KR20110095824A - Cover fixing member and inductively coupled plasma processing apparatus - Google Patents

Abstract

PURPOSE: A cover fixture and an apparatus for processing the inductive coupling of plasma are provided to have the function of fixing a cover and the function of supplying gas using a supporting part, which supports a cover, and a base which is connected to the supporting unit. CONSTITUTION: A dielectric cover fixture(18) comprises a supporting part(18a) respectively, which supports a first part cover(12A) and a second part cover(12B), and a base(18b). The top of the base includes a convex part(18b1) projected in a cylindrical shape. A screw thread(18b2) is formed around the convex part. A gas inlet way(101) of a square shape, which is connected to a gas inlet way(21b) of a stick shape, is formed inside the convex part. The gas inlet ways are connected to the inside of a process chamber. A vent(101a) is formed passing through the low wall of the base.

Description

COVER FIXING MEMBER AND INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS}

The present invention relates to an inductively coupled plasma processing apparatus, comprising a cover fixture for fixing a cover covering a lower surface of a window member constituting a ceiling portion of a processing chamber, and an inductively coupled plasma processing apparatus having the same.

In the manufacturing process of an FPD (flat panel display), various plasma processes, such as plasma etching, plasma ashing, and plasma film-forming, are performed with respect to the FPD glass substrate. As an apparatus for performing such plasma processing, an inductively coupled plasma (ICP) processing apparatus capable of generating a high density plasma is known.

The inductively coupled plasma processing apparatus is airtightly held, and includes a processing chamber in which plasma processing is performed on a substrate to be processed, and a high frequency antenna disposed outside the processing chamber. The processing chamber has a window member made of a material such as a dielectric constituting the ceiling portion, and the high frequency antenna is disposed above the window member. In this inductively coupled plasma processing apparatus, an induction electric field is formed in the processing chamber through the window member by applying high frequency power to the high frequency antenna, and the induction electric field converts the processing gas introduced into the processing chamber into plasma. Using the plasma, a predetermined plasma treatment is performed on the substrate.

In the inductively coupled plasma processing apparatus, when the lower surface of the window member is exposed to the processing chamber, the lower surface of the window member is damaged by the plasma. Since the window member cannot be easily attached or detached, it cannot be easily replaced or cleaned even if damaged. Therefore, as described in patent document 1, covering the lower surface of the window member with the cover which can be easily detached is performed. As a result, the lower surface of the window member can be protected, and the damaged cover can be easily replaced or cleaned.

Japanese Patent Application Laid-Open No. 2001-28299

As described in Patent Literature 1, the cover has been conventionally fixed by a plurality of screws to the support member of the window member. In more detail, in the conventional method of fixing the cover, a plurality of through holes through which the shaft portion of the screw is inserted are formed in the vicinity of the periphery of the cover, respectively, and from each of the through holes from the lower surface side of the cover, The shaft portion of the screw was inserted, and the shaft portion was twisted into a support member supporting the window member to fix the cover. However, the following problem has arisen in this conventional method of fixing the cover.

When plasma processing is performed in the processing chamber, the lower surface of the cover is continuously exposed to the plasma, so that the temperature rises. In the process of raising the temperature of the lower surface of the cover, nonuniform temperature distribution occurs on the lower surface of the cover, and as a result, slight deformation such as stretching or bending occurs in the cover. At this time, a difference arises in the deformation amount of a cover and the deformation amount of a support member from the difference of the thermal expansion coefficient of the material of a cover (for example, ceramics), and the material of a support member (for example, aluminum). Therefore, when the cover is fixed to the support member by screws so that the portion near the through-hole of the cover is not displaced at all, excessive stress is applied to the portion near the through-hole of the cover, and the cover may be damaged from this portion.

Therefore, the diameter of the through hole of the cover is made sufficiently larger than the diameter of the screw shaft, and the mechanism in which the cover and the screw are relatively displaceable is provided so that excessive stress is not applied to the portion near the through hole of the cover. I think. However, since the stress applied to the cover when the cover is deformed tends to be concentrated in the vicinity of the through hole, damage to the cover due to the occurrence of cracks starting from the through hole is likely to occur.

In the conventional method for fixing the cover, a plurality of convex portions formed by the head portions of the plurality of screws are formed on the ceiling surface of the processing chamber. By-products generated during the plasma treatment tend to adhere to such convex portions. Therefore, during plasma processing, the by-product adhering to the head part of a screw peels off from the head part of a screw once, and a particle (floating particle) generate | occur | produces, and this particle may cause an etching defect. In addition, the head portion of the screw is consumed by the plasma, and particles are generated, which may cause etching defects. Moreover, in the conventional fixing method of the cover, since the cover is fixed using many screws, there is a problem that the workability of attaching and detaching the cover is bad. In addition, in response to the increase in size of the FPD, the processing chamber of the inductively coupled plasma processing apparatus is also enlarged in recent years. In an inductively coupled plasma processing apparatus having a large processing chamber, the window member and the cover may be constituted by a plurality of divided portions. In this case, since more screws are used for fixing the cover, workability of attaching and detaching the cover is further lowered, and there is an increased risk of particle generation.

In addition, the conventional inductively coupled plasma processing apparatus employs a method of forming a gas introduction path in a supporting member such as a beam supporting the window member, and introducing a gas into the processing chamber through a plurality of small gas holes formed in the cover. there was. Therefore, while it is necessary to process the gap | gap part for diffusing gas in a beam, it is necessary to also form many minute gas holes in a cover, and the labor of labor and cost of processing became a big burden. In addition, since the gas introduction passage could not be disposed in the site without the support member, the site for introducing the gas into the process chamber was limited to the arrangement position of the support member, and the gas was supplied in a uniform distribution in the process chamber, resulting in uniform induction. There is room for improvement from the viewpoint of forming a bonded plasma.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an inductively coupled plasma processing apparatus, in which damage to a cover covering a lower surface of a window member and generation of particles can be suppressed, and a cover can be easily detached. At the same time, it is to provide a cover fixture that can increase the design freedom of gas introduction.

The cover fixture of the inductively coupled plasma processing apparatus of the present invention is used in the inductively coupled plasma processing apparatus. This inductively coupled plasma processing apparatus has a window member constituting a ceiling portion, a processing chamber in which plasma processing is performed, a gas supply device for supplying gas to the processing chamber, and an upper portion of the window member, which is disposed in the processing chamber. A high frequency antenna forming an electric field, a supporting member for supporting the window member, and a cover covering the lower surface of the window member are provided. The cover fixture of the present invention is to fix the cover.

The cover fixture of the present invention includes a support portion for supporting the cover and a base connected to the support portion, the gas introduction passage forming part of a gas flow path for supplying gas from the gas supply device to the processing chamber. Is installed.

