is small and the cracks generate less crystal growth. For example, when a parallel mask of 50 μηι width is used It is possible to carry out the growth of crystals at a distance of 5 Å and to form a facet without forming a facet. Therefore, it is known that the growth temperature is higher and more third-group raw materials (Ga or the like) are supplied. • The higher growth temperature (substrate temperature) above 1080 C makes the ratio of the fifth/second group as low as 丨~1 〇, even if it is held on a mask with a large pitch. If the ratio of the fifth group/third group R5/3 is 5 in the above substrate temperature, crystal growth can be performed more reliably while maintaining the c-plane. As shown in Fig. 21, at the substrate temperature. For the fifth group/third family ratio R5/3 is 1~1, the facet is not formed. Ding, "said growth. If so, oxygen will hardly be broadcast. Oxygen will counteract the effect of iron doping 135248.doc -39- 200937499 but it will show the effect of iron doping. Therefore, the nitride semiconductor crystal is semi-insulating. Since the crystal grows on the mask, a heterogeneous portion such as a dislocation-collecting crystal region 5h, a dislocation-reducing facet-grown crystal region 5z, and a dislocation-reducing C-plane growth crystal region are formed. These can reduce internal stress, so warpage and cracks can be reduced. e 即便 Even if it is aerated with oxygen, it can be doped with iron that can offset it. Even if a large amount of impurities are incorporated, 'as long as the internal stress is small. As described above, if the dislocation-collecting crystal region 5h, the dislocation-reducing facet-growing crystal region 5z, the dislocation reduction, and the C-plane growth crystal region 5丫 and the like are mixed, the warp and crack are reduced. Since &amp;'s even slightly lowering the growth temperature (substrate temperature)', the stress can be reduced as long as the mask structure is present. When the temperature of the substrate is lowered to about 1 WC lower and the nitride semiconductor crystallizes in the mask structure, the right side is Λ, and the c-plane growth is not performed, but the facet growth is performed. f is the situation as shown in FIG. Although the _ side forms the facet 5f—the side grows, but the right fifth/second group ratio R5/3 is lower', it can prevent oxygen from entering to some extent. Further, the ratio of the fifth group/the second group of the substrate degree R5/3 in the initial stage of growth can be controlled within an appropriate range to reduce the dislocations and internal stress of the crucible, and then, the crucible is performed. The way of C-side growth is to control the substrate temperature, the fifth initial _ / @ &gt;, and the ratio of the second group R5, 3 within an appropriate range to reduce the amount of oxygen incorporated, to be private, and thus less Fe doping. Miscellaneous to make high resistance

GaN substrate. As shown in 圊21, will be a gentleman*

The crystals whose surface is flat after day-to-day growth are referred to as type I, and as shown in Fig. 20, the knee-shaped product 7 does not refer to a crystal having a concavo-convex shape as a type II to distinguish the two. 135248.doc 200937499 When the ratio of the fifth group/second group R5,3 is as low as 1~l〇, and the growth temperature (substrate temperature) is l〇4〇°C~1070°C, 'formation of π-type crystal 5' (Figure 20). The surface of the dislocation-collecting crystallization region 5h is low, and a facet 5f is subsequently formed on the surface thereof, after which a dislocation-reducing facet-growing crystal region 5z is generated below the facet 5f. This figure shows a cross-sectional view in the case where a stripe type mask is used but the surface is not limited. In other words, in the case of the stripe mask, the c-plane 5c is sometimes present at the intermediate position between the adjacent masks 3, and the dislocations are reduced (the surface-grown crystal region 5y. In the case of the dot mask) , must exist (: face 5 (;, and there is a dislocation below the c face 5c to reduce the c-plane growth crystallization region 5y. The ratio of the right fifth group / the second group R5, 3 as low as 丨 ~ ..., growth temperature (substrate The temperature is as long as 1090. (: ~1150. (:, 丨-type crystal 5 is formed (Fig. 21). The surface is flat, and there is a dislocation crystal region 讣 directly above the mask, which is exposed on the surface. The other part is mixed with dislocations to reduce the facet growth crystallization region 5z and the dislocation reduction C-plane growth crystallization region 5y. The growth temperature (substrate temperature) is between the growth temperature of the crystallization and the growth temperature t of the crystallization. When (1G7() &lt;t~1()9(rc), a mixed crystal of Ζ-type and Π-type is formed, 5° is formed into a trapezoidal shape crystal 5 as shown in Fig. 24. A dislocation set is formed on the mask. Crystallization region 5h. Dislocation reduction on the exposed portion U of the base substrate k reduces the facet growth crystal region 5z, and the dislocation reduction C The growth crystallization region 5y. The study has been generally known for the dislocation crystallization region 5h generated on the mask. Take w 〆 『, mouth, ,, mouth and day heart. Dislocation crystallization region 5h part of the dislocation concentration There are three different situations in the dislocation set crystallization region 5h. The dislocation 隼~" 'The crystallization region of the nucleus is only called the nuclear phylogeny becomes 13524S.doc -41 - 200937499 = This dislocation is called the crystallization region outside Polycrystalline layer. The other part (dislocation minus == two d-forms becomes nine relative to the growth crystallization region 々) and the inclined single-domain shape 5Z and the dislocation reduction (10) system, the upward direction of the single 曰. Here 'other parts As a sloping layer, the symmetry-combined crystallization region 5h is called the 匮-shaped system, and the L-axis of the single crystal whose C-axis faces downward! \'The direction of crystallization is relative to other parts (the dislocation reduces the facet ❹

^ The case of the second day of the area 5z and the dislocation reduction c-plane growth crystallization region (9). Such a dislocation set crystallization region 5h is referred to as an inversion layer. The inversion layer has the largest force for closing dislocations. In turn, the inclined layer has the force to seal the 1 dislocation. The polycrystalline layer has the least force to pre-catch dislocations. ” 0 (1 2 ribs, 3 to 5 μmη spacing; narrowing of the exposed portion) compared to the point-type or stripe type 'the distance between the masks disposed on the base substrate is quite large' and the exposed portion is quite large. A structure consisting of a difference in facet growth, a 5a dislocation in the ^aa region, a C-side growth crystallization region 5y, and a dislocation-collected crystallization region 5h. As shown in Fig. 25, in the case of a stripe mask The size of the mask 3 is as follows. The width 〇3 of the covering portion of the mask 3 of the base substrate 1 is ι〇μιη to ι〇〇μηη, and the interval 1) of the adjacent covering portions is set to 25〇μηη~2 As shown in Fig. 26, in the case of a dot mask, the size of the mask 3 is as follows, and the diameter of the covering portion of the mask 3 of the base substrate 1 is set to 1 〇 μιη to ι〇〇μπι 'The interval Dw of the adjacent coating portions is set to 25 〇μπι 2 2 〇〇 () μιη. When the diameter of the covering portion (mask portion) is less than 10 |_1111, the formation of the dislocation crystallization region 5h is maintained and Not smooth, even if the dislocation set crystallized area is generated 135248.doc •42- 200937499 will also be in The way disappears. Even if the interval between the covered portions (mask portions) exceeds 2 μm, the dislocation-collecting crystal regions can be formed 5h/dislocation reduction, the facet-growing crystal region 5z/dislocation reduction, the C-plane growth crystal region Structure, but if the crystal is not thick enough, it is impossible to completely capture the error by using the dislocation set crystal region. When the size of the mask is small as in the case of ELO, the surface becomes flat (c surface) as the crystal grows. The effect of the mask will disappear immediately. However, if

