KR101641130B1 - 대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로 - Google Patents

대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로 Download PDF

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Publication number
KR101641130B1
KR101641130B1 KR1020117010552A KR20117010552A KR101641130B1 KR 101641130 B1 KR101641130 B1 KR 101641130B1 KR 1020117010552 A KR1020117010552 A KR 1020117010552A KR 20117010552 A KR20117010552 A KR 20117010552A KR 101641130 B1 KR101641130 B1 KR 101641130B1
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South Korea
Prior art keywords
chamber
substrate support
support assembly
return path
frame
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Korean (ko)
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KR20110069854A (ko
Inventor
존 엠. 화이트
최수영
칼 에이. 소렌센
요제프 쿠델라
백종훈
지르지얀 제리 첸
스티븐 맥퍼슨
로빈 엘. 티너
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020117010552A 2008-10-09 2009-10-09 대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로 Active KR101641130B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10425408P 2008-10-09 2008-10-09
US61/104,254 2008-10-09
US11474708P 2008-11-14 2008-11-14
US61/114,747 2008-11-14

Publications (2)

Publication Number Publication Date
KR20110069854A KR20110069854A (ko) 2011-06-23
KR101641130B1 true KR101641130B1 (ko) 2016-07-20

Family

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KR1020117010552A Active KR101641130B1 (ko) 2008-10-09 2009-10-09 대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로

Country Status (6)

Country Link
US (1) US20100089319A1 (https=)
JP (1) JP5683469B2 (https=)
KR (1) KR101641130B1 (https=)
CN (1) CN102177769B (https=)
TW (1) TWI495402B (https=)
WO (1) WO2010042860A2 (https=)

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KR102086549B1 (ko) * 2013-05-06 2020-03-10 삼성디스플레이 주식회사 증착원 어셈블리
KR102152811B1 (ko) 2013-11-06 2020-09-07 어플라이드 머티어리얼스, 인코포레이티드 Ｄｃ 바이어스 변조에 의한 입자 발생 억제기
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JP6670697B2 (ja) * 2016-04-28 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置
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KR102242988B1 (ko) * 2016-06-22 2021-04-20 가부시키가이샤 아루박 플라즈마 처리장치
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Also Published As

Publication number Publication date
CN102177769B (zh) 2016-02-03
WO2010042860A2 (en) 2010-04-15
CN102177769A (zh) 2011-09-07
KR20110069854A (ko) 2011-06-23
JP2012505313A (ja) 2012-03-01
US20100089319A1 (en) 2010-04-15
WO2010042860A3 (en) 2010-07-15
JP5683469B2 (ja) 2015-03-11
TW201031284A (en) 2010-08-16
TWI495402B (zh) 2015-08-01

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