JP2010518605A5 - - Google Patents

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Publication number
JP2010518605A5
JP2010518605A5 JP2009548493A JP2009548493A JP2010518605A5 JP 2010518605 A5 JP2010518605 A5 JP 2010518605A5 JP 2009548493 A JP2009548493 A JP 2009548493A JP 2009548493 A JP2009548493 A JP 2009548493A JP 2010518605 A5 JP2010518605 A5 JP 2010518605A5
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JP
Japan
Prior art keywords
gas
etching
carbon
processing chamber
computer readable
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JP2009548493A
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English (en)
Japanese (ja)
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JP2010518605A (ja
JP5503976B2 (ja
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Priority claimed from US11/671,342 external-priority patent/US7547636B2/en
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Publication of JP2010518605A publication Critical patent/JP2010518605A/ja
Publication of JP2010518605A5 publication Critical patent/JP2010518605A5/ja
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Publication of JP5503976B2 publication Critical patent/JP5503976B2/ja
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JP2009548493A 2007-02-05 2008-02-04 超高アスペクト比の誘電体パルスエッチング Active JP5503976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/671,342 2007-02-05
US11/671,342 US7547636B2 (en) 2007-02-05 2007-02-05 Pulsed ultra-high aspect ratio dielectric etch
PCT/US2008/052950 WO2008097925A1 (en) 2007-02-05 2008-02-04 Pulsed ultra-high aspect ratio dielectric etch

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013145614A Division JP2013239729A (ja) 2007-02-05 2013-07-11 超高アスペクト比の誘電体パルスエッチング

Publications (3)

Publication Number Publication Date
JP2010518605A JP2010518605A (ja) 2010-05-27
JP2010518605A5 true JP2010518605A5 (enExample) 2011-03-24
JP5503976B2 JP5503976B2 (ja) 2014-05-28

Family

ID=39676541

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009548493A Active JP5503976B2 (ja) 2007-02-05 2008-02-04 超高アスペクト比の誘電体パルスエッチング
JP2013145614A Withdrawn JP2013239729A (ja) 2007-02-05 2013-07-11 超高アスペクト比の誘電体パルスエッチング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013145614A Withdrawn JP2013239729A (ja) 2007-02-05 2013-07-11 超高アスペクト比の誘電体パルスエッチング

Country Status (6)

Country Link
US (1) US7547636B2 (enExample)
JP (2) JP5503976B2 (enExample)
KR (1) KR101455883B1 (enExample)
CN (1) CN101606232B (enExample)
TW (1) TWI440083B (enExample)
WO (1) WO2008097925A1 (enExample)

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US9059116B2 (en) * 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
WO2010033924A2 (en) * 2008-09-22 2010-03-25 Applied Materials, Inc. Etch reactor suitable for etching high aspect ratio features
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US20130344702A1 (en) * 2011-03-04 2013-12-26 Tokyo Electron Limited Method of etching silicon nitride films
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
JP5802454B2 (ja) * 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9224618B2 (en) * 2012-01-17 2015-12-29 Lam Research Corporation Method to increase mask selectivity in ultra-high aspect ratio etches
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
KR102099408B1 (ko) 2012-09-18 2020-04-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US9159561B2 (en) * 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US10599039B2 (en) * 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10134600B2 (en) 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
JP6840041B2 (ja) * 2017-06-21 2021-03-10 東京エレクトロン株式会社 エッチング方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11037784B2 (en) * 2018-02-05 2021-06-15 Lam Research Corporation Amorphous carbon layer opening process
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
JP2022550057A (ja) * 2019-10-01 2022-11-30 ラム リサーチ コーポレーション 高アスペクト比フィーチャの製造中に劣化を防止するためのマスク封入
CN113035706A (zh) * 2019-12-25 2021-06-25 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法和刻蚀装置
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12266534B2 (en) 2020-06-15 2025-04-01 Tokyo Electron Limited Forming a semiconductor device using a protective layer
JP7650349B2 (ja) * 2021-04-14 2025-03-24 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11495470B1 (en) * 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
WO2025177876A1 (ja) * 2024-02-22 2025-08-28 東京エレクトロン株式会社 基板処理方法及び基板処理システム

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KR100327346B1 (ko) 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
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US7344975B2 (en) 2005-08-26 2008-03-18 Micron Technology, Inc. Method to reduce charge buildup during high aspect ratio contact etch
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US7531102B2 (en) 2006-03-31 2009-05-12 Intel Corporation Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning

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