If the size of the mask is large, the surface will never be flat even if the substrate growth continues. The facet growth method (Patent Documents 9, 1) maintains the facet until the end and reduces dislocations. Further, the problem is distortion and cracks. As described in the patent document u, when the iron-doped GaN is c-plane grown on a maskless base substrate and used as a separate substrate, it is cracked or significantly warped. In the present invention, the dislocations are reduced by reducing the facet growth crystallization region &amp; dislocation aggregation crystal region 5h. A structural portion such as a surface growth crystal region is mixed in the crystal to reduce the internal stress of the crystal. Therefore, using a mask having a large pitch Dp (large spacing Dw, wide width ;; DP=DS+Dw) mask to produce dislocation-reducing facet-grown crystalline regions &amp; dislocation-collecting crystallization regions 5h, dislocation reduction Structure such as C-side growth crystallization region 5y: However, if the facet is excellent, oxygen is incorporated, and the temperature is increased and the ratio of the fifth/second group Rs/3 is lowered to make it as flat as possible. Type 1 is used to make crystals in this way. More ideal is the ! type. ..., and the type II is also semi-insulating, and it is also in the range of light curvature and crack, so it can also be used in the scope of the invention. 135248.doc •43- 200937499 is formed on the base substrate as above The diameter (width) and the mask with a large interval are used to increase the substrate temperature to 1040. Above the ,, by the method, the fifth/second family scale 5, 3 is 1 to 10 The fifth-group raw material, the third-group raw material, and the iron compound gas raw material are grown on the base substrate by crystallizing the vaporized semiconductor, and then the base substrate is removed. Here, the method of removing the base substrate from the nitride semiconductor crystal 5 is performed. There is no particular limitation, and methods such as cutting and polishing can be used. The gist of the present invention is to produce an independent iron-doped nitride semiconductor crystal having a relatively small amount of oxygen, less warpage, and a low crack generation rate. (111) Forming a dot mask or a stripe mask using GaAs on the Ga surface as a base substrate. The mask is si〇2 and has a thickness of 60 nm to 2 〇〇 nm. The size of the mask (diameter or width Ds) , interval Dw, spacing Dp) The GaN film is grown on the mask by the HVPE method. First, a buffer layer is formed, and then a thick epitaxial growth layer is formed. The conditions of the buffer layer are as follows. The growth condition of the buffer layer is the substrate. The temperature is 5〇〇t&gt;c ~55〇, the GaCl partial pressure PGaC1 is 80 Pa(〇〇〇〇8 atm), the NH3 partial pressure is μ. kPa(0.16atm)' and the buffer layer thickness is 5〇nm The ratio of the fifth group/third group Rw of the buffer layer growth is 2〇〇. The present invention - although the growth temperature is proportional to the ratio of the fifth group to the third group ", but it is epitaxial growth (thick film) The value at the time of growth, and the ratio of the fifth/third group R5/3 at the time of formation of the buffer layer is not problematic. "Cracking" in the substrate refers to the case where the surface is 135248.doc -44· 200937499 with a length of 2 〇 or more, or a surface line of 3 or more 〇·5 mm~2·0 mm. In the case of cracks, or in the case of 21 or more 线3 mm~〇, 5 mm surface linear cracks. There is no crack in the surface, which means that there is no linear crack in the surface of 2.0 mm or more, and the linear crack of 5 mm to 2.0 mm is 2 or less, and the crack of 3 mm to 0.5 mm is 2 or less. The term "crack generation rate (%)" refers to the ❹ value obtained by dividing the number of blocks of the substrate on which the crack is generated by the number of blocks of the entire substrate and multiplying them. The so-called donor concentration CD is the degree of S η type impurity. Here, the body is not doped with Si, so the donor body is oxygen (〇). That is, the so-called donor concentration Cd means the oxygen concentration at which the donor energy is formed. Both the oxygen concentration and the iron concentration were measured by SIMS (Secondary Ion Mass Spectrography). The warpage of the substrate is expressed by the radius of curvature R (unit: m). Repeat a lot of experiments. Here, 45 samples are described. Attach the serial number of 1 to 45 to the sample. 1 to 36, 44, and 45 are embodiments of the present invention. Samples 37 to 43 are comparative examples. In the examples of Samples 1 to 36, 44, and 45, the sample material 21 was a sputum type (flat surface). Samples 22 to 36 and 45 were type II (concave-convex surfaces). • In the comparative example, the mask is not placed on the base substrate, but the crystallization is directly grown on the flat base substrate. Comparative Examples 37 to 43 are particularly experimental in order to confirm the influence of the mask, and are not prior art. There is also a case where the temperature, the ratio of the five/family group RS/3 is within the limits of the present invention. Table 1 shows the sample number, mask interval (unit: μιη), mask width 135248.doc •45·200937499 or diameter (unit: μΐΏ), growth temperature fC), PGa (indicating GaCI partial pressure, unit: kPa) , PN (indicating ammonia partial pressure, unit: kpa), substrate size (unit · mm or inch (&quot;), thickness (unit: μιη), core (dislocation set crystal region 5h) type, crystal face type, Fe concentration cFe (unit: cm·3), donor concentration Cd (corresponding to oxygen concentration, unit: cm·3), specific resistance (Qcm), crack generation rate (°/.), and curvature radius of warpage ( Unit: m) [Table 1] 135 135248.doc -46 - 200937499 ί' Ό wS &lt;Ν *η Ο 00 &lt;Γ&gt; σ\ «ο 00 »η ν〇»η Cs wS r-** » Ri Os »n (S &gt;ri (N wS o &lt;) 〇s *〇r- wS ΟΝ r*S mf*S ν-ν »η &lt;Ν uS i〇o »n *r&gt; »〇卜V-» m &gt;τΐ 〇»n r- »r&gt; 对 in 卜»η ο vd VO «S w-&gt; »n 〇uS ο «ο Ο »τί rt· \£&gt; ON 00 r—&lt ; VO CN 〇— • inch (Ν 00 CS (S » η so &lt;Ν 宕 ψ ψ-μ Bu Os 2 00 00卜σ\卜ν〇卜 2 ON (S ON (S 00 &lt;N CO (N fS 00 &lt;s 〇\ CN 00 &lt;N ON &lt;Ν C0 (Ν r- tn 00 00 & 00 VO § »n σ\ 00 Ίβρ| 〇ο X r^ X *Μ X 0 Ο X — X Ο r—^ s Ο ψ-* 〇X o X b F-^ o O o X ο X ο X ο 1·· * ο X η Ο X Ο »«Μ X « 〇XOX F&quot;·* 〇X ο Ο X o X 〇X r&gt; o X ο X ο X n 〇X o X s 〇A Ί o Τ&quot;&quot;&lt ; Ο X ο X b »—&lt; X obr^io X 〇〇X η r^ η Ο X «1 1»Μ X »»Η η Ο X r» Ο X r&gt; Ο rH η Ο X f\ Ο n 〇X r&gt;〇r&gt; o X n 〇X r» 〇X r&gt; o X η Ο X η Ο τ—^ η Ο X η Ο X ο X ο X o rv o X no X o X ο X ho X &gt;&gt; o »*H o X r&gt; Ο X η Ο XJ\ 〇X 7\ o X n 〇X r&gt; o X ο X ο X η Ο X η Ο ^―&lt; r» 〇X r \ o X o X o ο X η Ο 〇〇X v^t £ Ο X Ο X 卜 X ο Ο X »—Η ο Ο X Ο Ο «» &gt; Ο X &gt; oo X o F·^ oo 1 -^ bo X ο X ο X Ο X Ο ««Η Γ&quot;Η ο h ο X ΪΝ 〇*no X 0 〇X o X ο 云Λ o X Λ o Ϊ o X ί\ Ο X Λ ο t \ o Λ o 00 JN oo 00 »\ Ο ϊ ο ά Ο X ο Ο X o X Λ o Ϊ o X Λ Ο X Λ Ο ϊ Ο X ο X Π= ^ &gt;—4 - ΗΜ ΝΜ ΝΜ NM — NM Nb« »-«4 ΝΜ Μ ΝΝ HH KH HH HH S ss Μ - SM - &gt;—( y@ U 电 电 U v0 U \BU V0 U eMule »»4 ΜΗ 缕乡^ σ *赛赛|η#: 讳D$D 觫Q^D t 击t^t Q|B 觫黎(j〇〇^Β Q|D 〇^η 翁稼{^DD|D 讳〇|σ 讳^ { { 1 1 1 1 1 1 1 1 1 1 1 1 1 1 觫 ο ο ο oo ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο Oooooooo 〇〇 oooooo Ο ο ο ο ο 〇 〇 〇 Ο 〇 〇 〇 〇 Ο 〇 〇 〇 Ο ο rn rn rn rn (Ν(N (N (N &lt;N (S (Ν ( & CS &lt;Ν fN &lt;N CN (N (N fS &lt;N &lt;N (N CN CN (S CN (N ΓΜ (Ν &lt ;Ν &lt;Ν &lt;Ν (S (N CN (Ν (Ν (S (Ν Φ C0 S3 Ο Ο (ΰ S2 ο cd 52 Ο 1 PGa : lOkPa, ΡΝ : lOkPa | 1 PGa: 3.3 kPa, PN: lOkPa | 22 ο C〇§2 o C3 §2 Ο I PGa : 4kPa.PN : lOkPa | §2 o ed o &amp;〇&amp; o α 52 Ο «ΰ &amp; Ο Sa Ο S2 Ο cd S2 Ο (β §2 Ο o &lt;d &amp; 〇cQ §2 o 2a 〇2a Ο eQ 刍o §2 〇Sa o §2 Ο δ ο a 52 〇CQ o Λ §2 o cd &amp; o cd Sa Ο Λ Sa Ο rt §2 Ο 52 Ο &amp; o Λ §2 〇 52 〇&lt;Λ 22 Ο Λ §2 Ο &amp; ο cd S2 ο ? Λ §2 inch? 22 cd §2 Λ 22 cd 22 inch g, 52 inch Ql« VS 22 inch Z. Qu, § 2 Cu, Λ §2 〇. cd Sa Ye? 22 ? Λ 22 g «ϋ S3 vs g ψ 22 Ζ CU r C3 §2 ? 22 寸? 功 S3 寸 g c4 &amp; to g cd Sa Tf g Λ & tJ* ? ¢0 & g §2 ? (d 2a to g §2 g &amp; ? 22 g CO &amp; inch g C4 52 g CQ s ? §2 inch g 〆oi to g • a S3 &lt ;Ν S , 22 cu • ed § 2 inch ? α cu • a 52 &lt;a S3 when g 5a 〇Η rt & τΐ- cd Sa inch? ed & 々 cd S3 cd Ο Ον ¢4 Ο CLn Ο α δ 〇Η Λ cu cu Ο cu cd Ο cu cd o filH cd O cu β CU cd ϋ IX &lt;ϋ Ο CU &lt;ϋ Ο (X 〇α. a ο α. δ CO Ο (X vi o On Cd o cu cd o CL, Ο Oh s (X cd o a. ϋ Cu cu cu CU 5 cu cu Λ ο CU «5 O cu cd O Oh &lt;0 O fri Ο Λ ο Ον C&lt;3 Ο cm cd Ο cu cd o cu ed o a. ed o (X e4 Ο Oh Cd Ο ce Ο CU Λ Ο Ρμ Target G Ο ο » —Η *—Η ο Ο ο ο V&quot;M ο *&quot;Μ ο 1—4 ο ·—&lt;oor—&lt; oo ο ο ο ο » —Η ο ^Η ο 2 oos 沄o 沄Ο ο sos 沄ο ο s ί Η Ο S ο S Ο sos 〇sos 沄ο Ο SS ο 沄ο o S 1-M osoo Ο »* F-^ 〇ο Ο (UIH) m% S 沄沄沄沄o &lt;N or-&lt; 沄沄沄s 沄沄ο 1 I 1 t 1 I 1 沄^ms s?3 Ο ο 沄ο ν-&gt; ο ο 沄 沄ο ο 沄Ο 沄oooso 沄ο •η &lt;s ο JQ ο 2 Ο § Ο 1 ο ο o 沄o 沄o 沄ο ο o 沄ο ο 沄ο 沄ο ο 沄o 沄oso ο ο 锑Λ3 £ w meal £ ο ο ν*&gt; 实艏 (Ν m inch «ο Ό 卜 00 ON o ·—« »—4 rj 2 2 *η 卜 00 2 r3 ίΝ CN m (N «r&gt; (S \ 〇CN CN 00 (Ν σ\ &lt;Ν m (N ΓΛ CO ΓΛ »η ΓΛ \〇m Ρ; 00 m C\ cn ο qi 箐!〇对.47- I35248. Doc 200937499 [Example A: Example of semi-insulating substrate] [Sample 1 (Example; Type I)] On a GaAs substrate of 18 mm square, a mask spacer was formed and evaluated as 5 〇〇pm, mask width DS is a parallel stripe mask of 50 from „!. The sample is characterized in that an 18-square wafer is used as the base substrate. Forming a buffer layer _ after the GaN crystallized crystal growth. The crystal growth temperature Tq is 1 1 lot, NH3 partial pressure? Under the condition that 10 is kPa (〇1 atm) and the partial pressure p^c丨 is 4 (0.04 atm), epitaxial growth is carried out until the thickness is 4〇〇.

❹ On. On the parallel stripe mask having a mask width of 50 μm, a GaN crystal having a core width of 50 μηΐ2 parallel stripe core (dislocation set crystal region 5h) was formed. The GaAs substrate was processed to obtain a separate substrate of GaN crystal having a thickness of 4 μm. The ratio of the fifth/third family is 2 5 . The crystal-independent substrate comprises a parallel stripe core (dislocation set crystal region 5 h) having a core width Ds of 50 μΐη, a core spacing Dw* of 5 。. The crystal type of the core (dislocation aggregate crystal region 5h) is an inversion layer. The type of crystal face is the type of work. Because the growth temperature Tq is high, it becomes! type. The concentration of the donor is lx\〇15 cm·3. The value of the donor concentration is extremely low. The iron concentration cFe is 1 χΐ〇 π • cnT3. The amount of iron incorporated is small. The specific resistance is 1χΐ〇7 with claws. The insulation is slightly lower due to the lower iron concentration. However, even so, it can be used as a semi-insulating substrate. The crack generation rate is 4%. The crack generation rate is extremely low, which is the minimum value in the overall sample. The radius of curvature of the warp is 56 m. The warpage is very small. [Sample 2 (Example; Type I)] 135248.doc -48- 200937499 On a GaAs substrate having a diameter of 2 inches (50 mm), a mask interval Dw of 500 μm is formed, and a mask width 仏 is 5 〇 parallel. Stripe mask. After the buffer layer is formed, the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1110 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4 〇〇 μιη or more. Formed on a parallel stripe mask having a mask width of 5 〇μηι

The core width of the GaN crystal is 5 〇 μπΐ2 parallel stripe core (dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a separate substrate of GaN crystal having a thickness of 4 μm. The ratio of the fifth/third group R5,3 is 2.5. The GaN crystal-independent substrate includes parallel stripe cores (dislocation-collected crystal regions 5 h) which are repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it becomes a work type. The concentration of the donor body (: 13 is 1 &gt;&lt; 1 〇 15 cm·3. The value of the donor concentration is extremely low. The iron concentration CFe is 1 X 1 〇 17 cm·3. The amount of iron incorporated is small. The specific resistance is 1 X 1 〇7 Qcm. The insulation is slightly lower due to the lower iron concentration. However, even this can be used as a semi-insulating substrate. The crack generation rate K is 12%. The crack generation rate is extremely low, warpage The radius of curvature R is 5.2 m. The tortoise is very small. [Sample 3 (Example; 丨 type)] On a GaAS substrate having a diameter of 3 inches (75 mm), a mask interval Dw of 500 μm is formed, and a mask is formed. The parallel stripe mask having a width Ds of 50 μm is characterized in that the size of the substrate is large. After the buffer layer is formed, GaN crystals are crystal grown. The epitaxial growth temperature Tq is 丨丨丨〇. 〇, nh3 Pnh3 135248.doc •49· 200937499 10 kPa (0.1 atm), GaCl partial pressure PGaC 丨 4 kPa (0.04 atm), epitaxial growth until the thickness is 400 μηη or more. The mask width is 50 On the parallel stripe mask of μπι, a parallel stripe core with a core width of 50 μm is formed on the GaN crystal (dislocation set) Crystal region 5h). The GaAs substrate is removed to obtain a separate substrate of GaN crystal having a thickness of 4 〇〇μηι. The ratio of the fifth group/third group r5/3 is 2.5. The GaN crystal independent substrate is contained in μιη The parallel stripe core of the core width Ds and the core interval Dw of 500 μm is repeated (the dislocation set crystallization region 5 hp, the crystal type of the core (dislocation set 〇 crystal region 5h) is the inversion layer. The crystal face type is type I. The growth temperature Tq is high, so it is type I. The concentration of the donor body (^ is lxl〇is cm-3. The value of the donor concentration is extremely low. The iron concentration CFe is lxio丨7 cm·3. The iron incorporation is less. The specific resistance is 1 X 1 〇7 Qcm. The insulation is slightly lower due to the lower iron concentration. However, even this can be used as a semi-insulating substrate. The crack generation rate K is 18%. The crack generation rate is extremely high. Low. The radius of curvature of the warp is 6.0 m. The new curve is very small. [Sample 4 (Example; Type I)] 9 Mask spacing is formed on a GaAS substrate with a diameter of 2 inches (5 sides).

Dw is 500 μΐη, mask width ^ is 50 μηη &lt; parallel stripe mask. After forming the buffer layer, (10) crystallizes the growth temperature TqA - 111〇°C, NH3 partial pressure PnH3 is 10 kPa (〇.l atm), and GaC1 partial pressure pGaC1 is 4kPa (G.G4atm) Under the conditions, the insects are grown until the thickness is _ pm or more. Formed on a parallel stripe mask having a mask width of 50 μηι

The core width of the GaN crystal is 5 〇 μηη parallel hello Ρ 仃 仃 stripe core (dislocation set crystal region 5h). 135248.doc -50- 200937499 A GaAs substrate was removed to obtain a GaN crystal independent substrate having a thickness of 400 μm. The ratio of the fifth/third group R5,3 is 2.5. The GaN crystal independent substrate includes a parallel stripe core (dislocation set crystal region 5h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it is type I. The donor concentration 0〇 is 1x1〇h cm-3. • The value of the donor concentration is extremely low. The iron concentration CFe is 1 X 1 〇 16 cm_3. The amount of iron incorporated is small. The specific resistance is lxl 〇 6 Qcm. The insulation is slightly lower due to the lower concentration of ferroniobium. However, even in this case, it can be used as a semi-insulating substrate. The crack generation rate K was 12%. The crack generation rate is extremely low. The radius of curvature of the warp is 5.8 m. The distortion is very small. [Sample 5 (Example; Type I)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 μm (5 μm). After the buffer layer is formed, the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1110C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure pGaC1 β is 10 kPaP.1 atm), and epitaxial growth is performed until the thickness is 400 μηι or more*. A parallel stripe mask having a core width of 5 〇μηη formed on a parallel stripe mask having a mold width of 5 〇μιη (dislocation set knot)

: Crystal area 讣). The GaAs substrate was removed to obtain a separate substrate of GaN ^ crystal having a thickness of 400 μm. The ratio of the fifth/third family is 丨. The sample 5 is characterized by the ratio of the fifth/third family! . In the growth of GaN crystals, the case where the ratio Rw of the fifth group/third group is so low has not occurred. The GaN crystal independent group 135248.doc 51 200937499 The plate comprises a parallel stripe core (dislocation set crystal region 5h) repeated with a core width Ds of 50 μϊη and a core interval Dw of 500 μηι. The crystal type of the core (dislocation-collecting crystal region 5h) is an inversion layer. The crystal face type is type. Since the growth temperature Tq is high, it becomes a 丨 type "body concentration cm·3. The value of the donor concentration is extremely low. The iron concentration (:~ is lxl〇i6 cm-3. The amount of iron is less. The specific resistance is lxl〇6 nCm. The insulation is slightly lower, because the iron concentration is lower. However, even so, It is used as a semi-insulating substrate. The crack generation rate K is 12%. The crack generation rate is extremely low. The radius of curvature of the warp is 5.9 m. The composition is very small. [Sample 6 (Example; Type I)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width of 5 μmΠ2 was formed on a 2 inch (50 mm) GaAs substrate. After the buffer layer was formed, GaN crystal epitaxial growth was performed. Temperature D.