In the cover fastener of the present invention, the gas introduction passage may have a gas orifice portion having a smaller conductance than other portions of the gas flow path. In this case, the gas orifice portion may be a gas hole facing the processing chamber.

Further, in the cover fastener of the present invention, a plasma blocking member may be provided in the gas introduction passage to prevent plasma from entering into the upstream side of the gas flow passage from the processing chamber. In this case, the plasma blocking member may be provided with a main body and a plurality of through openings formed in the main body to allow gas to pass therethrough. Further, the through opening and the gas hole may be disposed at a position where they do not overlap linearly. In addition, the conductance of the gas hole may be small with respect to the conductance of the through opening. In addition, one or a plurality of the plasma blocking members may be disposed in the gas introduction passage in a detachable manner. The plasma blocking member and the cover fixture may be replaced independently.

Moreover, in the cover fixture of this invention, the gas diffusion space may be formed in the said gas introduction path.

Further, in the cover fastener of the present invention, the support member has a first member connected to an upper wall portion of a main body container of the inductively coupled plasma processing apparatus, and the base is fixed directly or indirectly to the first member. You may be. In this case, the first member may be supported with a mechanical gap in the upper wall portion of the main body container of the inductively coupled plasma processing apparatus.

In the cover fastener of the present invention, the support member has a first member connected to an upper wall portion of a main body container of the inductively coupled plasma processing apparatus, and a second member connected to the first member, The second member may be fixed directly or indirectly.

In the cover fastener of the present invention, the support portion may support the supported portion that forms part of the cover by directly or indirectly sandwiching the support member and at least one of the window member.

In the cover fastener of the present invention, the support portion may have an upper surface for supporting the lower surface of the supported portion, and a lower surface with which the distance from the upper surface becomes smaller as it is spaced apart from the base.

In the inductively coupled plasma processing apparatus of the present invention, the cover fastener according to any one of the above is mounted at one to a plurality of locations.

In the inductively coupled plasma processing apparatus of the present invention, the cover may have a cutout for mounting the cover fixture.

In the inductively coupled plasma processing apparatus of the present invention, the cover fixture is configured to be interchangeable, and includes a support portion for supporting the cover and a base connected to the support portion, wherein the base is formed of the gas introduction passage and the processing chamber. A replacement cover fastener having a closed structure for blocking the flow of gas inside may be mounted in place of at least one of the cover fasteners.

The cover fixture of this invention is provided with the support part which supports a cover, and the base connected to the support part, The base part is provided with a part of the gas flow path which supplies gas from a gas supply apparatus to a process chamber. That is, the cover fastener of the present invention has a function of fixing the cover and a function of supplying gas into the process chamber through the cover fastener.

As a result, in the inductively coupled plasma processing apparatus of the present invention, the cover can be fixed without forming a plurality of through holes through which the shaft portion of the screw is inserted into the cover, thereby reducing the number of parts, breaking the cover, and generating particles. Can be suppressed and the cover can be easily attached or detached. In addition, it is not necessary to form voids for gas diffusion in the support member or to form a plurality of gas holes in the cover. In addition, the gas can be supplied even from a site without the support member, and the degree of freedom of the site into which the gas is introduced into the processing chamber is increased, thereby achieving the effect of easily forming a uniform inductively coupled plasma in the processing chamber.

1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a perspective view illustrating the dielectric wall and the suspender in FIG. 1. FIG.
3 is a perspective view showing a dielectric wall and a high frequency antenna in FIG. 1; FIG.
FIG. 4 is a bottom view of the dielectric cover and the dielectric cover fixture in FIG. 1. FIG.
FIG. 5 is a cross-sectional view showing a cross section of a position indicated by a 5-5 line in FIG. 4. FIG.
6 is a cross-sectional view of the dielectric cover fixture with the plasma shielding member disposed thereon.
7 is a cross-sectional view of the dielectric cover fixture in which a plurality of plasma shielding members are disposed.
8 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to a second embodiment.
FIG. 9 is a bottom view of the dielectric cover and the dielectric cover fixture in FIG. 8; FIG.
Fig. 10 is a bottom view showing a dielectric cover and a dielectric cover fixture in the inductively coupled plasma processing apparatus according to the third embodiment.
11 is a cross-sectional view illustrating a cross section of a position indicated by a line 11-11 in FIG. 10.
12 is a sectional view of the dielectric cover fixture for replacement;
Fig. 13 is a bottom view showing a dielectric cover in which a dielectric cover fixture and a replacement dielectric cover fixture are disposed;

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail with reference to drawings.

[First Embodiment]

First, with reference to FIGS. 1-4, the structure of the inductively coupled plasma processing apparatus which concerns on 1st Embodiment of this invention is demonstrated. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus. FIG. 2 is a perspective view showing a dielectric wall as a "window member" and a suspender as a "support member" in FIG. FIG. 3 is a perspective view illustrating the dielectric wall and the high frequency antenna in FIG. 1. FIG. FIG. 4 is a bottom view showing a dielectric cover as a "cover" and a dielectric cover fastener as a "cover fixture" in FIG.

In the inductively coupled plasma processing apparatus 1 shown in FIG. 1, for example, plasma processing is performed on a glass substrate for FPD (hereinafter, simply referred to as a "substrate") S. FIG. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), and the like.

The inductively coupled plasma processing apparatus 1 is disposed in the main body container 2 and the main body container 2, and the dielectric wall 6 as a "window member" which divides the space in the main body container into two upper and lower spaces. The antenna chamber 4 and the processing chamber 5 which are comprised by the (circle) are provided. The antenna chamber 4 defines a space above the dielectric wall 6 in the main body container 2, and the processing chamber 5 defines a space below the dielectric wall 6 in the main body container 2. Define. Thus, the dielectric wall 6 constitutes the bottom of the antenna chamber 4 and at the same time constitutes the ceiling portion of the processing chamber 5. The processing chamber 5 is held airtight, and plasma processing is performed on the substrate there.

The main body container 2 is a rectangular cylinder shape having an upper wall portion 2a, a bottom portion 2b, and four side portions 2c. In addition, the main body container 2 may be a cylindrical container. As a material of the main body container 2, electroconductive materials, such as aluminum and an aluminum alloy, are used. When aluminum is used as the material of the main body container 2, an alumite treatment is performed on the inner wall surface of the main body container 2 so that no contaminants are generated from the inner wall surface of the main body container 2. In addition, the main body container 2 is grounded.

The dielectric wall 6 has a substantially square top and bottom surfaces and a substantially rectangular parallelepiped shape having four sides. The dielectric wall 6 is formed of a dielectric material. As the material for the dielectric wall (6), such as a ceramic or quartz, such as Al ₂ O ₃ is used. As an example, the dielectric wall 6 is divided into four parts. That is, the dielectric wall 6 has the 1st partial wall 6A, the 2nd partial wall 6B, the 3rd partial wall 6C, and the 4th partial wall 6D. In addition, the dielectric wall 6 does not need to be divided into four parts.

