JP2008518429A5 - - Google Patents

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Publication number
JP2008518429A5
JP2008518429A5 JP2007533643A JP2007533643A JP2008518429A5 JP 2008518429 A5 JP2008518429 A5 JP 2008518429A5 JP 2007533643 A JP2007533643 A JP 2007533643A JP 2007533643 A JP2007533643 A JP 2007533643A JP 2008518429 A5 JP2008518429 A5 JP 2008518429A5
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JP
Japan
Prior art keywords
plasma processing
processing system
designed
electrode
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007533643A
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English (en)
Japanese (ja)
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JP4913740B2 (ja
JP2008518429A (ja
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Publication date
Priority claimed from US10/953,229 external-priority patent/US7393432B2/en
Application filed filed Critical
Publication of JP2008518429A publication Critical patent/JP2008518429A/ja
Publication of JP2008518429A5 publication Critical patent/JP2008518429A5/ja
Application granted granted Critical
Publication of JP4913740B2 publication Critical patent/JP4913740B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007533643A 2004-09-29 2005-09-23 プラズマ加工システム Expired - Fee Related JP4913740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/953,229 US7393432B2 (en) 2004-09-29 2004-09-29 RF ground switch for plasma processing system
US10/953,229 2004-09-29
PCT/US2005/034073 WO2006039193A2 (en) 2004-09-29 2005-09-23 Rf ground switch for plasma processing system

Publications (3)

Publication Number Publication Date
JP2008518429A JP2008518429A (ja) 2008-05-29
JP2008518429A5 true JP2008518429A5 (https=) 2008-11-13
JP4913740B2 JP4913740B2 (ja) 2012-04-11

Family

ID=36097676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007533643A Expired - Fee Related JP4913740B2 (ja) 2004-09-29 2005-09-23 プラズマ加工システム

Country Status (9)

Country Link
US (1) US7393432B2 (https=)
EP (1) EP1797220A4 (https=)
JP (1) JP4913740B2 (https=)
KR (1) KR101177335B1 (https=)
CN (1) CN101316949B (https=)
IL (1) IL182200A (https=)
MY (1) MY167764A (https=)
TW (1) TWI367606B (https=)
WO (1) WO2006039193A2 (https=)

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KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5759718B2 (ja) * 2010-12-27 2015-08-05 東京エレクトロン株式会社 プラズマ処理装置
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US8847495B2 (en) * 2011-11-29 2014-09-30 Lam Research Corporation Movable grounding arrangements in a plasma processing chamber and methods therefor
US9386677B1 (en) 2013-11-18 2016-07-05 Georges J. Gorin Plasma concentration apparatus and method
US8841574B1 (en) * 2013-11-18 2014-09-23 Georges J. Gorin Plasma extension and concentration apparatus and method
JP6511992B2 (ja) * 2015-06-30 2019-05-15 オムロン株式会社 電力変換装置
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10588212B1 (en) 2019-05-22 2020-03-10 Georges J. Gorin Plasma initiation in an inductive RF coupling mode
CN112838040B (zh) * 2019-11-25 2023-10-20 中微半导体设备(上海)股份有限公司 一种晶圆夹持装置和等离子体处理设备
KR102949377B1 (ko) 2020-11-04 2026-04-08 세메스 주식회사 기판 처리 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置
JP3122228B2 (ja) * 1992-05-13 2001-01-09 忠弘 大見 プロセス装置
JP2595454B2 (ja) * 1993-09-08 1997-04-02 アネルバ株式会社 プラズマ処理装置
JPH09106898A (ja) * 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
DE69622720T2 (de) * 1996-11-04 2003-03-13 Molex Inc., Lisle Elektrische Verbinderanordnung mit Kurzschlussvorrichtung
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6202589B1 (en) * 1998-05-29 2001-03-20 Advanced Micro Devices, Inc. Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP2002126675A (ja) * 2000-10-30 2002-05-08 Yamato Scient Co Ltd プラズマ洗浄装置
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor

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