TWI495402B - 具有射頻迴流路徑之電漿處理腔室 - Google Patents
具有射頻迴流路徑之電漿處理腔室 Download PDFInfo
- Publication number
- TWI495402B TWI495402B TW098134399A TW98134399A TWI495402B TW I495402 B TWI495402 B TW I495402B TW 098134399 A TW098134399 A TW 098134399A TW 98134399 A TW98134399 A TW 98134399A TW I495402 B TWI495402 B TW I495402B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- return path
- substrate support
- frame
- support assembly
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 200
- 239000012212 insulator Substances 0.000 claims description 37
- 238000005086 pumping Methods 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 230000008093 supporting effect Effects 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 37
- 238000009826 distribution Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10425408P | 2008-10-09 | 2008-10-09 | |
| US11474708P | 2008-11-14 | 2008-11-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201031284A TW201031284A (en) | 2010-08-16 |
| TWI495402B true TWI495402B (zh) | 2015-08-01 |
Family
ID=42097738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098134399A TWI495402B (zh) | 2008-10-09 | 2009-10-09 | 具有射頻迴流路徑之電漿處理腔室 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100089319A1 (https=) |
| JP (1) | JP5683469B2 (https=) |
| KR (1) | KR101641130B1 (https=) |
| CN (1) | CN102177769B (https=) |
| TW (1) | TWI495402B (https=) |
| WO (1) | WO2010042860A2 (https=) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US8251009B2 (en) * | 2008-05-14 | 2012-08-28 | Applied Materials, Inc. | Shadow frame having alignment inserts |
| WO2010094002A2 (en) * | 2009-02-13 | 2010-08-19 | Applied Materials, Inc. | Rf bus and rf return bus for plasma chamber electrode |
| US9039864B2 (en) * | 2009-09-29 | 2015-05-26 | Applied Materials, Inc. | Off-center ground return for RF-powered showerhead |
| JP5835722B2 (ja) | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー，エルエルシー | 自動順位付け多方向直列型処理装置 |
| JP5591585B2 (ja) * | 2010-05-17 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20120267049A1 (en) * | 2011-04-25 | 2012-10-25 | Craig Lyle Stevens | Grounding assembly for vacuum processing apparatus |
| US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
| ITTO20110726A1 (it) * | 2011-08-04 | 2013-02-05 | Pramac Swiss S A | Perfezionamenti nelle camere di reazione per la deposizione di film sottili, particolarmente per la produzione di moduli fotovoltaici |
| SG11201402058TA (en) * | 2011-11-24 | 2014-09-26 | Lam Res Corp | Symmetric rf return path liner |
| US8847495B2 (en) * | 2011-11-29 | 2014-09-30 | Lam Research Corporation | Movable grounding arrangements in a plasma processing chamber and methods therefor |
| CN204375716U (zh) * | 2012-03-05 | 2015-06-03 | 应用材料公司 | 遮蔽框、基板支撑件以及等离子体增强型化学气相沉积设备 |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| US9340866B2 (en) * | 2012-03-30 | 2016-05-17 | Applied Materials, Inc. | Substrate support with radio frequency (RF) return path |
| CN103456591B (zh) * | 2012-05-31 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
| US9245720B2 (en) * | 2012-06-12 | 2016-01-26 | Lam Research Corporation | Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system |
| WO2014062323A1 (en) * | 2012-10-18 | 2014-04-24 | Applied Materials, Inc. | Shadow frame support |
| KR200483130Y1 (ko) * | 2012-10-20 | 2017-04-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 세그먼트화된 포커스 링 조립체 |