The inductively coupled plasma processing apparatus 1 further includes a support shelf 7 and a support beam 16 as a support member for supporting the dielectric wall 6. The support shelf 7 is attached to the side wall 2c of the main body container 2. The support beam 16 has a cross shape as shown in FIG. Four partial walls 6A, 6B, 6C, and 6D of the dielectric wall 6 are supported by the support shelf 7 and the support beam 16. In addition, the support shelf 7 and the support beam 16 may be integrally formed.

The inductively coupled plasma processing apparatus 1 uses a cylindrical suspender 8A and a cylindrical suspender 8B, 8C, 8D, and 8E each having an upper end connected to the upper wall portion 2a of the main body container 2. It is equipped with more. The support beam 16 is connected to the lower end part of the suspender 8A in the center part (intersection part of a cross) of the upper surface. In the present embodiment, the suspenders 8A to 8E and the support beams 16 are both support members, the suspender 8A constitutes a "first member", and the support beam 16 constitutes a "second member". . Moreover, the support beam 16 is connected to the lower end part of the suspenders 8B, 8C, 8D, and 8E in four places between the center part in the upper surface, and the four tip parts of the cross. In this way, the support beam 16 is suspended from the upper wall portion 2a of the main body container 2 by five suspenders 8A to 8E, and is substantially centered in the vertical direction in the interior of the main body container 2. In the position of, it is arranged to maintain a horizontal state. The gas introduction path 21a which comprises a part of "the 1st gas introduction path" is formed in 8 A of suspenders.

As a material of the support beam 16, it is preferable to use metal materials, such as aluminum, for example. When aluminum is used as the material of the support beam 16, anodization is performed on the surfaces inside and outside the support beam 16 so that no contaminants are generated from the surface. Inside the support beam 16, a gas introduction passage 21b constituting a part of the "first gas introduction passage" is formed.

The inductively coupled plasma processing apparatus 1 is a high frequency antenna (hereinafter, simply referred to as an “antenna”) arranged inside the antenna chamber 4, that is, outside the processing chamber 5 and above the dielectric wall 6 (13). ) Is further provided. As shown in FIG. 3, the antenna 13 has a substantially square planar square vortex shape. The antenna 13 is disposed on the upper surface of the dielectric wall 6. Outside of the main body container 2, a matching unit 14 and a high frequency power supply 15 are provided. One end of the antenna 13 is connected to the high frequency power supply 15 via the matching unit 14. The other end of the antenna 13 is connected to the inner wall of the main body container 2 and is grounded through the main body container 2.

The inductively coupled plasma processing apparatus 1 further includes a dielectric cover 12 as a "cover" covering the lower surface of the dielectric wall 6. The dielectric cover 12 has a substantially square top and bottom surfaces and a plate shape having four sides. The dielectric cover 12 is formed of a dielectric material. As a material of the dielectric cover 12, for example a ceramic or quartz, such as Al ₂ O ₃ is used.

As an example, the dielectric cover 12 is divided into four parts like the dielectric wall 6. That is, as shown in FIG. 4, the dielectric cover 12 has a first partial cover 12A, a second partial cover 12B, a third partial cover 12C, and a fourth partial cover 12D. . The first to fourth partial covers 12A, 12B, 12C, and 12D respectively cover the lower surfaces of the first to fourth partial walls 6A, 6B, 6C, and 6D of the dielectric wall 6. In addition, the dielectric cover 12 may not be divided into four parts, or may be divided into five or more parts.

As shown in FIG. 4, the inductively coupled plasma processing apparatus 1 includes a dielectric cover fixture 18 as a "cover fixture" according to the present embodiment for fixing the dielectric cover 12. The inductively coupled plasma processing apparatus 1 further includes dielectric cover fixtures 19A, 19B, 19C, and 19D in addition to the dielectric cover fixture 18. The dielectric cover 12 is fixed by the dielectric cover fasteners 18, 19A, 19B, 19C, and 19D. In addition, the fixing of the peripheral part of the dielectric cover 12 is not limited to four places by code | symbol 19A, 19B, 19C, and 19D.

When plasma processing is performed on the substrate S, the high frequency power for induction field formation (for example, high frequency power of 13.56 MHz) is supplied from the high frequency power supply 15 to the antenna 13. As a result, an induction electric field is formed in the processing chamber 5 by the antenna 13. This induction electric field converts the processing gas described later into plasma.

The gas supply device 20 is further provided outside the main body container 2. The gas supply device 20 supplies the processing gas used for the plasma processing into the processing chamber 5 through the gas flow path. The gas supply device 20 is connected to the gas introduction passage 21a formed in the hollow portion of the suspender 8A via the gas supply pipe 21 as the "gas pipe". This gas introduction passage 21a is connected to the gas introduction passage 21b formed in the support beam 16. The "gas flow path" in the inductively coupled plasma processing apparatus 1 of the present embodiment includes a gas supply pipe 21 as a gas pipe, a gas introduction path 21a as a "first gas introduction path", and a gas introduction path 21b. And the gas introduction passage 101 (described later) as the "second gas introduction passage". When the plasma processing is performed, the processing gas is a gas supply pipe 21, a gas introduction passage 21a formed in the suspender 8A, a gas introduction passage 21b formed in the support beam 16, and a gas in the dielectric cover fixture 18. Through the introduction passage 101, it is supplied into the processing chamber 5. As the processing gas, for example, SF ₆ gas, Cl ₂ gas, or the like is used. In addition, although the valve and flow control apparatus which are not shown in figure may be provided in the gas flow path, description is abbreviate | omitted here.

The inductively coupled plasma processing apparatus 1 further includes a susceptor 22, an insulator frame 24, a support 25, a bellows 26, and a gate valve 27. The strut 25 is connected to a lifting device (not shown) provided below the main body container 2, and protrudes into the processing chamber 5 through an opening formed in the bottom of the main body container 2. In addition, the support | pillar 25 has a hollow part. The insulator frame 24 is provided on the support 25. The insulator frame 24 has a box shape with an open top. The bottom part of the insulator frame 24 is formed with the opening which leads to the hollow part of the support | pillar 25. As shown in FIG. The bellows 26 surrounds the support 25 and is hermetically connected to the insulator frame 24 and the bottom inner wall of the main body container 2. Thereby, the airtightness of the process chamber 5 is maintained.

The susceptor 22 is housed in the insulator frame 24. The susceptor 22 has a mounting surface 22A for mounting the substrate S. As shown in FIG. The mounting surface 22A faces the dielectric cover 12. As a material of the susceptor 22, electroconductive material, such as aluminum, is used, for example. When aluminum is used as the material of the susceptor 22, anodization is performed on the surface of the susceptor 22 so that no contaminants are generated from the surface.

