JP2010520603A5 - - Google Patents

Download PDF

Info

Publication number
JP2010520603A5
JP2010520603A5 JP2009552683A JP2009552683A JP2010520603A5 JP 2010520603 A5 JP2010520603 A5 JP 2010520603A5 JP 2009552683 A JP2009552683 A JP 2009552683A JP 2009552683 A JP2009552683 A JP 2009552683A JP 2010520603 A5 JP2010520603 A5 JP 2010520603A5
Authority
JP
Japan
Prior art keywords
electrode
light emitting
inorganic light
emitting layer
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009552683A
Other languages
English (en)
Other versions
JP2010520603A (ja
Filing date
Publication date
Priority claimed from US11/683,479 external-priority patent/US7888700B2/en
Application filed filed Critical
Publication of JP2010520603A publication Critical patent/JP2010520603A/ja
Publication of JP2010520603A5 publication Critical patent/JP2010520603A5/ja
Pending legal-status Critical Current

Links

Claims (3)

  1. 透明な基板;第一電極;該第一電極に向かい合っている第二電極;無機半導体マトリックス中にコア/シェル量子ドットを含む多結晶無機発光層、を含む無機発光デバイスであって、該第一電極が透明であり且つ該透明な基板上に形成され、該多結晶無機発光層が該第一電極の上に形成され、且つ該第二電極が該発光層の上に形成される、無機発光デバイス。
  2. 基板;第一電極;該第一電極に向かい合っている第二電極;無機半導体マトリックス中にコア/シェル量子ドットを含む多結晶無機発光層、を含む無機発光デバイスであって、該第一電極が反射性であり且つ該基板上に形成され、該多結晶無機発光層が該第一電極の上に形成され、且つ該第二電極が該発光層の上に形成され且つ透明である、無機発光デバイス。
  3. 独立に制御される複数の発光素子を含む無機発光デバイスであって、少なくとも一つの発光素子が、第一のパターン処理された電極;該第一の電極に向かい合っている第二電極;および該電極間に形成された半導体マトリックス中にコア/シェル量子ドットを含む多結晶無機発光層を含む、無機発光デバイス。
JP2009552683A 2007-03-08 2008-02-18 量子ドット発光デバイス Pending JP2010520603A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/683,479 US7888700B2 (en) 2007-03-08 2007-03-08 Quantum dot light emitting device
PCT/US2008/002041 WO2008112062A2 (en) 2007-03-08 2008-02-18 Quantum dot light emitting device

Publications (2)

Publication Number Publication Date
JP2010520603A JP2010520603A (ja) 2010-06-10
JP2010520603A5 true JP2010520603A5 (ja) 2012-02-23

Family

ID=39529405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009552683A Pending JP2010520603A (ja) 2007-03-08 2008-02-18 量子ドット発光デバイス

Country Status (6)