1110C, NH3 partial pressure PNH3 is 1 kPa (0.1 atm), GaCl partial pressure pGaU is 3.3 kPa (0.033 atm), epitaxial growth is carried out until the thickness is 400 μΠ1 or more. On the parallel stripe mask having a mask width of 5 Å μη, a parallel stripe core having a core width of 50 4 claws of GaN crystals (dislocation-collecting crystallization region 5h) was formed. The GaAs substrate was removed to obtain a separate substrate having a thickness of 4 〇〇 μπΐ2 • GaN crystal. The ratio of the fifth/third group R5/3 is 3. This sample is characterized in that the ratio of the fifth group/third group R5/3 is 3. The GaN crystal-independent substrate comprises a parallel stripe core (dislocation set crystallization region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 5 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type 1. Since the growth temperature Tq is high, it becomes a type. 135248.doc •52- 200937499 The donor concentration CD is lx l〇15 cm·3. The value of the donor concentration is extremely low. The iron concentration CFe is lxi0i6 cm.3. The amount of iron incorporated is small. Specific resistance

Dcm. The insulation is slightly lower due to the lower iron concentration. However, even this can be used as a semi-insulating substrate. The crack generation rate κ was 15%. The rate of crack production is extremely low. The curvature radius r of the warp is 5_8 m. Zhao Qu is very small 0 [Sample 7 (Example; Type I w on a GaAs substrate having a diameter of 2 inches (50 mm), forming parallel stripes with a mask interval Dw of 500 μm and a mask width Ds of 5 〇μΓη After forming a buffer layer, GaN crystal epitaxial growth is performed. The epitaxial growth temperature is 1110 C, the NH3 partial pressure PNH3 is 10 kPa (0.1 atm), and the GaCl partial pressure pGaC| is 4 kPa (〇.〇4 atm). Under the conditions, epitaxial growth is performed until the thickness is 4 〇〇μηη or more. On the parallel stripe mask having a mask width of 5 μm, a parallel stripe core having a core width of 5 μm is formed on the GaN crystal (dislocation) The crystallization substrate is collected 5h). The GaAs substrate is removed to obtain a separate substrate having a thickness of 4 Å. The ratio of the fifth group to the second group rs, 3 is 2.5. The GaN crystal independent substrate contains a core width Ds of 50 μm , the parallel stripe core of the core interval Dw of 5〇〇μιη (dislocation set crystal region 5h). The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is [[type ^ Due to growth, the donor concentration CD is lxlO15 cm·,

135248.doc The temperature Tq is high, so it becomes type I. The value of the body concentration is extremely low. Iron thick j more β specific resistance is 1x10&quot;仏•53· 200937499 substrate. The crack generation rate K was 26%. The crack generation rate is slightly lower. The curvature radius R of the warp is 5.6 m. The warpage is very small. The sample 7 is characterized by high insulation. [Sample 8 (Example; Type I)] On a GaAs substrate having a diameter of 2 inches (50 mm), a mask interval is formed. • 〇~ is 5〇〇μπι, and the mask width is μμηΐ2 parallel strip. mold. After the buffer layer is formed, GaN crystallized crystal grains are grown. Epitaxial growth was carried out under the conditions of a growth temperature of 1110 C for the crystal growth, 1 kPa (0.1 atm) for the NH3 partial pressure pNH3, and a partial pressure of PrCl **· O s C1 ❹ of 4 kPa (0.04 atm). The thickness is 400 μηι or more. On the parallel stripe mask having a mask width of 5 μm, a parallel stripe core having a core width of 50 μm of GaN crystal (dislocation-collecting crystal region 5h) was formed. The GaAs substrate was removed to obtain a separate substrate having a thickness of 4 〇〇 μπΐ2 GaN crystal. The ratio of the fifth/third group Rw is 2.5. The GaN crystal independent substrate comprises a parallel stripe core (dislocation set crystal region 5h) repeated with a core width ds of 50 μm and a core interval Dw of 500 μm. ^The crystal type of the core (dislocation set crystal region 5h) is reversed Transfer layer. The crystal face type is . Since the growth temperature Tq is high, it is type I. The donor concentration CD is lxio" cm-3. The concentration of the donor body is extremely low. The iron concentration CFe is 5xl019 cm·, the amount of iron incorporated is extremely large, and the specific resistance is 1χ1〇12 Qcm. The insulation is quite high. Insulation is better because the oxygen (donor) is less and the iron concentration is higher. It can be used as a semi-insulating substrate. The crack generation rate is 2〇%. The crack generation rate is slightly lower. The curvature radius of curvature is R. 5.9 m. The warpage is very small. The sample 8 is characterized by a particularly high insulation, 135248.doc • 54- 200937499 [sample 9 (example; i type)] on a 2 inch (50 mm) 2 GaAs substrate A mask spacer having a mask interval Dw of 500 μm and a mask width Dsg5〇 from the claw is formed. After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature is 1110 C NH3, and the knife pressure pNH3 is 1 〇kPa (0.1 atm), GaCl partial pressure pGaC| : 4 kPa (0·04 atm), epitaxial growth to a thickness of 400 μm or more. Parallel stripe mask with a mask width of 5 μm On, formed

The core width of the GaN crystal is 5 〇 μη ΐ 2 parallel stripe core (dislocation aggregate 眷 crystal region 5h). The GaAs substrate was removed to obtain a GaN crystal having a thickness of 4 μm, and the fifth substrate/second family scale 5/3 was 2.5. The GaN crystal-independent substrate i contains a striated stripe core (dislocation crystallization region 5h) which is repeated at a core width Ds of 50 μm and a core interval ο* of 5 μ. The crystal type of the core (dislocation crystal region 讣) is a polycrystalline layer. The crystal face type is 丨 type. Since the growth temperature Tq is high, it is type I. The body is C4lxl〇15 cm.3. 〇 = The value of body concentration is extremely low. The iron concentration CFe is lxl0"cm-3. Although iron is incorporated into the inner phase, the specific resistance is i X 1〇7 Qcm. The insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate is 16%. The crack generation rate is extremely low. The radius of curvature of the warp is "5·7 m. The face is very small. The sample was characterized in that the crystal on the mask was not an inversion layer but a polycrystalline layer. The crack, the curvature, the specific resistance, and the like are not significantly changed as compared with the case where the crystal on the mask is an inversion layer. [Sample 1 〇 (Example; Type I)] On a GaAS substrate having a diameter of 2 inches (50 mm), a mask interval was formed 135248.doc -55· 200937499

The Dw is 500 nm and the mask width Ds is 50 μηΐ2 parallel stripe mask. After the buffer layer is formed, GaN crystallized crystal grains are grown. The epitaxial growth temperature Tq is 1110C, the NH3 partial pressure PNH3 is 10 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4 〇〇 μηι or more. On the parallel stripe mask with a mask width of 50 μΓ, a parallel stripe core with a core width of 5 μm is formed with a GaN crystal (dislocation junction)

· _ Crystal region 5h) ^ Remove the GaAs substrate to obtain a separate substrate of GaN crystals having a thickness of 4 μm.第五 The ratio of the fifth/third family is Rs/3 of 2.5. The GaN crystal independent substrate includes a parallel stripe core (dislocation set crystal region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is inclined. Floor. The crystal face type is 丨 type. Since the growth temperature Tq is high, the value of the donor concentration is lxl〇ls em_3. The value of the donor concentration is extremely low. The iron concentration (: is 1) &lt;1〇丨7 cm-3. The amount of iron incorporated is quite large. The specific resistance is 1 X 1 〇7 i2 cm. The insulation is not high. However, it can also be used as a semi-insulating property. The substrate has a crack generation rate κ of 丨7%, a crack generation rate of extremely low, and a curvature radius R of 5.9 m. The warpage is very small. The sample 1 is characterized in that the crystal on the mask is not inverted. The layer is an inclined layer. Cracks and warpage, specific resistance, and the like are not significantly changed as compared with the case where the crystal on the mask is an inversion layer. [Sample 11 (Example; Type I)] The diameter is 2 inches. On the GaAs substrate of (50 mm), a mask gap Dw of 500 μm and a mask width of 1 〇μηΐ2 parallel stripe mask were formed. The sample 11 was characterized in that the stripe mask width Ds was as narrow as 1 〇. 1 mm). Shape 135248.doc -56 - 200937499 After the buffer layer is formed, GaN crystal epitaxial growth is carried out. The epitaxial growth temperature Tq is 1110 C, NH3 is divided, PNH3 is 1 〇 kPa (〇. 1 atm), GaCl Under the condition of pressure pGaC1 of 4 kPa (0.04 atm), epitaxial growth is carried out until the thickness is 4 〇〇μηι or more. The mask width is 1 〇 μιη parallel On the pattern mask, a parallel stripe core having a core width of 1 〇μηι of GaN crystal (dislocation crystal-region 5h) is formed. The GaAs substrate is removed to obtain a GaN junction having a thickness of 400 μm. The family/third group ratio Rw is 2.5. The GaN crystal-independent substrate comprises 平行 a parallel stripe core (dislocation set crystal region 5 h) repeated with a core width Ds of 10 and a core interval Dw of 500 μm. The crystal type of the dislocation aggregate crystal region 5h) is an inversion layer. The crystal plane type is type I. Since the growth temperature Tq is high, it is type 1. The donor concentration 〇〇 is lxl〇i5 cm_3. Extremely low. The iron concentration CFe is 1 x lO17 cm·3 » The amount of iron is quite large. The specific resistance is 1 X 107 Qcm. The insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K is 17%. The crack generation rate is extremely low. The curvature radius R of the desired curve is 5.2 m. The warpage is very small. If the cover width Ds is small, it may cause the light curve to be larger or smaller, but even if the mask width Ds is set For 10 μm, the warpage will not be too large. Regardless of the mask width It is ⑺ • μηι, or 50 μπι, light music or less: [Sample 12 (Example; the I Type)] 'on a GaAs substrate of 2 inches in diameter (5〇 mm) of' forming a mask spacer.