Outside of the main body container 2, a matching device 28 and a high frequency power supply 29 are further provided. The susceptor 22 is connected to the matching device 28 through an conducting rod penetrated through the opening of the insulator frame 24 and the hollow portion of the support 25, and also through the matching device 28, a high frequency power source ( 29). When the plasma processing is performed on the substrate S, the susceptor 22 is supplied with a bias high frequency power (for example, 3.2 MHz high frequency power) from the high frequency power supply 29. This high frequency power is used to effectively attract ions in the plasma to the substrate S loaded on the susceptor 22.

The gate valve 27 is provided on the side wall of the main body container 2. The gate valve 27 has an opening / closing function, maintains the airtightness of the processing chamber 5 in the closed state, and can transfer the substrate S between the processing chamber 5 and the outside in the open state.

The vacuum device 30 is further provided outside the main body container 2. The vacuum apparatus 30 is connected to the process chamber 5 via the exhaust pipe connected to the bottom part of the main body container 2. When plasma processing is performed on the substrate S, the vacuum apparatus 30 exhausts air in the processing chamber 5 to maintain the inside of the processing chamber 5 in a vacuum atmosphere.

Next, with reference to FIGS. 4-7, the dielectric cover fixture which concerns on this embodiment is demonstrated in detail. 4, dielectric cover 12 and dielectric cover fixtures 18, 19A, 19B, 19C, and 19D are shown. It is sectional drawing which shows the cross section of the position shown by the 5-5 line | wire in FIG.

As described above, the dielectric cover 12 has first to fourth partial covers 12A to 12D. In FIG. 4, the first partial cover 12A is disposed in the upper left region of the entire arrangement region of the dielectric cover 12, and the second partial cover 12B is the right side of the arrangement region of the entire dielectric cover 12. Disposed in an upper region, the third partial cover 12C is disposed in an area below the left side of the arrangement region of the entire dielectric cover 12, and the fourth partial cover 12D is an arrangement region of the entire dielectric cover 12 It is arrange | positioned in the area of the lower right side among.

In the center portion of the dielectric cover 12, the first to fourth partial covers 12A, 12B, 12C, and 12D are arc-shaped cutouts 121, 122, 123, and 124 which become circular openings when they are joined. Is formed.

The dielectric cover fasteners 18, 19A, 19B, 19C, and 19D are each provided with a support part and a base. The support portion is disposed below the supported portion that is part of the dielectric cover 12, and is a portion that supports the supported portion.

The shape of the dielectric cover fastener 18 seen from the processing chamber 5 side is a circular shape slightly larger than the circular openings formed by the cutouts 121, 122, 123, 124 at the central portion of the dielectric cover 12. The dielectric cover fixture 18 is arranged to cover the circular opening of the dielectric cover 12. In addition, a plurality of gas holes 101a are formed in the dielectric cover fixture 18. Although six gas holes 101a are shown in FIG. 4, the number of gas holes 101a is arbitrary. In addition, the shape of the dielectric cover fixture 18 seen from the process chamber 5 side is not limited to circular, For example, polygonal shapes, such as a square, may be sufficient.

The shapes of the dielectric cover fixtures 19A to 19D seen from the process chamber 5 side are all rectangular. In addition, the "cover fixture" in this invention is the dielectric cover fixture 18, and detailed description is abbreviate | omitted about the dielectric cover fixtures 19A-19D.

Next, the structure and operation of the dielectric cover fixture 18 will be described in detail. The dielectric cover fastener 18 is provided with the support part 18a which supports a part of 1st thru | or 4th partial cover 12A-12D, and the base part 18b connected to this support part 18a. In the dielectric cover fastener 18 of this embodiment, the annular support part 18a is integrally formed so that the circumference | surroundings of the base 18b may be enclosed.

On the other hand, as shown in FIG. 5, 12 A of 1st partial covers have the to-be-supported part 12A1. The supported portion 12A1 has a lower surface 12A1a and a side end portion 12A1b subsequent to the lower surface 12A1a. The side end portion 12A1b is also an end edge of the cutout 121. In the example shown in FIG. 5, the upper surface of the supported portion 12A1 is in contact with the lower surface of the support beam 16, whereas the upper surface of the supported portion 12A1 is formed of the support beam 16 and the first partial wall 6A. It is sufficient to be in contact with at least one lower surface. Similarly, the second partial cover 12B has a supported portion 12B1. The supported portion 12B1 has a lower surface 12B1a and a side end portion 12B1b connected to the lower surface 12B1a. In the example shown in FIG. 5, the upper surface of the supported portion 12B1 is in contact with the lower surface of both the support beam 16 and the second partial wall 6B, but the upper surface of the supported portion 12B1 is the support beam 16. ) And at least one lower surface of the second partial wall 6B may be in contact with each other. The third and fourth partial covers 12C and 12D also have the same supported portions as those of the supported portions 12A1 and 12B1, respectively. The support portion 18a of the dielectric cover fixture 18 has an upper surface 18a1 that supports the lower surfaces 12A1a, 12B1a, etc., such as these supported portions 12A1, 12B1, and a lower surface 18a2. The lower surface 18a2 of the support part 18a becomes a tapered surface from which the distance from the upper surface 18a1 of the support part 18a becomes small as it is spaced apart from the base 18b. The support part 18a may make it indirectly support the to-be-supported part 12A1, 12B1 etc. of the dielectric cover 12 through a 3rd member, for example.

The shape of the base 18b seen from the process chamber 5 side is a shape slightly smaller than the shape of the circular opening part of the dielectric cover 12. As shown in FIG. An upper portion of the base 18b of the dielectric cover fastener 18 has a convex portion 18b1 projecting in a cylindrical shape, and a thread 18b2 is formed around the convex portion 18b1. The convex portion 18b1 of the base 18b is inserted into the circular opening of the dielectric cover 12.

Inside the convex part 18b1 in the base 18b, the gas introduction path 101 which is a "second gas introduction path" connected to the gas introduction path 21b is formed. The gas introduction passage 101 constitutes a part of the gas flow passage, and is a portion that communicates the gas introduction passage 21b with the interior of the processing chamber 5. The base 18b is fixed to the support beam 16 directly or indirectly adjacent to the end of this gas introduction passage 21b. In addition, the base 18b is provided with the gas hole 101a as a "gas orifice part" in several places. The gas hole 101a penetrates the bottom wall of the base 18b, forms a part of the gas introduction path 101, and opens toward the processing chamber 5 as an end portion of the gas flow path.

