JP5764461B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5764461B2 JP5764461B2 JP2011231986A JP2011231986A JP5764461B2 JP 5764461 B2 JP5764461 B2 JP 5764461B2 JP 2011231986 A JP2011231986 A JP 2011231986A JP 2011231986 A JP2011231986 A JP 2011231986A JP 5764461 B2 JP5764461 B2 JP 5764461B2
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- Prior art keywords
- gas
- upper electrode
- chamber
- dispersion plate
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000007789 gas Substances 0.000 claims description 126
- 239000006185 dispersion Substances 0.000 claims description 39
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000002826 coolant Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
102 処理室
104 ライン室
106 第1のガス拡散室
108 第2のガス拡散室
110 上部電極
112 下部電極
114 チャンバー壁
116 分散板
118 シャワー板
120 第1のガス管
122 第2のガス管
124 処理用ガス供給源
126 不活性ガス供給源に接続されたガス導入口
128 温度計
130 分散板中央部
132 分散板周辺部
140 冷却媒体経路
142 迂回部
144 第1のガス管120のガス導入口
146 温度計の接続箇所
d1 第1のガス管120の主要部の断面の直径
d2 第2のガス管122の主要部の断面の直径
d3 第1のガス管120のガス導入口の直径
d4 分散板中央部130の直径
Claims (5)
- 上部電極及び下部電極を有し、チャンバー壁に覆われた処理室と、
前記処理室と、前記上部電極及び絶縁物により隔てられ、前記チャンバー壁に覆われたライン室と、を有し、
前記処理室は、分散板とシャワー板との間の第1のガス拡散室に接続され、
前記第1のガス拡散室は、前記分散板と前記上部電極との間の第2のガス拡散室に接続され、
前記第2のガス拡散室は前記上部電極内の第1のガス管に接続され、
前記第1のガス管は第2のガス管に接続され、
前記第2のガス管は処理用ガス供給源に接続され、
前記ライン室は、不活性ガス供給源に接続されたガス導入口と、同軸形状の前記上部電極と前記チャンバー壁とを有し、
前記分散板は、ガス孔が設けられていない分散板中央部と、複数のガス孔が設けられている分散板周辺部と、を有することを特徴とするプラズマ処理装置。 - 請求項1において、
前記シャワー板には複数のガス孔が設けられており、
前記シャワー板のガス孔の数は、前記分散板のガス孔の数よりも多いことを特徴とするプラズマ処理装置。 - 請求項1において、
前記シャワー板には複数のガス孔が設けられており、
前記シャワー板のガス孔の一主表面における総面積は、前記分散板のガス孔の一主表面における総面積よりも大きいことを特徴とするプラズマ処理装置。 - 請求項1乃至請求項3のいずれか一において、
前記上部電極には温度計が接続され、
前記上部電極における前記温度計の接続箇所は、前記上部電極の電極面の中心点を基準として前記上部電極内の前記第1のガス管のガス導入口と点対称であることを特徴とするプラズマ処理装置。 - 請求項1乃至請求項4のいずれか一において、
前記上部電極には、前記上部電極内の前記第1のガス管のガス導入口近傍を迂回する冷却媒体の経路が設けられていることを特徴とするプラズマ処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011231986A JP5764461B2 (ja) | 2010-10-26 | 2011-10-21 | プラズマ処理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010239266 | 2010-10-26 | ||
JP2010239266 | 2010-10-26 | ||
JP2011231986A JP5764461B2 (ja) | 2010-10-26 | 2011-10-21 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012107329A JP2012107329A (ja) | 2012-06-07 |
JP2012107329A5 JP2012107329A5 (ja) | 2014-12-04 |
JP5764461B2 true JP5764461B2 (ja) | 2015-08-19 |
Family
ID=45973239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011231986A Expired - Fee Related JP5764461B2 (ja) | 2010-10-26 | 2011-10-21 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120100309A1 (ja) |
JP (1) | JP5764461B2 (ja) |
KR (1) | KR20120043636A (ja) |
CN (1) | CN102456533B (ja) |
TW (1) | TWI547591B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5948040B2 (ja) | 2010-11-04 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法及び半導体装置の作製方法 |
US8815635B2 (en) | 2010-11-05 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of photoelectric conversion device |
CN104835876B (zh) * | 2015-04-27 | 2018-01-05 | 北京金晟阳光科技有限公司 | 气体均匀布气装置 |
JP2017073455A (ja) * | 2015-10-07 | 2017-04-13 | 東京エレクトロン株式会社 | 接合システム |
KR102546317B1 (ko) * | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR102670124B1 (ko) | 2018-05-03 | 2024-05-28 | 주성엔지니어링(주) | 기판 처리 장치 |
