TW201145346A - Cover fixing member and inductively coupled plasma processing apparatus - Google Patents

Abstract

A cover fixture and an apparatus for processing the inductive coupling of plasma are provided to have the function of fixing a cover and the function of supplying gas using a supporting part, which supports a cover, and a base which is connected to the supporting unit. A dielectric cover fixture(18) comprises a supporting part(18a) respectively, which supports a first part cover(12A) and a second part cover(12B), and a base(18b). The top of the base includes a convex part(18b1) projected in a cylindrical shape. A screw thread(18b2) is formed around the convex part. A gas inlet way(101) of a square shape, which is connected to a gas inlet way(21b) of a stick shape, is formed inside the convex part. The gas inlet ways are connected to the inside of a process chamber. A vent(101a) is formed passing through the low wall of the base.

Description

201145346 VI. Description of the Invention: [Technical Field] The present invention relates to a cover fixture for fixing a cover plate in an inductively coupled plasma processing apparatus (covering a window slide member constituting a ceiling portion of a processing chamber) And an inductively coupled plasma processing apparatus having the cover fixture. [Prior Art] In the process of FPD (Flat Panel Display), various plasma treatments such as plasma etching, plasma ashing, and plasma film formation are performed on the glass substrate for FPD. An apparatus for performing such plasma treatment is known as an inductively coupled plasma (ICP) processing apparatus which can produce high-density plasma. The inductively coupled plasma processing apparatus includes a processing chamber that is kept airtight and that performs plasma treatment on a substrate of the object to be processed, and a high frequency antenna that is disposed outside the processing chamber. The processing chamber has a window member made of a material such as a dielectric material constituting a ceiling portion thereof, and the high-frequency antenna is disposed above the window member. The inductively coupled plasma processing device generates an induced electric field in the processing chamber via a window member by applying high frequency power to the high frequency antenna, and converts the processing gas introduced into the processing chamber into plasma by using the induced electric field, and uses the electric power. The slurry is subjected to a predetermined plasma treatment of the substrate. When the window member of the inductively coupled plasma processing apparatus is exposed to the processing chamber, the window member is damaged by the plasma. Since the window member cannot be easily replaced, it is not easily replaced or cleaned even if it is damaged. In the case of Patent Document 1, the underside of the window member is covered with a cover plate that can be easily detached. Thereby, the window member can be protected and can be

S 4 201145346 Damaged cover is easily replaced or clean. In the conventional document, the conventional cover is fixed to the bud member of the window member by a plurality of screws as described in Patent Document 1. In more detail, in the Xizhi branch, a plurality of through holes of the insertion hole are formed in the vicinity of the periphery (4) of the cover plate, and the screw holes are respectively inserted from the T surface side of the cover plate, and the shaft portion is bolted into the shaft portion. Supporting the structure of the window member 仵τ, to fix #, the following _ ~ 'This method of the cover plate 111, the method of exposure to the plasma treatment, due to the continuous rise of the cover under the cover two: temperature will Rise. The temperature below the cover plate results in a non-uniform temperature distribution underneath, which encloses the sheet;; = slight deformation such as stretching or warping. At this time, due to the difference between (4) = ==, (4)). Therefore, the ######################################################################################### , from the diameter of the 3 full structure, the plate through the hole directly relative displacement, free of the cover

S 201145346 stress. However, even if the stress applied to the cover plate is likely to concentrate in the vicinity of the through hole when the cover is deformed, it is easy to cause cracking due to the through hole as a starting point, thereby causing damage to the cover. Further, in the conventional method of fixing the cover, a plurality of convex portions are formed by a plurality of screw heads on the ceiling of the processing chamber. By-products which occur during the plasma treatment tend to adhere to such projections. Therefore, in the plasma treatment, once the by-product attached to the screw head is dropped from the screw head to generate particles (floating particles), the particles may cause a bad name. In addition, particles may be generated from the head of the screw due to the plasma, and the particles cause poor etching. Further, in the conventional method of fixing the cover, since a plurality of screws are used to fix the cover, there is a problem that the cover is not handled properly. Further, in recent years, in response to the increase in the size of the FPD, the processing chamber of the inductively coupled plasma processing apparatus has also become large. Inductively coupled plasma processing apparatus having a large processing chamber, in which the window member and the cover system are each composed of a plurality of divided states. In this case, more screws are used for fixing the cover, so that the loading and unloading workability of the cover is further reduced, and the problem of generating particles is also increased. In addition, the conventional inductively coupled plasma processing apparatus adopts a method in which a support member such as a beam supporting the window member is formed in advance to form a gas introduction flow path, and a gas is introduced into the treatment chamber through a plurality of small gas holes provided in the cover plate. . Therefore, it is necessary to machine a portion of the beam into which the gas can be diffused, and a large number of fine gas holes must be formed in the cover plate, which is a considerable burden of processing effort and cost. In addition, since the gas introduction flow path cannot be disposed in the portion where the support member is not provided, the gas is introduced

S 6 201145346 The location of the processing chamber is limited to the uniform distribution of the I-position in the room, and there is room for improvement from the viewpoint of processing. The present invention relates to a cover fixing yoke in view of the foregoing problems, and the purpose of the invention is to provide a covering and a sensation (4) processing device, which can suppress the cover under the two self-clamping members. The damage of the board and the generation of particles, and the cover can be easily removed, the design freedom of gas introduction can be improved. The inductively coupled plasma processing apparatus of the present invention is used in an inductively coupled plasma processing apparatus. The inductive coupling: the plasma processing 28th has a processing chamber, which has a window constituting a ceiling portion for money processing; a gas supply device, a system for the secret part; a high frequency antenna, which is disposed in the The window member is configured to form an induced electric field in the supply gas; the branch member is cut to cover the window member. The member of the present invention; and a cover for fixing the cover. The anti-fixation device is used in the present invention. The cover fixture of the present invention is provided with a support portion and a base portion connected to the support portion, and is supported by the gas supply device. Part of the gas flow path of 15 ° and gas. + Qianli chamber supply gas Further, the cover mosquito set of the present invention has a gas hole for guiding a gas chamber in the other portion of the gas flow path. In addition, the cover mosquito of the present invention can also be used in the read gas introduction flow path.