The base 18b of the dielectric cover fixture 18 is fixed so that the positional relationship with the support beam 16 as the support member is not changed. The support beam 16 has a recessed part 16a, and the screw groove 16b is formed in the inner periphery of this recessed part 16a. The dielectric cover fastener 18 then screws the thread 18b2 and the screw groove 16b to twist the convex portion 18b1 of the base 18b into the recessed portion 16a of the support beam 16. Is fixed to the support beam 16. In this way, the dielectric cover fastener 18 can be fixed to the support beam 16 in the convex portion 18b1 without using a fixing means for a separate component such as a screw, thereby reducing the number of components. In addition, it is possible to eliminate the possibility of particle generation from the head of the screw exposed to the plasma. In FIG. 5, the screw 18b2 of the base 18b of the dielectric cover fixture 18 is directly screwed into the screw groove 16b of the support beam 16. However, the dielectric cover fixture 18 is For example, fixing may not be prevented by using a component such as a screw, and the third member may be interposed between the base 18b and the support beam 16.

As enlarged in FIG. 6, the plasma blocking member 201 is disposed in the gas introduction passage 101 provided in the base 18b of the dielectric cover fixture 18. The plasma blocking member 201 has a plurality of through openings 201b in the disc-shaped main body 201a. As a material of the plasma blocking member 201, an insulating material is preferable. The plasma blocking member 201 is inserted into the gas introduction path 101 in a detachable manner. For example, the outer diameter of the plasma blocking member 201 and the inner diameter of the gas introduction passage 101 of the base 18b may be processed and fitted approximately equally, and the outer circumference and the base 18b of the plasma blocking member 201 may be fitted. In the inner circumference of the gas introduction passage 101 of the ()), you may form and mount the screw thread | thread and screw groove which can be screwed, respectively. In addition, the plasma blocking member 201 can be arranged to be spaced apart from the bottom wall of the base 18b on which the gas hole 101a is formed, for example, through a spacer (not shown). Between the plasma blocking member 201 and the bottom wall of the base 18b is a gas diffusion space 103 in the gas introduction passage 101. The gas diffusion space 103 has the function of equalizing the blowing pressure of the gas from the gas hole 101a.

In addition, the through opening 201b of the plasma blocking member 201 and the gas hole 101a of the base 18b do not overlap linearly so that they cannot be seen through the gas introduction passage 21b from within the processing chamber 5. It is arranged in a positional relationship. By arranging the gas holes 101a and the through openings 201b not to overlap linearly, the plasma in the processing chamber 5 intrudes through the gas holes 101a, and the support beam 16 is damaged by the plasma, or Corrosion can be prevented. In FIG. 6, the plasma generated in the processing chamber 5 is indicated by an arrow, and when the plasma enters the gas introduction path 101 from the gas hole 101a, the plasma is blocked by the plasma blocking member 201, and a gas flow path is shown. The intrusion into the gas introduction passage 21b (refer FIG. 5) which is an upstream side of the figure is shown.

In addition, in this embodiment, the through opening 201b and the gas hole 101a are smaller than the conductance of the gas hole 101a of the base 18b compared with the conductance of the through opening 201b of the plasma blocking member 201. The number of openings and the opening area are set. By making the conductance of the gas hole 101a of the base 18b smaller than the conductance of the through-opening 201b of the plasma blocking member 201, the uniform ejection of the gas from the gas hole 101a to the process chamber 5 can be promoted. Can be.

The plasma blocking member 201 and the dielectric cover fixture 18 are each independently replaceable. 5 and 6 show a state in which one plasma blocking member 201 is mounted, it is also possible to arrange a plurality of plasma blocking members 201. In FIG. 7, the state which arrange | positioned two of the plasma blocking member 201A and the plasma blocking member 201B up and down is illustrated. Also in this case, the gas diffusion is spaced between the plasma blocking member 201A and the plasma blocking member 201B and between the bottom wall of the plasma blocking member 201B and the base 18b by interposing a spacer (not shown), for example. It is preferable to allow the space 103 to be formed. Further, the through holes 201b of the plasma blocking members 201A and 201B and the gas holes 101a are arranged so as not to overlap the inside of the gas introduction passage 21b from the process chamber 5 so that they do not overlap linearly. It is preferable. In Fig. 7, the plasma generated in the processing chamber 5 is indicated by an arrow, and when the plasma enters the gas introduction path 101 from the gas hole 101a, it is blocked by the plasma blocking members 201A and 201B. The state which prevents intrusion into the gas introduction path 21b which is an upstream side of a gas flow path is shown. In this way, by arranging the plurality of plasma blocking members, intrusion into the gas introduction passage 21b (see FIG. 5) on the upstream side of the gas flow path can be prevented more reliably.

Second Embodiment

Next, an inductively coupled plasma processing apparatus according to the second embodiment in which the arrangement position of the dielectric cover fixture is changed will be described. In the first embodiment shown in FIG. 1, FIG. 4, etc., the dielectric cover fastener 18 is fixed to the support beam 16 at the center of the dielectric wall 6. However, the dielectric cover fixture 18 can support the dielectric cover 12 at any position below the dielectric wall 6.

8 is a cross-sectional view showing the inductively coupled plasma processing apparatus 1a according to the second embodiment. FIG. 9 is a bottom view showing the dielectric cover 12 and the dielectric cover fixture 18 in the inductively coupled plasma processing apparatus 1a. In addition, in the following description, the inductively coupled plasma processing apparatus 1a of 2nd Embodiment is demonstrated centering on the difference with the inductively coupled plasma processing apparatus 1 (FIG. 1) of 1st Embodiment, and is described in the same structure. The same code | symbol is attached | subjected and description is abbreviate | omitted.

In the inductively coupled plasma processing apparatus 1a of the second embodiment, not only the center portion of the support beam 16 forming a cross shape, but also the dielectric cover fixtures in the middle of the support beam 16 extending in all directions from the center portion. (18) was placed. Therefore, a total of five dielectric cover fixtures 18 are disposed in the inductively coupled plasma processing apparatus 1a.

As shown in FIG. 8, in the inductively coupled plasma processing apparatus 1a of the first modification, the center of the upper surface of the support beam 16 is added to the suspension 8A connected to the center portion of the support beam 16. Gas introduction passages are also provided inside the suspenders 8B, 8C, 8D, and 8E, which are connected to four intermediate positions between the portion and the four tip portions of the cross. The gas supply pipes 21 branch into five on the way (only three are shown in FIG. 8) and are connected to the gas introduction paths inside the respective suspenders 8A, 8B, 8C, 8D, and 8E. Reference numeral 145 denotes a valve for gas flow rate control provided in the middle of the gas supply pipe 21.

