KR101455883B1 - 펄스화된 초고 애스펙트비 유전체 식각 - Google Patents

펄스화된 초고 애스펙트비 유전체 식각 Download PDF

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KR101455883B1
KR101455883B1 KR1020097018057A KR20097018057A KR101455883B1 KR 101455883 B1 KR101455883 B1 KR 101455883B1 KR 1020097018057 A KR1020097018057 A KR 1020097018057A KR 20097018057 A KR20097018057 A KR 20097018057A KR 101455883 B1 KR101455883 B1 KR 101455883B1
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etch
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carbon
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KR20090125076A (ko
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경-구 지
에릭 에이 에델버그
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
KR1020097018057A 2007-02-05 2008-02-04 펄스화된 초고 애스펙트비 유전체 식각 Active KR101455883B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/671,342 2007-02-05
US11/671,342 US7547636B2 (en) 2007-02-05 2007-02-05 Pulsed ultra-high aspect ratio dielectric etch
PCT/US2008/052950 WO2008097925A1 (en) 2007-02-05 2008-02-04 Pulsed ultra-high aspect ratio dielectric etch

Publications (2)

Publication Number Publication Date
KR20090125076A KR20090125076A (ko) 2009-12-03
KR101455883B1 true KR101455883B1 (ko) 2014-11-03

Family

ID=39676541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018057A Active KR101455883B1 (ko) 2007-02-05 2008-02-04 펄스화된 초고 애스펙트비 유전체 식각

Country Status (6)

Country Link
US (1) US7547636B2 (enExample)
JP (2) JP5503976B2 (enExample)
KR (1) KR101455883B1 (enExample)
CN (1) CN101606232B (enExample)
TW (1) TWI440083B (enExample)
WO (1) WO2008097925A1 (enExample)

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WO2009073361A1 (en) * 2007-11-29 2009-06-11 Lam Research Corporation Pulsed bias plasma process to control microloading
US9059116B2 (en) * 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
WO2010033924A2 (en) * 2008-09-22 2010-03-25 Applied Materials, Inc. Etch reactor suitable for etching high aspect ratio features
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US20130344702A1 (en) * 2011-03-04 2013-12-26 Tokyo Electron Limited Method of etching silicon nitride films
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
JP5802454B2 (ja) * 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9224618B2 (en) * 2012-01-17 2015-12-29 Lam Research Corporation Method to increase mask selectivity in ultra-high aspect ratio etches
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
KR102099408B1 (ko) 2012-09-18 2020-04-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US9159561B2 (en) * 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US10599039B2 (en) * 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10134600B2 (en) 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
JP6840041B2 (ja) * 2017-06-21 2021-03-10 東京エレクトロン株式会社 エッチング方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11037784B2 (en) * 2018-02-05 2021-06-15 Lam Research Corporation Amorphous carbon layer opening process
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
JP2022550057A (ja) * 2019-10-01 2022-11-30 ラム リサーチ コーポレーション 高アスペクト比フィーチャの製造中に劣化を防止するためのマスク封入
CN113035706A (zh) * 2019-12-25 2021-06-25 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法和刻蚀装置
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12266534B2 (en) 2020-06-15 2025-04-01 Tokyo Electron Limited Forming a semiconductor device using a protective layer
JP7650349B2 (ja) * 2021-04-14 2025-03-24 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11495470B1 (en) * 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
WO2025177876A1 (ja) * 2024-02-22 2025-08-28 東京エレクトロン株式会社 基板処理方法及び基板処理システム

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JPH11340211A (ja) * 1998-03-27 1999-12-10 Nec Corp 基板処理方法および基板処理装置
JP2000133638A (ja) * 1998-10-22 2000-05-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2006523030A (ja) * 2003-04-09 2006-10-05 ラム　リサーチ　コーポレーション ガス化学反応の周期的変調を用いたプラズマエッチング方法

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JPH11340211A (ja) * 1998-03-27 1999-12-10 Nec Corp 基板処理方法および基板処理装置
JP2000133638A (ja) * 1998-10-22 2000-05-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2006523030A (ja) * 2003-04-09 2006-10-05 ラム　リサーチ　コーポレーション ガス化学反応の周期的変調を用いたプラズマエッチング方法

Also Published As

Publication number Publication date
KR20090125076A (ko) 2009-12-03
CN101606232B (zh) 2013-01-23
JP2010518605A (ja) 2010-05-27
US20080188082A1 (en) 2008-08-07
CN101606232A (zh) 2009-12-16
JP5503976B2 (ja) 2014-05-28
WO2008097925A1 (en) 2008-08-14
TW200849377A (en) 2008-12-16
TWI440083B (zh) 2014-06-01
JP2013239729A (ja) 2013-11-28
US7547636B2 (en) 2009-06-16

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