A parallel stripe mask having a Dw of 500 μm and a mask width Ds of 25 μm "This sample 12 is characterized in that the stripe mask width Ds is as narrow as 25 μηι (〇.〇 25 mm). After the buffer layer is formed, GaN crystal epitaxial growth is performed. Epitaxial growth temperature Tq is 135248.doc -57- 200937499 mrC, NH3 partial pressure '3 is 10 〇1 handsome _ partial pressure pGaCi is 4kPa (〇.〇4atm), the crystal growth is carried out until the thickness is 4 〇〇μΐη or more. On the parallel stripe mask having a mask width of 25 μm, a parallel stripe core (dislocation aggregate crystal region 5h) having a core width of 25 (four) of GaN crystal was formed. The GaAs substrate was removed to obtain a crystallized individual substrate having a thickness of 4 Å. The ratio of the fifth/third group R5/3 is 2.5. • The GaN crystal-independent substrate comprises a parallel stripe core (dislocation set crystal region 5 domain 5h) repeated with a core spacing Dw of a core width Ds 5 〇〇 μη of 25 μm. The crystal type of the core ~ (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it becomes (5). The donor concentration 〇^ was 1&gt;&lt; 1015 cm·3. The value of the donor concentration is very low. The iron concentration CFe is IxlO17 cm·3. The amount of iron incorporated is quite large. The specific resistance is ΐχΐ〇7 ncrn. Insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K is 19/. . The crack generation rate is extremely low. The radius of curvature of the face curve is 5.2 m. The warpage is very small. If the mask width Ds is small, the warpage may be larger or smaller, but even if the mask width Ds is set to 25 μm, the warpage will not be excessive. Regardless of the mask width Ds of 25 μm, or 50 μm, the clock curvature is not much different. • [Sample 13 (Example; Type I)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 100 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). The sample 13 is characterized in that the stripe mask width Ds is extended to 丨〇〇 μηη (〇" mm). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is lll〇°C, the NH3 partial pressure 卩 is 10 kp^.i atm), and the GaC1 is 135248.doc -58- 200937499. The pressure PGaci is 4 kPa (0.04 atm). Grow until the thickness is above 400 pm. On the parallel stripe mask having a mask width of 100 μηΐ2, a parallel stripe core having a core width of 1 GG handsome (dislocation set crystal region 5h) was formed. The GaAs substrate was removed to obtain a separate substrate of GaN crystal having a thickness of 400 μm. The ratio of the fifth/third family ha is 2.5. The GaN crystal-independent substrate comprises parallel stripe cores (dislocation-gathered crystal regions 5h) which are repeated with a core width Ds of 100 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is a reverse layer. The crystal face type is type I. Since the growth temperature Tq is high, it becomes ι type. The donor concentration CD is 1X1 〇 15 cm·3. The value of the donor concentration is extremely low. The iron concentration CFe is lxio 17 cm-3. The amount of iron incorporated is quite large. The specific resistance is 1 &gt;&lt; 1 〇 7 Qcm. Insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 19%. The crack generation rate is extremely low. The radius of curvature of the warp is 5.1 m. The warpage is very small. If the mask width Ds is large, the warpage may be larger or smaller, but even if the mask width Ds is set to 1 〇〇 μιη, the warpage will not be excessive. The flawless mask width Ds is 100 μm or 5 〇 μπι, and the warpage is not much different. [Sample 14 (Example; Type I)] A parallel stripe mask having a mask interval Dw of 250 μm and a mask width of 5 μm was formed on a 2 Å (5 〇 mm) 2 GaAs substrate. The sample 14 is characterized in that the mask interval dw is as narrow as 250 Ω (0.25 mm). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is iiioc, nh3 partial pressure? _ is 10 kPa (01 atm), GaC1 partial pressure is similar to I35248.doc -59- 200937499 is 4kPa (0. 〇 4at condition, the crystal growth is carried out until the thickness is more than ΓΠ. The mask width is 50 μηι On the parallel stripe mask, a parallel stripe core of a GaN crystal having a core width of 50 claws (dislocation-collecting crystal region 5h) is formed. The GaAs substrate is removed to obtain a separate substrate having a thickness of 4 μm 2 GaN crystal. The ratio of the five-group/third-group R5/3 is 2.5. The GaN crystal-independent substrate comprises a parallel stripe core repeated with a core width Ds of 50 μΐπ and a core interval Dw of 250 μηι (dislocation set crystal region 5h^ The crystal type of the core (dislocation crystal region 5h) is an inversion layer. The crystal surface type is a type. Since the growth temperature Tq is high, it is a type. The donor concentration Cd is lxl〇ls(10)-3. The concentration of the concentration is low. The iron concentration CFe is ixio]7 cm-3. The iron is mixed in a large amount. The specific resistance is 1 X 1 〇7 ncm. The insulation is not high. However, it can be used as semi-insulating. The substrate has a crack occurrence rate of 丨8%, and the crack generation rate is extremely low. The curvature radius R of the distortion 6.0 m. The warpage is very small. If the mask spacing Dw is small, the warpage may be smaller and the crack may be further reduced, but the meditation and crack are not much different regardless of the mask interval Dw of 500 μηι or 250 μηη. [Sample 15 (Example: Type I)] A parallel stripe mask having a mask interval Dw of 75 0 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). The sample 15 is characterized in that the mask interval Dw is extended to 75 〇μηι (〇75 mm). After the buffer layer is formed, the GaN crystal is epitaxially grown. On the parallel stripe mask having a mask width of 5 〇μΓ, GaN is formed. The core of the crystal has a width of 50 μιη of parallel stripe core (dislocation set crystal region 5h). Epitaxial growth temperature Tq 135248.doc -60- 200937499 is 1110 ° C, NH3 partial pressure pNH3 is 1 kPa (0.1 atm) After the GaCl partial pressure PGac is 4 kPa (0.04 atm), epitaxial growth is performed until the thickness is 400 μm or more. The GaAs substrate is removed to obtain a thickness of 400 μηι.

A separate substrate for GaN crystals. The ratio of the fifth/third group Rs/3 is 25. The GaN crystal-independent substrate comprises a parallel stripe core (dislocation set crystal region 5h) which is repeated with a core width Ds of 5 〇 μπι and a core interval Dw of 75 〇卩. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it becomes a type. The donor concentration CD is lxlO15 cm-3. The value of the donor concentration is low. The iron concentration CFe is lxlO17 cm·3. The amount of iron incorporated is quite large. The specific resistance is 1χ1〇7 Qcm. Insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 18%. The crack generation rate is extremely low. The radius of curvature of the quasi music is 5.9 m. The warpage is very small. If the mask interval Dw is large, the warpage may be larger'. However, even if the mask interval Dw is 750 μm, the light curvature does not become large. [Sample 1 6 (Example; Type I)] A parallel stripe mask having a mask interval Dw of 1000 μm and a mask width of 5 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). The sample 16 is characterized in that the mask interval Dw is extended to 1 〇〇〇μιη (1 (1). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is 11 KTC, and the NH3 partial pressure P is 10 kPa ( 〇"_), under (4) pressures of 4kPa (0. (4atm)), the growth of the crystals until the thickness is more than ^μηη. On the parallel stripe mask with a mask width of 50, formed A parallel stripe core with a core width of 5 μm of G a N crystal (dislocation set crystal region 5h). The GaAs substrate is removed to obtain a thickness of 4 〇〇 ^ ^ 135248.doc • 61 · 200937499 Crystallization The independent substrate. The ratio of the fifth group to the second group Rs/3 is 2.5. The GaN crystal independent substrate comprises a parallel stripe core which is repeated with a core width Ds of 50 μm and a core interval Dw of 1 〇〇〇μηι. (Dislocation crystal region 5h) The crystal type of the core (dislocation crystal region 5h) is an inversion layer. The crystal surface type is type I. Since the growth temperature Tq is high, it is a type 1 donor concentration. Is lxl〇! 5 cm-3. The value of the donor concentration is lower. The iron concentration CFe is lxl0] 7 cm·3 ^ iron incorporation The specific resistance is 1 X 1 〇7 Qcm. The insulation is not high. However, β can also be used as a semi-insulating substrate. The crack generation rate is 7%. The crack generation rate is extremely low. The curvature radius of warpage R is 5.7 m. The warpage is very small. If the mask interval Dw is large, the warpage may become large, but even if the mask interval Dwg 1 〇〇〇 μπι, the warpage does not become large. [Sample 17 (Example ; Type I)] On a GaAs substrate having a diameter of 2 inches (50 mm), a parallel stripe mask having a mask interval Dw of 1500 μm and a mask width of 1 μm of 5 〇μπΐ2 is formed. The sample 17 is characterized by masking The die spacing Dw is extended to 15 〇〇μπι〇.5 melon (4). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is 1110 C, and the NH3 partial pressure pNH3 is 1 〇 kPa (0.1 atm), GaCl Partial pressure pGaC1 • Under 4 kPa (〇, 〇 4 atm), epitaxial growth is carried out until the thickness is 400 • μηι or more. On the parallel stripe mask with a mask width of 5 μμπι, GaN crystals are formed. The core stripe width is 5〇μηι parallel stripe core (dislocation set crystal region 5h). A substrate having a thickness of 4 Å crystals. The ratio of the fifth group to the second group R5, 3 is 2.5. The GaN crystal independent substrate comprises 135248.doc -62- 200937499 with a core width of 50 μm Ds, a core of 1500 μm A parallel stripe core (dislocation set crystal region 5h) repeated at intervals dw. The crystal type of the core (dislocation set person's dry crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it is type I. The concentration of the donor body is "^^^5.

The value of the donor concentration is low. The iron concentration CFe is lxlO17 cm.3. The amount of iron is quite large. The specific resistance is 1 X 1 〇 7 Qcm. Insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 19.9%. The rate of crack generation is extremely low. The curvature radius of the warp is 3.9 and the warp is slightly larger. The reason why the light curve is larger is that the mask interval Dw is large (Dw = 1 500 μιη). The substrate of the sample can also be used when the maximum radius of curvature is allowed to be 2 m to 3, 5 claws. When the radius of curvature of the maximum warpage was allowed to be 4 m to 5 claws, the sample failed. The allowable warpage value varies depending on the purpose. [Sample 1 8 (Example; Type I)] Forming a mask interval on a 2 Å (50 mm) 2 GaAs substrate

A parallel stripe mask having a Dw of 2000 μΐη and a mask width Ds of 5 μm. The sample 18 is characterized in that the mask interval Dw is extended to 2 〇〇〇μιη (2, after the buffer layer is formed, the GaN crystal twins are grown. The crystal growth temperature is llioc, and the NH3 partial pressure pNH3 is 1 kPa (〇. l atm), GaC1 partial pressure is 4kPa (〇.〇4atm), the crystal growth is carried out until the thickness is 4〇〇μπι or more. On the parallel stripe mask with the mask width of 5〇μηι, GaN is formed. The core width of the crystal is 5G _ parallel stripe core (dislocation set crystal region 5h). The GaAs substrate is removed to obtain a separate substrate with a thickness of (10) crystal. The ratio of the fifth group to the second group R5/3 is 2.5. The GaN crystal independent substrate comprises a core width Ds of 5 〇μηΐ, a core of 135248.doc • 63·200937499 core of 2000 μm (dislocation set crystal region 5h).

The knot of the parallel stripe core 丨 core (dislocation set crystallization region 5h) repeated at intervals Dw ® (DW=2〇〇〇 μΓη). When the maximum warpage is allowed, the radius of curvature is 2 m~3 m.

In the case of the It shape, the substrate of the sample can also be used. When the radius of curvature of the maximum distortion is allowed to be 3.5 m to 5 m, the sample is unacceptable. The value of the allowable warpage varies depending on the purpose. [Sample 19 (Example: Type I)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the formation of the $buffer layer, the GaN crystal is epitaxially grown. When the epitaxial growth temperature Tq is 1110 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure pGaC1 is 4 kPa (0.04 atm), the epitaxial growth is performed until the thickness is 4 〇〇 • μιη or more. . On a parallel stripe mask having a mask width of 50 μm, formed with

The GaN crystal has a core stripe width of 50 μηη parallel stripe core (dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 μm. The ratio of the fifth/third group R·5,3 is 2.5. The GaN crystal-independent substrate comprises a flat rib nucleus ~ (dislocation crystallization region 5h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type. Since the growth temperature Tq is high, it becomes a sputum type, and the concentration of the donor body is 丨^7(10)·, and the value of the donor concentration is relatively high. Iron concentration (::1^ is 1&gt;&lt;1〇]7(;111.3. Incorporation of iron# When the specific resistance is 1x1Q5 Qem. The insulation is extremely low. Even so: it can also be used as a semi-insulation. The substrate has a crack rate of 24%. The crack is slightly generated, but it is still a semi-insulating substrate that can be used. The radius of curvature R of the warp is 5.5 m ^the distortion is small. ® [Sample 20 (Example; Type I)] A parallel stripe mask with a mask spacing Dw of 500 μm and a mask width Ds of 50 μm is formed on a 2 inch (50 mm) 2 GaAs substrate. After the buffer layer is formed, the GaN crystal is epitaxially formed. Growth. The epitaxial growth temperature Tq is 1110C, the NH3 partial pressure PNH3 is 1 kPa (〇" atm), and the GaC1 partial pressure p~ci is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4〇. 〇μιη or more. On a parallel stripe mask having a mask width of 5 〇μηι, a parallel stripe core having a core width of 50 μπι of GaN crystals (dislocation crystallization region 5h) is formed. The GaAs substrate is removed to obtain a thickness. It is a separate substrate of 4 〇〇pmiGaN crystal. The ratio of the fifth group to the second group Rw is 2.5. The GaN crystal independent substrate Included: Parallel stripe core (dislocation set crystal region 5h) repeated with a core width Ds of 50 μηη and a core interval Dw of 500 μηι 〇 The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The surface type is type. Because the growth temperature Tq is high, it is type I. The concentration of the donor body (^ is lxl〇n cm_3. The value of the donor concentration is quite high. The iron concentration CFe is lx 10]9 cm·3. More than 135248.doc -65- 200937499 iron. The specific resistance is 1 X 1 〇7 Qcm. The insulation is not too high. Even so, it can be used as a semi-insulating substrate. The crack generation rate K is 16%. Less 'good semi-insulating substrate. The radius of curvature r of the warp is 5 2 m. The surface curvature is small. [Sample 21 (Example; zs)] - GaAs with a diameter of 2 inches (50 mm) On the substrate, a parallel stripe mask with a mask spacing 'DwS 500 and a mask width Ds of 50 μm is formed. After the buffer layer is formed, 'the GaN crystal crystallites are grown. First, the growth temperature of the stray crystals is © 1050 C, NH3. Partial pressure PNH3 is 10 kPa (0.1 atm), GaCl partial pressure

Pcaci is 4 kPa (0.04 atm), and after the growth of the crystallites until the thickness is 400 μm or more, the epitaxial growth temperature Tq is 11 〇 (rc, Nh3 partial pressure PNH3 is 10 kPa (0.1 atm), GaCl The pressure of pGaC| is 4 kPa (0.04 atm), and the epitaxial growth is performed until the thickness is 1000 μΓη. On the parallel stripe mask with a mask width of 50 μη, the core width of the GaN crystal is 50 μηι. Parallel stripe core (dislocation set crystallized region 5h). Except • De-GaAs substrate 'self-cut GaN 〇 〇 〇 GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN GaN The ratio of the third group Rw is 2.5. The GaN crystal independent substrate comprises: a parallel stripe core (dislocation set crystal region 5h) which is repeated with a core width Ds of 50 μηη and a core interval dw of 500 μηι. The crystal type of the aggregate crystal Q domain 5h) is an inversion layer. The crystal surface type is a work type. Since the growth temperature Tq is high, it is type I. The donor concentration is C]^lxl〇i7 cm-3. The value is quite high. The iron concentration CFe is 5xl019 cm·3. More than 1. The specific resistance is lxl 08 Qcm. The insulation is slightly higher. It can be used as a semi-insulating 135248.doc -66 - 200937499 substrate. The crack generation rate K is 27%. There are quite a lot of cracks on the semi-insulating substrate, but It is still usable. The radius of curvature of the warp is 5 3 m. The warpage is small. [Sample 22 (Example; n-type)] A mask is formed on a GaAs substrate having a diameter of 2 inches (50 mm). The spacing Dw is 500 μm, and the mask width 〇8 is 5 〇 from the parallel stripe mask of the claw. After the buffer layer is formed, 'the GaN crystal crystal growth is grown. The crystal growth temperature is 1050 C, and the NH3 partial pressure pNH3 is 1. 〇kPa(0_l atm), GaCl partial pressure pGaCi

