KR101177335B1 - 플라즈마 처리 시스템용 ｒｆ 접지 스위치 - Google Patents

플라즈마 처리 시스템용 ｒｆ 접지 스위치 Download PDF

Info

Publication number
KR101177335B1
KR101177335B1 KR1020077009498A KR20077009498A KR101177335B1 KR 101177335 B1 KR101177335 B1 KR 101177335B1 KR 1020077009498 A KR1020077009498 A KR 1020077009498A KR 20077009498 A KR20077009498 A KR 20077009498A KR 101177335 B1 KR101177335 B1 KR 101177335B1
Authority
KR
South Korea
Prior art keywords
ground
electrode
conduction path
plasma processing
switch device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020077009498A
Other languages
English (en)
Korean (ko)
Other versions
KR20070057987A (ko
Inventor
라지 딘사
펠릭스 코자케비치
에릭 렌즈
러셀 마틴
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20070057987A publication Critical patent/KR20070057987A/ko
Application granted granted Critical
Publication of KR101177335B1 publication Critical patent/KR101177335B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077009498A 2004-09-29 2005-09-23 플라즈마 처리 시스템용 ｒｆ 접지 스위치 Expired - Lifetime KR101177335B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/953,229 US7393432B2 (en) 2004-09-29 2004-09-29 RF ground switch for plasma processing system
US10/953,229 2004-09-29
PCT/US2005/034073 WO2006039193A2 (en) 2004-09-29 2005-09-23 Rf ground switch for plasma processing system

Publications (2)

Publication Number Publication Date
KR20070057987A KR20070057987A (ko) 2007-06-07
KR101177335B1 true KR101177335B1 (ko) 2012-08-30

Family

ID=36097676

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077009498A Expired - Lifetime KR101177335B1 (ko) 2004-09-29 2005-09-23 플라즈마 처리 시스템용 ｒｆ 접지 스위치

Country Status (9)

Country Link
US (1) US7393432B2 (https=)
EP (1) EP1797220A4 (https=)
JP (1) JP4913740B2 (https=)
KR (1) KR101177335B1 (https=)
CN (1) CN101316949B (https=)
IL (1) IL182200A (https=)
MY (1) MY167764A (https=)
TW (1) TWI367606B (https=)
WO (1) WO2006039193A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5759718B2 (ja) * 2010-12-27 2015-08-05 東京エレクトロン株式会社 プラズマ処理装置
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US8847495B2 (en) * 2011-11-29 2014-09-30 Lam Research Corporation Movable grounding arrangements in a plasma processing chamber and methods therefor
US9386677B1 (en) 2013-11-18 2016-07-05 Georges J. Gorin Plasma concentration apparatus and method
US8841574B1 (en) * 2013-11-18 2014-09-23 Georges J. Gorin Plasma extension and concentration apparatus and method
JP6511992B2 (ja) * 2015-06-30 2019-05-15 オムロン株式会社 電力変換装置
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10588212B1 (en) 2019-05-22 2020-03-10 Georges J. Gorin Plasma initiation in an inductive RF coupling mode
CN112838040B (zh) * 2019-11-25 2023-10-20 中微半导体设备(上海)股份有限公司 一种晶圆夹持装置和等离子体处理设备
KR102949377B1 (ko) 2020-11-04 2026-04-08 세메스 주식회사 기판 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897389A (en) 1996-11-04 1999-04-27 Molex Incorporated Electrical connector assembly with shorting circuit arrangement
US6202589B1 (en) 1998-05-29 2001-03-20 Advanced Micro Devices, Inc. Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber
JP2002126675A (ja) 2000-10-30 2002-05-08 Yamato Scient Co Ltd プラズマ洗浄装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置
JP3122228B2 (ja) * 1992-05-13 2001-01-09 忠弘 大見 プロセス装置
JP2595454B2 (ja) * 1993-09-08 1997-04-02 アネルバ株式会社 プラズマ処理装置
JPH09106898A (ja) * 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897389A (en) 1996-11-04 1999-04-27 Molex Incorporated Electrical connector assembly with shorting circuit arrangement
US6202589B1 (en) 1998-05-29 2001-03-20 Advanced Micro Devices, Inc. Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber
JP2002126675A (ja) 2000-10-30 2002-05-08 Yamato Scient Co Ltd プラズマ洗浄装置

Also Published As

Publication number Publication date
KR20070057987A (ko) 2007-06-07
US7393432B2 (en) 2008-07-01
TW200629668A (en) 2006-08-16
CN101316949B (zh) 2015-10-07
IL182200A0 (en) 2007-07-24
MY167764A (en) 2018-09-24
EP1797220A2 (en) 2007-06-20
IL182200A (en) 2011-01-31
WO2006039193A3 (en) 2008-02-21
WO2006039193A2 (en) 2006-04-13
EP1797220A4 (en) 2009-07-29
JP4913740B2 (ja) 2012-04-11
TWI367606B (en) 2012-07-01
CN101316949A (zh) 2008-12-03
JP2008518429A (ja) 2008-05-29
US20060065369A1 (en) 2006-03-30

Similar Documents

Publication Publication Date Title
KR101177335B1 (ko) 플라즈마 처리 시스템용 ｒｆ 접지 스위치
KR102749806B1 (ko) 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
JP7489454B2 (ja) 基板支持体のための一体化された電極及び接地面
KR20240017919A (ko) 펄스식 dc 플라즈마 챔버에서의 플라즈마 균일성 제어
JP6391261B2 (ja) Ｄｃパルスエッチング装置
US20100025372A1 (en) Plasma processing method and apparatus
KR101630892B1 (ko) 결합형 웨이퍼 영역 압력 제어 및 플라즈마 한정 어셈블리
JP2018190978A (ja) 対称的な給電構造を有する補助電極を用いてプラズマ処理チャンバ内のウェハエッジシースを変調する方法および受動的な方法で動作するとき制御可能なインピーダンスを接地し、能動的に電力を供給するときプラズマへの対称ｒｆ電力入力を可能とするドライブ
CN117425945A (zh) 等离子体腔室和腔室部件清洁方法
CN101557885A (zh) 具有多个电容性和电感性电源的等离子处理反应器
TWI892843B (zh) 具有離子能量控制的電漿激發
CN1503856A (zh) 可变效率的法拉第屏蔽
CN102912313A (zh) 用以控制等离子电位的设备及方法
TW202335547A (zh) 配置成用於可調節基板和邊緣鞘控制的電漿處理腔室
KR102039758B1 (ko) 플라즈마 프로세싱 챔버 내에서의 이동가능한 접지 장치 및 이에 대한 방법들
KR100568119B1 (ko) 플라즈마 코일
KR100780366B1 (ko) 반도체 제조 장치
KR102957126B1 (ko) 플라즈마 챔버 및 챔버 컴포넌트 세정 방법들
WO2025164456A1 (ja) プラズマ処理装置
TW202520333A (zh) 電漿處理裝置
KR20260056330A (ko) 플라즈마 챔버 및 챔버 컴포넌트 세정 방법들
CN114023683A (zh) 静电吸盘装置、干蚀刻设备及干蚀刻方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070426

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20100920

Comment text: Request for Examination of Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20120525

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20120821

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20120821

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20150805

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20150805

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20160809

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20160809

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20170810

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20170810

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20180808

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20180808

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20190808

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20190808

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20200812

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20210811

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20220805

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20230808

Start annual number: 12

End annual number: 12