S 201145346 Sigh the plasma interrupting member to prevent the * upstream side of the body flow path. In this case, the entry into the reading gas is: the body; and the stagnation age #, ^ electric water shielding component can also get the gas through the shellfish mouth, formed in the body and /, will not produce a linear opening , configuration: the conduction degree is less than the conduction degree of the through opening. This I make = gas hole or: the plasma interrupting member is detachably arranged:: make-in & In addition, the electric device cover: q body guides are replaced independently. The fixing of 1m can also be divided into two: #The cover fixture of the invention can also be used as the aerobic diffusion space in the gas, the road opening > In addition, the cover plate of the present invention is fixed, and the following is a method for fixing the sputum of the present invention, and the following is the case where the base of the bristles is directly or indirectly fixed to the device === There is a mechanical margin to receive the cover fixture that is invented by the fresh invention. The support member can also have the body of the tooth 1 = inductive light and electric treatment to dissipate the body volume; 2^件. The 'the base ^' of the cover fixture of the present invention, the branch is at least grounded between the member and the window member to be a part of the cover directly or in addition, the present invention (4) 4 ==; ^

S 201145346 supports the upper surface of the supported portion and the distance from the upper portion to become smaller as it leaves the base. The inductively coupled plasma processing apparatus of the present invention is provided with the above-described cover fixture in one to a plurality of positions. The inductively coupled plasma processing apparatus of the present invention may also have a notch portion for mounting the cover fixture. The inductively coupled plasma processing apparatus of the present invention may be installed in place of at least one of the cover fixtures in such a manner that the cover fixture can be replaced with the cover fixture; The replacement cover fixture may be provided with a support portion for supporting the cover plate and a base portion connected to the support portion; and the base portion has a blocking structure for blocking airflow between the gas introduction flow path and the processing chamber portion. . The cover fixture of the present invention is provided with a support portion for supporting the cover and a base portion connected to the support portion, and a portion of the gas flow path for supplying gas from the gas supply device to the processing chamber is provided at the base portion. That is, the cover fixture of the present invention has a function of fixing a cover and a function of supplying gas into the processing chamber via the cover fixing member. In this case, the inductively coupled plasma processing apparatus of the present invention can fix the cover plate without a plurality of through holes of the cover shaft into the screw shaft portion, and can reduce the number of pieces of f 7 and suppress the damage of the cover plate. With the production of particles, it is easy to handle the cover. In addition, if the money is placed on the support member, the gas supply can be performed even if a plurality of gas holes are formed from the two cover plates, and the parts of the support member can be increased, and the part of the gas guide processing chamber can be improved (4). The degree of freedom of the mouth is easy to handle the indoor s 201145346 to form a uniform inductively coupled plasma, which is the effect. [Embodiment] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings (first embodiment). The first embodiment 1 is a suspension member and a high-frequency antenna < dielectric in the sense _ 1 The bottom surface of the cover device First, a cross-sectional view of the coupled plasma processing device will be described with reference to Figs. 1 to 4 for the configuration of the induction material plasma processing apparatus of the present invention. 2 is a perspective view showing a dielectric wall of a "window member" and a "support member". FIG. 3 is a perspective view showing the dielectric wall of FIG. 1. FIG. 4 is a view showing a "cover plate" in FIG. As a dielectric material for "covering mosquitoes". Figure 1 shows the inductively coupled plasma treatment system