Epitaxial growth was carried out under conditions of 4 kPa (0.04 atm) until the thickness was 4 〇〇 μπι or more. On the parallel stripe mask having a mask width of 5 μm, a parallel stripe core (dislocation aggregate crystal region 5h) having a core width of 5 〇 μη of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate of GaN crystal having a thickness of 400 μm. The ratio of the fifth/third group Rs/3 is 2.5. The GaN crystal-independent substrate includes a parallel stripe core (dislocation-collecting crystal region 5h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is . Since the growth temperature Tq is slightly lower, it becomes a Π type. The application concentration Cd was lxl〇i5 cm-3 ^ The value of the donor concentration was extremely low. Iron concentration CFe* 1 X 1 〇 17 cm·3. The amount of iron incorporated is quite large. The specific resistance is 1 X1 〇 7 Qcm. Insulation is not too high. However, even this can be used as a semi-insulating substrate. The crack generation rate is 丨7〇/〇. The crack produces less than a good semi-insulating substrate. The curvature radius R of the warp is 5.0 m. The new song is smaller. [Sample 23 (Example; π type)] 135248.doc -67- 200937499 On a GaAs substrate having a diameter of 2 inches (50 mm), a mask interval Dw of 500 μm and a mask width Ds of 50 μm were formed. Parallel stripe mask. After the buffer layer is formed, the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1050 ° C, the NH 3 partial pressure PNH 3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 400 μm or more. On the parallel stripe mask having a mask width of 5 〇 μη, a parallel stripe core (dislocation crystallization region 5h) having a core width of 5 〇 μπι of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate of GaN ® crystals having a thickness of 400 μm. The ratio of the fifth/third group R5/3 is 2.5. The GaN crystal independent substrate includes a parallel stripe core which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm (dislocation set crystal region 5 hp, crystal type of the core (dislocation set crystal region 5h) is an inversion layer The crystal surface type is 卩 type. Because the growth temperature Tq is slightly lower, it is π type. The donor concentration (^ is lxl〇i5 cni·3. The value of the donor concentration is extremely low. The iron concentration CFe is 1x1016 cm·3. The amount of iron incorporated is quite large. The specific resistance is 1 X 1 〇 6 Qcm. The insulation is slightly lower, but even if it is so loud, it can be used as a semi-insulating substrate. The crack generation rate K is 13.3%. A good semi-insulating substrate. The radius of curvature of the fascinating curve is 5 5 • m. The enchantment is small. [Sample 24 (Example; Type II)] GaAs substrate with a diameter of 2 inches (50 mm) A parallel stripe mask having a mask interval Dw of 500 μm and a mask width of Dsg 50 μΓ is formed. After the buffer layer is formed, 'the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1050 C, and the NH3 partial pressure pNH3 is 1 〇. kPa (0· 1 atm), GaCl partial pressure pGaC1 135248.doc -68 - 200937499 is 4 kPa (0.0 Under the condition of 4 atm), epitaxial growth is carried out until the thickness is 400 μπι or more. On the parallel stripe mask with a mask width of 50 μπι, a parallel stripe core with a core width of 50 μπι is formed on the GaN crystal (dislocation set) Crystallization region 5h). The GaAs substrate is removed to obtain a GaN crystal independent substrate having a thickness of 400 μm. The ratio of the fifth group to the third group R5/3 is 2.5. The GaN crystal independent substrate contains - a core width of 50 μm Ds, 500 μπι core spacing Dw and repeating parallel stripe core (dislocation set crystal region 5h). The crystal type of the core (dislocation crystallisation® region 5h) is the inversion layer. The crystal surface type is type II. The growth temperature Tq is slightly lower, so it is type II. The donor concentration CD is lxlO17 cnT3. The value is quite high. The iron concentration CFe is lxlO19 cm_3. The iron is incorporated in a large amount. The specific resistance is 1 X 107 Qcm. It is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K is 16%. The crack is less generated and is a good semi-insulating substrate. The curvature radius R of the warpage is 5.7 m. The warpage is small. Sample 25 (Example; Type II)] A parallel stripe mask having a mask spacing Dw of 500 μm and a mask width Ds of 50 μm is formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the buffer layer is formed, * GaN crystal crystallites are grown. The crystal growth temperature Tq is 1.050 ° C, the NH3 partial pressure PNH3 is 10 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 400 μm or more. Formed on a parallel stripe mask having a mask width of 50 μm

The GaN crystal has a core stripe width of 50 μηη parallel stripe core (dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 μm. 135248.doc -69- 200937499 The ratio of the fifth/third family Rw is 2.5. The GaN crystal-independent substrate includes a parallel stripe core (dislocation-collecting crystal region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μΓ. The crystal type of the core (dislocation crystal region 5 h) is an inversion layer. The crystal face type is n type. Since the growth temperature Tq is slightly lower, it becomes a π type. The concentration of the donor body (^ is lxl〇i7 cm-3. This value is quite satisfactory. The iron concentration CFe is 5x 1019 cm.3. The iron is incorporated in a very large amount. The specific resistance is 1 X 108 Qcm. The insulation is slightly higher. As a semi-insulating substrate, the crack generation rate K is 29%. This value is quite large, but it is still a useful substrate. 曲率 The curvature radius of the warp is 5.3 m. The warpage is small. [Sample 26 (Example; II Type)] A parallel stripe mask with a mask spacing Dw of 500 μm and a mask width Ds of 50 μηι is formed on a GaAs substrate having a diameter of 2 μm (50 mm). After the buffer layer is formed, the GaN crystal is epitaxially formed. Growth. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure pG C1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4〇〇. ❹ μηι or more. Formed on a parallel stripe mask with a mask width of 50 μm

The core of the GaN crystal has a width of 50 μηι parallel stripe core (dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 4 μm. The ratio of the fifth/third group Rs/3 is 2.5. The GaN crystal-independent substrate includes a parallel stripe core (dislocation-concentrated crystal region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set sister crystal region 5h) is an inversion layer. The crystal face type is n type. Since the growth temperature Tq is slightly lower, it becomes type II. The concentration of the donor body is lxl〇i9 cm-3 ^ The value of 135248.doc -70· 200937499 is extremely high. The iron concentration cFe is 7xl0i9cm-3. The amount of iron incorporated is extremely large. The specific resistance is 1 X l〇5 and the insulation is extremely low. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 29%. This value is quite large, but it is still a useful substrate. The curvature radius r of the warp is 6. 〇 m. The warpage is small. [Sample 27 (Example: Π type)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width of D05O μη was formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the buffer layer is formed, GaN is crystallized for crystal growth. The crystal growth temperature is ❹ 1 〇 5〇C, NH3 partial pressure PNH3 is 1 〇kPa (0.1 atm), GaCl partial pressure pG C1 is 4 kPa (0.04 atm), epitaxial growth is carried out until the thickness is 4〇〇μηι or more. On the parallel stripe mask having a mask width of 50 μm, a parallel stripe core (dislocation aggregate crystal region 5h) having a core width of 50 μm of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 Å. The ratio of the fifth/third group Rs/3 is 2.5. The GaN crystal-independent substrate includes a parallel stripe core (dislocation-collecting crystal region 5h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type II. Due to growth • The temperature Tq is slightly lower, so it is type II. The donor concentration CD was lx 1019 cm·3. This: The value is extremely high. The iron concentration CFe is 8xl019 cm·3. The amount of iron incorporated is extremely large. , the specific resistance is 1 X 107 Qcm. Insulation is not high. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 28%. This value is quite large, but it is still a useful substrate. The curvature radius R of the warp is 5.1 m. The warpage is small. [Sample 28 (Example; Type II)] 135248.doc •71 _ 200937499 On a GaAs substrate having a diameter of 2 inches (50 mm), a mask interval Dw of 500 μm and a mask width Ds of 50 μm were formed. Parallel stripe mask. After the buffer layer is formed, the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4 〇〇 ' or more. On the parallel stripe mask having a mask width of 5 〇 μη, a parallel stripe core (dislocation crystallization region 5h) having a core width of 50 μm of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate having a thickness of 4 μm. The ratio of the fifth/third group Rw is 2.5. The GaN crystal-independent substrate comprises a parallel stripe core (dislocation set crystal region 5 h) which is repeated at a core width Ds of 50 μm and a core dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is π type. Since the growth temperature Tq is slightly lower, it becomes a Π type. The donor concentration Cd is 1χ1〇π cm_3. This value is quite good. The iron concentration 0^ is 1 X 1 〇 17 cm·3. The amount of iron exchange is slightly less. The specific resistance is 1 X 105 ncm. Insulation is extremely low. However, it can also be used as a semi-insulating substrate. The crack generation rate K was 23°/〇. This value is quite large, but it is still a useful substrate. The curvature radius R of the warp is 5.7 m. The warpage is small. • [Sample 29 (Example; Type II)]: A mask stripe was formed on a GaAs substrate having a diameter of 2 inches (50 mm). • A parallel stripe mask with a Dw of 500 μm and a mask width of 5 μm. . After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature is 1050 C, the NH3 partial pressure is 1 kPa (〇.l atm), and the GaCl partial pressure pGaC1 is 4 kPa (0.04 atm), and the epitaxial growth is carried out until the thickness is 4〇〇. 135248.doc -72- 200937499 μιη or more. On the parallel stripe mask having a mask width of 50 μm, a parallel stripe core (dislocation aggregate crystal region 5h) having a core width of 50 μm of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 μm. The ratio of the fifth/third group R5/3 is 2.5. The GaN crystal-independent substrate comprises a flat-line stripe core (dislocation-collected crystal region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type II. Due to the growth ® temperature Tq is slightly lower, it becomes type II. The donor concentration CD is lxlO15 cm_3. This value is lower. The iron concentration CFe is 1 X 1019 cm_3. The amount of iron incorporated is high. The specific resistance is 1x10&quot; Qcm. Insulation is extremely high. Can be used as a semi-insulating substrate. The crack generation rate K was 27%. This value is quite large, but it is still a useful substrate. The curvature radius R of the light curve is 5.4 m. The distortion is small. [Sample 30 (Example; Type II)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the formation of the buffer layer, the GaN crystal crystallites are grown. The crystal growth temperature Tq is 1050 ° C, the NH3 partial pressure PNH3 is 10 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 400 μm or more. On the parallel stripe mask having a mask width of 50 μm, a parallel stripe core of a 'GaN crystal having a core width of 50 μη (the dislocation aggregate crystal region 5h) was formed. The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 μm. The ratio of the fifth/third group R5/3 is 2.5. The GaN crystal independent substrate comprises 135248.doc -73- 200937499 parallel stripe core repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm (dislocation set crystal region 5 hp the core (dislocation set crystal region 5h) The crystal type is the inversion layer. The crystal surface type is π type. Because the growth temperature Tq is slightly lower, it becomes the Π type. The donor concentration (^ is lxlO15 cm·3. The value is lower. The iron concentration CFe is 5 x lO19 cm -3. The amount of iron is extremely high. The specific resistance is 1χ1〇12 Qcm. The insulation is extremely high. The crack generation rate is 18°/^ which is quite low. The curvature radius of warping is 5.7 m. Warpage约/J&gt; 〇© [sample 31 (example; type II)] on a GaAs substrate having a diameter of 2 inches &quot; (50 mm), a mask interval Dw of 500 μm and a mask width Ds of 50 μm are formed. Parallel stripe mask. After forming a buffer layer, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure pGaC1 is 4 kPa (0.04 atm). Under the conditions of 'epitaxial growth until the thickness is 400 μηι or more. The mask width is 5〇μ On the parallel stripe mask of πι, a parallel stripe core (dislocation crystallization region 5h) having a core width of 〇 GaN crystal of 5 μm is formed. The GaAs substrate is removed to obtain a separate substrate having a thickness of 400 pn^ GaN crystal. The ratio of the fifth/third group is 2.5. The GaN crystal independent substrate comprises: a flat stripe core (dislocation set crystal region 5h) repeated with a core width Ds of 50 μπι and a core interval Dw of 500 μηη The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal surface type is η type. Because the growth temperature Tq is slightly lower, it becomes a Π type. The donor concentration center is lxl〇!9 cm·3 ^The value is very high. The iron concentration &lt;: is considered to be 7 xlO19 cnT3. The amount of iron is extremely high. 135248.doc •74· 200937499 The specific resistance is 1 χ 1 〇5 Qcm. 27%. The value is quite high, but The insulating property is extremely low. The crack generation rate K is a substrate which is useful even in this case. The curvature radius R of the warpage is 6.0 m, and the distortion is small. [Sample 32 (Example; Type II)] The diameter is 2 inches. (50 mm) 2GaAs* plate 'forming mask spacing Dw is 500 μΐη, mask width ^ 5〇 μπι of parallel stripes of the mask. After forming the buffer layer 'so that epitaxial growth of a GaN crystal. Epitaxial growth temperature of 1050 C, NH3 partial pressure PNH3 was 1〇 kPa (0.1 atm), GaC1 dividing

