TWI419226B - 斜角部清理裝置 - Google Patents

斜角部清理裝置 Download PDF

Info

Publication number
TWI419226B
TWI419226B TW097104234A TW97104234A TWI419226B TW I419226 B TWI419226 B TW I419226B TW 097104234 A TW097104234 A TW 097104234A TW 97104234 A TW97104234 A TW 97104234A TW I419226 B TWI419226 B TW I419226B
Authority
TW
Taiwan
Prior art keywords
wafer
conductive
conductive ring
material removal
removal device
Prior art date
Application number
TW097104234A
Other languages
English (en)
Other versions
TW200901308A (en
Inventor
Yunsang Kim
Iii Andrew D Bailey
Gregory S Sexton
Keecham Kim
Andras Kuthi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200901308A publication Critical patent/TW200901308A/zh
Application granted granted Critical
Publication of TWI419226B publication Critical patent/TWI419226B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Claims (21)

  1. 一種材料移除設備，用以在具有一直徑之一晶圓的一斜角部上移除材料，該設備包含：一晶圓支撐件，具有一直徑小於該晶圓之該直徑，其中當一晶圓由該晶圓支撐件所支撐時，該晶圓支撐件位於該晶圓之一第一側上，且環繞該晶圓，該晶圓之外緣延伸超過該晶圓支撐件；一RF電源，電連接至該晶圓；一中央罩蓋，與該晶圓支撐件隔開，使得當該晶圓置放於該晶圓支撐件上時，該晶圓係位於該中央罩蓋與該晶圓支撐件之間，以使該中央罩蓋位於該晶圓之一第二側上；一第一導電環，在該晶圓之該第一側上且與該晶圓隔開；一第二導電環，與該晶圓隔開，其中該晶圓之一外緣位於該第一導電環與該第二導電環之間，且其中該第二導電環位於該晶圓之該第二側上；一導電襯墊，圍繞該晶圓之該外緣，且與該第一導電環及該第二導電環隔開；及一開關，位於該襯墊與接地端之間，以容許該襯墊得以從接地切換成浮動。
  2. 如申請專利範圍第1項之材料移除設備，其中該中央罩蓋與該晶圓之一上表面相隔不到1mm。
  3. 如申請專利範圍第2項之材料移除設備，其中該中央罩蓋係由一介電材料製成以形成一絕緣體。
  4. 如申請專利範圍第3項之材料移除設備，其中環繞該晶圓之整個周界，該晶圓之外緣位於該第一導電環與該第二導電環之間。
  5. 如申請專利範圍第4項之材料移除設備，其中該導電襯墊係 電連接至該第一或第二導電環至少其中一者。
  6. 如申請專利範圍第5項之材料移除設備，其中該第一導電環圍繞該晶圓支撐件並與該晶圓支撐件隔開，且其中該第二導電環圍繞該中央罩蓋並與該中央罩蓋隔開。
  7. 如申請專利範圍第6項之材料移除設備，其中該第一或第二導電環其中之一未電連接至該導電襯墊且係為接地。
  8. 如申請專利範圍第7項之材料移除設備，其中該開關包含一可變電阻器，其提供從至少1歐姆至不超過100百萬歐姆的可變電阻。
  9. 如申請專利範圍第8項之材料移除設備，其中該晶圓支撐件為一導電電極，且提供該RF源與該晶圓之間的一電連接。
  10. 如申請專利範圍第7項之材料移除設備，其中該開關具有造成該襯墊浮動的一斷路狀態以及使該襯墊接地的一導通狀態。
  11. 如申請專利範圍第7項之材料移除設備，其中該第一導電環係與該晶圓支撐件電性絕緣。
  12. 如申請專利範圍第7項之材料移除設備，更包含：一腔室，圍繞該晶圓支撐件、第一導電環、第二導電環、中央罩蓋及導電襯墊；及一斜角部清理氣體源，與該腔室呈流體連通。
  13. 如申請專利範圍第1項之材料移除設備，其中該導電襯墊係電連接至該第一或第二導電環材料移除設備至少其中之一。
  14. 如申請專利範圍第1項之材料移除設備，其中該第一導電環圍繞該晶圓支撐件並與該晶圓支撐件隔開，且其中該第二導電環圍繞該中央罩蓋並與該中央罩蓋隔開。
  15. 如申請專利範圍第1項之材料移除設備，其中該第一或第二導電環僅有其中之一係電連接至該導電襯墊且係為接地。
  16. 如申請專利範圍第1項之材料移除設備，其中在圍繞該晶圓之該外緣之該導電襯墊與該第一導電環及該第二導電環之間的間距，足以容許電漿通過在該導電襯墊與該第一導電環之間的空間及在該導電襯墊與該第二導電環之間的空間。
  17. 如申請專利範圍第1項之材料移除設備，其中該開關容許該襯墊成為浮動、不連接至電源。
  18. 一種晶圓之斜角部部分的清理方法，包含：置放一晶圓於一晶圓支撐件上，其中該晶圓係電連接至一RF源，且該晶圓之一上表面係與一中央罩蓋相隔不到1mm；其中該晶圓具有延伸超過該晶圓支撐件的一外緣，其中該晶圓之該外緣係介於一第一導電環與一第二導電環之間，且由一導電襯墊所圍繞，該導電襯墊與該第一導電環及該第二導電環隔開；經由該中央罩蓋提供一斜角部清理氣體；從該RF源提供RF電力至該晶圓；及設定該襯墊與接地端之間的一電阻。
  19. 如申請專利範圍第18項之晶圓之斜角部部分的清理方法，更包含改變該襯墊與接地端之間的該電阻。
  20. 如申請專利範圍第19項之晶圓之斜角部部分的清理方法，其中改變該電阻包含使一開關成斷路或導通。
  21. 如申請專利範圍第19項之晶圓之斜角部部分的清理方法，其中改變該電阻是利用一可變電阻器加以完成。
TW097104234A 2007-02-08 2008-02-04 斜角部清理裝置 TWI419226B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/672,922 US8137501B2 (en) 2007-02-08 2007-02-08 Bevel clean device

