JP2010518635A5 - - Google Patents
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- Publication number
- JP2010518635A5 JP2010518635A5 JP2009549208A JP2009549208A JP2010518635A5 JP 2010518635 A5 JP2010518635 A5 JP 2010518635A5 JP 2009549208 A JP2009549208 A JP 2009549208A JP 2009549208 A JP2009549208 A JP 2009549208A JP 2010518635 A5 JP2010518635 A5 JP 2010518635A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- conductive
- liner
- conductive ring
- central cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- 238000004140 cleaning Methods 0.000 claims 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/672,922 US8137501B2 (en) | 2007-02-08 | 2007-02-08 | Bevel clean device |
| US11/672,922 | 2007-02-08 | ||
| PCT/US2008/053081 WO2008097996A1 (en) | 2007-02-08 | 2008-02-05 | Bevel clean device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013005371A Division JP5628352B2 (ja) | 2007-02-08 | 2013-01-16 | ベベル洗浄装置及び方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010518635A JP2010518635A (ja) | 2010-05-27 |
| JP2010518635A5 true JP2010518635A5 (https=) | 2011-03-24 |
| JP5475467B2 JP5475467B2 (ja) | 2014-04-16 |
Family
ID=39682091
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009549208A Active JP5475467B2 (ja) | 2007-02-08 | 2008-02-05 | ベベル洗浄装置及び方法 |
| JP2013005371A Active JP5628352B2 (ja) | 2007-02-08 | 2013-01-16 | ベベル洗浄装置及び方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013005371A Active JP5628352B2 (ja) | 2007-02-08 | 2013-01-16 | ベベル洗浄装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8137501B2 (https=) |
| JP (2) | JP5475467B2 (https=) |
| KR (1) | KR101423359B1 (https=) |
| CN (1) | CN101606233B (https=) |
| TW (1) | TWI419226B (https=) |
| WO (1) | WO2008097996A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080277064A1 (en) * | 2006-12-08 | 2008-11-13 | Tes Co., Ltd. | Plasma processing apparatus |
| KR100823302B1 (ko) * | 2006-12-08 | 2008-04-17 | 주식회사 테스 | 플라즈마 처리 장치 |
| US8083963B2 (en) * | 2007-02-08 | 2011-12-27 | Applied Materials, Inc. | Removal of process residues on the backside of a substrate |
| US8137501B2 (en) * | 2007-02-08 | 2012-03-20 | Lam Research Corporation | Bevel clean device |
| US7981307B2 (en) * | 2007-10-02 | 2011-07-19 | Lam Research Corporation | Method and apparatus for shaping gas profile near bevel edge |
| US8323523B2 (en) * | 2008-12-17 | 2012-12-04 | Lam Research Corporation | High pressure bevel etch process |
| US8262923B2 (en) * | 2008-12-17 | 2012-09-11 | Lam Research Corporation | High pressure bevel etch process |
| JP2011029562A (ja) * | 2009-07-29 | 2011-02-10 | Fujitsu Semiconductor Ltd | 半導体ウェハ端面の処理方法および半導体装置の製造方法 |
| US8562750B2 (en) * | 2009-12-17 | 2013-10-22 | Lam Research Corporation | Method and apparatus for processing bevel edge |
| US20110206833A1 (en) * | 2010-02-22 | 2011-08-25 | Lam Research Corporation | Extension electrode of plasma bevel etching apparatus and method of manufacture thereof |
| US8501283B2 (en) | 2010-10-19 | 2013-08-06 | Lam Research Corporation | Methods for depositing bevel protective film |
| JP5523436B2 (ja) | 2011-12-19 | 2014-06-18 | 三菱電機株式会社 | 半導体清浄装置および半導体清浄方法 |
| US10937634B2 (en) | 2013-10-04 | 2021-03-02 | Lam Research Corporation | Tunable upper plasma-exclusion-zone ring for a bevel etcher |
