KR101423359B1 - 베벨 세정 디바이스 - Google Patents

베벨 세정 디바이스 Download PDF

Info

Publication number
KR101423359B1
KR101423359B1 KR1020097018719A KR20097018719A KR101423359B1 KR 101423359 B1 KR101423359 B1 KR 101423359B1 KR 1020097018719 A KR1020097018719 A KR 1020097018719A KR 20097018719 A KR20097018719 A KR 20097018719A KR 101423359 B1 KR101423359 B1 KR 101423359B1
Authority
KR
South Korea
Prior art keywords
wafer
electrically conductive
conductive ring
center cover
wafer support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097018719A
Other languages
English (en)
Korean (ko)
Other versions
KR20090110870A (ko
Inventor
윤상 김
앤드류 3세 베일리
그레그 섹스턴
기찬 김
안드라스 커티
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20090110870A publication Critical patent/KR20090110870A/ko
Application granted granted Critical
Publication of KR101423359B1 publication Critical patent/KR101423359B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020097018719A 2007-02-08 2008-02-05 베벨 세정 디바이스 Active KR101423359B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/672,922 US8137501B2 (en) 2007-02-08 2007-02-08 Bevel clean device
US11/672,922 2007-02-08
PCT/US2008/053081 WO2008097996A1 (en) 2007-02-08 2008-02-05 Bevel clean device

Publications (2)

Publication Number Publication Date
KR20090110870A KR20090110870A (ko) 2009-10-22
KR101423359B1 true KR101423359B1 (ko) 2014-07-24

Family

ID=39682091

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018719A Active KR101423359B1 (ko) 2007-02-08 2008-02-05 베벨 세정 디바이스

Country Status (6)

Country Link
US (1) US8137501B2 (https=)
JP (2) JP5475467B2 (https=)
KR (1) KR101423359B1 (https=)
CN (1) CN101606233B (https=)
TW (1) TWI419226B (https=)
WO (1) WO2008097996A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
US8323523B2 (en) * 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
JP2011029562A (ja) * 2009-07-29 2011-02-10 Fujitsu Semiconductor Ltd 半導体ウェハ端面の処理方法および半導体装置の製造方法
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8501283B2 (en) 2010-10-19 2013-08-06 Lam Research Corporation Methods for depositing bevel protective film
JP5523436B2 (ja) 2011-12-19 2014-06-18 三菱電機株式会社 半導体清浄装置および半導体清浄方法
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US12007689B2 (en) 2021-07-01 2024-06-11 Tokyo Electron Limited Apparatus and method for spin processing
US10566181B1 (en) * 2018-08-02 2020-02-18 Asm Ip Holding B.V. Substrate processing apparatuses and substrate processing methods
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP7840318B2 (ja) * 2020-09-01 2026-04-03 ラム リサーチ コーポレーション ウエハベベルエッジのプラズマ処理におけるアーキングの低減
KR102801223B1 (ko) * 2020-11-16 2025-04-30 삼성전자주식회사 플라즈마 공정 챔버
KR102727237B1 (ko) 2021-08-20 2024-11-08 주식회사 브러쉬텍 웨이퍼 베벨 영역 세정용 브러쉬
KR102777345B1 (ko) 2022-06-29 2025-03-07 주식회사 브러쉬텍 웨이퍼 세정용 무전분 브러쉬 및 그 제조방법
JP2024131171A (ja) * 2023-03-15 2024-09-30 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005701A (ja) * 2003-05-27 2005-01-06 Samsung Electronics Co Ltd ウェーハエッジエッチング装置及び方法
KR100585198B1 (ko) * 2003-07-18 2006-06-01 위순임 웨이퍼 에지 처리용 플라즈마 발생장치
JP2006339529A (ja) * 2005-06-03 2006-12-14 Tokyo Electron Ltd プラズマ処理室、電位制御装置、電位制御方法、プログラム及び記憶媒体

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
TW459225B (en) * 1999-02-01 2001-10-11 Origin Electric Bonding system and method
JP2001044147A (ja) 1999-08-04 2001-02-16 Mitsubishi Materials Silicon Corp 半導体ウェーハの面取り面の形成方法
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR100442194B1 (ko) 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
US7615131B2 (en) * 2003-05-12 2009-11-10 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4502198B2 (ja) 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
KR20070001493A (ko) 2005-06-29 2007-01-04 주식회사 하이닉스반도체 웨이퍼 베벨 식각용 디에프브이 장치
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005701A (ja) * 2003-05-27 2005-01-06 Samsung Electronics Co Ltd ウェーハエッジエッチング装置及び方法
KR100585198B1 (ko) * 2003-07-18 2006-06-01 위순임 웨이퍼 에지 처리용 플라즈마 발생장치
JP2006339529A (ja) * 2005-06-03 2006-12-14 Tokyo Electron Ltd プラズマ処理室、電位制御装置、電位制御方法、プログラム及び記憶媒体

Also Published As

Publication number Publication date
US20080190448A1 (en) 2008-08-14
JP5475467B2 (ja) 2014-04-16
US8137501B2 (en) 2012-03-20
CN101606233B (zh) 2011-07-27
JP2010518635A (ja) 2010-05-27
WO2008097996A1 (en) 2008-08-14
JP2013145884A (ja) 2013-07-25
CN101606233A (zh) 2009-12-16
JP5628352B2 (ja) 2014-11-19
TW200901308A (en) 2009-01-01
TWI419226B (zh) 2013-12-11
KR20090110870A (ko) 2009-10-22

Similar Documents

Publication Publication Date Title
KR101423359B1 (ko) 베벨 세정 디바이스
KR101426105B1 (ko) 베벨 식각 처리 동안 로우-ｋ 손상 방지
KR101854925B1 (ko) 베벨 에지를 프로세싱하기 위한 방법 및 장치
CN100524668C (zh) 防止在抗蚀剂剥离过程中对多孔低k材料的损伤的方法
US7491647B2 (en) Etch with striation control
JP5081917B2 (ja) フッ素除去プロセス
US7597816B2 (en) Wafer bevel polymer removal
JP5165306B2 (ja) 多孔質低ｋ誘電体層内に特徴を形成するための装置
KR20060126909A (ko) 피쳐 임계 치수의 감소
KR20090028532A (ko) 반도체 처리에 있어서 마스크를 제공하는 방법 및 장치
KR101171813B1 (ko) 유기 재료의 균일한 제거를 제공하는 방법
KR101380544B1 (ko) 핀 구조물 형성
WO2006057236A1 (ja) 基板処理方法および半導体装置の製造方法
KR20090034903A (ko) 상 변화 합금 식각
US20090291562A1 (en) Helium descumming
KR20070097408A (ko) 균일성 제어를 구비한 에칭
JP5089871B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170710

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180710

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20190709

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000