Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
  • H10P70/54—Cleaning of wafer edges
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Definitions

• the present invention relates to the formation of semiconductor devices. More particularly, the present invention relates to the selective removal of etch byproducts from a bevel edge during the formation of semiconductor devices.
• a substrate e.g., a semiconductor substrate or a glass panel such as one used in flat panel display manufacturing
• plasma is often employed.
• the substrate is divided into a plurality of dies, or rectangular areas. Each of the plurality of dies will become an integrated circuit.
• the substrate is then processed in a series of steps in which materials are selectively removed (or etched) and deposited. Control of the transistor gate critical dimension (CD) on the order of a few nanometers is a top priority, as each nanometer deviation from the target gate length may translate directly into the operational speed and/or operability of these devices.
• CD transistor gate critical dimension
• a substrate is coated with a thin film of hardened emulsion (such as a photoresist mask) prior to etching. Areas of the hardened emulsion are then selectively removed, causing parts of the underlying layer to become exposed.
• the substrate is then placed on a substrate support structure in a plasma processing chamber. An appropriate set of plasma gases is then introduced into the chamber and a plasma is generated to etch exposed areas of the substrate.
• etch byproducts for example polymers composed of Carbon (C), Oxygen (O), Nitrogen (N), Fluorine (F), etc.
• Etch plasma density is normally lower near the edge of the substrate, which results in accumulation of polymer byproducts on the top and on the bottom surfaces of the substrate bevel edge.
• there are no dies present near the edge of the substrate for example between about 5 mm to about 15 mm from the substrate edge.
• organic bonds that are normally strong and adhesive will eventually weaken during subsequent processing steps.
• Low-k materials are, by definition, those semiconductor-grade insulating materials that have a dielectric constant ("k") lower than 2.9.
• k dielectric constant
• conductive materials having low resistivity and insulators having low-k to reduce the capacitive coupling between adjacent metal lines.
• Low-k dielectric, carbon, or fluorine-doped films are being integrated into back-end-of-line (BEOL) stacks to improve device performance and allow for device scaling.
• low-k materials are porous, which introduces a host of process integration and materials compatibility difficulties.
• the balancing act between maintaining the film's integrity and integrating it properly and performing the necessary stripping, cleaning, and conditioning gets increasingly precarious.
• Patterning processes can also have a drastic impact on the integrity of the porous low-k.
• Current cleaning plasma gases used are O 2 and CF 4 or N 2 and CF 4 , which result in the migration of nitrogen, oxygen, or fluorine radicals into the substrate. The migration causes the k value to increase, which changes the composition and degrades the materials.
• an apparatus for removing material on a bevel of a wafer with a diameter is provided.
• a wafer support with a diameter that is less than the diameter of the wafer, wherein when a wafer is supported by the wafer support, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided.
• An RF power source is electrically connected to the wafer.
• a central cover is spaced apart from the wafer support so that when the wafer is placed on the wafer support the wafer is placed between the central cover and the wafer support, so that the central cover is on a second side of the wafer.
• a first electrically conductive ring is on the first side of and spaced apart from the wafer.
• a second electrically conductive ring is spaced apart from the wafer, wherein an outer edge of the wafer lies between the first electrically conductive ring and the second electrically conductive ring, and wherein the second electrically conductive ring is on the second side of the wafer.
• An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
• a method for cleaning a bevel portion of a wafer is provided.
• a wafer is placed on a wafer support where the wafer is electrically connected to an RF source and an upper surface of the wafer is spaced apart less than 1 mm from an central cover, wherein the wafer has an outer edge that extends beyond the wafer support, wherein the outer edge of the wafer is between a first conductive ring and a second conductive ring and is surrounded by a conductive liner.
• a bevel cleaning gas is provided through the central cover.
• An RF power is provided from the RF source to the wafer.
• a resistance between the liner and ground is set.
• FIG.' s IA and IB are schematic views of a bevel clean processing chamber that may be used in practicing the invention.
• FIG. 2 is a high level flow chart of a process that may be used in an embodiment of the invention.
• FIG. 3 is a more detailed flow chart of a step of cleaning a bevel edge.
• FIG.' s 4A and 4B are a schematic view of an embodiment of a plasma processing chamber during different stages.
• FIG.'s 5A-B illustrate a computer system, which is suitable for implementing a controller used in embodiments of the present invention.
• FIG. 1 is a schematic view of a bevel clean process chamber 100 that provides an embodiment of the invention.
• the bevel of the wafer is the edge of the wafer and part of the top surface of the wafer and bottom surface of the wafer near the edge of the wafer.
• the bevel clean process chamber 100 is enclosed by chamber walls 102.
