JP2010515251A5 - - Google Patents

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Publication number
JP2010515251A5
JP2010515251A5 JP2009543493A JP2009543493A JP2010515251A5 JP 2010515251 A5 JP2010515251 A5 JP 2010515251A5 JP 2009543493 A JP2009543493 A JP 2009543493A JP 2009543493 A JP2009543493 A JP 2009543493A JP 2010515251 A5 JP2010515251 A5 JP 2010515251A5
Authority
JP
Japan
Prior art keywords
plasma
integrated circuit
applying
application
laser irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009543493A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010515251A (ja
Filing date
Publication date
Priority claimed from FR0611489A external-priority patent/FR2911003B1/fr
Application filed filed Critical
Publication of JP2010515251A publication Critical patent/JP2010515251A/ja
Publication of JP2010515251A5 publication Critical patent/JP2010515251A5/ja
Pending legal-status Critical Current

Links

JP2009543493A 2006-12-28 2007-12-12 集積回路の表面を露出する方法及び装置 Pending JP2010515251A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0611489A FR2911003B1 (fr) 2006-12-28 2006-12-28 Procede et installation de mise a nu de la surface d'un circuit integre
PCT/FR2007/002056 WO2008090281A1 (fr) 2006-12-28 2007-12-12 Procede et installation de mise a nu de la surface d'un circuit integre

Publications (2)

Publication Number Publication Date
JP2010515251A JP2010515251A (ja) 2010-05-06
JP2010515251A5 true JP2010515251A5 (enExample) 2011-01-27

Family

ID=38222717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009543493A Pending JP2010515251A (ja) 2006-12-28 2007-12-12 集積回路の表面を露出する方法及び装置

Country Status (10)

Country Link
US (1) US8555728B2 (enExample)
EP (1) EP2095410B1 (enExample)
JP (1) JP2010515251A (enExample)
KR (1) KR101348971B1 (enExample)
CN (1) CN101611482B (enExample)
ES (1) ES2405745T3 (enExample)
FR (1) FR2911003B1 (enExample)
MY (1) MY156014A (enExample)
RU (1) RU2450386C2 (enExample)
WO (1) WO2008090281A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US8796151B2 (en) * 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2572290C1 (ru) * 2014-12-01 2016-01-10 Открытое акционерное общество "Объединенная ракетно-космическая корпорация" (ОАО "ОРКК") Способ декорпусирования интегральных микросхем
KR102065012B1 (ko) * 2016-07-26 2020-01-10 에이피시스템 주식회사 레이저 처리장치 및 레이저 처리방법
US20210333711A1 (en) * 2018-08-14 2021-10-28 The Board Of Trustees Of The University Of Illinois Photoresist-free photolithography, photoprocessing tools, and methods with vuv or deep-uv lamps
CN111495880A (zh) * 2020-04-01 2020-08-07 武汉大学 Movcd中的激光等离子复合清洗装置
GB2612360B (en) * 2021-11-01 2025-04-30 Aquasium Tech Limited Laser welding apparatus
CN116013817B (zh) * 2023-01-17 2024-03-19 上海季丰电子股份有限公司 芯片封装破除装置及方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus
US4611919A (en) * 1984-03-09 1986-09-16 Tegal Corporation Process monitor and method thereof
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
JPH01179153A (ja) * 1988-01-08 1989-07-17 Seiko Instr & Electron Ltd フォーカスイオンビーム加工装置
JP2854963B2 (ja) * 1990-11-28 1999-02-10 株式会社日立製作所 固相接合方法および装置
JP4513973B2 (ja) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 半導体装置の製造方法
US6071009A (en) * 1997-10-03 2000-06-06 Micron Technology, Inc. Semiconductor wirebond machine leadframe thermal map system
JP2001049014A (ja) 1999-08-10 2001-02-20 Sharp Corp 有機高分子膜の加工方法およびそれを用いて加工された構造体
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
US6699780B1 (en) * 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
ATE488614T1 (de) * 2002-08-28 2010-12-15 Moxtronics Inc Hybridstrahl-beschichtungssystem und verfahren zur herstellung von zno-schichten
US20040150096A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
RU2272335C2 (ru) * 2003-11-14 2006-03-20 Юрий Дмитриевич Сасов Способ испытаний и контроля электронных компонентов
US20050221586A1 (en) * 2003-12-18 2005-10-06 Mulligan Rose A Methods and apparatus for laser dicing
US20060257074A1 (en) * 2004-09-21 2006-11-16 The Furukawa Electric Co., Ltd. Semiconductor device, display device and device fabricating method

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