TWI419226B - 斜角部清理裝置 - Google Patents

斜角部清理裝置 Download PDF

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Publication number
TWI419226B
TWI419226B TW097104234A TW97104234A TWI419226B TW I419226 B TWI419226 B TW I419226B TW 097104234 A TW097104234 A TW 097104234A TW 97104234 A TW97104234 A TW 97104234A TW I419226 B TWI419226 B TW I419226B
Authority
TW
Taiwan
Prior art keywords
wafer
conductive
conductive ring
material removal
removal device
Prior art date
Application number
TW097104234A
Other languages
English (en)
Chinese (zh)
Other versions
TW200901308A (en
Inventor
金允聖
貝利三世 安祖Ｄ
薩克士頓 葛瑞格里Ｓ
金其昌
庫提 安卓斯
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200901308A publication Critical patent/TW200901308A/zh
Application granted granted Critical
Publication of TWI419226B publication Critical patent/TWI419226B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW097104234A 2007-02-08 2008-02-04 斜角部清理裝置 TWI419226B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/672,922 US8137501B2 (en) 2007-02-08 2007-02-08 Bevel clean device

Publications (2)

Publication Number Publication Date
TW200901308A TW200901308A (en) 2009-01-01
TWI419226B true TWI419226B (zh) 2013-12-11

Family

ID=39682091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104234A TWI419226B (zh) 2007-02-08 2008-02-04 斜角部清理裝置

Country Status (6)

Country Link
US (1) US8137501B2 (https=)
JP (2) JP5475467B2 (https=)
KR (1) KR101423359B1 (https=)
CN (1) CN101606233B (https=)
TW (1) TWI419226B (https=)
WO (1) WO2008097996A1 (https=)

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US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
US8323523B2 (en) * 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
JP2011029562A (ja) * 2009-07-29 2011-02-10 Fujitsu Semiconductor Ltd 半導体ウェハ端面の処理方法および半導体装置の製造方法
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8501283B2 (en) 2010-10-19 2013-08-06 Lam Research Corporation Methods for depositing bevel protective film
JP5523436B2 (ja) 2011-12-19 2014-06-18 三菱電機株式会社 半導体清浄装置および半導体清浄方法
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US12007689B2 (en) 2021-07-01 2024-06-11 Tokyo Electron Limited Apparatus and method for spin processing
US10566181B1 (en) * 2018-08-02 2020-02-18 Asm Ip Holding B.V. Substrate processing apparatuses and substrate processing methods
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP7840318B2 (ja) * 2020-09-01 2026-04-03 ラム リサーチ コーポレーション ウエハベベルエッジのプラズマ処理におけるアーキングの低減
KR102801223B1 (ko) * 2020-11-16 2025-04-30 삼성전자주식회사 플라즈마 공정 챔버
KR102727237B1 (ko) 2021-08-20 2024-11-08 주식회사 브러쉬텍 웨이퍼 베벨 영역 세정용 브러쉬
KR102777345B1 (ko) 2022-06-29 2025-03-07 주식회사 브러쉬텍 웨이퍼 세정용 무전분 브러쉬 및 그 제조방법
JP2024131171A (ja) * 2023-03-15 2024-09-30 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
TW200501256A (en) * 2003-05-27 2005-01-01 Samsung Electronics Co Ltd Wafer edge etching apparatus and method
CN1873911A (zh) * 2005-06-03 2006-12-06 东京毅力科创株式会社 等离子体处理室、电位控制装置、方法、程序和存储介质

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JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
TW459225B (en) * 1999-02-01 2001-10-11 Origin Electric Bonding system and method
JP2001044147A (ja) 1999-08-04 2001-02-16 Mitsubishi Materials Silicon Corp 半導体ウェーハの面取り面の形成方法
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR100442194B1 (ko) 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
US7615131B2 (en) * 2003-05-12 2009-11-10 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR100585198B1 (ko) * 2003-07-18 2006-06-01 위순임 웨이퍼 에지 처리용 플라즈마 발생장치
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4502198B2 (ja) 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
KR20070001493A (ko) 2005-06-29 2007-01-04 주식회사 하이닉스반도체 웨이퍼 베벨 식각용 디에프브이 장치
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200501256A (en) * 2003-05-27 2005-01-01 Samsung Electronics Co Ltd Wafer edge etching apparatus and method
CN1873911A (zh) * 2005-06-03 2006-12-06 东京毅力科创株式会社 等离子体处理室、电位控制装置、方法、程序和存储介质

Also Published As

Publication number Publication date
US20080190448A1 (en) 2008-08-14
JP5475467B2 (ja) 2014-04-16
US8137501B2 (en) 2012-03-20
CN101606233B (zh) 2011-07-27
JP2010518635A (ja) 2010-05-27
WO2008097996A1 (en) 2008-08-14
JP2013145884A (ja) 2013-07-25
CN101606233A (zh) 2009-12-16
JP5628352B2 (ja) 2014-11-19
KR101423359B1 (ko) 2014-07-24
TW200901308A (en) 2009-01-01
KR20090110870A (ko) 2009-10-22

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