• Chamber 100 has a wafer support 104 on which a wafer 110 is placed.
• the wafer support 104 is an electrostatic chuck, which is powered by a RF (radio frequency) power source 112.
• the wafer support 104 has a diameter that is less than a diameter of the wafer 110 so that the outer edge of the wafer 110 extends beyond the wafer support 104 around the circumference or perimeter of the wafer 110.
• a central cover 103 Spaced apart from the wafer support 104 and a top surface of the wafer 110 is a central cover 103, which acts as a gas distribution plate with a gas inlet 108, which is connected to a gas source 120.
• the central cover 103 is of a dielectric material.
• the central cover is electrically conductive and is grounded.
• the central cover 103 is spaced a distance less than 1 mm from the top surface of the wafer 110 on the wafer support 104.
• the central cover is spaced a distance of less than 0.6 mm from the top surface of the wafer 110. Most preferably, the central cover 103 is spaced between 0.3 mm to 0.4 mm from the top surface of the wafer 110.
• a first conductive ring 124 surrounds the wafer support 104. The first conductive ring 124 is of a conductive material.
• An insulator ring 128 is placed between the first conductive ring 124 to space apart and insulate the first conductive ring 124 from the wafer support 104.
• a second conductive ring 132 surrounds the central cover 103. The second conductive ring 132 is of a conductive material.
• An insulator ring 136 is placed between the second conductive ring 132 and the central cover 103 to space apart the second conductive ring 132 from the central cover 103. As shown, the outer edge of the wafer is disposed between the first conductive ring 124 and the second conductive ring 132 around the entire perimeter or circumference of the wafer.
• An electrically conductive liner 144 surrounds the outer edge of the wafer 110.
• the liner 144 is electrically connected to the first conductive ring 124.
• the electrically conductive liner 144 and the first conductive ring 124 are connected to ground through a switch 148.
• the switch is either an open or closed switch or a variable resistor. If the switch is a variable resistor, preferably the variable resistor provides a resistance between 1 ohm to 100 mega-ohms. More preferably, the variable resistor provides a variable resistance between 10 kilo-ohms and 100 kilo-ohms.
• the second conductive ring is grounded.
• FIG. 'S 5 A and 5B illustrate a computer system 500, which is suitable for implementing a controller 156 used in embodiments of the present invention.
• FIG. 5A shows one possible physical form of the computer system. Of course, the computer system may have many physical forms ranging from an integrated circuit, a printed circuit board, and a small handheld device up to a huge super computer.
• Computer system 500 includes a monitor 502, a display 504, a housing 506, a disk drive 508, a keyboard 510, and a mouse 512.
• Disk 514 is a computer-readable medium used to transfer data to and from computer system 500.
• FIG. 5B is an example of a block diagram for computer system 500. Attached to system bus 520 is a wide variety of subsystems.
• Processor(s) 522 also referred to as central processing units, or CPUs
• Memory 524 includes random access memory (RAM) and read-only memory (ROM).
• RAM random access memory
• ROM read-only memory
• RAM random access memory
• ROM read-only memory
• RAM random access memory
• ROM read-only memory
• a fixed disk 526 is also coupled bi-directionally to CPU 522; it provides additional data storage capacity and may also include any of the computer-readable media described below.
• Fixed disk 526 may be used to store programs, data, and the like and is typically a secondary storage medium (such as a hard disk) that is slower than primary storage. It will be appreciated that the information retained within fixed disk 526 may, in appropriate cases, be incorporated in standard fashion as virtual memory in memory 524.
• Removable disk 514 may take the form of any of the computer-readable media described below.
• CPU 522 is also coupled to a variety of input/output devices, such as display 504, keyboard 510, mouse 512, and speakers 530.
• an input/output device may be any of: video displays, track balls, mice, keyboards, microphones, touch- sensitive displays, transducer card readers, magnetic or paper tape readers, tablets, styluses, voice or handwriting recognizers, biometrics readers, or other computers.
• CPU 522 optionally may be coupled to another computer or telecommunications network using network interface 540. With such a network interface, it is contemplated that the CPU might receive information from the network, or might output information to the network in the course of performing the above-described method steps.
• embodiments of the present invention may execute solely upon CPU 522 or may execute over a network such as the Internet in conjunction with a remote CPU that shares a portion of the processing.
• embodiments of the present invention further relate to computer storage products with a computer-readable medium that have computer code thereon for performing various computer- implemented operations.
• the media and computer code may be those specially designed and constructed for the purposes of the present invention, or they may be of the kind well known and available to those having skill in the computer software arts.
• Examples of computer-readable media include, but are not limited to: magnetic media such as hard disks, floppy disks, and magnetic tape; optical media such as CD-ROMs and holographic devices; magneto- optical media such as floptical disks; and hardware devices that are specially configured to store and execute program code, such as application- specific integrated circuits (ASICs), programmable logic devices (PLDs) and ROM and RAM devices.
