JP2012505313A5 - - Google Patents
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- JP2012505313A5 JP2012505313A5 JP2011531218A JP2011531218A JP2012505313A5 JP 2012505313 A5 JP2012505313 A5 JP 2012505313A5 JP 2011531218 A JP2011531218 A JP 2011531218A JP 2011531218 A JP2011531218 A JP 2011531218A JP 2012505313 A5 JP2012505313 A5 JP 2012505313A5
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- substrate support
- support assembly
- return path
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10425408P | 2008-10-09 | 2008-10-09 | |
| US61/104,254 | 2008-10-09 | ||
| US11474708P | 2008-11-14 | 2008-11-14 | |
| US61/114,747 | 2008-11-14 | ||
| PCT/US2009/060230 WO2010042860A2 (en) | 2008-10-09 | 2009-10-09 | Rf return path for large plasma processing chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012505313A JP2012505313A (ja) | 2012-03-01 |
| JP2012505313A5 true JP2012505313A5 (https=) | 2014-05-22 |
| JP5683469B2 JP5683469B2 (ja) | 2015-03-11 |
Family
ID=42097738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011531218A Active JP5683469B2 (ja) | 2008-10-09 | 2009-10-09 | 大型プラズマ処理チャンバのrf復路 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100089319A1 (https=) |
| JP (1) | JP5683469B2 (https=) |
| KR (1) | KR101641130B1 (https=) |
| CN (1) | CN102177769B (https=) |
| TW (1) | TWI495402B (https=) |
| WO (1) | WO2010042860A2 (https=) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US8251009B2 (en) * | 2008-05-14 | 2012-08-28 | Applied Materials, Inc. | Shadow frame having alignment inserts |
| WO2010094002A2 (en) * | 2009-02-13 | 2010-08-19 | Applied Materials, Inc. | Rf bus and rf return bus for plasma chamber electrode |
| US9039864B2 (en) * | 2009-09-29 | 2015-05-26 | Applied Materials, Inc. | Off-center ground return for RF-powered showerhead |
| JP5835722B2 (ja) | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー,エルエルシー | 自動順位付け多方向直列型処理装置 |
| JP5591585B2 (ja) * | 2010-05-17 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20120267049A1 (en) * | 2011-04-25 | 2012-10-25 | Craig Lyle Stevens | Grounding assembly for vacuum processing apparatus |
| US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
| ITTO20110726A1 (it) * | 2011-08-04 | 2013-02-05 | Pramac Swiss S A | Perfezionamenti nelle camere di reazione per la deposizione di film sottili, particolarmente per la produzione di moduli fotovoltaici |
| SG11201402058TA (en) * | 2011-11-24 | 2014-09-26 | Lam Res Corp | Symmetric rf return path liner |
| US8847495B2 (en) * | 2011-11-29 | 2014-09-30 | Lam Research Corporation | Movable grounding arrangements in a plasma processing chamber and methods therefor |
| CN204375716U (zh) * | 2012-03-05 | 2015-06-03 | 应用材料公司 | 遮蔽框、基板支撑件以及等离子体增强型化学气相沉积设备 |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| US9340866B2 (en) * | 2012-03-30 | 2016-05-17 | Applied Materials, Inc. | Substrate support with radio frequency (RF) return path |
| CN103456591B (zh) * | 2012-05-31 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
| US9245720B2 (en) * | 2012-06-12 | 2016-01-26 | Lam Research Corporation | Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system |
| WO2014062323A1 (en) * | 2012-10-18 | 2014-04-24 | Applied Materials, Inc. | Shadow frame support |
| KR200483130Y1 (ko) * | 2012-10-20 | 2017-04-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 세그먼트화된 포커스 링 조립체 |
| KR102086549B1 (ko) * | 2013-05-06 | 2020-03-10 | 삼성디스플레이 주식회사 | 증착원 어셈블리 |
| KR102152811B1 (ko) | 2013-11-06 | 2020-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Dc 바이어스 변조에 의한 입자 발생 억제기 |
| KR102363241B1 (ko) | 2015-03-27 | 2022-02-16 | 삼성전자주식회사 | 플라즈마 강화 화학기상 증착 장비 및 그 동작 방법 |
| JP6670697B2 (ja) * | 2016-04-28 | 2020-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20170365449A1 (en) * | 2016-06-21 | 2017-12-21 | Applied Materials, Inc. | Rf return strap shielding cover |
| KR102242988B1 (ko) * | 2016-06-22 | 2021-04-20 | 가부시키가이샤 아루박 | 플라즈마 처리장치 |
| KR102399343B1 (ko) * | 2017-05-29 | 2022-05-19 | 삼성디스플레이 주식회사 | 화학기상 증착장치 |
| US20190043698A1 (en) * | 2017-08-03 | 2019-02-07 | Applied Materials, Inc. | Electrostatic shield for substrate support |
| CN108103473B (zh) * | 2017-12-18 | 2020-04-24 | 沈阳拓荆科技有限公司 | 用于半导体处理腔体的遮蔽装置及其使用方法 |
| US10923327B2 (en) * | 2018-08-01 | 2021-02-16 | Applied Materials, Inc. | Chamber liner |
| US10790466B2 (en) * | 2018-12-11 | 2020-09-29 | Feng-wen Yen | In-line system for mass production of organic optoelectronic device and manufacturing method using the same system |
| WO2020242817A1 (en) * | 2019-05-30 | 2020-12-03 | Applied Materials, Inc. | Atomic layer deposition reactor design for uniform flow distribution |
| JP7733638B2 (ja) * | 2019-08-02 | 2025-09-03 | アプライド マテリアルズ インコーポレイテッド | 高周波電力リターン経路 |
| CN112447475B (zh) * | 2019-09-05 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种具有柔性电介质薄片的等离子体处理装置 |
| JP7385023B2 (ja) * | 2019-09-26 | 2023-11-21 | アプライド マテリアルズ インコーポレイテッド | 基板処理用支持体ブラケット装置および方法 |