The glass substrate (referred to as "substrate" by T) s. For example, FPD can be, for example, a liquid crystal display (LC〇) electric second treatment. (Electro Luminescence; EL) shows crying, thunder θ electroluminescence (PDP) and the like. The display panel inductively coupled plasma processing apparatus 1 includes a main body crying antenna chamber 4 and a processing chamber 5, and is disposed in the space of the main body container 2' main body container 2 as two upper and lower spaces. The dielectric wall 6 is composed of. The antenna room 4 is divided into a body volume = the inner dielectric wall 6 is connected to the upper chamber. The processing chamber 5 is connected to the lower space of the dielectric wall 6 in the body 2 . Thus, the dielectric wall 6 structure \ 201145346 also constitutes the ceiling portion of the processing chamber 5. The body is crying at the place where the substrate is processed. There are four side containers at the bottom of the upper wall. The body container 2 can also be a cylindrical shape material. When the body is capacity. In the case where the material of the conductive material such as the alloy or the alloy is made of aluminum, it is attached to the body container (4) to avoid the occurrence of wood loss from the body container. In addition, the body container 2 has a grounding makeup energy. The 丨a wall 6 has an upper surface of a substantially square shape * a bottom surface = a side surface and exhibits a substantially rectangular parallelepiped shape. The dielectric wall 6 is formed of eight materials. The material of the dielectric wall 6 is, for example, two, ΐ Γ Γ: For example, the dielectric wall 6 is divided into 3: two: that is, the dielectric wall 6 has J: the wall 6 Β, the third Part of the wall 6 a brother 2 # 介雷 temporarily 6 m 苐 part of the wall 6D. In addition, the electric bunker wall 6 may not be divided into four parts. The inductive surface coin processing device can be advanced - the step 7 = 16 is used as a supporting member for supporting the dielectric wall 6. ^礼所! The side wall of the device 2 is located. The support beam 16 is shaped like FIG. The four partial walls of the dielectric wall 6 are 6A, and the other two? Supported by the support frame 7 and the support (four). Further, the support *7 and the support beam 16 may also be formed in a body. The county == treatment device 1 has a cylindrical shape and has a body with the body; ==: 8C, 8D, 8E'.卩 2a is connected to the upper end. 201145346 The central part (cross section) above the slinger 16 is connected to the lower part of the suspension A. In the present embodiment, the suspension member 8E and the support beam 16 are both support members, and the suspension member constitutes a "first structure". The support beam 16 constitutes a "second member". Further, the center portion of the support beam and the middle portion of the four front end portions of the cross are connected to the lower end portion of the suspension member 8B m 8e. With this support, the raft 16 is suspended from the upper wall portion of the main body 2 by the five suspension members 8A to 8E, and is disposed at the level (four) at the upper and lower sides of the main body container 2. The gas introduction portion 21a constituting one of the "first gas introduction flow paths" is formed in the gas portion of the suspension member. The material is the material of the ^ liang beam 16, in order to make the metal material of the secret and other materials. The inner and outer surfaces are subjected to an acid-resistant surface to prevent the introduction of a weeping path from the surface; and the inside of the support beam 16 is formed with a gas introduction flow path 2lb constituting a part of the "first gas It". Inductively coupled plasma processing wiring (hereinafter referred to as "antenna") 13, = two, has a high frequency portion, that is, disposed in the processing chamber 5 and placed inside the antenna chamber 4. ... as shown in Figure 3, the second 2 is a large ^^ square spiral mm. Wei 13_ The shape of the battle shape is outside the body container 2 neighbor # electric shell soil 6 above. Day (4) - 2; The other end of the antenna 13 is connected to the body container 2: wall frequency 2:. 201145346 Body container 2 and grounded. The inductively coupled electric feeding is made of U1 under the electric wall 6, and the covering medium cover 12 is provided with a dielectric cover u. Jiedi r and 4 sides. The upper part of the dielectric has two big two and 】 Shi Chengying?" Cover heart =:::3⁄4 Give you a 丨 division into 4 parts; 八介I quality cover 12 series and dielectric wall 6 the same part The cover plate 12C and the 苐2 partial dam plate 12B and the third cover plates 12A, 12B, and 12C cover the cover UD. The first to fourth portions to the fourth portion _6A 2D cover the dielectric wall 6 respectively. The i-th cover 12 can also be under the 6C, 6D. In addition, the upper part of the dielectric. The knife is 'four parts, or can be divided into five as shown in FIG. In the present embodiment, the cover plate fixing 1 is provided with a fixed dielectric 18, and the fixed device 18 is inductively coupled to the plasma. In addition to the cover fixture 19a, the cover plate fixture 18 is provided with a dielectric system made of a dielectric cover: 9B, 19C, 19D. The fixing of the peripheral portions of the dielectric cover plates 12 mh_^L8, 19a, 19b, i9c, i9d_19A, 13b, and l9c of the dish plate 12 is not limited to the four portions of the substrate S. In the case of the plasma processing, high frequency power (for example, high frequency power of 13·56 )) is applied to the 201145346 antenna 13 from the high frequency power supply 丨5. Thereby, an inductive electric field can be formed in the processing chamber 5 by means of the antenna 13. This induced electric field converts the processing gas described later into a plasma. A gas supply device 20 is further provided outside the main body container 2. The gas supply device 20 supplies the processing gas used for the plasma treatment to the processing chamber 5 via the gas flow path. The gas supply device 20 is connected to the gas introduction flow path 21a formed in the hollow portion of the suspension member 8 via a gas supply pipe 21 as a "gas pipe". This gas introduction flow path 21a is connected to the gas introduction flow path 21b formed by the support beam 16. The "gas flow path" of the inductively coupled plasma processing apparatus 1 of the present embodiment is a gas supply pipe 21 as a gas pipe, a gas introduction flow path 21a as a "first gas introduction flow path", and a gas introduction flow path 21b. And a gas introduction flow path 101 (described later) as a "second gas introduction flow path". When the plasma processing is performed, the processing gas system passes through the gas supply pipe 21, the gas introduction flow path 21a formed in the suspension 8A, the gas introduction flow path 21b formed in the support beam 16, and the dielectric cover. The gas introduction flow path 101 of the fixture 18 is supplied into the processing chamber 5. For the treatment of the gas, for example, SF6 gas, Cl2 gas or the like is used. Further, a valve or a flow rate control device (not shown) may be provided in the gas flow path, but the description thereof is omitted here. The inductively coupled plasma processing apparatus 1 further includes a susceptor 22, an insulator frame 24, a support post 25, a bellows 26, and a gate valve 27. The support post 25 is connected to a lifting device (not shown) provided under the main body container 2', and protrudes into the processing chamber 5 through an opening portion formed at the bottom of the main body container 2. Further, the pillar 25 has a hollow portion. The insulator frame 24 is provided on the pillars 25. This insulator frame 24 is in the form of a box having an upper opening. An opening is formed in the hollow portion of the support frame 25 at the bottom of the insulator frame 24. The bellows 26 surrounds the post 25 and is hermetically connected to the insulator frame 24 and the bottom inner wall of the body container 2. Thereby, the airtightness of the processing chamber 5 is maintained. The crystal holder 22 is housed in the insulator frame 24. The crystal holder 22 has a mounting surface 22A on which the substrate S is placed. The mounting surface 22A is opposed to the dielectric cover 12. The material of the crystal holder 22 is made of a conductive material such as aluminum. When the material of the crystal holder 22 is used, the surface of the crystal holder 22 is treated with an alumite treatment to avoid generation of contaminants from the surface. An integrator 28 and a high frequency power supply 29 are further disposed outside the main body container 2. The crystal holder 22 is connected to the integrator 28 via an energizing rod inserted through the opening of the insulator frame 24 and the hollow portion of the pillar 25, and is further connected to the high-frequency power source 29 via the integrator 28. When the substrate S is subjected to plasma treatment, the crystal holder 22 is supplied with surface frequency power for bias (for example, two-frequency power of 3·2 自) from the high-frequency power source 29. This phase-frequency power is used to effectively pull ions in the plasma into the substrate S placed on the wafer holder 22. The gate valve 27 is disposed on the side wall of the body container 25. The gate valve 27 has an opening and closing function to maintain the airtightness of the processing chamber 5 in the closed state, and to transfer the substrate S between the processing chamber 5 and the outside in the open state. A vacuum device 30 is further disposed outside the body container 2.