A gas introduction passage 21a is provided inside the center suspender 8A, and this gas introduction passage 21a is connected to the gas introduction passage 21b inside the support beam 16 and further includes a gas introduction passage ( 21b is connected to the gas introduction path 101 of the dielectric cover fixture 18. In addition, gas introduction passages branched from the gas supply pipe 21 are provided inside the suspenders 8B, 8C, 8D, and 8E (in FIG. 8, gas introduction passages 141a and 142a of the suspenders 8B and 8C). ), But otherwise omitted. These gas introduction passages are connected to the gas introduction passages formed inside the support beam 16 (in FIG. 8, only the gas introduction passages 141b and 142b are shown and omitted otherwise), and each dielectric cover fixture 18 Is connected to the gas introduction passage 101 formed in the figure. With such a configuration, the dielectric cover 12 can be reliably fixed by the four dielectric cover fasteners 18 not only at the center portion of the dielectric wall 6 but also at four places around the dielectric wall 6. Through the fixture 18, it becomes possible to introduce the processing gas into the processing chamber 5. Therefore, the gas can be supplied into the process chamber 5 independently from the dielectric cover fixtures 18 arranged in five places. In addition, in this embodiment, both the suspenders 8A-8E and the support beam 16 are support members, the suspenders 8A-8E are a "first member", and the support beam 16 is a "second member". It consists of.

The structure and fixing method of each dielectric cover fixture 18 in the inductively coupled plasma processing apparatus 1a of the present embodiment are the same as those of the inductively coupled plasma processing apparatus 1 of FIG. 1.

In the present embodiment, a plurality of arc-shaped cutouts that form circular openings when they are joined are formed in a portion where the dielectric cover fasteners 18 are arranged in the dielectric cover 12. Specifically, as shown in FIG. 9, the first to fourth partial covers 12A, 12B, 12C, and 12D correspond to the dielectric cover fasteners 18 mounted to the center portion of the cruciform support beam 16. , Arc-shaped cutouts 121, 122, 123, 124 are formed. This point is the same as that of the inductively coupled plasma processing apparatus 1 of the first embodiment. In this embodiment, the cutouts 125 and 126 are provided in the 1st partial cover 12A corresponding to the four dielectric cover fixtures 18 mounted in the middle of the support beam 16 extended from the center part to all directions. Cutouts 127 and 128 are provided in the two-part cover 12B, cutouts 129 and 130 are provided in the third partial cover 12C, and cutouts 131 and 132 are respectively provided in the fourth partial cover 12D. It is formed more. The cutout portions 125 to 132 have a shape (semi-circular) that becomes circular when joined with the cutout portions of adjacent portion covers.

As described above, in the inductively coupled plasma processing apparatus 1a of the present embodiment, in addition to the positions of the suspenders 8A, the dielectric cover fixtures 18 are also mounted at the positions of the suspenders 8B to 8E, whereby the dielectric is more reliably. The cover 12 can be fixed. In addition, since the gas can be introduced into the process chamber 5 through the dielectric cover fixture 18 from the positions of the suspenders 8B to 8E in addition to the position of the suspender 8A, the process chamber 5 Uniform plasma can be stably generated by the uniform diffusion of the gas. In addition, since the five dielectric cover fixtures 18 can control the gas flow rate independently by the valve 145, the gas supplied from each dielectric cover fixture 18 according to the generation situation of the plasma in the processing chamber 5. Flow rates can also be adjusted individually. In FIG. 8, the gas supply pipe 21 is branched from the single gas supply device 20 to guide the gas into the gas introduction passages in the suspenders 8A, 8B, 8C, 8D, and 8E. The structure which connects a gas supply line individually from the supply apparatus 20 to the suspenders 8A, 8B, 8C, 8D, and 8E may be sufficient. In addition, in this embodiment, in addition to the position of the suspender 8A, the suspenders 8B and 8C connected to the middle part of the upper surface of the cross-shaped support beam 16, and the middle part of the four front-end | tip parts of the cross. 8D and 8E, the dielectric cover fixtures 18 are arranged. However, even when the shape of the support beam and the position and number of the suspenders are different, the dielectric cover fixtures 18 may be corresponding to the position of the suspenders. Can be placed.

[Third Embodiment]

Next, an inductively coupled plasma processing apparatus according to a third embodiment of the present invention will be described with reference to FIGS. 10 and 11. In addition, in the following description, the inductively coupled plasma processing apparatus of 3rd Embodiment is demonstrated centering on the difference with the inductively coupled plasma processing apparatus of 1st and 2nd embodiment, and the same structure abbreviate | omits description.

The dielectric cover fixture 18 can also be attached to a portion where there is no support member such as the support beam 16 or the support shelf 7. FIG. 10 is a bottom view showing the dielectric cover 12 and the dielectric cover fixture 18 in the inductively coupled plasma processing apparatus of the third embodiment. 11 is sectional drawing which shows the cross section of the position of the 11-11 line in FIG.

As shown in FIG. 10, in the inductively coupled plasma processing apparatus of the third embodiment, in addition to the center of the dielectric cover 12, the centers of the first to fourth partial covers 12A, 12B, 12C, and 12D, respectively. The dielectric cover fastener 18 is also arranged in the part. Each central portion of the first to fourth partial covers 12A, 12B, 12C, 12D does not have a support beam 16 that is a support member. Therefore, the dielectric cover fastener 18 is fixed to the suspender 110 as a support member as shown in FIG. In addition, although the dielectric cover fixture 18 which typically fixes the 1st partial cover 12A is shown in FIG. 11, the dielectric cover fixture 18 which fixes the 2nd-4th partial covers 12B-12D. The same is true for.

The suspender 110 is a support member for supporting the dielectric wall 6 and constitutes a “first member”. The suspender 110 is disposed independently of other support members such as the suspenders 8A to 8E, the support beam 16 and the support shelf 7. The gas introduction passage 151 connected to the gas supply pipe 21 is formed inside the suspender 110. Moreover, the lower end part of the suspender 110 has the cylindrical expansion part 110a extended in diameter. This expanded portion 110a is a portion that engages with the first partial wall 6A and supports it.

Moreover, the recessed part 110b is formed in the lower end part of the expanded part 110a, and the screw groove 110c is formed in the inner periphery of the said recessed part 110b. The dielectric cover fixture 18 can be fixed to the suspender 110 by screwing the thread 18b2 of the convex part 18b1 of the dielectric cover fixture 18 to this screw groove 110c.

The suspender 110 is supported on the upper wall portion 2a of the main body container 2 with mechanical voids. More specifically, the pressing plate 111 is provided on the upper portion of the suspender 110, the suspender 110 is connected between the pressing plate 111 and the upper wall portion 2a through the buffer member 112. have. The shock absorbing member 112 is comprised by elastic materials, such as fluororubber and silicone rubber, and elastically deformable members, such as a spiral spring gasket, for example. By interposing the shock absorbing member 112, the suspender 110 is connected to a slightly displaceable state with respect to the upper wall portion 2a of the main body container 2, and slightly mechanically connected to the upper wall portion 2a of the main body container 2. It is supported with voids. As a result, even when the dielectric wall 6 is expanded or deformed due to heat or the like, unnecessary stress is not applied to the dielectric wall 6 or the dielectric cover 12. Breakage is prevented.