Publications (2)

Publication Number Publication Date
TW200901308A TW200901308A (en) 2009-01-01
TWI419226B true TWI419226B (zh) 2013-12-11

Family

ID=39682091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104234A TWI419226B (zh) 2007-02-08 2008-02-04 斜角部清理裝置

Country Status (6)

Country Link
US (1) US8137501B2 (zh)
JP (2) JP5475467B2 (zh)
KR (1) KR101423359B1 (zh)
CN (1) CN101606233B (zh)
TW (1) TWI419226B (zh)
WO (1) WO2008097996A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
US8323523B2 (en) 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
JP2011029562A (ja) * 2009-07-29 2011-02-10 Fujitsu Semiconductor Ltd 半導体ウェハ端面の処理方法および半導体装置の製造方法
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8501283B2 (en) 2010-10-19 2013-08-06 Lam Research Corporation Methods for depositing bevel protective film
JP5523436B2 (ja) 2011-12-19 2014-06-18 三菱電機株式会社 半導体清浄装置および半導体清浄方法
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
JP6993797B2 (ja) 2017-06-21 2022-01-14 東芝ライフスタイル株式会社 冷蔵庫
US10566181B1 (en) * 2018-08-02 2020-02-18 Asm Ip Holding B.V. Substrate processing apparatuses and substrate processing methods
JP7538815B2 (ja) * 2019-05-15 2024-08-22 アプライド マテリアルズ インコーポレイテッド 基板処理のための斜角剥離及び欠陥の解決策
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
WO2022051073A1 (en) * 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
US12007689B2 (en) 2021-07-01 2024-06-11 Tokyo Electron Limited Apparatus and method for spin processing
KR20230028012A (ko) 2021-08-20 2023-02-28 주식회사 브러쉬텍 웨이퍼 베벨 영역 세정용 브러쉬
KR20240002318A (ko) 2022-06-29 2024-01-05 주식회사 브러쉬텍 웨이퍼 세정용 무전분 브러쉬 및 그 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200501256A (en) * 2003-05-27 2005-01-01 Samsung Electronics Co Ltd Wafer edge etching apparatus and method
CN1873911A (zh) * 2005-06-03 2006-12-06 东京毅力科创株式会社 等离子体处理室、电位控制装置、方法、程序和存储介质