• Examples of computer code include machine code, such as produced by a compiler, and files containing higher level code that are executed by a computer using an interpreter.
• Computer readable media may also be computer code transmitted by a computer data signal embodied in a carrier wave and representing a sequence of instructions that are executable by a processor.
• FIG. 2 is a flow chart of a process that uses the above device.
• a photoresist mask is provided over a wafer (step 200).
• the wafer is transferred to the bevel clean chamber 100 (step 202).
• a bevel edge clean is performed in the bevel clean chamber (step 204).
• FIG. 3 is a more detailed flow chart of the step of cleaning the bevel edge.
• a bevel cleaning gas is provided (step 304).
• the bevel cleaning gas is formed into a plasma (step 308).
• the switch setting is changed (step 312). In other processes, the switch setting is not changed during the cleaning processes, but at other times.
• An example of a recipe for a bevel clean is as follows: A chamber pressure is set at 1500 mTorr. A bevel clean gas of 500 seem of 02 is provided. The RF source provides 600 watts at 13.56 MHz. The switch setting is changed from 1 to 10OM.
• the bevel clean removes polymer either selectively or nonselectively with respect to another dielectric such as silicon oxide from the bevel edge.
• FIG. IB is an enlarged view of section B in FIG. IA that shows a film of polymer with possibly another dielectric 117 on the edge of a wafer 110 before the film is removed by the cleaning process.
• the wafer is transferred from the bevel etch chamber to a plasma etch chamber (step 206).
• Features are etched into the etch layer in the plasma etch chamber (step 208).
• the mask is removed using a stripping or ashing process (step 210).
• the wafer is transferred to the bevel etch chamber (step 212).
• the wafer is subjected to another bevel clean (step 214). In other embodiments, one or more bevel cleaning processes may be used at different times.
• FIG. 4A is a schematic view of the bevel etch chamber 400 during a bevel clean process
• the switch 448 is a switch that has open and closed positions.
• the controller 456 has the cleaning gas source 420 provide a cleaning gas and the RF source 412 excite the cleaning gas to a plasma. Because the central cover 403 is less than 1 mm from the top surface of the wafer 410 on the wafer support, plasma is not maintained between the central cover 403 and the wafer support 404, but instead between the first conductive ring 424 and the second conductive ring 432.
• a bevel cleaning gas in this example may comprise at least one of CO 2 or O 2 and a halogen, such as fluorine.
• FIG. 4B is a schematic view of the bevel etch chamber 400 where the switch 448 is closed causing the first conductive ring 424 and the liner 444 to be grounded, while the second conductive ring 432 is also grounded.
• This decreased plasma confinement provides a slower bevel cleaning with higher selectivity towards the photoresist. It is believed that the lower density plasma reduces the density of fluorine so that the silicon oxide is etched less. It was unexpectedly found that the photoresist cleaning is not as significantly reduced, thus providing a more selective cleaning.
• the bevel cleaning gas may be at least one of CO 2 , CO, C x H y , H 2 , NH 3 , C x H y F Z; or a combination thereof.
• the pressure may be maintained at 500 mTorr-10 Torr. More preferably, the pressure for cleaning the bevel edge is between 100 mT-10 T. 100 to 2000 Watts of power are supplied to the plasma processing chamber at about 2 - 27 MHz. In one embodiment of a recipe, 5 - 3000sccm of cleaning gas may be used at a temperature of 2O 0 C for longer than 5 seconds.
• the liner is part of the chamber wall. In another embodiment, the liner is electrically connected to the second conductive ring, but not the first conductive ring and the first conductive ring is grounded. In another embodiment, the liner is electrically connected to both the first and second conductive rings. In another embodiment, the liner is connected to neither conductive ring. In another embodiment, the liner is parallel to the chamber wall. [0034] In another embodiment, the wafer support is of a dielectric material, and the RF power source is electrically connected to the wafer through another means, such as a direct electrical connection between the power source and the wafer. The wafer acts as an electrode.
• the central cover is of a conductive material and is movable to increase the spacing between the surface of the wafer and the central cover.
• the space is increased so that plasma may be maintained between the central cover and the wafer, so that the bevel etch chamber may be used as an etch chamber for etching features.

Landscapes

• Cleaning Or Drying Semiconductors (AREA)
• Drying Of Semiconductors (AREA)
• Plasma Technology (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

Family

ID=39682091

Family Applications (1)

Country Status (6)

Cited By (3)

Families Citing this family (19)

Citations (4)

Family Cites Families (14)

• 2007
  • 2007-02-08 US US11/672,922 patent/US8137501B2/en active Active
• 2008
  • 2008-02-04 TW TW097104234A patent/TWI419226B/zh active
  • 2008-02-05 KR KR1020097018719A patent/KR101423359B1/ko active Active
  • 2008-02-05 CN CN2008800043847A patent/CN101606233B/zh active Active
  • 2008-02-05 WO PCT/US2008/053081 patent/WO2008097996A1/en not_active Ceased
  • 2008-02-05 JP JP2009549208A patent/JP5475467B2/ja active Active
• 2013
  • 2013-01-16 JP JP2013005371A patent/JP5628352B2/ja active Active

Patent Citations (4)

Also Published As

Similar Documents

Legal Events