The structure of the dielectric cover fixture 18 is the same as that of the first and second embodiments. That is, the dielectric cover fastener 18 is provided with the support part 18a which supports a part of 1st partial cover 12A, and the base 18b. The gas introduction path 101 connected to the gas introduction path 151 is formed in the convex part 18b1 in the base 18b. The gas introduction passage 151 constitutes a "first gas introduction passage", and the gas introduction passage 101 constitutes a "second gas introduction passage". The gas introduction passage 101 constitutes a part of the gas flow path, and is a portion that communicates the gas introduction passage 151 with the inside of the processing chamber 5. Moreover, the gas hole 101a is formed in several places in the bottom wall of the base 18b. The gas hole 101a penetrates the bottom wall of the base 18b, forms a part of the gas introduction path 101, and opens toward the processing chamber 5 as an end portion of the gas flow path. The dielectric cover fixture 18 is attached to the expansion portion 110a such that its base 18b is adjacent to the end of the gas introduction passage 151. In addition, the dielectric cover fastener 18 may be fixed to the suspender 110 indirectly through another member.

Although not shown, the dielectric cover fasteners 18 mounted on the central portions of the second to fourth partial covers 12B, 12C, and 12D are also fixed to the suspender 110 as described above.

Moreover, in this embodiment, the notch is formed in the site | part which arrange | positions each dielectric cover fixture 18 in the dielectric cover 12. As shown in FIG. Specifically, as shown in FIG. 10, the first to fourth partial covers 12A, 12B, 12C, and 12D correspond to the dielectric cover fasteners 18 mounted to the center portion of the cross-shaped support beam 16. , Arc-shaped cutouts 121, 122, 123, 124 are formed. In addition, circular cutouts (ie, openings) 133, 134, 135, and 136 are formed at the centers of the first to fourth partial covers 12A, 12B, 12C, and 12D, respectively. The circular cutouts 133, 134, 135, and 136 are sized to which the convex part 18b1 of the dielectric cover fixture 18 can be inserted.

Thus, in the inductively coupled plasma processing apparatus of the present embodiment, in addition to the position of the center of the dielectric wall 6, the suspender ( Since the gas can be introduced into the process chamber 5 through the gas introduction passage 151 and the dielectric cover fixture 18 of the 110, the plasma is uniform by the uniform diffusion of the gas in the process chamber 5. Can be generated stably. In addition, the position and number which arrange | position the suspender 110 and the dielectric cover fixture 18 are not limited to one in the center part of the 1st-4th partial cover 12A, 12B, 12C, 12D, and are located in arbitrary positions. Can be arranged in any number.

In addition, since the five dielectric cover fixtures 18 can control the gas flow rate from the gas supply device 20 independently by a valve, similarly to the second embodiment, the five dielectric cover fixtures 18 can be used to generate plasma in the processing chamber 5. Therefore, the gas flow rate supplied from each dielectric cover fixture 18 can be adjusted individually. Moreover, also in this embodiment, the structure which connects a gas supply pipe separately from the some gas supply apparatus 20 to the suspender 8A and four suspenders 110 may be sufficient.

In each of the above first to third embodiments, the dielectric cover fastener 18 is detachably mounted. Therefore, it is possible to replace only the dielectric cover fixture 18 separately from the dielectric cover 12. In addition, some types of gas holes 101a of the dielectric cover fixture 18 having different opening diameters and opening areas (opening ratios) are prepared, and the optimum dielectric cover fixtures 18 are selected depending on the ejection pressure of the required gas. Can be installed by selecting. In this case, the supply balance of the gas into the process chamber 5 by arranging the dielectric cover fixtures 18 having different opening diameters or opening areas (opening ratios) of the gas holes 101a by the mounting portions of the dielectric cover fixtures 18. It is also possible to adjust it. That is, even if the gas flow rate from the gas supply device 20 is not controlled in the middle of the gas supply pipe 21, the ejection pressure of the gas can be individually adjusted by the conductance of the gas hole 101a of each dielectric cover fixture 18. have. In addition, by changing the arrangement number of the plasma blocking member 201, the number of through-holes 201b, the opening area, etc. together with the dielectric cover fixture 18, the gas holes 101a of each dielectric cover fixture 18 are similarly changed. The blowing pressure of the gas can be adjusted. Therefore, with a simple structure, the balance of the gas supply into the process chamber 5 can be optimized.

In the inductively coupled plasma processing apparatus of the second and third embodiments, it is also possible to use a dielectric cover fixture having no gas hole instead of the dielectric cover fixture 18. For example, FIG. 12 shows a cross-sectional structure of a dielectric cover fixture 180 that can be mounted in place of the dielectric cover fixture 18 in an inductively coupled plasma processing apparatus. The dielectric cover fixture 180 has the same configuration as the dielectric cover fixture 18 except that the gas introduction path 101 and the gas hole 101a are not provided and the plasma blocking member is not disposed. That is, the dielectric cover fixture 180 includes a support portion 180a for supporting a portion of the dielectric cover 12 (first to fourth partial covers), and a base 180b for connecting to the support portion 18a. . The support portion 180a is formed integrally in an annular shape around the base 180b. An upper portion of the base 180b of the dielectric cover fixture 180 has a convex portion 180b1 protruding in a cylindrical shape, and a thread 180b2 is formed around the convex portion 180b1. The inside of the convex part 180b1 in the base 180b becomes solid. Thus, the dielectric cover fixture 180 does not have the structure (gas introduction passage 101 and gas hole 101a) corresponded to the 2nd gas introduction passage in the dielectric cover fixture 18, and introduces a 1st gas introduction. It has a blockage structure that blocks gas flow inside the furnace and treatment chamber.

FIG. 13 is a bottom view of the dielectric cover and the dielectric cover fixture showing a state where the dielectric cover fixture 180 with the dielectric cover fixture 18 is mounted. In the example shown in FIG. 13, the dielectric cover fixture 18 which has the gas hole 101a of this invention is provided in four places of the center part of 1st-4th partial cover 12A, 12B, 12C, 12D. It is installed. On the other hand, the dielectric cover fixture 180 which does not have a gas hole is attached to the center part of the dielectric wall 6 (center part of the support beam 16). In this manner, by mounting the dielectric cover fixture 180 having no gas hole instead of the dielectric cover fixture 18 at any position, the distribution of the gas supplied into the process chamber 5 can be adjusted. In addition, the mounting position of the dielectric cover fixture 18 and the dielectric cover fixture 180 is not limited to the arrangement of FIG. 13, and various arrangements are possible.