Country Link
US (1) US7888700B2 (ja)
EP (1) EP2115791A2 (ja)
JP (1) JP2010520603A (ja)
CN (1) CN101681956B (ja)
TW (1) TWI436496B (ja)
WO (1) WO2008112062A2 (ja)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7308202B2 (en) * 2002-02-01 2007-12-11 Cubic Corporation Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
EP1999797A4 (en) * 2006-02-09 2010-11-24 Qd Vision Inc DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTALS AND A LAYER COMPRISING A DOPE ORGANIC MATERIAL AND METHODS THEREOF
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
JP2010508620A (ja) 2006-09-12 2010-03-18 キユーデイー・ビジヨン・インコーポレーテツド 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
KR20090002787A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 트랜지스터 구조를 이용한 발광소자 및 수광소자
US7956347B2 (en) * 2007-07-11 2011-06-07 Cubic Corporation Integrated modulating retro-reflector
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8128249B2 (en) * 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
US8092719B2 (en) * 2007-09-04 2012-01-10 Samsung Electronics Co., Ltd. Nanocrystal-metal oxide composites and preparation method thereof
JP5176459B2 (ja) * 2007-09-28 2013-04-03 大日本印刷株式会社 白色発光素子
WO2009058890A2 (en) * 2007-10-29 2009-05-07 Cubic Corporation Resonant quantum well modulator driver
US7859675B2 (en) * 2007-11-06 2010-12-28 Cubic Corporation Field test of a retro-reflector and detector assembly
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
WO2009099425A2 (en) 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
WO2009123763A2 (en) 2008-04-03 2009-10-08 Qd Vision, Inc. Light-emitting device including quantum dots
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US8459855B2 (en) * 2008-07-28 2013-06-11 Munisamy Anandan UV LED based color pixel backlight incorporating quantum dots for increasing color gamut of LCD
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
WO2010078581A1 (en) * 2009-01-05 2010-07-08 Plextronics, Inc. Organic light emitting diode phototherapy lighting system
KR101097342B1 (ko) * 2010-03-09 2011-12-23 삼성모바일디스플레이주식회사 양자점 유기 전계 발광 소자 및 그 형성방법
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
US8469519B2 (en) 2010-06-16 2013-06-25 Eastman Kodak Company Projection apparatus providing reduced speckle artifacts
US8085467B1 (en) 2010-06-16 2011-12-27 Eastman Kodak Company Projection display surface providing speckle reduction
CN103228983A (zh) * 2010-11-10 2013-07-31 纳米系统公司 量子点薄膜、照明器件及照明方法
WO2012089739A2 (de) 2010-12-28 2012-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher, verwendung eines informationsspeichers als passives display und sensoranordung
DE102011076535A1 (de) 2011-05-26 2012-11-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher und verwendung eines informationsspeichers als passives display
JP5719610B2 (ja) * 2011-01-21 2015-05-20 三菱電機株式会社 薄膜トランジスタ、及びアクティブマトリクス基板
US8541833B2 (en) * 2011-04-08 2013-09-24 Infineon Technologies Austria Ag Power transistor device vertical integration
US9520573B2 (en) 2011-05-16 2016-12-13 Qd Vision, Inc. Device including quantum dots and method for making same
KR101916245B1 (ko) * 2011-07-27 2018-11-07 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
GB201116517D0 (en) * 2011-09-23 2011-11-09 Nanoco Technologies Ltd Semiconductor nanoparticle based light emitting materials
KR101927116B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927115B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
CN102569570A (zh) * 2012-01-04 2012-07-11 天津理工大学 一种近红外无机量子点电致发光器件及制备方法
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
US8962378B2 (en) * 2012-07-16 2015-02-24 The Boeing Company Photodiode and method for making the same
US9419174B2 (en) 2012-09-26 2016-08-16 University Of Florida Research Foundation, Inc. Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
US9123638B2 (en) * 2013-03-15 2015-09-01 Rohm And Haas Electronic Materials, Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9559322B2 (en) * 2013-04-05 2017-01-31 Samsung Display Co., Ltd. Quantum dots, methods of manufacturing quantum dots and methods of manufacturing organic light emitting display devices using the same
KR102228142B1 (ko) * 2013-04-05 2021-03-22 삼성디스플레이 주식회사 양자점, 양자점의 제조 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US20140339437A1 (en) * 2013-05-17 2014-11-20 Hany Maher AZIZ Method and apparatus for sensing device including quantum dot light emitting devices
