KR101348971B1 - 집적회로의 표면을 노광하기 위한 방법 및 장치 - Google Patents

집적회로의 표면을 노광하기 위한 방법 및 장치 Download PDF

Info

Publication number
KR101348971B1
KR101348971B1 KR1020097015599A KR20097015599A KR101348971B1 KR 101348971 B1 KR101348971 B1 KR 101348971B1 KR 1020097015599 A KR1020097015599 A KR 1020097015599A KR 20097015599 A KR20097015599 A KR 20097015599A KR 101348971 B1 KR101348971 B1 KR 101348971B1
Authority
KR
South Korea
Prior art keywords
integrated circuit
plasma
applying
laser radiation
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097015599A
Other languages
English (en)
Korean (ko)
Other versions
KR20090106549A (ko
Inventor
로맹 데플라츠
미카엘 오벵
Original Assignee
쌍트르 나쇼날 데튜드 스파씨알르
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쌍트르 나쇼날 데튜드 스파씨알르 filed Critical 쌍트르 나쇼날 데튜드 스파씨알르
Publication of KR20090106549A publication Critical patent/KR20090106549A/ko
Application granted granted Critical
Publication of KR101348971B1 publication Critical patent/KR101348971B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/346—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding
    • B23K26/348—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding in combination with arc heating, e.g. TIG [tungsten inert gas], MIG [metal inert gas] or plasma welding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020097015599A 2006-12-28 2007-12-12 집적회로의 표면을 노광하기 위한 방법 및 장치 Expired - Fee Related KR101348971B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0611489 2006-12-28
FR0611489A FR2911003B1 (fr) 2006-12-28 2006-12-28 Procede et installation de mise a nu de la surface d'un circuit integre
PCT/FR2007/002056 WO2008090281A1 (fr) 2006-12-28 2007-12-12 Procede et installation de mise a nu de la surface d'un circuit integre

Publications (2)

Publication Number Publication Date
KR20090106549A KR20090106549A (ko) 2009-10-09
KR101348971B1 true KR101348971B1 (ko) 2014-01-10

Family

ID=38222717

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097015599A Expired - Fee Related KR101348971B1 (ko) 2006-12-28 2007-12-12 집적회로의 표면을 노광하기 위한 방법 및 장치

Country Status (10)