❹ Under conditions of 4 kPa (0.04 atm), epitaxial growth is carried out until the thickness is 4 〇〇 μηη or more. On the parallel stripe mask having a mask width of 50 μm, a GaN crystal having a core width of 50 μπΐ2 parallel stripe core (dislocation aggregate crystal region 5h) was formed. The GaAs substrate was removed to obtain a single substrate having a thickness of 4 Å... Crystallization. The ratio of the fifth group to the third group was Rs/3 of 2.5. The GaN crystal-independent substrate comprises a flat-ringed core (dislocation-concentrated crystal region 5 h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystallized region 5h) is an inversion layer. The crystal face type is π type. Since the growth temperature Tq is slightly lower, it becomes type II. The donor concentration Cd is lxl〇〗 9. This value is extremely bureaucratic. The iron concentration CFe is 8 X 1 019 cm-3. The amount of iron pushed is much more. The specific resistance is 1 X 1 O7 ncm. Insulation is not high. The crack generation rate κ is 29°/. . This value is quite high, but even this is a useful substrate. The radius of curvature R of the enchantment is 5.6 m. The distortion is small. [Sample 33 (Example; Type II)] Mask spacing was formed on a GaAs substrate having a diameter of 2 inches (50 mm) 135248.doc •75- 200937499

A parallel stripe mask having a Dw of 500 μm and a mask width Ds of 50 μm. After the buffer layer is formed, the GaN crystal is epitaxially grown. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure PNH3 is 10 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4 〇〇 μηι or more. On the parallel stripe mask having a mask width of 50 μm, a parallel stripe core (dislocation aggregate crystal region 5h) having a core width of 50 μm of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate having a thickness of 400 ymiGaN crystals. The ratio of β to Group 5/Group III Rw was 2.5. The GaN crystal-independent substrate comprises a parallel stripe core (dislocation set crystal region 5 h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is the inversion layer, and the crystal face type is n type. Since the growth temperature Tq is slightly lower, it becomes a π type. The donor concentration Cd was lxl〇i5 cm-3. The concentration of the donor is low. The iron concentration CFe is 7 x lO19 cm·3. The amount of iron incorporated is extremely large. The specific resistance is 3 X 1012 Qcm. Insulation is extremely high. The crack generation rate κ 0 was 27%. This value is quite high, but even this is a useful substrate. The curvature radius R of the warp is 5.5 m. The distortion is small. [Sample 34 (Example: π type)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAS substrate having a diameter of 2 inches (50 mm). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure pNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaC1 is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 4 〇〇 μηη or more. 135248.doc -76- 200937499 formed on a parallel stripe mask with a mask width of 5 pm

The core of the GaN crystal has a width of 50 μηι parallel stripe core (dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a separate substrate of GaN crystals having a thickness of 400 μm. The ratio of the fifth/third group R5/3 is 2.5. The GaN crystal-independent substrate comprises a flat stripe core (dislocation set crystal region 5h) which is repeated at a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type II. Since the growth temperature Tq is slightly lower, it becomes type II. The donor concentration CD was lxlO15 cm·3. The © value is lower. Because of the type II, it is doped with a large amount of oxygen. The iron concentration CFe is 8xl019 cnT3. The amount of iron incorporated is extremely large. The specific resistance is 5xl012 Qcm. Insulation is extremely high. The crack generation rate K was 28%. This value is quite high, but it is also a useful substrate. The radius of curvature R of the face curvature is 5.0 m. The warpage is small. [Sample 35 (Example; Type II)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the buffer layer is formed, the GaN crystal growth crystal is grown. When the growth temperature Tq is 1050 ° C, NH 3 partial pressure P is 3 kPa (0.1 atm), GaCl partial pressure PGaCi • 2 kPa (0.02 atm), epitaxial growth is carried out until the thickness is 400. μηι the above. On the parallel stripe mask having a mask width of 50 μm, a parallel stripe core having a core width of 50 μm of GaN crystal (dislocation aggregate crystal region 5 h) was formed. The GaAs substrate was removed to obtain a GaN crystal independent substrate having a thickness of 400 μm. The ratio of the fifth/third group R5/3 is 5. The GaN crystal independent substrate package 135248.doc -77- 200937499 includes a parallel stripe core (dislocation set crystal region 5h) which is repeated with a core width Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation aggregate crystal region 5h) is an inversion layer. The crystal face type is . Since the growth temperature Tq is slightly lower, it becomes a π type. The donor concentration cD was lxi〇!9 cm·3. Because of the type of the system, it is doped with a large amount of oxygen. The iron concentration cFe is 7xl 〇 19 cm-3. The amount of iron incorporated is extremely large. The specific resistance is IxlO5 i2cm. Insulation is extremely low. The crack generation rate K was 29%. This value is quite high, but even this is a useful substrate. The curvature radius R of the warp is 5,0 m. The warpage is small. ® [Sample 36 (Example, Type II)] A parallel stripe mask having a mask interval Dw of 500 μm and a mask width Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). After the buffer layer is formed, GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is 1050 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure pGaC| is 1 kPa (0.01 atm), and epitaxial growth is performed until the thickness is 4 〇〇μηι or more. . Formed on a parallel stripe mask having a mask width of 5 μ μm

The core of the GaN crystal has a core stripe width of 5 μ μηη (the dislocation aggregate crystal region 5h). The GaAs substrate was removed to obtain a GaN crystal having a thickness of 400 μm. The fifth/third family scale 5, 3 is 10. The GaN crystal independent substrate • The package 3 is repeated with a core width Ds of 50 μm and a core spacing Dw of 5 Å - a parallel stripe core (dislocation crystallization region 5h). The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is 〗 〖. Because the growth temperature Tq is slightly lower, it becomes! !type. The concentration of the donor is ΐχΐ〇〗 9. This value is extremely high. Because of the type 11 type, it is doped with a large amount of oxygen. The iron concentration CFe is 135248.doc -78· 200937499 ... 〇 cm' iron is intensively added. The specific resistance is ΐχΐ〇7Ω_ and the insulation is not high. The crack generation rate is 28%. This value is quite high, but it is also a useful substrate. The radius of curvature of the light curvature is 5 (). [Sample 3 7 (Comparative Example; No Mask)] On a GaAs substrate having a diameter of 2 inches (5 〇 mm), no mask was formed, and the towel was formed into a buffer layer 'after' to cause GaN crystal epitaxial growth. . The epitaxial growth temperature Tq is 1 〇 5 (TC, NH 3 partial pressure! &gt; _ is 1 kPa (〇 _ _)), and epitaxial growth is performed under the condition that the pressure PGaC1 is 4 kPa (0.04 atm). Until the thickness is 400 μm or more. Since there is no mask, there is no core (the dislocation crystal region 5 hp flat C-plane crystal grows on the substrate in the same manner. The GaAs substrate is removed to obtain a thickness of 4 〇〇gmiGaN crystal The independent substrate. The ratio of the fifth group to the second group rs, 3 is 2.5. The crystal surface exposed on the surface is c-plane. The C-plane is a flat surface. C-plane growth is performed without masking. It is lxl〇]5 em·3. Because of the growth of c-plane, it is difficult for oxygen (donor) to enter the interior of the crystal, and the concentration of the donor is extremely low. It is basically not doped with oxygen. The iron concentration is IxlO17 Cm-3. The input is quite large. The specific resistance is 1χ1〇7 Qcm. The insulation is not high. The crack generation rate κ is 77%. This value is extremely high. The radius of curvature of the warp is ^^ m. The warpage is very large. The GaN crystal growth is not performed by forming a mask on the base substrate, and is not suitable as a substrate on which an element is formed. [Sample 38 (Comparative example; no mask)] On a GaAS substrate having a diameter of 2 inches (50 mm), a mask layer is formed without forming a mask, !35248.doc -79·200937499, and then GaN crystal epitaxial growth is performed. The epitaxial growth temperature Tq is l050t:, NH3 partial pressure 1&gt;_3 is 10 kPa (〇"atm), and GaC1* pressure PGaCI is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 400 μm or more. Since there is no mask, there is no core (dislocation crystal region 5h). The flat C-plane crystal grows on the substrate in the same manner. The GaAs substrate is removed to obtain a GaN crystal with a thickness of 4 μm. The ratio of rs/3 of the fifth group to the second group is 2.5. The crystal surface exposed on the surface is c-plane. The C-plane is a flat surface. The c-plane growth is performed without a mask. The donor concentration CD is lxio15 cm. -3. Oxygen (donor) is difficult to enter the interior of the crystal due to the growth of the c-plane, and the concentration of the donor is extremely low. The oxygen is not doped. The iron concentration CFe is HO16 cm·3. The amount of iron incorporated is very small. The resistance is lxl〇6 Qcm. The insulation is slightly lower. The crack generation rate K is 75%. This value is extremely high. The curvature of warping is half. R is 1.6 m. The warpage is very large. The reason is that GaN is not grown on the base substrate, and it is not suitable as a substrate on which the element is formed. [Sample 39 (Comparative Example; No Mask)] On a GaAs substrate of 2 inches (50 mm), a mask is not formed, and a buffer layer 'after' is formed to cause epitaxial growth of GaN crystals. Epitaxial growth temperature

The Tq is 1030 C, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaci is 4 kPa (0.04 atm), and epitaxial growth is performed until the thickness is 400 μm or more. Since there is no mask, there is no core (dislocation set crystallization region 5h). The flat C-plane crystals grow on the substrate in the same manner. In addition to the GaAs substrate, an independent odor of GaN crystal having a thickness of 400 μm was obtained 135248.doc -80 - 200937499. The ratio of the fifth/second group R5,3 is 2.5. The crystal face exposed on the surface is the c-plane. The c surface is a flat surface. C-plane growth was performed because there was no mask. The concentration of CD is lxlO15 cm-3. Because of the growth of c-plane, oxygen (donor) is difficult to enter the interior of the crystal, and the concentration of the donor is extremely low. It is basically not doped with oxygen. The iron concentration Ch is 10 cm. The concentration of the surface is pushed in. The specific resistance is lxl〇n Qcm. The insulation is high. The crack generation rate κ is 88%.

It is high. The radius of curvature of the warp is very large. Discomfort is the substrate on which the components are formed. [Sample 40 (Comparative Example; maskless on a GaAs substrate having a diameter of 2 inches (50 mm), without forming a mask, forming a buffer layer 'after 'forming GaN crystal epitaxial growth. The epitaxial growth temperature Tq is 103 (TC, cis 3 partial pressure! &gt; is 1 kPa (〇 _ _), such as! Partial pressure PGaCA4 kPa (〇. 〇 4 atm), I crystal growth until the thickness is more than μπι. The mask is absent so that there is no core (dislocation set crystal region 讣). The flat C-plane crystal is grown on the substrate in the same manner. The substrate is removed to obtain a separate substrate having a thickness of 400 pm2 GaN crystal. The tri-family ratio r5/3 is 2.5. The crystal surface exposed on the surface is the surface. The C surface is a flat surface. The c-plane growth is performed because there is no mask. The agricultural degree is difficult due to the c-plane growth. Entering the inside of the junction 2, the donor concentration is extremely low. Basically, it is not doped with oxygen. The iron concentration is 5x1〇19 cm·3. The iron system is doped at a relatively high concentration. The specific resistance is higher in insulation. The rate is 97%. The value is extremely high, and the curvature radius of the curve is R41.8 m. The interest is very large. I don't cooperate with 135248.doc 200937499 A substrate on which an element is formed. [Sample 41 (Comparative Example; Maskless)] On a GaAs substrate having a diameter of 2 inches (50 mm), a buffer layer is formed without forming a mask, and then (4) crystallized crystal is formed. Growth. The crystal growth temperature Tq is 1〇nrc, nh3 partial pressure!&gt; is deleted as 10 kPa (〇) atm), Gaci partial pressure P (five) is 4 kPa (0.04 atm), and the growth is carried out until the thickness is 400 μιη or more. There is no core due to no mask (dislocation set crystal region 5h). The flat c-plane crystal grows on the substrate in the same way. ® Remove GaAs substrate to obtain GaN with a thickness of 400 μηη The independent substrate of the crystal. The ratio of the fifth group to the third group is Rs/3 of 2.5. The crystal surface exposed on the surface is the C surface. The C surface is a flat surface. The c-plane growth is performed without masking. It is 1X1 〇n cm·3 〇 although it is c-plane growth, but the donor concentration is quite high &amp; iron concentration CFe is lxlO17 cm-3. The amount of iron is quite large. The specific resistance is ι&gt;&lt;ι〇5 Qcm. The insulation is very low. The crack generation rate is 68%. This value is higher. The radius of curvature of the warp is 1.4 m. The warpage is very large. Collaboration is a substrate on which components are formed. [Sample 42 (Comparative Example; Maskless)] On a GaAs substrate having a diameter of 2 inches (50 mm), no mask is formed, but a buffer layer is formed, and thereafter, GaN crystal epitaxial growth. Epitaxial growth temperature 4 is 1010. (:, Nh3 partial pressure 匕 magic is ... kpa (〇 1 atm), partial pressure PGaC1 is 4 kPa (0.04 atm), epitaxial growth Until the thickness is above 400 μηη. There is no core due to no mask (dislocation set crystallization region 5h). The flat c-plane crystal grows on the substrate in the same manner. Except for 135248.doc -82- 200937499, a GaAs substrate was obtained, and a separate substrate of GaN crystal having a thickness of 400 μm was obtained. The ratio of the fifth/third group R5,3 is 2.5. The crystal face exposed on the surface is the c-plane. The C surface is a flat surface. C-plane growth was performed because there was no mask. The donor concentration CD is 1x1 〇 17 cm·3. Although the C surface is grown, the donor concentration is quite high. The iron concentration CFe is lxio 丨 9 cm·3. Iron is incorporated at a high concentration. The specific resistance is 1 x 1 〇 7 Qcm. Insulation is not high "The crack generation rate κ is 90%. This value is extremely high. The curvature radius R of the warp is 1.4 m. The warpage is very large. Discomfort is the substrate on which the components are formed. [Sample 43 (Comparative Example; No Mask)] On a GaAs substrate having a diameter of 2 inches (50 mm), a GaN crystal was epitaxially grown after a buffer layer was formed without forming a mask. Epitaxial growth temperature

