TWI278256B - Plasma processing apparatus - Google Patents

Abstract

The present invention provides a plasma processing apparatus, which mainly improves the structure of the upper electrode plate disposed in the plasma processing apparatus. The upper electrode plate of the present invention includes a gas distribution plate; an insulation cover plate for covering up the upper portion of the gas distribution plate; and a plurality of fastening portions for fastening the gas distribution plate and the insulation cover plate. Each fastening portion includes a screw and a nut. The screw includes a head and a stud, and the head of the screw has external threads thereon. The nut is formed by insulation materials. The internal surface of each nut has internal threads thereon corresponding to the external threads of the head of the screw, thereby engaging with the head of each screw. Since the head of the screw is protected by an insulation nut to withstand the bombardment of the plasma for long duration, thereby avoiding the arc discharge phenomenon and defects of product and increasing the yield rate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus that avoids arcing. In the TFT-LCD front-array process, it is often necessary to use a plasma processing device for etching and deposition. For example, a plasma processing apparatus is used to carry out the remnant of an amorphous Si 1 con layer or a polysilicon layer in a TFT. Fig. 1 is a view showing a conventional plasma processing apparatus including a process chamber 1 having an upper electrode plate 10 and a lower electrode plate 20 therein. The gas supply system 3A and the power source 40 are connected to the upper electrode plate 10, and the power source 40 may be a radio frequency (RF). The gas supply system 3 can supply gas into the cavity 1, and the radio wave frequency is used to provide a voltage difference between the upper and lower electrode plates 10, 20. The processing chamber 1 is generally made of aluminum, and the inner surface of the chamber is usually anodized to form an anodized aluminum film to withstand plasma erosion. The lower electrode plate 20 is also usually used as a material, and the surface is anodized. A substrate (e.g., a glass substrate or a germanium substrate) S is placed on the lower electrode plate 2 to be etched or deposited using the plasma generated in the cavity 1. Figure 2 shows a bottom view of the upper electrode plate 1 , including a cross-shaped gas distributor plate 12 ′ and a cover on the gas distribution plate 12

1278256 V. INSTRUCTION DESCRIPTION (2) The bottom of the ceramic cover 14 is joined to each other with a plurality of screws 5 固定 to fix the gas distribution plate 12 and the ceramic cover 14. The gas distribution plate 12 is provided with a plurality of gas holes 16 . Fig. 3 shows the construction of a screw 50 generally used for fixing the gas distribution plate 12 and the ceramic cover 14, which includes a head portion 52 and a stem portion 54. The rod portion 54 is provided with a thread, and the head portion is not provided with a thread. When the fixing is completed, the head 52 of the screw 5〇 is exposed, as shown in Fig. 2, the head portion 5 2 is exposed to the gas distribution plate 丨2. In addition, the screw 5 is generally used as a material to resist plasma erosion. See also Figures 1 and 2, when plasma etching or deposition, at the appropriate pressure in the entire cavity 1 In the state of the gas supply system 30, the gas is supplied to the cavity 1 via the gas vent 16 of the upper electrode plate 1 , and the radio wave frequency is activated to apply between = 2:. Neutral gas molecules are separated from various charged ions, radicals, molecules, and electrons. The composition of these particles is called plasma. Some particles will accelerate due to electrical J, and then bombard the surface of the electrode plate. Or other contact with it is the ion bombardment phenomenon of the plasma. The generated electric gathering etches or deposits the substrate 3 placed on the lower electrode plate 20. However, the body material is long-lasting. Strong ion bombardment For example, 乂 = electric paddle, Tian Ma, Qufu, ί screw, the head 52 will be exposed to 锢 ^ and -,, after the long-term strong ion bombardment of 梃 1 plasma, the tip or anodized film is more Thin surface is damaged

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The surface will form a conductor after the destruction, a phenomenon known as arcing. Under the continued bombardment of the plasma, the aluminum inside the part falls onto the product (glass), causing defects and causing serious yield loss. & Inductively-coupled-plasma (ICP)

The processing device is a commonly used plasma processing device that produces high density plasma. In the ICP processing apparatus, in addition to applying a potential difference between the upper and lower electrode plates iq and 2〇, a coil (not shown) is further disposed above the upper electrode plate, which causes the cavity i to be internally charged. Charged ions in the slurry gain greater energy. In addition, the operating pressure of the chamber is usually controlled in a very low range 'about several to several tens of mT 〇 rr ·, so that the average free path of the particles grows to reduce the collision frequency between particles; The rf power applied to the lower electrode plate 2 of the substrate S is also relatively high. Under the condition of * above, 'the ion bombardment ability in the plasma becomes stronger, and the parts in the cavity, such as the above-mentioned screws 50 for fixing the gas distribution plate 12 and the ceramic cover 14, will be more serious. The phenomenon of arcing. The purpose and outline of the hair