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
TW459225B (en) * 1999-02-01 2001-10-11 Origin Electric Bonding system and method
JP2001044147A (ja) 1999-08-04 2001-02-16 Mitsubishi Materials Silicon Corp 半導体ウェーハの面取り面の形成方法
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
WO2004100247A1 (ja) * 2003-05-12 2004-11-18 Sosul Co., Ltd. プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステム
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR100585198B1 (ko) * 2003-07-18 2006-06-01 위순임 웨이퍼 에지 처리용 플라즈마 발생장치
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4502198B2 (ja) * 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
KR20070001493A (ko) 2005-06-29 2007-01-04 주식회사 하이닉스반도체 웨이퍼 베벨 식각용 디에프브이 장치
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200501256A (en) * 2003-05-27 2005-01-01 Samsung Electronics Co Ltd Wafer edge etching apparatus and method
CN1873911A (zh) * 2005-06-03 2006-12-06 东京毅力科创株式会社 等离子体处理室、电位控制装置、方法、程序和存储介质

Also Published As

Publication number Publication date
US20080190448A1 (en) 2008-08-14
TW200901308A (en) 2009-01-01
CN101606233B (zh) 2011-07-27
KR101423359B1 (ko) 2014-07-24
JP5475467B2 (ja) 2014-04-16
JP2013145884A (ja) 2013-07-25
JP5628352B2 (ja) 2014-11-19
CN101606233A (zh) 2009-12-16
KR20090110870A (ko) 2009-10-22
WO2008097996A1 (en) 2008-08-14
US8137501B2 (en) 2012-03-20
JP2010518635A (ja) 2010-05-27

Similar Documents

Publication Publication Date Title
TWI419226B (zh) 斜角部清理裝置
JP2010518635A5 (zh)
JP4913740B2 (ja) プラズマ加工システム
TWI354309B (en) Plasma processing reactor with multiple capacitive
KR101826695B1 (ko) 정전 척 및 웨이퍼 처리장치
TWI708524B (zh) 具有可拆卸高電阻率氣體分配板的噴淋頭
JP5893823B2 (ja) 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
TWI613756B (zh) 用於薄基板搬運的靜電載體
JP2007250967A5 (zh)
TW200406839A (en) A cathode pedestal for a plasma etch reactor
CN1612314A (zh) 静电吸附装置、等离子体处理装置及等离子体处理方法
CN102737940A (zh) 等离子体处理装置
US20160172227A1 (en) Electrostatic chuck design for high temperature rf applications
KR20150094686A (ko) 프로세스 챔버에 플라즈마를 제공하기 위한 장치
TW201421611A (zh) 晶圓狀物件之液體處理用設備
JP5820308B2 (ja) 静電チャック及びウェーハを支持する方法。
CN110100297A (zh) 射频电容耦合蚀刻反应器
JP7156954B2 (ja) プラズマエッチングチャンバ及びプラズマエッチング方法
JP5764461B2 (ja) プラズマ処理装置
JP2015162618A5 (zh)
TW200903627A (en) Plasma processing apparatus and structure therein
CN108155081A (zh) 基底处理设备
KR20170002383A (ko) 히터 급전 기구 및 스테이지의 온도 제어 방법
JP6016349B2 (ja) 基板ホルダー及び真空処理装置
US9484180B2 (en) Plasma processing method and plasma processing apparatus