S 201145346 The vacuum device 3G is connected to the processing chamber 5 via a connection body. When the substrate S is placed in the exhaust pipe at the bottom of the rod, and the plasma is discharged from the processing chamber 5, the vacuum is filled with a vacuum atmosphere. i虱, the inside of the processing chamber 5 is maintained next. Referring to FIG. 4 to [si 7 j>\ cover fixture, the dielectric and dielectric cover fixture 18 of the present embodiment are described in detail, and the palpitations are displayed. The dielectric cover 12 5 is shown as -19B, 19 <=; 19D in the line 5 to 5 of Fig. 4. As shown above, a cross-sectional view of a cross section of the dielectric (four) plate 3 is shown. Cover please ~ (five). The phase matching plate 12A of the entire dielectric cover 12 is provided with two partial cover plates 12B, and is disposed in the upper left area of the eight= domain, the upper right area of the first domain, and the first part; 12 All of the arrangement area cover 12 is disposed in the entire area. The dish &2C# is placed on the dielectric plate in the lower right area of the fourth part of the dielectric domain. The central portion of the dielectric cover 12 in the entire arrangement area of the plurality of plates 12 is formed in the i-th to fourth portions 12, UB, and H, and is formed into a solid-shaped opening when the cover plates are joined together. The arcuate notch portion 12 122, 123, ..."" electric raft fixing fixtures 18, 19A, 19B, 19C, the post has a support portion and a base portion. The support portion is placed over a portion of the dielectric cover plate. The lower side of the support portion is a portion of the support portion. The dielectric cover fixture is viewed from the side of the processing chamber 5, and is formed in the center portion of the dielectric cover 12 by a notch portion 121, ^ 22. The circular opening portion formed by 201145346 123 and 124 is slightly rounded. Further, the dielectric cover fixture 18 is disposed to cover the circular opening of the dielectric cover 12, and is further disposed. The electric sheet cover fixture 18 is formed with a plurality of gas holes 10a. In Fig. 4, six gas holes 101a are shown, but the number of the gas holes l〇la may be arbitrary. Further, from the side of the processing chamber 5 The shape of the dielectric cover fixture 18 to be viewed is not limited to a circular shape, and may be a polygonal shape such as a square shape, as viewed from the processing chamber 5 side. The dielectric cover fixtures 19A to 19D are all rectangular in shape. Further, the "cover fixture" of the present invention is a dielectric cover fixture 18, and the dielectric cover fixtures 19A to 19D are omitted. Detailed description. Next, the configuration and function of the dielectric cover fixture 18 will be described in detail. The dielectric cover fixture 18 is provided with a support portion 18a that supports one of the first to fourth partial cover plates 12A to 12D, and a base portion 18b that is connected to the support portion 18a. In the dielectric cover fixture 18 of the present embodiment, the annular support portion 18a is integrally formed so as to surround the periphery of the base portion 18b. On the other hand, as shown in Fig. 5, the first partial cover 12A has a supported portion 12A1. The supported portion 12A1 has a lower surface 12A1a and a side end 12Alb connected to the lower surface 12A1a. The side end 12Alb is also the end edge of the notch portion 121. In the example shown in FIG. 5, the upper surface of the supported portion 12A1 abuts against the lower surface of the support beam 16, and the upper surface of the supported portion 12A1 abuts against at least one of the support beam 16 and the first partial wall 6A. can. Similarly, the second partial cover 12B is supported

S 17 201145346 Part 12B1. The supported portion 12B1 has a lower surface 12ma and a side end i2Blb connected to the lower portion 12Bla. In the example shown in FIG. 5, the upper surface of the supported portion 12B1 abuts against both the support beam 16 and the second partial wall, and the upper surface of the supported portion 12B1 abuts on the support target 16 and the second portion. At least one of the walls 6B may be underneath. The third and fourth partial cover plates 12C and 12D are also divided into the same supported portions as the upper support portions 12A and 12B1. The support portion 18a of the dielectric cover fixture 18 has an upper surface 18a1 and a lower surface 18a2 supporting the lower portions 12A1, 12B1a, etc. of the supported portions 12Α1, 12Β1 and the like. The lower surface 18a2 of the support portion 18a is a tapered surface which becomes smaller as the distance between the support portion 丨 and the upper surface 18a1 is separated from the base portion 18b. The support portion 18a may also support the branch portion of the dielectric cover 12, 12B1, and the like indirectly, for example, by the third member. The shape of the base portion 18b viewed from the side of the processing chamber 5 is slightly smaller than the shape of the circular opening portion of the dielectric cover 12. The upper portion of the base portion 18b of the dielectric cover 18 has a convex portion 18M projecting in a cylindrical shape, and a thread 18b2 is formed around the convex portion 18b1. The convex portion 18b1 of the base portion 18b is inserted into the circular opening portion of the dielectric cover sheet π. A gas introduction flow path ??1 connected to the "second gas introduction flow path" of the gas introduction flow path 21b is formed inside the convex portion 18b1 of the base portion 18b. The gas introduction flow path 101 constitutes a part of the gas flow path and is a portion that communicates the gas introduction flow path 21b with the inside of the processing chamber 5. The base portion 18b is directly or indirectly fixed to the support beam 16 adjacent to the end of the gas introduction flow path 21b. Further, the base portion 18b is provided with a base wall of the 201145346 ioia method β and the base portion 18b, and constitutes a gas introduction path 1U1 of -5 (4) and serves as a terminal of the gas flow path facing the processing chamber member cover fixture 18 The base portion is fixed in a manner that does not change as the erecting relationship of the support beam 16 is fixed. The ancient bud beam 16 has a recessed portion 6a, and the inner peripheral shape of the recessed portion i6a is 1 11 sen. In addition, the dielectric cover fixture 18 is such that the thread is screwed in; the groove 16b is screwed, and the recess 16a of the convex portion 18b1 of the base portion 18b is fixed to the support beam. Thus, the dielectric cover Fixed and τ and so on JL, he is abruptly π - a 18 in the convex part Mbl can be fixed to the few parts number Jin, 廿ΰτ, rr into i and the tooth strip 16 can be reduced by using the screw-piece solid means Son: The particle is produced from the head of the screw that is exposed to the electric power. In addition, in Fig. 5, the thread i8b2 of the base portion 18b is directly formed by 疋/, 18, but the dielectric cover is fixed and the screw groove of α = 16 means that the parts are mosquitoes, and thus; A third member is interposed between the screws and the like to be fixed. The base portion P18b and the support beam 16 are shown in an enlarged view in Fig. 6, and the gas introduction flow path 1?1 provided in the medium portion 18b is a base i01 of the fixed portion 18. The electric self-breaking member is attached to the disk-shaped body blocking member Beton opening 2〇ib. The plasma interrupting member 2〇1 2〇h has a complex number. The plasma blocking structure #201 is used for loading and unloading the insulating material flow path 10. For example, the plasma blocking member can be inserted into the gas phase A of the base 201145346 18b outside the gas introduction. The inner diameters are processed to be substantially equal, and the ribs may be provided with screw threads and groove grooves in the inner circumference of the gas introduction flow path 1〇1 + mountain of the peripheral spot base portion 18b of the undulation blocking member 201. Installation. Further, the + # - 八3 plasma interrupting member 201 can be separated from the bottom wall of the base portion 18b in which the gas hole 101a is formed by interposing, for example, the same. The gas diffusion space 103 is disposed between the emperor and the bottom wall of the base portion 18b. The gas diffusion is made into the gas hole 1〇1& the gas is sprayed out in the future, and the venting member is not connected to the opening and the base is introduced into the flow path, so that the gas cannot be directly seen from the processing chamber 5. Installed. In the manner of 1 and the positional relationship that is not linearly overlapped, "the gas hole 1 〇 1 & and the through opening 2 〇 lb are arranged in a straight line" to prevent the plasma in the processing chamber 5 from passing through the gas hole 1 It causes the beam 16 to be damaged or corroded by the electrolysis. The plasma generated in the processing chamber 5 is indicated by an arrow, indicating that the plasma is introduced into the gas from the gas hole 1〇la. In the case of the flow path ι〇ι, it is blocked by the plasma shutoff member 201, and the gas introduction flow path 21b (see Fig. 5) invading the upstream side of the gas flow path is prevented. " Further, in the present embodiment, the through opening 2 is set such that the conduction degree of the gas hole ι〇ι& of the base portion 18b is smaller than the conduction degree of the through opening 201b of the plasma interrupting member 2〇1. 1b and the number of gas holes 101a and the opening area. If the gas hole of the base 18b is made