In view of the above, an object of the present invention is to solve the above problems and to provide a plasma processing apparatus which can prevent an arc discharge phenomenon caused by ion bombardment of plasma by a screw for fixing a gas distribution plate and an insulating cover. For the TFT-LCD process, the occurrence of brighten p〇int can be avoided to avoid product defects and improve yield. For the purposes of the present invention, a plasma processing apparatus of the present invention comprises: a processing chamber;

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a lower electrode plate, located in the processing chamber, on which a substrate to be treated by plasma is placed; a gas supply system for supplying gas into the processing chamber; and an upper electrode plate located in the processing chamber Above the lower electrode plate and a power source for applying a voltage difference between the upper and lower electrode plates to convert the gas in the processing chamber into plasma. The upper electrode plate comprises: a gas distribution plate having an upper portion and a bottom portion, the bottom portion having a plurality of gas pores communicating with the gas supply system, such that gas can be supplied to the processing chamber via the gas pores An insulating cover is attached to the upper portion of the gas distribution plate; and - a plurality of fixing portions for fixing the gas distribution plate and the insulating cover, the female fixing portion including a screw and a nut The screw includes a head portion and a rod portion, and the screw head has an external thread. The nut is formed of an insulating material, and an inner surface of each nut has an external thread corresponding to the screw head. Internal thread to interlock with each screw head. Embodiment Fig. 4 is a view showing an electropolymerization processing apparatus in accordance with a preferred embodiment of the present invention. The plasma processing apparatus includes a processing chamber 1, a gas supply system 30' and a power source 4''. Inside the processing chamber 1, there is an upper electrode plate 6A and a lower electrode plate 20. On the lower electrode plate 2, a γ substrate s for performing plasma treatment, for example, a semiconductor substrate for semiconductor processing, or a glass substrate for TFT-LCD process or a transparent plastic substrate can be placed. Gas supply system 3〇 available

1278256 V. INSTRUCTIONS (5) Gas should be supplied to the processing chamber 1. The power source 40 may be a radio frequency frequency (RF) for applying a voltage difference between the upper and lower electrode plates 6 〇 and 2 , to convert the gas in the processing chamber 1 into plasma. The invention is characterized by an improvement in the upper electrode plate in the plasma processing apparatus. Therefore, the difference between the conventional plasma processing apparatus shown in Fig. 1 and the plasma processing apparatus shown in Fig. 4 is that different upper electrode plates are used. Fig. 5 is a view showing the bottom surface of the upper electrode plate 6 of the present invention. The upper electrode plate 6A includes a gas distribution plate 12, an insulating cover plate 14, and a plurality of fixing portions 7A. The fixing portion 70 is for fixing the gas distribution plate 12 and the insulating cover plate 14. The gas distribution plate 12 has an upper portion and a bottom portion, and has a plurality of gas vents 16 at its bottom, which are in communication with the gas supply system 30, so that gas can be supplied into the processing chamber i via the gas vents 16. The insulating cover 14 is attached to the upper portion of the gas fitting plate 16. The insulating cover 14 shown in Fig. 5 is formed by four insulating cover sheets 14a which are in the shape of a cross and are located at the joint of the insulating cover 14a. The gas distribution plate 12 may be formed of a metal such as aluminum, preferably an anodized aluminum anodized film having an anodized surface. The insulating cover 14 can be formed of ceramic. "The present invention uses a special fixing portion 70 for fixing the gas distribution plate 12 and the insulating cover plate 14. Fig. 6 shows the configuration of the fixing portion 7 of the present invention, and the combination of the fixing portion 70 with the gas distribution plate 12 and the insulating cover plate 14.情户:: 'Each fixing portion 7. Included a screw 72 and a screw 22 72 including a head 721 and a stem portion 722, and the screw head 721 has an external thread 725. The screw 'cap 74 is insulated The substance is formed, for example, by a ceramic pot. The inner surface of each nut has a thread 725 with the screw head 721.