| KR102086549B1 (ko) * | 2013-05-06 | 2020-03-10 | 삼성디스플레이 주식회사 | 증착원 어셈블리 |
| KR102152811B1 (ko) | 2013-11-06 | 2020-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｄｃ 바이어스 변조에 의한 입자 발생 억제기 |
| KR102363241B1 (ko) | 2015-03-27 | 2022-02-16 | 삼성전자주식회사 | 플라즈마 강화 화학기상 증착 장비 및 그 동작 방법 |
| JP6670697B2 (ja) * | 2016-04-28 | 2020-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20170365449A1 (en) * | 2016-06-21 | 2017-12-21 | Applied Materials, Inc. | Rf return strap shielding cover |
| KR102242988B1 (ko) * | 2016-06-22 | 2021-04-20 | 가부시키가이샤 아루박 | 플라즈마 처리장치 |
| KR102399343B1 (ko) * | 2017-05-29 | 2022-05-19 | 삼성디스플레이 주식회사 | 화학기상 증착장치 |
| US20190043698A1 (en) * | 2017-08-03 | 2019-02-07 | Applied Materials, Inc. | Electrostatic shield for substrate support |
| CN108103473B (zh) * | 2017-12-18 | 2020-04-24 | 沈阳拓荆科技有限公司 | 用于半导体处理腔体的遮蔽装置及其使用方法 |
| US10923327B2 (en) * | 2018-08-01 | 2021-02-16 | Applied Materials, Inc. | Chamber liner |
| US10790466B2 (en) * | 2018-12-11 | 2020-09-29 | Feng-wen Yen | In-line system for mass production of organic optoelectronic device and manufacturing method using the same system |
| WO2020242817A1 (en) * | 2019-05-30 | 2020-12-03 | Applied Materials, Inc. | Atomic layer deposition reactor design for uniform flow distribution |
| JP7733638B2 (ja) * | 2019-08-02 | 2025-09-03 | アプライド マテリアルズ インコーポレイテッド | 高周波電力リターン経路 |
| CN112447475B (zh) * | 2019-09-05 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种具有柔性电介质薄片的等离子体处理装置 |
| JP7385023B2 (ja) * | 2019-09-26 | 2023-11-21 | アプライド マテリアルズ インコーポレイテッド | 基板処理用支持体ブラケット装置および方法 |
| US20230059495A1 (en) * | 2020-02-04 | 2023-02-23 | Lam Research Corporation | Optimization of Radiofrequency Signal Ground Return in Plasma Processing System |
| US11335543B2 (en) * | 2020-03-25 | 2022-05-17 | Applied Materials, Inc. | RF return path for reduction of parasitic plasma |
| US11443921B2 (en) * | 2020-06-11 | 2022-09-13 | Applied Materials, Inc. | Radio frequency ground system and method |
| KR102825317B1 (ko) * | 2020-11-19 | 2025-06-26 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 반도체 소자의 제조 방법 |
| KR102846682B1 (ko) * | 2021-04-01 | 2025-08-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마를 이용한 박막 형성을 위한 접지 리턴 |
| US12378669B2 (en) | 2022-01-28 | 2025-08-05 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
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2009
- 2009-10-09 JP JP2011531218A patent/JP5683469B2/ja active Active
- 2009-10-09 TW TW098134399A patent/TWI495402B/zh not_active IP Right Cessation
- 2009-10-09 WO PCT/US2009/060230 patent/WO2010042860A2/en not_active Ceased
- 2009-10-09 CN CN200980140428.3A patent/CN102177769B/zh active Active
- 2009-10-09 US US12/576,991 patent/US20100089319A1/en not_active Abandoned
- 2009-10-09 KR KR1020117010552A patent/KR101641130B1/ko active Active
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| US20060016559A1 (en) * | 2004-07-26 | 2006-01-26 | Hitachi, Ltd. | Plasma processing apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101641130B1 (ko) | 2016-07-20 |
| CN102177769B (zh) | 2016-02-03 |
| WO2010042860A2 (en) | 2010-04-15 |
| CN102177769A (zh) | 2011-09-07 |
| KR20110069854A (ko) | 2011-06-23 |
| JP2012505313A (ja) | 2012-03-01 |
| US20100089319A1 (en) | 2010-04-15 |
| WO2010042860A3 (en) | 2010-07-15 |
| JP5683469B2 (ja) | 2015-03-11 |
| TW201031284A (en) | 2010-08-16 |
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