The conduction degree of S 20 201145346 101a is smaller than the conduction degree of the through opening 201b of the plasma interrupting member 201, and it is possible to promote the discharge of uniform gas from the gas hole 10a to the processing chamber 5. The plasma interrupting member 201 and the dielectric cover fixture 18 can be individually and independently replaced. Further, in Fig. 5 and Fig. 6, a state in which one plasma shutoff member 201 is mounted is shown, but a plurality of plasma shutoff members 201 may be disposed. In Fig. 7, the state of the two plasma shutoff members of the plasma shutoff member 201A and the plasma shutoff member 201B are disposed above and below. Even in this case, it is preferable to separate, for example, a separator (not shown) between the plasma shutoff member 201A and the plasma shutoff member 201B and between the plasma shutoff member 201B and the bottom wall of the base portion 18b. And a gas diffusion space 103 is formed. Further, it is preferable that the through openings 201b of the plasma shutoff members 201A and 201B are not linearly overlapped with the gas holes 101a so that the gas introduction passages 21b cannot be directly seen from the processing chamber 5. In Fig. 7, the plasma generated in the processing chamber 5 is shown by an arrow, and it is shown that when the plasma intrudes into the gas introduction flow path 101 from the gas hole 101a, it is subjected to the plasma interrupting members 201A, 201B. The gas is prevented from entering the upstream side of the gas flow path and introduced into the flow path 21b. By arranging the plurality of plasma shutoff members, it is possible to more reliably prevent the gas introduction flow path 21b from entering the upstream side of the gas flow path (see Fig. 5). [Second Embodiment] Next, an inductively coupled plasma processing apparatus according to a second embodiment in which the position of the dielectric cover fixture is changed will be described. In the picture