1278256 V. INSTRUCTIONS (6) Corresponding internal threads (not shown) interlock with each screw head rib. σ " ! 甶 screw 72 is generally made of metal (such as aluminum), anodized with anodized film. After the first lock, the head 721 of the screw 72 is protected by the nut 74 The head 721 is not exposed to the plasma, but the nut 74 is exposed to the plasma. The material of the nut 74 exposed to the electropolymer is an insulating material (such as ceramics), which can increase resistance. The ability of the plasma can withstand the long-time bombardment of the plasma. In this way, the head 721 of the screw 72 can be prevented from being arc-blasted by the plasma bombardment, thereby preventing the metal or aluminum from falling onto the substrate S. It can reduce the occurrence of SS short circuit (ss short). For TFT-LCD process, it can avoid the occurrence of brighten point, avoid product defects and improve yield. The electropolymer processing device of the present invention covers various forms of electricity. Loading device

For example, an inductively coupled plasma (ICP) processing device. The plasma processing apparatus of the present invention can use plasma to deposit or etch, such as plasma-enhanced chemical vapor deposition (PECVD), high-density plasma chemical vapor deposition (HDPCVD; high Density CVD), sputtering, dry etching, etc., and can be used in general semiconductor processes or TFT-LCD front-end array processes. The present invention has been described in terms of a preferred embodiment, and is not intended to limit the invention, and the present invention may be modified and retouched without departing from the spirit and scope of the invention. Scope of protection

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0632-7931TWF(n); AU91017A; Cathy Wan.ptd Page 11 1278256 Schematic description of the drawing Figure 1 shows a schematic diagram of a conventional plasma processing apparatus. Figure 2 shows a bottom view of a conventional upper electrode plate. Figure 3 shows the construction of a conventional screw for fixing a gas distribution plate and a ceramic cover. Fig. 4 is a view showing a plasma processing apparatus in accordance with a preferred embodiment of the present invention. Fig. 5 is a view showing the bottom surface of the upper electrode plate of the present invention. Fig. 6 shows the construction of the fixing portion of the present invention, and the combination of the fixing portion with the gas distribution plate and the insulating cover. Description of the label 1~ processing chamber, 1 0~ upper electrode plate '1 2~ gas distribution plate, 1 4~ insulating cover, 1 4 a~insulating cover, 1 6~ gas vent, 2 0~ lower electrode plate , 30 ~ gas supply system, 40 ~ power supply, S ~ substrate 5 0 ~ screw, 5 2 ~ head, 54 ~ rod, 6 0 ~ upper electrode plate,

0632-7931TW(n); AU91017A; Cathy Wan.ptd Page 12 1278256 Schematic description 7 0~ fixed part, 72~ screw, 721~ head, 722~ rod, 7 2 5~ external thread, 74~ Nuts.

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Claims (1)

1278256 VI. Patent application scope I A plasma processing apparatus comprising: a processing chamber; a lower electrode plate located in the processing chamber, and a plasma processing substrate; and a gas supply system for supplying gas Up to the upper electrode plate, located in the processing chamber, and a power source for applying a voltage difference to the upper portion to convert the gas in the processing chamber into a plasma; wherein the upper electrode plate comprises: a gas distribution plate having an upper portion and a bottom portion, = gas pores, the gas pores and the gas supply system are supplied thereto through the gas pores, and the insulating cover is attached thereto, and the gas is sealed in the plurality of fixed portions Fixing the gas distribution fixing portion including - a screw and a nut, the screw having an external thread on the screw head, the screw m 'the inner surface of each nut having an internal thread corresponding to the screw Interlocking with each screw head #丄如/Please refer to the electro-polymerization described in the first item of the patent range. The nut is formed of ceramic. For example, please refer to the electro-polymerization described in item 1 of the patent scope. The four-plate is made up of four insulating cover plates, which are in the shape of a cross and located at the joint of the insulating cover. It can be placed in the processing chamber; above the electrode plate; between the electrode plates, the bottom of the electrode plate is connected internally, the inside; the upper part; the plate and the insulation include a master cap which is externally connected by the head. The processing device has a plurality of gas and a cover plate, a portion and a material of a thread, wherein the processing device, gas distribution; 0 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 form. 5. The plasma processing apparatus of claim 4, wherein the gas distribution plate is formed by a gas distribution plate. 6. The plasma processing apparatus according to claim 5, wherein the surface of the gas distribution plate is anodized. 8. The plasma processing apparatus of claim 1, wherein the insulating cover is formed of ceramic. 8. The plasma processing apparatus of claim 1, wherein the screw is formed of metal. 9. The plasma processing apparatus of claim 8, wherein the screw is formed by a coating. 10. The plasma processing apparatus of claim 9, wherein the surface of the screw is anodized. 11. The plasma processing apparatus of claim 1, wherein the power source is a radio frequency (RF). 12. The plasma processing apparatus of claim 1, wherein the plasma processing apparatus is an inductively coupled plasma (ICP) processing apparatus. 0632-7931TWF(n); AU91017A; Cathy Wan.ptd Page 15