NO345894B1 (en) * | 2019-11-18 | 2021-10-04 | Nfm As | Helmet attachment system and associated equipment |
JP7329130B2 (ja) * | 2021-05-27 | 2023-08-17 | 株式会社日立ハイテク | プラズマ処理装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08153679A (ja) * | 1994-11-29 | 1996-06-11 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP3565311B2 (ja) * | 1997-12-17 | 2004-09-15 | アルプス電気株式会社 | プラズマ処理装置 |
JP4130255B2 (ja) * | 1998-04-08 | 2008-08-06 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP2001023955A (ja) * | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP4454781B2 (ja) * | 2000-04-18 | 2010-04-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6553932B2 (en) * | 2000-05-12 | 2003-04-29 | Applied Materials, Inc. | Reduction of plasma edge effect on plasma enhanced CVD processes |
JP3600144B2 (ja) * | 2000-09-22 | 2004-12-08 | アルプス電気株式会社 | プラズマ処理装置の性能評価方法、保守方法、及び性能管理システム、並びにプラズマ処理装置及びプラズマ処理装置の性能確認システム |
JP4583591B2 (ja) * | 2000-12-15 | 2010-11-17 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
US20030124842A1 (en) * | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
KR100520900B1 (ko) * | 2003-03-13 | 2005-10-12 | 주식회사 아이피에스 | Ald 박막증착방법 |
JP4763974B2 (ja) * | 2003-05-27 | 2011-08-31 | パナソニック電工株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2005019606A (ja) * | 2003-06-25 | 2005-01-20 | Anelva Corp | プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置 |
US7381291B2 (en) * | 2004-07-29 | 2008-06-03 | Asm Japan K.K. | Dual-chamber plasma processing apparatus |
JP2006128485A (ja) * | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
KR100731164B1 (ko) * | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
JP4749785B2 (ja) * | 2005-07-19 | 2011-08-17 | 東京エレクトロン株式会社 | ガス処理装置 |
JP5044931B2 (ja) * | 2005-10-31 | 2012-10-10 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
TWI329136B (en) * | 2005-11-04 | 2010-08-21 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
JP2008091805A (ja) * | 2006-10-05 | 2008-04-17 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、及び基板処理装置 |
JP5122805B2 (ja) * | 2006-12-20 | 2013-01-16 | 株式会社アルバック | 成膜装置 |
CN102272897A (zh) * | 2009-01-09 | 2011-12-07 | 株式会社爱发科 | 等离子体处理装置以及等离子体cvd成膜方法 |
JP5328685B2 (ja) * | 2010-01-28 | 2013-10-30 | 三菱電機株式会社 | プラズマ処理装置及びプラズマ処理方法 |
ATE551439T1 (de) * | 2010-02-08 | 2012-04-15 | Roth & Rau Ag | PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE |
JP5749071B2 (ja) * | 2010-05-18 | 2015-07-15 | 株式会社半導体エネルギー研究所 | プラズマ処理装置 |
TWI568319B (zh) * | 2011-10-05 | 2017-01-21 | 應用材料股份有限公司 | 電漿處理設備及其蓋組件(二) |
-
2011
- 2011-10-07 KR KR1020110102387A patent/KR20120043636A/ko not_active Application Discontinuation
- 2011-10-14 US US13/273,258 patent/US20120100309A1/en not_active Abandoned
- 2011-10-19 TW TW100137909A patent/TWI547591B/zh not_active IP Right Cessation
- 2011-10-21 JP JP2011231986A patent/JP5764461B2/ja not_active Expired - Fee Related
- 2011-10-25 CN CN201110354613.1A patent/CN102456533B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI547591B (zh) | 2016-09-01 |
KR20120043636A (ko) | 2012-05-04 |
CN102456533A (zh) | 2012-05-16 |
CN102456533B (zh) | 2016-05-25 |
TW201221689A (en) | 2012-06-01 |
US20120100309A1 (en) | 2012-04-26 |
JP2012107329A (ja) | 2012-06-07 |
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