| US12007689B2 (en) | 2021-07-01 | 2024-06-11 | Tokyo Electron Limited | Apparatus and method for spin processing |
| US10566181B1 (en) * | 2018-08-02 | 2020-02-18 | Asm Ip Holding B.V. | Substrate processing apparatuses and substrate processing methods |
| WO2020231612A1 (en) * | 2019-05-15 | 2020-11-19 | Applied Materials, Inc. | Bevel peeling and defectivity solution for substrate processing |
| KR102116474B1 (ko) * | 2020-02-04 | 2020-05-28 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP7840318B2 (ja) * | 2020-09-01 | 2026-04-03 | ラム リサーチ コーポレーション | ウエハベベルエッジのプラズマ処理におけるアーキングの低減 |
| KR102801223B1 (ko) * | 2020-11-16 | 2025-04-30 | 삼성전자주식회사 | 플라즈마 공정 챔버 |
| KR102727237B1 (ko) | 2021-08-20 | 2024-11-08 | 주식회사 브러쉬텍 | 웨이퍼 베벨 영역 세정용 브러쉬 |
| KR102777345B1 (ko) | 2022-06-29 | 2025-03-07 | 주식회사 브러쉬텍 | 웨이퍼 세정용 무전분 브러쉬 및 그 제조방법 |
| JP2024131171A (ja) * | 2023-03-15 | 2024-09-30 | キオクシア株式会社 | 半導体製造装置及び半導体装置の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH029115A (ja) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
| US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
| US5948704A (en) * | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US6014082A (en) * | 1997-10-03 | 2000-01-11 | Sony Corporation | Temperature monitoring and calibration system for control of a heated CVD chuck |
| TW459225B (en) * | 1999-02-01 | 2001-10-11 | Origin Electric | Bonding system and method |
| JP2001044147A (ja) | 1999-08-04 | 2001-02-16 | Mitsubishi Materials Silicon Corp | 半導体ウェーハの面取り面の形成方法 |
| US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
| KR100442194B1 (ko) | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | 웨이퍼 건식 식각용 전극 |
| US7615131B2 (en) * | 2003-05-12 | 2009-11-10 | Sosul Co., Ltd. | Plasma etching chamber and plasma etching system using same |
| DE102004024893A1 (de) * | 2003-05-27 | 2005-04-14 | Samsung Electronics Co., Ltd., Suwon | Vorrichtung und Verfahren zum Ätzen eines Wafer-Rands |
| KR100585089B1 (ko) * | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법 |
| KR100585198B1 (ko) * | 2003-07-18 | 2006-06-01 | 위순임 | 웨이퍼 에지 처리용 플라즈마 발생장치 |
| US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| JP4502198B2 (ja) | 2004-10-21 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | エッチング装置およびエッチング方法 |
| JP4628874B2 (ja) * | 2005-06-03 | 2011-02-09 | 東京エレクトロン株式会社 | プラズマ処理装置及び電位制御装置 |
| KR20070001493A (ko) | 2005-06-29 | 2007-01-04 | 주식회사 하이닉스반도체 | 웨이퍼 베벨 식각용 디에프브이 장치 |
| US7858898B2 (en) | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
| US8137501B2 (en) * | 2007-02-08 | 2012-03-20 | Lam Research Corporation | Bevel clean device |
-
2007
- 2007-02-08 US US11/672,922 patent/US8137501B2/en active Active
-
2008
- 2008-02-04 TW TW097104234A patent/TWI419226B/zh active
- 2008-02-05 KR KR1020097018719A patent/KR101423359B1/ko active Active
- 2008-02-05 CN CN2008800043847A patent/CN101606233B/zh active Active
- 2008-02-05 WO PCT/US2008/053081 patent/WO2008097996A1/en not_active Ceased
- 2008-02-05 JP JP2009549208A patent/JP5475467B2/ja active Active
-
2013
- 2013-01-16 JP JP2013005371A patent/JP5628352B2/ja active Active
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