S 21 201145346, Figure 4, etc.! In an embodiment, the dielectric cover is fixed to the support beam 16 at the center of the dielectric wall 6. ^, the fixture 18 can be any below the dielectric wall 6: set; = dielectric cover 12. Fig. 8 is a cross-sectional view showing the inductively coupled electric discharge process of the second embodiment. Further, Fig. 9 is a bottom view showing the dielectric cover 12 and the dielectric cover fixture 18 of the inductively coupled plasma processing apparatus 1a. In the following description, the inductively coupled plasma processing apparatus 1a' of the second embodiment will be described with respect to the difference between the inductively coupled plasma processing apparatus 1 (FIG. 1) of the first embodiment. The same components are denoted by the same reference numerals, and description thereof will be omitted. In the inductively coupled plasma processing apparatus 1a of the second embodiment, not only the central portion of the support beam 16 having a cross shape but also the dielectric beam is disposed in the middle of the support beam 16 extending from the central portion toward the square Cover fixture 18. Thus, the inductively coupled plasma processing apparatus is provided with a total of five dielectric cover fixtures 18. As shown in Fig. 8, in the inductively coupled plasma treatment of the first modification, the suspension member 8A connected to the center portion of the support beam 16 is provided with a gas introduction flow path 'in addition to the upper center of the support beam 16. A gas introduction flow path is also provided inside the suspension members 8B, 8C, 8D, and 8E which are connected to the four portions of the four front end portions of the cross. The gas supply pipe 21 is divided into five branches in the middle (only three are shown in FIG. 8), and the gas is introduced into each of the suspension members 8A, 8B, 8C, 8D, and 8E. A 22 201145346 η! No. 145 is provided in the gas supply. In the middle of the pipe, the valve for controlling the flow rate of the rolling body is used. k is in the central county of the piece 8A (four) with this gas introduction flow path + g and other machine road 2la, into the weeping 跋 Γ 支撑 support #16 inside the gas into the grip 2ib, and then the gas introduction flow is called ^ The gas introduction flow path 1 of the body guide fixture 18 = the inside of the electric energy cover 8C, 8D, 8E is respectively provided with a gas from the = 8B, and the body introduction flow path (only the suspension member 8B: 8c is shown in Fig. 8: := The air flow path is 1仏, 丨仏, otherwise the gas introduction is omitted. The body introduction flow path inside the support beam 16 only shows the gas introduction flow path 141b and the milk-inflow path (Fig. 8 is connected to each The dielectric cover panel (others are omitted), the inlet flow path is 1〇1. With this configuration, not only the gas formed by the gas can be introduced even at the four parts around it, but also the center of the electric wall 6 , the dielectric cover 12 is fixed to the dielectric cover fixture fixture 18, the process gas guide can be placed through the dielectric cover plate to the 5 parts of the dielectric cover to 5 Therefore, the gas supply can be performed from the inside of the compartment 5. Further, /, 18 independently treats the treatments 8A to 8E and the support beam 16 in the present embodiment. The pendant constitutes a "first member", and the support member is suspended. The suspension members 8A to 8E are inductively private: 16 is a "second member". The structure of the quality cover 18 is *5 The case of each of the dielectric-coupled plasma processing apparatus 1 is the same as that of the reporting method and the induction of FIG. 1. In addition, in the present embodiment, the configuration of the second electric power cover 12 is 23 201145346 The dielectric cover is fixed and μ When the phase portion is provided with a plurality of singular sigma σ as shown in Fig. 9, it is a circular opening portion. Specifically, as in (10), corresponding to the cross-shaped to work 4 partial cover 12A , 12B, 12C, the dielectric 124 installed in the central portion of the quality cover fixtures 18, 16. In addition, this point corresponds to the t-portion Μ, 122, 123, and the support of the four-way extension. In the first portion of the cover plate, the first dielectric cover 18 is provided with a notch portion 12 in the first partial cover plate. The notch portions I2?, us are provided with notch portions IN, no in the * partial cover plate 12C, and the notch portions 131, 132 are provided in the third plate 12D. The notch portions 125 to 13 are made When the notched portions of the partial cover plates are joined together, they become circular (having a semicircular shape). > % As such, the inductively coupled plasma treatment of the present embodiment is not only at the position of the suspension member 8A, even when suspended. The components 8b to 8h & are also provided with a dielectric cover fixture 18, whereby the dielectric cover 12 can be more accurately positioned. Moreover, since not only the suspension member but also the suspension member 8B Since the gas is introduced into the processing chamber 5 via the dielectric cover 18 at the position of the portion 8E, it is possible to stably generate a more uniform plasma by the uniform diffusion of the processing chamber. In addition, the five dielectric cover fixtures 18 of the internal gas can be independently suppressed by the valve 145, so that the flow rate can be adjusted according to the plasma generation condition in the processing chamber 5. The gas supplied by the quality cover fixture 18 is 2424. In addition, in Fig. 8, although the supply pipe 21 is branched from the single gas supply I, the suspension member 8a, 8B, 8C, 8D, 8E X gas is branched. Introducing the flow path to guide the gas, but it is also possible to connect the suspension elements 8A and m independently from the plurality of gas 20; Further, in the present embodiment, it is shown that not only the position where the suspension member is recognized, but also the suspension member connected to the middle portion of the four front end portions of the central portion of the cross-shaped support beam 16 (=) The positions of the 8D and 8E are also arranged in the form of the dielectric cover fixture 18, but even if the shape of the support beam, the position of the suspension member, and the number of the suspensions are different, the dielectric cover can be fixed corresponding to the position of the suspension member. [Embodiment 3] Next, with reference to Fig. 10 and Fig. 11, a description will be given of a sensory shaft plasma processing apparatus according to a third embodiment of the present invention. The difference between the plasma treatment vibration and the sensory plasma treatment and the center of the second embodiment will be described with the same configuration. The support fixture 18 can also be mounted on the bottom surface of the support panel 16 without the support beam 16, the second electrical assembly device. In addition, the cross-sectional view of the cross section of the U-11 line is shown. Figure 1 shows the device as shown in Figure 10. The sensory light combination of the third embodiment is only in the center of the dielectric cover 12, even in the first! To the first

S 25 201145346 4 partial cover plates 12A, l2B, nr, claws plus, with a dielectric barrier - a central part is also equipped with f2 = 3 18 . The central portion of the first to fourth partial cover plates 12A and the support members 1616 do not exist as a branch member, and the dielectric cover fixture 18 is not fixed as shown in FIG. A suspension member 11G as a cutting member. Further, although the cover 11 is representatively shown, the dielectric cover 18 for fixing the first partial cover 12A is fixed, but the dielectric cover of the second to fourth partial covers 12B to 2D is fixed. The same applies to the plate fixture 18. The p-suspension 1HM supports the support member of the dielectric wall 6 to constitute the first member. The suspension member 110 is independently disposed with respect to the suspension members 8A to 8E, the support beam 16, the support frame 7, and the like. A gas passage path 15 connected to the gas supply pipe 21 is formed inside the suspension member 110. Further, the lower end of the suspension member 110 has a cylindrical expansion portion 11a expanded. The expanded portion u〇a and the i-th portion of the wall 6A are engaged to support the portion thereof. Further, a concave portion UOb is formed at the lower end of the expanded portion a10a, and a screw groove u〇c is formed in the inner periphery of the concave portion 〇b. The dielectric cover fixture 18 can be secured to the suspension member 110 by screwing the thread 18b2 of the projection 18b of the dielectric cover fixture 18 to the channel 110c. " The hanger 110 is supported by a mechanical margin on the upper wall portion 2a of the body container 2. More specifically, a plate 111 is provided on the upper portion of the hanger 110, and the hanger 110 is coupled between the pad 1U and the upper wall portion 2a via the cushioning member 112. The buffer member 112 is made of, for example, fluorine

S 26 201145346 It is composed of elastic materials such as rubber and stone rubber and spiral members. By interposing the cushioning member_deformation, it is possible to be supported with respect to the upper portion of the main body container 2 and the mounting member, and is supported by the upper wall of the main body container 2 in a state in which a plurality of displacements are connected. # & a maintains a number of mechanical margins Zhang or deformation II I: Yes: == heated and swelled: two unnecessary stress can be solved, can be 2, ^ quality cover 12 damage. 7丨电贞2 6、, 丨宅 Dielectric cover fixture 18 拔 ^ ^ 2 implementation of the same form. The dielectric first and the first support portion 18a (supporting the first portion=two' cookware 18-based portion 18b. part of the 18W plate) and the base gas introduction flow are internally connected to form a connection (5) The "first" path is formed, the gas introduction flow path system constitutes "the second gas guide ^ ^, and the milk guide channel flows into the gas flow path of the river 1 part of the guide channel: the flow path 101 is configured to The rolling body introduction flow path 151 and the processing of the 邱 俜 俜 。 。 。 。 。 此外 此外 此外 此外 此外 此外 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于Part 2: The terminal surface of the 2 a flow path is opened to the processing chamber 5. The '18 road 18' is provided with the base portion 18b adjacent to the gas introduction to the expanded portion 11A. The cover plate fixture 18 can also be indirectly attached to the mountain 4 suspension member 110.

