JP4913740B2 - プラズマ加工システム - Google Patents

プラズマ加工システム Download PDF

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Publication number
JP4913740B2
JP4913740B2 JP2007533643A JP2007533643A JP4913740B2 JP 4913740 B2 JP4913740 B2 JP 4913740B2 JP 2007533643 A JP2007533643 A JP 2007533643A JP 2007533643 A JP2007533643 A JP 2007533643A JP 4913740 B2 JP4913740 B2 JP 4913740B2
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JP
Japan
Prior art keywords
plasma processing
processing system
insulating
conduction path
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2007533643A
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English (en)
Japanese (ja)
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JP2008518429A5 (https=
JP2008518429A (ja
Inventor
ドヒンサ，ラジェ
コザケヴィッチ，フェリックス
レンズ，エリック
マーティン，ラッセル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
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Lam Research Corp
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Publication date
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Publication of JP2008518429A5 publication Critical patent/JP2008518429A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2007533643A 2004-09-29 2005-09-23 プラズマ加工システム Expired - Fee Related JP4913740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/953,229 US7393432B2 (en) 2004-09-29 2004-09-29 RF ground switch for plasma processing system
US10/953,229 2004-09-29
PCT/US2005/034073 WO2006039193A2 (en) 2004-09-29 2005-09-23 Rf ground switch for plasma processing system

Publications (3)

Publication Number Publication Date
JP2008518429A JP2008518429A (ja) 2008-05-29
JP2008518429A5 JP2008518429A5 (https=) 2008-11-13
JP4913740B2 true JP4913740B2 (ja) 2012-04-11

Family

ID=36097676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007533643A Expired - Fee Related JP4913740B2 (ja) 2004-09-29 2005-09-23 プラズマ加工システム

Country Status (9)

Country Link
US (1) US7393432B2 (https=)
EP (1) EP1797220A4 (https=)
JP (1) JP4913740B2 (https=)
KR (1) KR101177335B1 (https=)
CN (1) CN101316949B (https=)
IL (1) IL182200A (https=)
MY (1) MY167764A (https=)
TW (1) TWI367606B (https=)
WO (1) WO2006039193A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5759718B2 (ja) * 2010-12-27 2015-08-05 東京エレクトロン株式会社 プラズマ処理装置
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US8847495B2 (en) * 2011-11-29 2014-09-30 Lam Research Corporation Movable grounding arrangements in a plasma processing chamber and methods therefor
US9386677B1 (en) 2013-11-18 2016-07-05 Georges J. Gorin Plasma concentration apparatus and method
US8841574B1 (en) * 2013-11-18 2014-09-23 Georges J. Gorin Plasma extension and concentration apparatus and method
JP6511992B2 (ja) * 2015-06-30 2019-05-15 オムロン株式会社 電力変換装置
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10588212B1 (en) 2019-05-22 2020-03-10 Georges J. Gorin Plasma initiation in an inductive RF coupling mode
CN112838040B (zh) * 2019-11-25 2023-10-20 中微半导体设备(上海)股份有限公司 一种晶圆夹持装置和等离子体处理设备
KR102949377B1 (ko) 2020-11-04 2026-04-08 세메스 주식회사 기판 처리 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置
JPH05315098A (ja) * 1992-05-13 1993-11-26 Tadahiro Omi プロセス装置
JPH0778700A (ja) * 1993-09-08 1995-03-20 Anelva Corp プラズマ処理装置
JPH09106898A (ja) * 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US6202589B1 (en) * 1998-05-29 2001-03-20 Advanced Micro Devices, Inc. Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP2002126675A (ja) * 2000-10-30 2002-05-08 Yamato Scient Co Ltd プラズマ洗浄装置
JP2002530857A (ja) * 1998-11-16 2002-09-17 アプライド マテリアルズ インコーポレイテッド 半導体ウェーハ処理システムにおいてｒｆ戻り電流経路制御を行う装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69622720T2 (de) * 1996-11-04 2003-03-13 Molex Inc., Lisle Elektrische Verbinderanordnung mit Kurzschlussvorrichtung
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置
JPH05315098A (ja) * 1992-05-13 1993-11-26 Tadahiro Omi プロセス装置
JPH0778700A (ja) * 1993-09-08 1995-03-20 Anelva Corp プラズマ処理装置
JPH09106898A (ja) * 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US6202589B1 (en) * 1998-05-29 2001-03-20 Advanced Micro Devices, Inc. Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber
JP2002530857A (ja) * 1998-11-16 2002-09-17 アプライド マテリアルズ インコーポレイテッド 半導体ウェーハ処理システムにおいてｒｆ戻り電流経路制御を行う装置
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP2002126675A (ja) * 2000-10-30 2002-05-08 Yamato Scient Co Ltd プラズマ洗浄装置

Also Published As

Publication number Publication date
KR20070057987A (ko) 2007-06-07
KR101177335B1 (ko) 2012-08-30
US7393432B2 (en) 2008-07-01
TW200629668A (en) 2006-08-16
CN101316949B (zh) 2015-10-07
IL182200A0 (en) 2007-07-24
MY167764A (en) 2018-09-24
EP1797220A2 (en) 2007-06-20
IL182200A (en) 2011-01-31
WO2006039193A3 (en) 2008-02-21
WO2006039193A2 (en) 2006-04-13
EP1797220A4 (en) 2009-07-29
TWI367606B (en) 2012-07-01
CN101316949A (zh) 2008-12-03
JP2008518429A (ja) 2008-05-29
US20060065369A1 (en) 2006-03-30

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