After Tq is 1050 ° C, NH 3 partial pressure PNH 3 is 10 kPa (〇.l atm), GaCl partial pressure PGaci is 4 kPa (0.04 atm), epitaxial growth is carried out until the thickness is 400 μπι or more. Since there is no mask, there is no core (dislocation set crystallization region 5h). The flat c-plane crystal grows on the substrate in the same manner. In addition to the SGaAs substrate, a separate substrate of GaN crystal having a thickness of 400 μm was obtained. The ratio of the fifth/second group Rw is 2.5. The crystal surface exposed on the surface is the surface. The C surface is a flat surface. C-plane growth was performed because there was no mask. The concentration of donor CD was lxl〇P cm-3 ^ although the surface growth was very high. The iron concentration CFe is 5x1〇b em·3. Iron is incorporated at a high concentration. The specific resistance is 1X108 Qcm. The insulation is slightly higher. The crack generation rate K was 95%. This value is extremely good. The curvature radius R of the warp is 1.6 m. The warpage is very large. The reason is that 135248.doc •83- 200937499 no mask is formed. Not suitable as a substrate on which components are formed. [Sample 44 (Example; Type I dot type)] A dot mask having a mask interval Dw of 500 μm and a mask diameter Ds of 50 μm was formed on a GaAs substrate having a diameter of 2 inches (50 mm). . After the buffer layer is formed, 'the GaN crystal epitaxial growth is made. The epitaxial growth temperature Tq is 丨丨〇〇〇c, the NH3 partial pressure PNH3 is 1 kPa (0.1 atm), and the GaCl partial pressure PGaC 丨 is 4 kPa (0.04 atm). Under the conditions, epitaxial growth was carried out until the thickness was 4 〇〇 μηη or more. On the dot mask having a mask diameter of 50 μm, a dot core (dislocation crystal region 5h) having a core diameter of 50 μm of GaN crystal was formed. The GaAs substrate was removed to obtain a separate substrate having a thickness of 4 Å pmiGaN crystals. The ratio of the fifth/third group R5,3 is 2.5. The GaN crystal-independent substrate includes a dotted core (dislocation-concentrated crystal region 5h) which is repeated at a core diameter Ds of 50 μm and a core interval Dw of 500 μm. The crystal type of the core (dislocation set crystal region 5h) is an inversion layer. The crystal face type is type I. Since the growth temperature Tq is high, it is type I. The concentration of donor body (^ is lxl〇ls cm-3. The value of donor concentration is extremely low. The iron concentration CFe is lx 1〇〗 7 cm.3. The amount of iron is not much. The specific resistance is lxl〇7 Qcm. The insulation is slightly lower because of the lower iron concentration. However, even this can be used as a semi-insulating substrate. The crack generation rate K is 20%. The crack generation rate is extremely low. The curvature radius R of the warpage is 3.2. m. [Sample 45 (Example; Type II dot type)] On a GaAs substrate having a diameter of 2 inches (50 mm), a mask interval Dw of 500 μm and a mask diameter of 50 μηι were formed. Mask. After forming the buffer layer, the GaN crystal is grown by crystal growth. The crystal growth temperature Tq is 丨〇5〇〇c, I35248.doc -84- 200937499 NH3, and the partial pressure is 3 kPa (〇1 atm). GaCi is divided into 4 kpa (0.04 atm) for epitaxial growth until the thickness is 400 μηι or more. On a dot mask with a mask diameter of 50 μη, the core diameter of QaN crystal is 50. The point core of μιη (dislocation set crystal region 5h). The GaAs substrate was removed to obtain a separate substrate having a thickness of 4 Å. The ratio of the five-group/third-group R5,3 is 2.5. The GaN crystal-independent substrate comprises a dot-like core repeated at a core interval Ds of 50 μm, a core interval Dw of 5 μm, and a (dislocation set crystal region 5h) The crystal type of the core (dislocation-concentrated crystal region 5h) is an inversion layer. The crystal surface type is: Since the growth temperature Tq is slightly lower, it becomes a Π type. The donor concentration 匕 is 1χ1〇15 em_3. The value of iron is very low. The iron concentration CFe is lx 1017 cm·3. The amount of iron is not much. The specific resistance is 1 X 1 Ο7 Qcm. The insulation is not too high. However, even this can be used as a semi-insulation. The substrate has a crack occurrence rate κ of 丨8%. The crack produces less 'good semi-insulating substrate. The curvature radius r of the warp is 4-0 m. The warpage is small. [Example B: Semi-insulation is used. Example of Element of Substrate Substrate] [Production of Element Using Stripe Core Type Semi-Insulating Substrate] [Component Sample 46 (Example; Type I)] By OMFPE method, OMMPE method, organometa Uic vapor phase epitaxy ), the crystal type of the type J produced by using the sample 3 is 3 inches in diameter. EDGE GaN substrate (striped core (dislocation crystallization region 5h) interval 500 μηι, core width 50 μηη, specific resistance ixl07 Gem) on the fabrication of HEMT (High Electron MobiHty Transist〇r, 135248.doc 85 - 200937499 high electrons The emissivity wafer is constructed of mobility transistor (Figure 28). Specifically, referring to Fig. 28, a semi-insulating GaN substrate 5s is placed in a reactor (not shown) of an OMVPE apparatus, and a gas containing hydrogen, nitrogen, and ammonia is supplied into the reactor, and the semi-insulating GaN substrate is 5s. The temperature was heat treated at 1100 ° C for 20 minutes. Next, the temperature of the semi-insulating GaN substrate 5s is raised to '1130 ° C, and ammonia and trimethyl gallium (TMG) are supplied to the reactor to grow GaN having a thickness of 1.5 μm on the half: insulating GaN substrate 5s. Epitaxial layer 202. Trimethyl Aluminium (TMA), O TMG, and ammonia were supplied to the reactor to grow an AlGaN epitaxial layer 204 having a thickness of 30 nm and a composition of A1 of 20% on the GaN epitaxial layer 202. The remote crystal substrate 210 is fabricated by these steps. Next, referring to Fig. 29, the HEMT element 200 is fabricated by the following steps. The source electrode 206 and the drain electrode 207 are formed on the AlGaN epitaxial layer 204 of the epitaxial substrate 210 by photolithography, EB (electron beam) evaporation, and stripping. The electrodes were Ti/Al/Ti/Au (each having a thickness of 20/100/20/300 nm). After the film was removed, the alloying heat treatment was carried out at 600 ° C for 1 minute. Then, the gate electrode 208 is formed by the same steps. Gate electrode • The 208 system is fabricated in such a manner that it is disposed in the parallel direction of the stripe core (dislocation-collecting crystal region 5h) without being formed on the stripe core. Gate electrode 208 • Ni/Au (each with a thickness of 50/500 nm) is used. The gate length was 2 μηη (this was taken as the component sample 46). [Component Sample 47 (Comparative Example)] In the comparative sample 47, HEMT structural epitaxial growth was performed on the Fe-doped semi-insulating random core substrate 135248.doc-86-200937499 to produce a HEMT. The so-called random core refers to the crystals randomly distributed in the crystallized region of the dislocations at 5h. If the facet is grown without a mask on the base substrate, the facet is slightly generated and becomes the dislocation set crystal region 5h ' Therefore, the dislocation crystallization region 5h (core) is randomly distributed. [Component Sample 48 (Comparative Example)] Referring to Fig. 30, as the element sample 48, an epitaxial layer for forming a HEMT structure was grown on the sapphire substrate 7. Growth step of epitaxial layer

Medium 'to 1170. (: The sapphire substrate 7 is heat-treated for 1 minute, and the human-growth GaN seed layer 201' is grown in the same manner as in the case of the GaN substrate, and the GaN epitaxial layer 202 and the A1GaN epitaxial layer 2〇4 are grown to form a Lei. Crystal substrate 3 10. Then, referring to Fig. 3, the hept element 3〇〇 (Fig. 31) is fabricated by the same procedure to compare the gate leakage currents of the π-piece samples 46, 47, 48. At the extreme voltage, the gate current density in sample 46 is the smaller value of ΐχΐ〇6 A/em2'. The gate current density in sample 47 is 1χΐ〇3 A/cm2, and the sample current density in sample 48 is j χ 1 〇 2 A/cm2, compared with the speech material, the closed-pole steam leakage motor has a large boosting force σ. The pole attack is required; for the smaller current, the clamping of the 胄 crystal is good, so that a high-performance transistor can be realized. Regarding the increase of the gate leakage current in the element 5 material 47, it is generally considered that there is a random core under the gate electrode, and the bubble leakage current due to the dislocation is related to the leakage of the substrate due to the substrate in the sample sample 48. The reason for the increase in current is generally considered to increase the dislocation density in the epitaxial layer of the stone 135248.doc -87 · 200937499 (~1 x 1 〇9/cm2), and the leakage current due to dislocations increases. As described above, high-performance HEMT and HEMT epitaxy with small gate leakage current can be realized according to the present invention. [Example C: Example of an element using a dot-type semi-insulating substrate] [Production of an element using a dot-shaped core type semi-insulating substrate] • [Component sample 49 (Example; Type I dot type) )] : A semi-insulating GaN substrate of type I in the form of a type I made by the organometallic vapor phase growth method (OMVPE method) (point-shaped core © (dislocation-collecting crystallization region 5h)] An epitaxial wafer of HEMT (high electron mobility transistor) structure was fabricated at intervals of 500 μm, core diameter 50 μm, and specific resistance lxlO7 Qcm). Specifically, referring to FIG. 28, the reaction in the OMVPE device was performed. A semi-insulating GaN substrate was placed for 5 s, and a gas containing hydrogen, nitrogen, and ammonia was supplied to the reactor, and heat treatment was performed for 20 minutes at a temperature of 1100 ° C on the semi-insulating GaN substrate 5 s. The temperature of the insulating GaN substrate 5s rises to 11 30 ° C, Ammonia, trimethyl sulfide (TMG) is supplied to the reactor to grow a GaN epitaxial layer 202 having a thickness W of 1.5 μm on the semi-insulating GaN substrate 5s. Trimethyl hydride (TMA), TMG is supplied to the reactor. And ammonia, thereby growing an AlGaN epitaxial layer 204 having a thickness of 30 nm and a composition of A1 of 20% on the GaN epitaxial layer 202. The epitaxial substrate 210 is formed by the steps; - and then, 29, the HEMT element 200 is fabricated by the following steps. The source electrode 206 and the drain electrode 207 are formed on the AlGaN epitaxial layer 204 of the epitaxial substrate 210 by photolithography, EB evaporation, and stripping. The electrodes were Ti/Al/Ti/Au (each having a thickness of 20/100/20/300 nm). After the film was removed, an alloying heat treatment was performed for 1 minute at 135248.doc -88 - 200937499 at 600 °C. Next, the gate electrode 2〇8 is fabricated by the same steps. The gate electrode 2 0 8 is formed so as not to be formed in the dot core region (dislocation crystal region 5 h). The gate electrode 208 is made of Ni/Au (each having a thickness of 50/50 〇 nm). The gate length is 2 μηι (this is taken as component sample 49). • [Component Sample 50 (Comparative Example)] 'Comparative 5 type 50 is based on the Fe-doped semi-insulating random core substrate and the HEMT structure is also grown to produce hemt. © [Component Sample 5 1 (Comparative Example)] Referring to Fig. 30, as the element sample 51, an epitaxial layer for forming a HEMT structure was grown on the sapphire substrate 7. In the growth step of the epitaxial layer, '1170'. (: The sapphire substrate 7 is heat-treated for 1 minute, and after the GaN seed layer 201 is grown, as in the case of the semi-insulating GaN plate, the GaN worm layer 202 and the AlGaN epitaxial layer 204 are grown to form an epitaxial substrate. 3 1 0. Then, referring to Figure 3 1, the hemt element 300 is fabricated by phase synchronization.

D Compare the gate leakage currents of 7L samples 49, 50, and 51. At a gate voltage of 5 V, the gate current density in sample 49 is a small value of 1χ1〇6 A/cm2. The gate current density in sample 50 is 1 x 1〇3 A/Cm2, and the sample 5 1 is in the gate. The polar current density is 1 X 1 〇 2 A/cm 2 , and the gate leakage current is greatly increased compared with the sample 49. When the gate leakage current is small, the transistor is clamped well, so a high-performance transistor can be realized. Regarding the increase in the gate leakage current in the component sample 50, it is generally considered that there is a random core under the gate electrode and the leakage current due to the dislocation is increased by I35248.doc -89-200937499. Regarding the foot in which the gate current is increased in the component sample 51, it is generally considered that the plate is made of sapphire, so the dislocation density in the epitaxial layer is increased (1×10 /cm), and the leakage current due to the dislocation is increased by J_. As described above, according to the present invention, it is possible to realize a high (four) HEMT and HEMT crystal substrate having a small closed-leakage current.