US9773993B2 (en) * 2014-01-16 2017-09-26 Konica Minolta, Inc. Electroluminescence element
US20160333268A1 (en) * 2014-01-17 2016-11-17 Pacific Light Technologies Corp. Irregular Large Volume Semiconductor Coatings for Quantum Dots (QDs)
JP6357349B2 (ja) * 2014-05-16 2018-07-11 株式会社ジャパンディスプレイ 表示装置
JP6425921B2 (ja) 2014-06-12 2018-11-21 株式会社ジャパンディスプレイ 画像表示装置
US10739882B2 (en) 2014-08-06 2020-08-11 Apple Inc. Electronic device display with array of discrete light-emitting diodes
JP6391401B2 (ja) 2014-10-03 2018-09-19 株式会社ジャパンディスプレイ 画像表示装置
JP2016139560A (ja) 2015-01-28 2016-08-04 株式会社ジャパンディスプレイ 表示装置
US10490762B2 (en) 2015-02-04 2019-11-26 University Of North Carolina At Charlotte Quantum dot light emitting devices
US10514132B2 (en) * 2015-08-27 2019-12-24 Sabic Global Technologies B.V. Apparatus having electroluminescent quantum dots
KR102607451B1 (ko) * 2016-03-15 2023-11-28 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN105676517A (zh) 2016-03-22 2016-06-15 成都京东方光电科技有限公司 一种量子点膜及显示装置
CN105789237A (zh) * 2016-04-25 2016-07-20 京东方科技集团股份有限公司 Led显示模组、显示装置及显示模组的制作方法
US9825214B1 (en) * 2016-06-22 2017-11-21 Mainstream Engineering Corporation Films and the like produced from particles by processing with electron beams, and a method for production thereof
CN107841305B (zh) * 2016-09-19 2020-09-01 乐金显示有限公司 无机发光颗粒、无机发光颗粒膜以及包括其的led封装和显示装置
US10790411B2 (en) * 2016-12-01 2020-09-29 Nanosys, Inc. Quantum dot LED with spacer particles
CN109671837B (zh) * 2017-10-17 2021-08-10 乐金显示有限公司 发光体以及包括其的发光膜、发光二极管和发光装置
KR20190043085A (ko) 2017-10-17 2019-04-25 엘지디스플레이 주식회사 발광체, 이를 포함하는 발광 필름, 발광다이오드 및 발광장치
TWI648846B (zh) * 2017-12-20 2019-01-21 友達光電股份有限公司 光偵測器
US11049900B2 (en) 2018-08-30 2021-06-29 Analog Devices, Inc. Monolithically integrated nanoemitter light source assembly
KR102547915B1 (ko) * 2018-10-12 2023-06-23 엘지디스플레이 주식회사 양자점 발광다이오드, 그 제조 방법 및 양자점 발광표시장치
US20220149338A1 (en) * 2019-02-20 2022-05-12 Sharp Kabushiki Kaisha Light-emitting device, and method for manufacturing light-emitting device
WO2020170371A1 (ja) * 2019-02-20 2020-08-27 シャープ株式会社 発光デバイスの製造方法
CN109855526B (zh) * 2019-02-28 2020-08-21 吉林大学 一种基于干燥介导自组装的电阻式柔性应变传感器及其制备方法
KR20210051998A (ko) 2019-10-31 2021-05-10 삼성전자주식회사 발광 소자, 그 제조방법 및 이를 포함한 표시 장치
US20230403874A1 (en) * 2020-10-30 2023-12-14 Sharp Kabushiki Kaisha Light-emitting element, display device and light-emitting element manufacturing method
WO2024053088A1 (ja) * 2022-09-09 2024-03-14 シャープディスプレイテクノロジー株式会社 発光素子および表示装置
WO2024079908A1 (ja) * 2022-10-14 2024-04-18 シャープディスプレイテクノロジー株式会社 発光素子および表示装置並びに発光素子の製造方法
WO2024079909A1 (ja) * 2022-10-14 2024-04-18 シャープディスプレイテクノロジー株式会社 発光素子、表示デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW439387B (en) 1998-12-01 2001-06-07 Sanyo Electric Co Display device
US6803603B1 (en) 1999-06-23 2004-10-12 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
JP2002014343A (ja) * 2000-04-26 2002-01-18 Nec Corp 液晶表示装置、発光素子、液晶表示装置の製造方法
EP1430549A2 (en) * 2001-09-04 2004-06-23 Koninklijke Philips Electronics N.V. Electroluminescent device comprising quantum dots
AU2003279708A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7132787B2 (en) * 2002-11-20 2006-11-07 The Regents Of The University Of California Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof
CN100485992C (zh) * 2003-06-26 2009-05-06 哈尔滨东科光电科技股份有限公司 高对比度电致发光器件
EP1704596A2 (en) * 2003-09-05 2006-09-27 Dot Metrics Technology, Inc. Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture
US7746681B2 (en) * 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
JP4378230B2 (ja) * 2004-06-15 2009-12-02 キヤノン株式会社 発光素子及びその製造方法
KR100773538B1 (ko) 2004-10-07 2007-11-07 삼성전자주식회사 반사 전극 및 이를 구비하는 화합물 반도체 발광소자
US7615800B2 (en) 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer

Similar Documents

Publication Publication Date Title
JP2010520603A5 (ja)
JP2007511890A5 (ja)
WO2008112062A3 (en) Quantum dot light emitting device
JP2004525493A5 (ja)
JP2008047515A5 (ja)
JP2007533076A5 (ja)
JP2009530832A5 (ja)
JP2008513256A5 (ja)
JP2007525713A5 (ja)
JP2010530640A5 (ja)
JP2014056815A5 (ja)
JP2016027374A5 (ja)
JP2005500652A5 (ja)
JP2011502333A5 (ja)
JP2007288074A5 (ja)
JP2007042624A5 (ja)
JP2010529598A5 (ja)
JP2008538155A5 (ja)
TW200721906A (en) Area light emitting device
JP2008270187A5 (ja) 発光装置の作製方法
JP2008508695A5 (ja)
JP2005340187A5 (ja)
JP2010010591A5 (ja)
JP2010165669A5 (ja) 発光装置の作製方法
JP2007258113A5 (ja)