| US20230059495A1 (en) * | 2020-02-04 | 2023-02-23 | Lam Research Corporation | Optimization of Radiofrequency Signal Ground Return in Plasma Processing System |
| US11335543B2 (en) * | 2020-03-25 | 2022-05-17 | Applied Materials, Inc. | RF return path for reduction of parasitic plasma |
| US11443921B2 (en) * | 2020-06-11 | 2022-09-13 | Applied Materials, Inc. | Radio frequency ground system and method |
| KR102825317B1 (ko) * | 2020-11-19 | 2025-06-26 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 반도체 소자의 제조 방법 |
| KR102846682B1 (ko) * | 2021-04-01 | 2025-08-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마를 이용한 박막 형성을 위한 접지 리턴 |
| US12378669B2 (en) | 2022-01-28 | 2025-08-05 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
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| US549632A (en) * | 1895-11-12 | Machine | ||
| US3760342A (en) * | 1971-09-17 | 1973-09-18 | Essex International Inc | Terminal construction for electrical conductors |
| KR100276093B1 (ko) * | 1992-10-19 | 2000-12-15 | 히가시 데쓰로 | 플라스마 에칭방법 |
| US5380566A (en) * | 1993-06-21 | 1995-01-10 | Applied Materials, Inc. | Method of limiting sticking of body to susceptor in a deposition treatment |
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
| US5900062A (en) * | 1995-12-28 | 1999-05-04 | Applied Materials, Inc. | Lift pin for dechucking substrates |
| US6012600A (en) * | 1996-02-02 | 2000-01-11 | Applied Materials, Inc. | Pressure responsive clamp for a processing chamber |
| US6345589B1 (en) * | 1996-03-29 | 2002-02-12 | Applied Materials, Inc. | Method and apparatus for forming a borophosphosilicate film |
| US5764471A (en) * | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck |
| US6254746B1 (en) * | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
| US5900064A (en) * | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
| US5894400A (en) * | 1997-05-29 | 1999-04-13 | Wj Semiconductor Equipment Group, Inc. | Method and apparatus for clamping a substrate |
| US6057235A (en) * | 1997-09-15 | 2000-05-02 | Micron Technology, Inc. | Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition |
| US6024044A (en) * | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| CN1189595C (zh) * | 1998-04-13 | 2005-02-16 | 东京电子株式会社 | 阻抗减小的室 |
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| US6531030B1 (en) * | 2000-03-31 | 2003-03-11 | Lam Research Corp. | Inductively coupled plasma etching apparatus |
| US6779481B2 (en) * | 2000-04-27 | 2004-08-24 | Tokyo Electron Limited | Electrical coupling between chamber parts in electronic device processing equipment |
| US6857387B1 (en) * | 2000-05-03 | 2005-02-22 | Applied Materials, Inc. | Multiple frequency plasma chamber with grounding capacitor at cathode |
| US6364958B1 (en) * | 2000-05-24 | 2002-04-02 | Applied Materials, Inc. | Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges |
| JP2001338914A (ja) * | 2000-05-30 | 2001-12-07 | Tokyo Electron Ltd | ガス導入機構およびガス導入方法、ガスリーク検出方法、ならびに真空処理装置 |
| EP1174910A3 (en) * | 2000-07-20 | 2010-01-06 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| US7202690B2 (en) * | 2001-02-19 | 2007-04-10 | Nidec-Read Corporation | Substrate inspection device and substrate inspecting method |
| US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
| US6652713B2 (en) * | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| US20030236004A1 (en) * | 2002-06-24 | 2003-12-25 | Applied Materials, Inc. | Dechucking with N2/O2 plasma |
| US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| JP4831803B2 (ja) * | 2003-11-19 | 2011-12-07 | 三菱重工業株式会社 | 基板処理装置 |
| JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7375946B2 (en) * | 2004-08-16 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| US7534301B2 (en) * | 2004-09-21 | 2009-05-19 | Applied Materials, Inc. | RF grounding of cathode in process chamber |
| US20060172536A1 (en) * | 2005-02-03 | 2006-08-03 | Brown Karl M | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece |
| US20070012558A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Magnetron sputtering system for large-area substrates |
| US8381677B2 (en) * | 2006-12-20 | 2013-02-26 | Applied Materials, Inc. | Prevention of film deposition on PECVD process chamber wall |
| US7968469B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
| JP4887202B2 (ja) * | 2007-04-17 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電流の短絡回路 |
-
2009
- 2009-10-09 JP JP2011531218A patent/JP5683469B2/ja active Active
- 2009-10-09 TW TW098134399A patent/TWI495402B/zh not_active IP Right Cessation
- 2009-10-09 WO PCT/US2009/060230 patent/WO2010042860A2/en not_active Ceased
- 2009-10-09 CN CN200980140428.3A patent/CN102177769B/zh active Active
- 2009-10-09 US US12/576,991 patent/US20100089319A1/en not_active Abandoned
- 2009-10-09 KR KR1020117010552A patent/KR101641130B1/ko active Active
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