As described above with reference to some embodiments, the dielectric cover fastener 18 is a part of the dielectric cover 12 and has a supported portion having a lower surface and a side end portion connected to the lower surface (for example, in FIG. 5). (12A1, 12B1)] a support portion (e.g., a figure for supporting the lower surface thereof between the support member (support beam 16, suspender 110) and at least one of the dielectric walls 6; Reference numeral 18a in 5 and a base which is connected to the support part, and a part of which is arranged on the side of the side end of the supported part and fixed so that the positional relationship with the support member does not change (for example, in FIG. 5). Symbol 18b) is provided.

The support of the dielectric cover fixture 18, and at least one of the support member and the dielectric wall 6, have a clamp between the support portions of the corresponding dielectric cover 12 to secure the dielectric cover 12 therebetween. Function. Therefore, according to this embodiment, it becomes possible to fix the dielectric cover 12 in the dielectric cover 12, without forming the some through hole through which the axial part of a screw is inserted. Therefore, in the case where a plurality of through holes are formed in the dielectric cover 12, breakage of the dielectric cover 12 caused by excessive stress being applied to the portion near the through holes can be prevented.

In addition, unlike the conventional method of fixing the dielectric cover 12 directly to the support member by using a plurality of screws, the dielectric cover fixture 18 is used, so that the dielectric cover 12 can be easily replaced or cleaned. It becomes possible to attach and detach, and the particle | grains resulting from a screw do not generate | occur | produce at all.

Moreover, the lower surface of the support part 18a of the dielectric cover fastener 18 becomes a taper surface which becomes smaller from the upper surface of the support part 18a as it is spaced apart from the base 18b. Therefore, it is possible to suppress the generation of particles due to the support portion 18a of the dielectric cover fastener 18.

In addition, since the dielectric cover fastener 18 can be easily installed even in a place without the support beam 16, the dielectric cover 12 can be more reliably fixed by mounting it. In addition, the gas may be supplied into the process chamber 5 through the dielectric cover fixture 18. Therefore, it is not essential to perform processing for diffusing the gas in the support beam 16, and it is not necessary to form a large number of minute gas holes in the dielectric cover 12, which greatly reduces the labor and cost of processing. Can be. In addition, since the gas can be supplied through the dielectric cover fixture 18 even from the portion without the support beam 16, the degree of freedom of the portion into which the gas is introduced into the processing chamber 5 is increased, and the uniformity within the processing chamber 5 is achieved. It is effective to form one inductively coupled plasma.

In addition, this invention is not limited to each said embodiment, A various change is possible. For example, in the present invention, the means for fixing the cover fastener is not limited to that shown in each embodiment.

1, 1a: inductively coupled plasma processing apparatus
2: body container
4: antenna chamber
5: treatment chamber
6: dielectric wall
7: support shelf
12: dielectric cover
12A1, 12B1: Supported part
13: antenna
16: support beam
18: dielectric cover fixture
18a: support
18b: Donation
21a: gas introduction furnace
21b: gas introduction furnace
101: gas introduction furnace
101a: gas hole

Claims (18)

A processing chamber having a window member constituting the ceiling portion and performing plasma processing, a gas supply device for supplying gas to the processing chamber, a high frequency antenna disposed above the window member to form an induction field in the processing chamber; A cover fixture of an inductively coupled plasma processing apparatus having a support member for supporting the window member and a cover covering a lower surface of the window member to fix the cover,
A support for supporting the cover;
And a base connected to the support portion,
The cover fixture of the inductively coupled plasma processing apparatus, characterized in that a gas introduction passage that forms part of a gas flow path for supplying gas from the gas supply device to the processing chamber is provided at the base. The cover fixture of an inductively coupled plasma processing apparatus according to claim 1, wherein the gas introduction passage has a gas orifice portion having a smaller conductance than other portions of the gas flow path. The cover fixture of an inductively coupled plasma processing apparatus according to claim 2, wherein the gas orifice portion is a gas hole facing the processing chamber. The cover fixture of the inductively coupled plasma processing apparatus according to claim 1, wherein the gas introduction passage is provided with a plasma blocking member that prevents plasma from entering the upstream side of the gas flow passage from the processing chamber. . The method of claim 4, wherein the plasma blocking member,
With the body,
The cover fixture of the inductively coupled plasma processing apparatus, characterized by having a plurality of through openings formed in the main body and allowing gas to pass therethrough. The cover fixture of an inductively coupled plasma processing apparatus according to claim 5, wherein the through opening and the gas hole are arranged at positions not overlapping linearly. The cover fixture of the inductively coupled plasma processing apparatus according to claim 5, wherein the conductance of the gas hole is smaller than that of the through opening. The cover fixture of an inductively coupled plasma processing apparatus according to any one of claims 4 to 7, wherein one or a plurality of the plasma blocking members are disposed in the gas introduction passage in a detachable manner. The cover fixture of claim 8, wherein the plasma blocking member and the cover fixture are interchangeable independently. The cover fixture of the inductively coupled plasma processing apparatus according to any one of claims 1 to 7, wherein a gas diffusion space is formed in the gas introduction passage. 8. The support member according to any one of claims 1 to 7, wherein the support member has a first member connected to an upper wall portion of a body container of the inductively coupled plasma processing apparatus, and the base is directly or indirectly connected to the first member. The cover fixture of the inductively coupled plasma processing apparatus, characterized in that fixed to the. 12. The cover fixture of the inductively coupled plasma processing apparatus according to claim 11, wherein the first member is supported with a mechanical gap at an upper wall portion of a main body container of the inductively coupled plasma processing apparatus. The said support member has the 1st member connected to the upper wall part of the main body container of the said inductive coupling plasma processing apparatus, and the 2nd member connected to the said 1st member, The cover fixture of the inductively coupled plasma processing apparatus, wherein the base is fixed directly or indirectly to the second member. The said support part supports the to-be-supported part which forms a part of the cover by directly or indirectly interposed between at least one of the said support member and the said window member. The cover fixture of the inductively coupled plasma processing apparatus, characterized in that. 15. The cover fixture of claim 14, wherein the support portion has an upper surface for supporting the lower surface of the supported portion and a lower surface with which the distance from the upper surface becomes smaller as being spaced apart from the base. . The cover fixture according to any one of claims 1 to 7 is mounted at one or a plurality of locations, characterized by the inductively coupled plasma processing apparatus. The inductively coupled plasma processing apparatus according to claim 16, wherein the cover has a cutout for mounting the cover fixture. 17. The apparatus according to claim 16, wherein the cover fixture is configured to be interchangeable with a support portion for supporting the cover, and a base connected to the support portion, wherein the base is a flow of gas inside the gas introduction passage and the processing chamber. An inductively coupled plasma processing apparatus, characterized in that a replacement cover fixture having a blockage structure for blocking a portion thereof is replaced with at least one of the cover fixtures.

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