S 27 201145346 Although the illustration is omitted, the dielectric cover fixture 18 installed in the central portion of the second to fourth partial covers 12B, 12C, and 12D is also fixed to the suspension member 110 in the same manner as described above. . Further, in the present embodiment, the dielectric cover 12 is provided with a notch portion at a portion where each of the dielectric cover fixtures 18 is disposed. Specifically, as shown in FIG. 10, corresponding to the dielectric cover fixture 18 installed at the center of the cross-shaped support beam 16, the first to fourth partial covers 12A, 12B, 12C, 12D forms arcuate notches 12, 122, 123, 124. Further, circular notches (i.e., openings) 133, 134, 135, and 136 are provided in the central portions of the first to fourth partial cover plates 12A, 12B, 12C, and 12D, respectively. The circular notch portions 133, 134, 135, 136 have a size that can be inserted into the convex portion 18b1 of the dielectric cover fixture 18. In the same manner, the inductively coupled plasma processing apparatus of the present embodiment can be used not only from the center of the dielectric wall 6 but also from the central portions of the first to fourth partial covers 12A, 12B, 12C, and 12D. The gas introduction flow path 151 and the dielectric cover fixture 18 of the suspension member 110 introduce gas into the processing chamber 5, so that uniform plasma can be stably generated by the uniform diffusion of the gas in the processing chamber 5. Further, the position and the number of the suspension member 110 and the dielectric cover fixture 18 are not limited to being arranged in the central portion of the first to fourth partial covers 12A, 12B, 12C, and 12D, and may be disposed at any position. Any number. Further, since the five dielectric cover fixtures 18 and the second embodiment can also independently control the flow rate of the gas from the gas supply device 20 by the valve, the plasma generation condition in the processing chamber 5 can be affected.

S 28 201145346 f Do not adjust the settings provided by each dielectric cover fixture. Further, in the present embodiment, the suspension members 8A and the suspension members (10) may be individually connected to the first to third embodiments, and the dielectric material 18 may be detachably attached. Therefore, only the dielectric cover fixture 18 can be replaced except for the dielectric dance 12 . In addition, the gas secrets of the second set of 18 can be prepared in advance by the opening diameter of the door opening, the opening area (opening ratio), and the selection of the optimum dielectric cover; In the case of the body, in the case of the dielectric f cover (four) with 18, ^^ to configure the opening diameter of the gas iron, : = the same dielectric cover fixture 18, still adjustable ^ f) from the 6ΐΐ: Γ Γ Γ Γ Γ Γ Γ Γ Γ 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体In addition, the individual adjustment of the degree of the singularity can be adjusted even if the dielectric cover is fixed and the 18-clip changes the number of the arrangement of the electro-convective blocking members 2〇1, and the area of the two-==8 ports can be adjusted widely. The gas ejection pressure of the emulsion hole 1〇1a of the dielectric cover. From the _ easy configuration = to optimize the gas supply balance in the processing chamber 5, in the second embodiment of the above-mentioned second embodiment, should be engaged in the county, the age of electricity to change the dielectric cover without reading holes Fixture. For example, Figure 12 shows

S 29 201145346 The cross-sectional structure of the dielectric cover fixture (10) that can be installed in place of the dielectric cover can be replaced by the induction handle.介^The cover fixture (10) In addition to the point of the body-reducing flow path HH and the gas hole l〇la, the η » + ^ person, and the undisposed plasma blocking member, the 盖板 ^ electric cover fixture 18 Has the same composition. That is, the dielectric 12;, 疋ί 18° system has a branch portion 18Ga (supporting a dielectric cover to a partial cover) - and a base 180b (connected to the support. 卩 18a). The support portion 18 is formed annularly around the base portion (10) b so as to surround it. The base of the dielectric cover fixture has a convex portion 1 which protrudes into a column shape at the upper portion of the 18Gb, and a position 1_2 is formed around the convex portion 18%1. The convexity of the base i8〇b = 180M is solid inside. In this manner, the dielectric cover is fixed and (10) does not have a configuration corresponding to the first body introduction channel of the dielectric f-cover cooker 18 (gas introduction channel 101 m gas hole = la) ! The gas guiding flow path and the gas flow inside the processing chamber are blocked and blocked. And the gas-based electric cover plate cooker _ is equipped with a body without a body hole „ cover fixed 纟 (10) state of the state =

The bottom plate of the board and the book cover cover fixture. In the case shown in FIG. 13, the first to fourth partial cover plates 12A, i2B, and the central portion of the HU are all equipped with the present invention. The gas hole 1 is a dielectric jaw holder 18. On the other hand, a dielectric jaw holder (10) having no gas holes is attached to the central portion of the dielectric wall beam 16. Thus, Replace any position =

S 30 201145346 Dielectric cover fixture 18, cover fixture 18G is a dielectric distribution without gas holes. Further, the position of the gas supplied from the inside of the chamber 5 is not set to the position where the fixture 18 is fixed to the dielectric cover.兀 Not limited to the configuration of Figure 13, it can be done with a variety of cover plates and as described in 18 configurations. The dielectric 18a) will belong to the dielectric component (for example, the symbol of Figure 5 continues here). The lower side of the lower side has the underside of the lower side (for example, the following is the same as the coffee) (for example, 12A1, u〇 of Fig. 5) and the dielectric wall Λ, the member (the (four) beam 16, the suspension member and the base (for example, Fig. 5 Between ^ and ^ and the branch; the part is arranged in the support tiger 18b) ' is connected to the support, the position is close to the side of the X 铋 #牙口 H, in relation to the support member The way in which the f relationship does not change is fixed. 丨Electrical cover fixture 18 > ± , i The at least one of the electric wall 6 is supported by the support phase and the cut member and the dielectric cover 丨 2 Hold the corresponding dielectric energy. From the second == two = :! pass through the plurality of through holes of the wire shaft: that is, ^ mouth 疋. 疋 to prevent the dielectric cover 12 from the hole Excessive application in the vicinity of the through hole:: Damage to the dielectric cover 12. The twin branch is different from the use of a plurality of screws to fix the dielectric to The material-like conventional method is easy to load and unload when the training time cover = 201145346, and the electric raft plate 12 can be replaced or cleaned without any particles caused by the screw. The support portion 18a formed as the cone 18 In the following, the relationship is 18b, and the distance from the top is removed from the base to suppress the particles generated by the support portion 18a of the dielectric cover fixture 18. Further, due to the dielectric cover fixture 18 Even if there is no support, the clamp can be easily set up, so it can be installed with its dielectric cover 12. This can be used to treat the chamber 5 via the dielectric cover (4). The body is not required to perform the processing for diffusing the gas in the support beam 16 and does not require the formation of a plurality of fine gas holes in the dielectric cover 12, which can greatly reduce the labor and cost of processing. The portion (4) of the beam 16 can be supplied with gas through the dielectric f cover fixture, so that the degree of freedom of the portion of the gas in the processing chamber 5 is changed, and the uniform inductively coupled plasma is formed in the processing chamber 5. The above is effective. In addition, the present invention is not In the above embodiments, various modifications can be made. For example, in the present invention, the means for fixing the cover fixture is not limited to the embodiments. [FIG. 1 shows the first embodiment of the present invention. Figure 2 is a cross-sectional view of the inductively coupled plasma processing apparatus of the embodiment. Figure 2 shows the dielectric wall of the Figure 1 and the suspension (suspender)