Country Link
US (1) US8555728B2 (enExample)
EP (1) EP2095410B1 (enExample)
JP (1) JP2010515251A (enExample)
KR (1) KR101348971B1 (enExample)
CN (1) CN101611482B (enExample)
ES (1) ES2405745T3 (enExample)
FR (1) FR2911003B1 (enExample)
MY (1) MY156014A (enExample)
RU (1) RU2450386C2 (enExample)
WO (1) WO2008090281A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US8796151B2 (en) * 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2572290C1 (ru) * 2014-12-01 2016-01-10 Открытое акционерное общество "Объединенная ракетно-космическая корпорация" (ОАО "ОРКК") Способ декорпусирования интегральных микросхем
KR102065012B1 (ko) * 2016-07-26 2020-01-10 에이피시스템 주식회사 레이저 처리장치 및 레이저 처리방법
US20210333711A1 (en) * 2018-08-14 2021-10-28 The Board Of Trustees Of The University Of Illinois Photoresist-free photolithography, photoprocessing tools, and methods with vuv or deep-uv lamps
CN111495880A (zh) * 2020-04-01 2020-08-07 武汉大学 Movcd中的激光等离子复合清洗装置
GB2612360B (en) * 2021-11-01 2025-04-30 Aquasium Tech Limited Laser welding apparatus
CN116013817B (zh) * 2023-01-17 2024-03-19 上海季丰电子股份有限公司 芯片封装破除装置及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196333A (ja) * 1990-11-28 1992-07-16 Hitachi Ltd 固相接合方法および装置
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus
US4611919A (en) * 1984-03-09 1986-09-16 Tegal Corporation Process monitor and method thereof
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
JPH01179153A (ja) * 1988-01-08 1989-07-17 Seiko Instr & Electron Ltd フォーカスイオンビーム加工装置
JP4513973B2 (ja) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 半導体装置の製造方法
US6071009A (en) * 1997-10-03 2000-06-06 Micron Technology, Inc. Semiconductor wirebond machine leadframe thermal map system
JP2001049014A (ja) 1999-08-10 2001-02-20 Sharp Corp 有機高分子膜の加工方法およびそれを用いて加工された構造体
US6699780B1 (en) * 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
ATE488614T1 (de) * 2002-08-28 2010-12-15 Moxtronics Inc Hybridstrahl-beschichtungssystem und verfahren zur herstellung von zno-schichten
US20040150096A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
RU2272335C2 (ru) * 2003-11-14 2006-03-20 Юрий Дмитриевич Сасов Способ испытаний и контроля электронных компонентов
US20050221586A1 (en) * 2003-12-18 2005-10-06 Mulligan Rose A Methods and apparatus for laser dicing
US20060257074A1 (en) * 2004-09-21 2006-11-16 The Furukawa Electric Co., Ltd. Semiconductor device, display device and device fabricating method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196333A (ja) * 1990-11-28 1992-07-16 Hitachi Ltd 固相接合方法および装置
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2911003B1 (fr) 2009-10-02
WO2008090281A1 (fr) 2008-07-31
CN101611482B (zh) 2012-07-25
JP2010515251A (ja) 2010-05-06
MY156014A (en) 2015-12-31
US20100154558A1 (en) 2010-06-24
CN101611482A (zh) 2009-12-23
FR2911003A1 (fr) 2008-07-04
KR20090106549A (ko) 2009-10-09
EP2095410B1 (fr) 2013-04-10
ES2405745T3 (es) 2013-06-03
US8555728B2 (en) 2013-10-15
RU2009128992A (ru) 2011-02-10
RU2450386C2 (ru) 2012-05-10
EP2095410A1 (fr) 2009-09-02

Similar Documents

Publication Publication Date Title
KR101348971B1 (ko) 집적회로의 표면을 노광하기 위한 방법 및 장치
US20130180843A1 (en) Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof
CN100589239C (zh) 分割半导体晶片的方法和半导体器件的制造方法
US7678670B2 (en) TEG removing method in manufacturing method for semiconductor chips
US7923351B2 (en) Manufacturing method of semiconductor devices
US9379015B2 (en) Wafer processing method
KR20040086725A (ko) 반도체 웨이퍼의 분할 방법
US8703247B2 (en) Cross section processing method and method of manufacturing cross section observation sample
JP2008053417A (ja) 半導体チップの製造方法及び半導体ウエハの処理方法
EP3129833B1 (en) Apparatus for cleaning an object
KR100608469B1 (ko) 웨이퍼 상에 보호 레지스트 적용 방법
US6855622B2 (en) Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam
JP2004179165A (ja) ターゲット修復用のイオンビーム
TWI794502B (zh) 用於表面平坦化之方法
JP5294816B2 (ja) 顕微鏡付吸引型局所マイクロプラズマエッチング装置及び局所マイクロプラズマエッチング方法
US8133760B2 (en) System and method for backside circuit editing on full thickness silicon device
JP4354657B2 (ja) 集束イオンビーム装置
JP2024508743A (ja) 均一なイオン切削に適するシステム及び方法
JP2006128386A (ja) プラズマ洗浄装置及び方法
US10691090B2 (en) Method of processing device wafer
JP2829232B2 (ja) Ｉｃ素子の加工装置
JP3353672B2 (ja) 半導体装置の欠陥検査修復方法およびその装置
JP2024118968A (ja) 保護膜形成方法及び加工方法
JP2006339051A (ja) 荷電粒子応用装置
JPH03215940A (ja) ドライエッチング方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20161226

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20181226

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20191226

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220103

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220103