JP5683469B2 - 大型プラズマ処理チャンバのｒｆ復路 - Google Patents

大型プラズマ処理チャンバのｒｆ復路 Download PDF

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Publication number
JP5683469B2
JP5683469B2 JP2011531218A JP2011531218A JP5683469B2 JP 5683469 B2 JP5683469 B2 JP 5683469B2 JP 2011531218 A JP2011531218 A JP 2011531218A JP 2011531218 A JP2011531218 A JP 2011531218A JP 5683469 B2 JP5683469 B2 JP 5683469B2
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JP
Japan
Prior art keywords
chamber
substrate support
return path
support assembly
processing
Prior art date
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Active
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JP2011531218A
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English (en)
Japanese (ja)
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JP2012505313A5 (https=
JP2012505313A (ja
Inventor
ジョン エム． ホワイト，
ジョン エム． ホワイト，
ソー ヤング チェ，
ソー ヤング チェ，
カール エー． ソレンセン，
カール エー． ソレンセン，
ジョゼフ クデラ，
ジョゼフ クデラ，
ジョンフン ベック，
ジョンフン ベック，
ジャージャン ジェリー チェン，
ジャージャン ジェリー チェン，
スティーヴン マクファーソン，
スティーヴン マクファーソン，
ロビン エル． ティナー，
ロビン エル． ティナー，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2012505313A5 publication Critical patent/JP2012505313A5/ja
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Publication of JP5683469B2 publication Critical patent/JP5683469B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2011531218A 2008-10-09 2009-10-09 大型プラズマ処理チャンバのｒｆ復路 Active JP5683469B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10425408P 2008-10-09 2008-10-09
US61/104,254 2008-10-09
US11474708P 2008-11-14 2008-11-14
US61/114,747 2008-11-14
PCT/US2009/060230 WO2010042860A2 (en) 2008-10-09 2009-10-09 Rf return path for large plasma processing chamber

Publications (3)

Publication Number Publication Date
JP2012505313A JP2012505313A (ja) 2012-03-01
JP2012505313A5 JP2012505313A5 (https=) 2014-05-22
JP5683469B2 true JP5683469B2 (ja) 2015-03-11

Family

ID=42097738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011531218A Active JP5683469B2 (ja) 2008-10-09 2009-10-09 大型プラズマ処理チャンバのｒｆ復路

Country Status (6)

Country Link
US (1) US20100089319A1 (https=)
JP (1) JP5683469B2 (https=)
KR (1) KR101641130B1 (https=)
CN (1) CN102177769B (https=)
TW (1) TWI495402B (https=)
WO (1) WO2010042860A2 (https=)

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Also Published As

Publication number Publication date
KR101641130B1 (ko) 2016-07-20
CN102177769B (zh) 2016-02-03
WO2010042860A2 (en) 2010-04-15
CN102177769A (zh) 2011-09-07
KR20110069854A (ko) 2011-06-23
JP2012505313A (ja) 2012-03-01
US20100089319A1 (en) 2010-04-15
WO2010042860A3 (en) 2010-07-15
TW201031284A (en) 2010-08-16
TWI495402B (zh) 2015-08-01

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