A perspective view of S 201145346. Fig. 3 is a perspective view of the dielectric wall and the rfj frequency antenna of Fig. 1. Figure 4 is a bottom plan view showing the dielectric cover and the dielectric cover fixture of Figure 1. Fig. 5 is a cross-sectional view showing a section of the position shown by the line 5 - 5 in Fig. 4. Figure 6 is a cross-sectional view showing a dielectric cover fixture equipped with a plasma shielding member. Figure 7 is a cross-sectional view showing a dielectric cover fixture equipped with a plurality of plasma shielding members. Fig. 8 is a cross-sectional view showing the inductively coupled plasma processing apparatus of the second embodiment. Figure 9 is a bottom plan view showing the dielectric cover of Figure 8 and the dielectric cover fixture. Fig. 10 is a bottom plan view showing a dielectric cover and a dielectric cover fixture of the inductively coupled plasma processing apparatus of the third embodiment. Figure 11 is a cross-sectional view showing a section taken along the line 11-11 in Figure 10. Figure 12 is a cross-sectional view showing the dielectric cover fixture for exchange. Figure 13 is a bottom plan view showing a dielectric cover equipped with a dielectric cover fixture and an exchange dielectric cover fixture.

S 33 201145346 [Description of main component symbols] 1,1a inductively coupled plasma processing device 2 body container 4 antenna room 5 processing chamber 6 dielectric wall 7 support frame 12 dielectric cover 12AU2B1 supported portion 13 antenna 16 support beam 18 dielectric cover fixture 18a support portion 18b base portion 21a gas introduction flow path 21b gas introduction flow path 101 gas introduction flow path 101a gas hole

S 34

Claims (1)

201145346 VII. Patent application scope: 1. A cover fixing device for an inductively coupled plasma processing device, which is used for inductively coupling a plasma processing device to fix a cover plate; the inductively coupled plasma processing device is provided with: a processing chamber, a window member constituting a ceiling portion for performing plasma processing; a gas supply device for supplying gas to the processing chamber; and a high frequency antenna disposed above the window member to form an induced electric field in the processing chamber; a member supporting the window member; and a cover covering the underside of the window member; wherein the cover fixture is provided with a support portion supporting the cover and a base connected to the support portion; The base portion is provided with a gas introduction flow path' and becomes a part of a gas flow path for supplying gas to the processing chamber from the gas supply device. 2. The cover fixture of claim 1, wherein the gas introduction flow path has a gas compression portion having a conductivity less than other portions of the gas flow path. 3. The cover fixture of claim 2, wherein the gas compression portion is a gas hole for the processing chamber. 4. The cover fixture of claim 1, wherein the gas introduction flow path is provided with an electrical blocking member to prevent the electricity from entering the upstream side of the gas flow path from the processing chamber. 5. The cover fixture of claim 4, wherein the plasma interrupting member is provided with: a body; and a plurality of through openings, S 35 201145346 formed on the body to allow gas to pass. 6. The cover fixture of claim 5, wherein the through opening and the gas hole are disposed at positions that do not linearly overlap. 7. The cover fixture of claim 5, wherein the conductivity of the gas hole is less than the conductivity of the through opening. 8. The cover fixture of any one of claims 4 to 7, wherein one or more of the plasma interrupting members are detachably disposed in the gas introduction flow path. 9. The cover fixture of claim 8, wherein the plasma interrupting member and the cover fixture are independently replaceable. 10. The cover fixture of any one of claims 1 to 7 wherein a gas diffusion space is formed in the gas introduction flow path. 11. The cover fixture of any one of clauses 1 to 7, wherein the support member has a first member coupled to an upper wall portion of the body container of the inductively coupled plasma processing apparatus, the base member Directly or indirectly fixed to the first member. 12. The cover fixture of claim 11, wherein the first member is supported by a mechanical margin on the upper wall of the body container of the inductively coupled plasma processing apparatus. The cover fixture according to any one of claims 1 to 7, wherein the support member has a first member coupled to an upper wall portion of the body container of the inductively coupled plasma processing apparatus, and a joint S 36 201145346 The second member of the first member; the base portion is directly or indirectly fixed to the second member. 14. The cover fixture of any one of clauses 1 to 7 wherein the support is directly or indirectly held between the support member and the window member as at least one of the cover member A part of the board is supported by the support portion. 15. The cover fixture of claim 14, wherein the support has an upper surface that supports the underside of the supported portion, and a distance from the upper portion that becomes smaller as it leaves the base. 16. An inductively coupled plasma processing apparatus comprising a cover fixture of any one of claims 1 to 7 in one to a plurality of locations. 17. The inductively coupled plasma processing apparatus of claim 16, wherein the cover has a notch for mounting the cover fixture. 18. The inductively coupled plasma processing apparatus of claim 16, wherein the replacement cover fixture that is replaceable with the cover fixture replaces at least one of the cover fixtures And the replacement cover fixing device is provided with a support portion for supporting the cover plate and a base portion connected to the support portion; and the base portion has a gap between the gas introduction flow path and the processing chamber The blocking structure of the airflow. S 37