❹ With regard to the above examples of samples (4), 44, and 45, the values of the temperature and the fifth family/second family scale in Fig. 22 are represented by white dots (type II) and white triangles (type I). . Both are in the range surrounded by the dotted line (10) peach ~ (1) generation, fifth group / second group ratio Rw = 1 ~ 1 〇) e comparison example p ~, about the ratio of temperature to the fifth / third family R5 / 3, sometimes within the dashed box, and sometimes not within the dashed box. Even within the dashed box, these comparative examples are not suitable for cracks and interesting pieces. The reason is that no mask is provided. More than the car father's example to detect the effect of the mask. Fig. 23 shows the crack occurrence rate (%) on the vertical axis and the crack occurrence rate (%) on the horizontal axis of the curvature radius (m) of the sample, and the warpage and crack generation rate are indicated by dots. The subscript indicates the serial number of the sample. White dots indicate the type of sample 1 to 21, 44. The white triangle indicates the sputum samples 22 to 36 and 45. The white squares correspond to the samples 37 to 43 of the comparative examples. The samples 37 to 43 of the comparative example had a large warpage (curvature radius of 1 m to 2 m) and a crack generation rate of 68 to 97%, which was not suitable as a substrate for a semiconductor element. The reason for this is that there is no mask on the base substrate. When the type 1 and the type 11 are compared, the warpage (radius of curvature) is between 5 m and 6 m without significant change. Regardless of Type I or Type II, the radius of curvature of the warp is 135248.doc -90- 200937499 m or more. Distributed between 3 m and 7 m. The crack generation rate is below 3〇%. The type I crack generation rate is 4. /. Between ~27%, most of them are distributed between 10% and 20%. The crack rate of type II is between 13% and 29%, and most of it is between 25% and 29%. In terms of cracks, j type is superior to π type. Both type and type II can be used as semi-insulating substrates.

Fig. 27 is a graph showing the distribution of the donor concentration and the iron (iv) concentration (cm·3) of the samples 丨 to 45. The horizontal axis represents the donor (oxygen) concentration, and the vertical axis represents the iron concentration. The white dot indicates type I, the white triangle indicates „type, and the white square indicates no comparison. The subscript indicates the serial number of the sample. It can be seen that the concentration of the application (white triangle) is higher than that of the south. The highest (samples 19, 2, 21) 'but most of the type I has a lower concentration. The amount of iron in type II increases substantially proportional to the amount of donor body', but even in the form of j In addition, the amount of iron may be more. In this case, the type is more excellent. Further, an etching solution of phosphoric acid and sulfuric acid is used for etching at 2 〇〇 tT, thereby measuring samples of type I and type II 1 to 36. The dislocation density of the samples of Comparative Examples 37 to 43 was measured by using an objective lens of a differential interferometric optical microscope 100 times, and the number of pits in the region of 100×100 μm was calculated. As a result, Comparative Example 3 7~ The position of the sample of 43 is 2χ107~108/cm2, whereas the sample with the wrong density (etched pit density) of ~36 is 5xl〇6/cm2 or less, especially the curvature of the crystal is buckled. , wind / 1 Qing called the flat diameter of more than 4 m, the dislocation density is 2xl06 / cm2 or less, more than e 芍 back 3 The dislocation density is one half of the junction below l〇5/cm2. However, the initial growth of the sample 21 is facet growth, so the type of the crystal face is II, and the type I face is not limited to the type I. 135248.doc -91 - 200937499 'The sample with the same radius of curvature is the same as ^, plus the dislocation density, and 々 is half. If the type is π, the dislocation density is the same as the sample 25 with the same radius of curvature. The GaAs substrate used in the preparation of samples 1 to 36, and the sapphire substrate or the Sic substrate can be used to obtain the same crystal surface, Fe concentration, donor concentration, specific resistance, crack generation rate, and curvature of the sacred curvature as the sample. In addition, the GaN substrate of Samples 1 to 36 was used as a base substrate and grown under the same conditions as the sample 1 to %. As a result, a crystal surface having the same level as that of the sample was obtained, and concentration was obtained. Substrate concentration, specific resistance, crack generation rate, and radius of curvature of the substrate. The present invention has been described and illustrated in detail, but it is intended to be illustrative and not restrictive, The domain is only limited by the terms of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an example of a mask formed on a base substrate 1. Figs. 2A to 2G show a crystal growth step by a mask method. Fig. 3 is a perspective view showing a portion of crystals grown by the facet growth method. Fig. 4 is a perspective view showing the pits in which the dislocations are gathered at the bottom of the pit during the facet growth process. A plan view of a pit in which dislocations are gathered at the bottom of the pit during the facet growth is illustrated. Fig. 6 is a plan view showing a portion of a dot mask having a dot-like portion formed on the base substrate for facet growth. 135248.doc • 92·200937499 Fig. 7 is a perspective view showing an example of GaN crystals which are faceted on a base substrate on which a dot mask is provided. Fig. 8 is a plan view showing an example of GaN crystals which are faceted on a base substrate provided with a dot mask. 9A to 9F are longitudinal cross-sectional views showing a step of growing a GaN crystal by a facet growth method using a dot mask. • Fig. 10 is a plan view showing a portion of a stripe type mask formed on a base substrate for facet growth. ® Fig. 11 is a plan view showing an example of GaN crystals facet grown on a base substrate provided with a stripe type mask. Fig. 12 is a perspective view showing an example of GaN crystals which are facet grown on a base substrate provided with a stripe type mask. Fig. 13 is a plan view showing another example of GaN crystal which is faceted on a base substrate provided with a stripe type mask. Fig. 14 is a perspective view showing another example of GaN crystal which is faceted on a base substrate provided with a stripe type mask. 15A to 15F are longitudinal cross-sectional views showing a growth step of GaN crystal by a facet growth method using a stripe type mask. 16A and 16B are longitudinal cross-sectional views showing a further growth step of GaN crystal by a facet growth using a stripe type mask. The ® 17 series is a cross-sectional view of an example of GaN crystals disclosed in detail. Fig. 18 is a view showing another example of the crystal of (4) disclosed in Patent Document 7. 135248.doc • 93· 200937499 Fig. 19 is a cross-sectional view showing an example of an HVPE furnace used in the present invention. Fig. 2 is a view showing a crystal plane of a plastic nitride semiconductor obtained by the present invention. σ Fig. 21 is a view showing a crystal of a nitride semiconductor obtained in the present invention. Fig. 22 is a green patent document and the present invention. A graph showing the relationship between the growth temperature and the ratio of the fifth group to the third group R5, 3 in the embodiment of the vapor phase growth method. In the graph, the horizontal axis represents the growth temperature, and the vertical axis represents the logarithmic scale. The ratio of the fifth/third group R5, 3. The numerical values attached to the respective figures indicate the number of the patent documents. Fig. 23 is the curvature of the warp in the sample of the embodiment and the comparative example of the present invention. A graph showing the relationship between the radius and the crack occurrence rate. In the graph, the horizontal axis represents the radius of curvature of the warp and the vertical axis represents the crack generation rate. The numbers attached to the respective figures indicate the sample numbers. Regarding the drawing marks, the white dots The embodiment in which the type 1 crystal is shown, the white triangle indicates the embodiment of the type II crystal, and the white square indicates the comparative example. Further, the comparative examples in the graph are not well known. Fig. 24 shows the hybrid type obtained in the present invention. Crystallized semiconductor Cross-sectional view: ®25 is a plan view showing the width Ds of the strip mask formed on the base substrate and the size of the interval Dw. ® 26 indicates the diameter Ds of the dot mask formed on the base substrate and the size of the interval Dw. Floor plan. 135248.doc 94· 200937499

Fig. 27 is a table showing the relationship (4) between the test body concentration and the iron concentration as an example and a comparative example of the present invention. (d) in the table, I

The logarithm of the scale is indicated by *, Λ ^ U, and the vertical axis indicates the iron concentration expressed by the logarithmic scale. X, the number attached to each figure indicates the sample number. Regarding the drawing symbol 'the white dot indicates an example of the type 1 crystal, the white triangle indicates an example of the π-type crystal, and the white square indicates the comparative example. Moreover, the comparative examples in this chart are not well known. ❹

Fig. 28 is a longitudinal sectional view showing an epitaxial substrate obtained by growing a GaN thin film on a semi-insulating GaN substrate. Fig. 29 is a longitudinal cross-sectional view showing Hemt obtained by forming an electrode on an epitaxial substrate on which a GaN film is grown on a semi-insulating GaN substrate. Fig. 30 is a longitudinal sectional view showing an epitaxial substrate obtained by growing a GaN thin film on a sapphire substrate. Fig. 31 is a longitudinal sectional view showing a HEMT obtained by forming an electrode on an epitaxial substrate obtained by growing a GaN film on a sapphire substrate. [Description of main component symbols] 1 Base substrate 1 e Exposure part 3 Mask 3w Opening 5 Crystal 5b Boundary line 5c C surface 5f Facet 135248.doc -95- 200937499

5h 5k 5p 5pd 5s 5t 5v 5y 5z 7 102 103 104 105 107 108 109 110 200 , 300 201 202 204 206 207 Linear Dislocation Aggregation Crystalline Grain Bump Surface Dislocation Collection Crystalline Region Semi-Insulating GaN Substrate dislocation normal direction dislocation reduction C surface growth crystallization region dislocation reduction facet growth crystallization region sapphire substrate reactor heater

Ga memory crystal holder first material gas supply pipe second material gas supply pipe exhaust pipe third material gas supply pipe HEMT element GaN seed layer GaN epitaxial layer AlGaN epitaxial layer source electrode drain electrode 135248.doc - 96- 200937499 208 Gate electrode 210 ' 310 Insect substrate Dp Pitch Ds Mask width Dw Interval Hkmn Non-C surface

135248.doc 97-

Claims (1)

200937499 X. Patent Application Range: 1. A method for manufacturing a semi-insulating nitride semiconductor substrate, comprising: a step of forming a mask (3) on a base substrate (1), the mask (3) being width or The dot-shaped or strip-shaped covering portion having a diameter Ds of 10 μm to 100 μm is arranged such that the interval Dw is 250 μm to 2000 μηι; and the ratio of the fifth group/third group Rw is 1 to 10 by the HVPE method. Step of growing nitride semiconductor crystals (5) on the above-mentioned base substrate (1) at a growth temperature of 1040 ° C to 1150 ° C for a group of source gases, a Group 5 source gas, and a gas containing iron And a step of removing the base substrate (1); and obtaining a semi-insulating nitride semiconductor substrate having a specific resistance of 1×10 5 cm or more and a thickness of 100 μϊη or more. 2. The method of producing a semi-insulating nitride semiconductor substrate according to claim 1, wherein the ratio of the fifth group to the second group Rw is 1 to 5, and the growth temperature is 1 〇 9 〇. From 〇 to 11 50 ° C, the above-described nitride semiconductor crystal (5) having a crystal surface which is substantially flat except for the above-mentioned coating portion is grown. 3. The method for producing a semi-insulating nitride semiconductor substrate according to claim 5, wherein the ratio of the fifth group/second group R5,3 is diurnal and the growth temperature is 1〇4〇. 〇〜• 1070 C, the nitride semiconductor crystal '(5)' having the facet (5f) is grown. The facet (5f) is the top of the covered portion, and the middle of the adjacent covered portion is the top. 4. A semi-insulating nitride semiconductor substrate comprising: a dot-like or strip-shaped dislocation set crystal region (5h, 5h) having a diameter or width Ds, 250 of ι 135248.doc 200937499 μπι~100 μηη Between μιη and 2000 μιη intervals Dw; dislocations reduce the facet-grown crystallization region, 5ζ), which is repeated between the adjacent dislocation set crystal regions (5h, 5h); and dislocations reduce C-plane growth a crystallization region (5y) existing between the above-mentioned dislocation-reducing facet-grown crystal regions (5z, 5z); and a specific resistance of lxlO5 Qcm or more, a thickness of 100 μm or more, and a curvature half-_ diameter of warpage It is 3 m or more. 5. A nitride semiconductor epitaxial substrate comprising: a semi-insulating nitride semiconductor substrate (5s) having a specific resistance of 1 X 1 〇 5 Qcm or more and a thickness of 100 μηι or more and comprising: dots or strips The dislocations are crystallized (5h, 5h), which are repeated with a diameter of 10 μπι to 1〇〇μηι or a width Ds of 250 μηι to 2000 μηι; dislocations reduce the area of faceted growth crystallization (5z, 5z), which is repeated between the adjacent dislocation set junction domains (5h, 5h), and dislocations reduce the CI surface growth crystallization region (5y) 'which exists in the above dislocation reduction facet growth Between the crystallization regions (5z, 5z) and the bismuth nitride semiconductor epitaxial layers (202, 204) are provided on the semi-insulating nitride semiconductor substrate (5s); and the curvature radius of the warp is 3 m or more. 6. A field effect transistor comprising: • a semi-insulating nitride semiconductor substrate (5 s) having a specific resistance of 丨x 丨〇 5 Qcm or more and comprising: a dot-like or strip-shaped dislocation crystallization region (5h) , 5h) 'It is repeated at a spacing Dw of 1〇μιη~100, diameter or width Ds, 25〇μηι; dislocation reduces the facet-grown crystalline region (5z, 135248.doc 200937499 5z), which is adjacent to The dislocation-receiving crystallization regions (5h, 5h) are repeatedly present; and the dislocations reduce the C-plane growth crystallization region (5y), which exists between the dislocation-reducing facet-growing crystallization regions (5z, 5z); a semiconductor semiconductor epitaxial layer (202, 204) disposed on the semi-insulating nitride semiconductor substrate (5s); and - a gate electrode (208), a source electrode (206), and a drain electrode (207), The sub-layer is not disposed on the nitride semiconductor epitaxial layer (202, 204); and the gate electrode (208) is formed on the crystal region of φ other than the dislocation crystal region (5h). 135248.doc