CN101606233B - 斜面清洁装置 - Google Patents

斜面清洁装置 Download PDF

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Publication number
CN101606233B
CN101606233B CN2008800043847A CN200880004384A CN101606233B CN 101606233 B CN101606233 B CN 101606233B CN 2008800043847 A CN2008800043847 A CN 2008800043847A CN 200880004384 A CN200880004384 A CN 200880004384A CN 101606233 B CN101606233 B CN 101606233B
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China
Prior art keywords
wafer
conducting ring
die support
central cover
lining
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CN2008800043847A
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Chinese (zh)
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CN101606233A (zh
Inventor
金允尚
安德鲁·贝利三世
格雷格·塞克斯顿
金基灿
安德拉斯·库蒂
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2008800043847A 2007-02-08 2008-02-05 斜面清洁装置 Active CN101606233B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/672,922 US8137501B2 (en) 2007-02-08 2007-02-08 Bevel clean device
US11/672,922 2007-02-08
PCT/US2008/053081 WO2008097996A1 (en) 2007-02-08 2008-02-05 Bevel clean device

Publications (2)

Publication Number Publication Date
CN101606233A CN101606233A (zh) 2009-12-16
CN101606233B true CN101606233B (zh) 2011-07-27

Family

ID=39682091

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800043847A Active CN101606233B (zh) 2007-02-08 2008-02-05 斜面清洁装置

Country Status (6)

Country Link
US (1) US8137501B2 (https=)
JP (2) JP5475467B2 (https=)
KR (1) KR101423359B1 (https=)
CN (1) CN101606233B (https=)
TW (1) TWI419226B (https=)
WO (1) WO2008097996A1 (https=)

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US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
US8323523B2 (en) * 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
JP2011029562A (ja) * 2009-07-29 2011-02-10 Fujitsu Semiconductor Ltd 半導体ウェハ端面の処理方法および半導体装置の製造方法
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8501283B2 (en) 2010-10-19 2013-08-06 Lam Research Corporation Methods for depositing bevel protective film
JP5523436B2 (ja) 2011-12-19 2014-06-18 三菱電機株式会社 半導体清浄装置および半導体清浄方法
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US12007689B2 (en) 2021-07-01 2024-06-11 Tokyo Electron Limited Apparatus and method for spin processing
US10566181B1 (en) * 2018-08-02 2020-02-18 Asm Ip Holding B.V. Substrate processing apparatuses and substrate processing methods
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP7840318B2 (ja) * 2020-09-01 2026-04-03 ラム リサーチ コーポレーション ウエハベベルエッジのプラズマ処理におけるアーキングの低減
KR102801223B1 (ko) * 2020-11-16 2025-04-30 삼성전자주식회사 플라즈마 공정 챔버
KR102727237B1 (ko) 2021-08-20 2024-11-08 주식회사 브러쉬텍 웨이퍼 베벨 영역 세정용 브러쉬
KR102777345B1 (ko) 2022-06-29 2025-03-07 주식회사 브러쉬텍 웨이퍼 세정용 무전분 브러쉬 및 그 제조방법
JP2024131171A (ja) * 2023-03-15 2024-09-30 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

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US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
CN1692475A (zh) * 2003-05-12 2005-11-02 索绍株式会社 等离子腐蚀室及使用其的等离子腐蚀系统

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JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
TW459225B (en) * 1999-02-01 2001-10-11 Origin Electric Bonding system and method
JP2001044147A (ja) 1999-08-04 2001-02-16 Mitsubishi Materials Silicon Corp 半導体ウェーハの面取り面の形成方法
KR100442194B1 (ko) 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
DE102004024893A1 (de) * 2003-05-27 2005-04-14 Samsung Electronics Co., Ltd., Suwon Vorrichtung und Verfahren zum Ätzen eines Wafer-Rands
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR100585198B1 (ko) * 2003-07-18 2006-06-01 위순임 웨이퍼 에지 처리용 플라즈마 발생장치
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4502198B2 (ja) 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
JP4628874B2 (ja) * 2005-06-03 2011-02-09 東京エレクトロン株式会社 プラズマ処理装置及び電位制御装置
KR20070001493A (ko) 2005-06-29 2007-01-04 주식회사 하이닉스반도체 웨이퍼 베벨 식각용 디에프브이 장치
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
CN1692475A (zh) * 2003-05-12 2005-11-02 索绍株式会社 等离子腐蚀室及使用其的等离子腐蚀系统

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
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JP特开2006-120875A 2006.05.11

Also Published As

Publication number Publication date
US20080190448A1 (en) 2008-08-14
JP5475467B2 (ja) 2014-04-16
US8137501B2 (en) 2012-03-20
JP2010518635A (ja) 2010-05-27
WO2008097996A1 (en) 2008-08-14
JP2013145884A (ja) 2013-07-25
CN101606233A (zh) 2009-12-16
JP5628352B2 (ja) 2014-11-19
KR101423359B1 (ko) 2014-07-24
TW200901308A (en) 2009-01-01
TWI419226B (zh) 2013-12-11
KR20090110870A (ko) 2009-10-22

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